SEMICONDUCTOR TOSHIBA TECHNICAL DATA ose) PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY ‘The TOSHIBA TLP504A and TLP504A-2 consists of, 1 photo-transistor optically coupled to a gallium arsenide infrared emitting diode. ‘The TLPSO4A offers two isolated channels in a eight, lead plastic DIP package, while dhe TLPS04A-2 providee four isolated channels in a eixtoon plastic DIP package. © Collector-Emitter Voltage : 55V (Min.) © Current Transfer Ratio: 60% (Min.) Rank GB; 100% (Min) © Isolation Voltage +: 2500Vims (Min) © UL Remgnisnd masz, File No, 267349 PIN CONFIGURATIONS (TOP VIEW) TLP504A ths, tnt, otf, df, 1,458 — : ANODE 2.3.6.7 : CATHODE 9, 19, 18,16: EMITTER 10, 11, 14, 15 : COLLECTOR TOSHIBA PHOTOCOUPLER TLP504A, TLP504A-2 GaAs IRED & PHOTO-TRANSISTOR Unit in mm ipsam Weight: 054g i PL, [sEDEG = BIAS = [TOSHIBA 11004 [ape feta = [rosmmBASEMICONDUCTOR TOSHIBA TLP504A, TLP504A-2 TECHNICAL DATA rsa) MAXIMUM RATINGS (Ta = 2540) RATING cuaracrmnisnc ‘| svatmow usr TON unvoaa Forward Caen 3 oy % Porward Current Dening | alp@ | —o7 axa) | —osma=250 5 fruse Forward Current FP 11400; pls, 100pps) [eves Vota VE 3. v [uneon Temperate a as "6 [scorer Vase | Vox 08 v Jmier-Clleior Vise | Vso 7 v Blosser Oomen e we = ec ie vo Ww B leotecor Favor Diapaion [Derating (1 Circuit Tasas) | Pe!" a “10 mW °C useton Temperate a Bs © Birage Tempertare Range | Tag =s=10 © Operang Tempertare Range | Tue =5=100 c Lead Soldering Temperstare | Tut 3601009 c Total Package Power Diipston | @t a i aw Fetal wekage rower istealon | gpoioe =25 as [mwre slaion Vola Tig | B00TAG, Inn, RAR) owe | Vem Note 1: Device considered a two terminal DETECTOR side pins shorted together. LED side pins shorted together andSEMICONDUCTOR TLP504A, TLP504A-2 TOSHIBA TECHNICAL DATA os) INDIVIDUAL ELECTRICAL CHARACTERISTIC (Ta=25°0) CHARACTRRISTIC [SYMBOL] TEST CONDITION _|MIN. | TYP. |MAX. UNIT a [Forward Woltage Vr ro [ass [aa |v 3 Iaeverse Current Tr 10 | pa [Capacitance cr — [ao Tor [colectar Emitter [Breakdown Voltage (BR) CEO| s|-|- |" 5 limiter Colectr ‘aw ecal 7|_lole & |Breakdown Voltage 2 = [io [00 [aa E E ootector Dark Current | i a ceo =| 2} a0 | pa [Capacitance Callectar ho Better Coe ~| ®)- | COUPLED ELECTRICAL CHARACTERISTICS (Ta=25°C) cuaracrenismic —[syMBot] TEST CONDITION _[ MIN. | TvP. [MAX] unr ink, Vop= so | — | 00 current Transfer Ratio [ig/tp__ [IF =8™4, VoR=5V % cnr Rank OB 00 | — | 600 Saturated CTR 1p (gay FE: VoR=04V ae Seturated Cr fo“ eat Rank OB fl Tg=aamA, Tp=AmA — |= [oe Collector-Bmitter Saturation Voltage Wow eat) |1g=0.2mA, Ip=ima = |02|—| v Rank OB — [= Tos ISOLATION CHARACTERISTICS (Ta=25°0) cuaracrensmic —[sympo.] Test conpmion _| aa. [TvP. [Max [unr [Capacitance Input to Outpt | Og |Vg~0, Paine — [eal — [er Teoletion Resistance Rg |Vs=5000 aon] ao*[ — [a [AC, 1 minute Es ee Tslntion Voltage vg [AC.1 second, in oil — [000 | — |" PG. mint — [one | — | wae TP aSEMICONDUCTOR TOSHIBA TLP504A, TLP504A-2 TECHNICAL DATA saan) SWITCHING CHARACTERISTICS (Ta =25°C] cuaracreaisnc | syvmor] Test coNpimon [wn [vax [ONT iorise z T= Toren Ta _ oa =pay=] ’ wnat ne to a rss Tine ‘ox pete rage Tine i 2g) STS] Turn-off Time torr : — | 25 = IP reve x x aayvoo cB OY corr AECOMMENDED OPERATING CONDITIONS cmaracrenasme | syammor. [am [rm [a [oT Forward Cres [= [ae a Cater Cre te = La [na Operating Tepes | [=a | — | RETTETISEMICONDUCTOR TOSHIBA TECHNICAL DATA TLP504A, TLP504A-2 ws pte iH Es : Om eet on ep — De 2 oo Ht 00 aE Ee DUTY CYCLE RAMIO. Dp avprata — tp we a FORFARD CURRENT Ip nd) ay PORWARD CURRENT yp tnd) AMBIENT TENPRRATURE. THC} Ip- ve haa Sas FORWARD VOLTAGE Vp) so ep ~ Ver PULSE FORWARD VOLTAGE. Yep «) TPSEMICONDUCTOR TOSHIBA TECHNICAL DATA TLP504A, TLP504A-2 mvs i Hy a COULECTORCURAENT te inh Tego - Te Sr 3 To FORWARD CURRENT tp Ic - Vor COUCTORENTTTER VOLTAGE Vex loste = te FORWARD CURRENT fp (nA) TPSEMICONDUCTOR TLP504A, TLP504A-2 TOSHIBA TECHNICAL DATA mvs Vee aut) ~ Te omrcnne Time ye) OAD RESISTANCE. 0) TP