PD -91535

IRL540NS/L
HEXFET® Power MOSFET
l Advanced Process Technology
D
l Surface Mount (IRL540NS)
VDSS = 100V
l Low-profile through-hole (IRL540NL)
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.044Ω
G
l Fully Avalanche Rated
Description ID = 36A
S
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
benefit, combined with the fast switching speed and
ruggedized device design that HEXFET Power MOSFETs
are well known for, provides the designer with an extremely
efficient and reliable device for use in a wide variety of
applications.
The D2Pak is a surface mount power package capable of
accommodating die sizes up to HEX-4. It provides the
highest power capability and the lowest possible on-
resistance in any existing surface mount package. The D 2 P ak T O -26 2
D2Pak is suitable for high current applications because of
its low internal connection resistance and can dissipate up
to 2.0W in a typical surface mount application.
The through-hole version (IRF540NL) is available for low-
profile applications.
Absolute Maximum Ratings
Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V… 36
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V… 26 A
IDM Pulsed Drain Current … 120
PD @TA = 25°C Power Dissipation 3.8 W
PD @TC = 25°C Power Dissipation 140 W
Linear Derating Factor 0.91 W/°C
VGS Gate-to-Source Voltage ± 16 V
EAS Single Pulse Avalanche Energy‚… 310 mJ
IAR Avalanche Current 18 A
EAR Repetitive Avalanche Energy 14 mJ
dv/dt Peak Diode Recovery dv/dt ƒ… 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.1
°C/W
RθJA Junction-to-Ambient ( PCB Mounted,steady-state)** ––– 40

5/13/98
IRL540NS/L
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V V GS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.11 ––– V/°C Reference to 25°C, ID = 1mA…
––– ––– 0.044 VGS = 10V, ID = 18A „
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.053 Ω VGS = 5.0V, ID = 18A „
––– ––– 0.063 VGS = 4.0V, ID = 15A „
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = V GS, ID = 250µA
gfs Forward Transconductance 14 ––– ––– S V DS = 25V, ID = 18A…
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 16V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
Qg Total Gate Charge ––– ––– 74 ID = 18A
Qgs Gate-to-Source Charge ––– ––– 9.4 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 38 VGS = 5.0V, See Fig. 6 and 13 „…
td(on) Turn-On Delay Time ––– 11 ––– VDD = 50V
tr Rise Time ––– 81 ––– ID = 18A
ns
td(off) Turn-Off Delay Time ––– 39 ––– RG = 5.0Ω, VGS = 5.0V
tf Fall Time ––– 62 ––– R D = 2.7Ω, See Fig. 10 „…
Between lead,
LS Internal Source Inductance ––– 7.5 ––– nH
and center of die contact
Ciss Input Capacitance ––– 1800 ––– VGS = 0V
Coss Output Capacitance ––– 350 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 170 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
D
IS Continuous Source Current MOSFET symbol
––– ––– 36
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

––– ––– 120

(Body Diode) … p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 18A, VGS = 0V „…
trr Reverse Recovery Time ––– 190 290 ns TJ = 25°C, IF = 18A
Q rr Reverse RecoveryCharge ––– 1.1 1.7 µC di/dt = 100A/µs „…
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ Starting TJ = 25°C, L = 1.9mH … Uses IRL540N data and test conditions
RG = 25Ω, IAS = 18A. (See Figure 12)
ƒ ISD ≤ 18A, di/dt ≤ 180A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended soldering techniques refer to application note #AN-994.
 IRL540NS/L

1000 VGS 1000 VGS

TOP 15V TOP 15V
12V 12V
10V 10V
8.0V 8.0V
ID , Drain-to-Source Current (A)

ID , Drain-to-Source Current (A)

6.0V 6.0V
4.0V 4.0V
3.0V 3.0V
BOTTOM 2.5V BOTTOM 2.5V
100 100

10 10
2.5V
2.5V

20µs PULSE WIDTH 20µs PULSE WIDTH

T J = 25°C T J = 175°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , Drain-to-Source Voltage (V) V D S , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 3.0
I D = 30A
R D S ( o n ) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

2.5

100 2.0
TJ = 25°C
(Normalized)

TJ = 175°C
1.5

10 1.0

0.5

V D S = 50V
20µs PULSE WIDTH V G S = 10V
1 A 0.0 A
2 4 6 8 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Gate-to-Source Voltage (V) T J , Junction Temperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
IRL540NS/L

3000 15
V G S = 0V, f = 1MHz I D = 18A
C iss = C gs+ C gd, C SHORTED
ds V D S = 80V
C rss = C gd V D S = 50V

V G S , Gate-to-Source Voltage (V)

C oss = C ds+ C gd 12 V D S = 20V
C iss
C, Capacitance (pF)

2000
9

6
1000 C oss

C rss 3

FOR TEST CIRCUIT

SEE FIGURE 13
0 A 0 A
1 10 100 0 20 40 60 80 100
V D S , Drain-to-Source Voltage (V) Q G , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
OPERATION IN THIS AREA LIMITED
BY RD S ( o n )
I S D , Reverse Drain Current (A)

I D , Drain Current (A)

100 100
10µs
TJ = 175°C

100µs
T J = 25°C
10 10

1ms

T C = 25°C
T J = 175°C 10ms
VG S = 0V Single Pulse
1 A 1 A
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 10 100 1000
V S D , Source-to-Drain Voltage (V) V D S , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
 IRL540NS/L
RD
40 VDS

VGS
D.U.T.
RG
30 +
-VDD
I D , Drain Current (A)

5.0V
Pulse Width ≤ 1 µs
20 Duty Factor ≤ 0.1 %

Fig 10a. Switching Time Test Circuit

10
VDS
90%

0
25 50 75 100 125 150 175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs. td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10 P DM
0.1
0.05 t1
0.02 SINGLE PULSE t2
0.01 (THERMAL RESPONSE)
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

IRL540NS/L

800
ID

E A S , Single Pulse Avalanche Energy (mJ)

TOP 7.3A
1 5V 13A
BOTTOM 18A
600

L D R IV E R
VD S

RG D .U .T 400
+
V
- DD
IA S A
10V
tp 0.0 1 Ω
200

Fig 12a. Unclamped Inductive Test Circuit

0 A
25 50 75 100 125 150 175
V (B R )D SS Starting T J , Junction Temperature (°C)
tp

Fig 12c. Maximum Avalanche Energy

Vs. Drain Current

IAS
Current Regulator
Fig 12b. Unclamped Inductive Waveforms Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

5.0 V +
V
D.U.T. - DS
QGS QGD
VGS
VG
3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
 IRL540NS/L

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations

D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive

P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS

IRL540NS/L
D2Pak Package Outline

1 0.54 (.415 ) -B- 10 .1 6 (.4 00 )

1 0.29 (.405 ) 4 .6 9 (.18 5) R E F.
1.4 0 (.055 ) 4 .2 0 (.16 5)
-A- 1.3 2 (.05 2)
M AX. 1.2 2 (.04 8)
2
6.47 (.2 55 )
6.18 (.2 43 )

1.7 8 (.07 0) 1 5.49 (.6 10) 2.7 9 (.110 )

1.2 7 (.05 0) 1 3 1 4.73 (.5 80) 2.2 9 (.090 )

5.28 (.2 08 ) 2.61 (.1 03 )

4.78 (.1 88 ) 2.32 (.0 91 )

8.8 9 (.3 50 )
1.40 (.0 55) 1.3 9 (.0 55 ) R E F.
3X
1.14 (.0 45) 0.9 3 (.0 37 ) 0.55 (.0 22) 1.1 4 (.0 45 )
3X 0.46 (.0 18)
0.6 9 (.0 27 )
5 .08 (.20 0) 0.25 (.0 10 ) M B A M M IN IM U M R EC O M M E ND E D F O O TP R IN T

1 1.43 (.4 50 )

NO TE S: LE AD AS SIG N M E N TS 8 .89 (.35 0)

1 D IM EN S IO N S A FTER SO LD E R D IP . 1 - G ATE
2 - D RA IN 17 .78 (.70 0)
2 D IM EN S IO N IN G & TO LE R AN C IN G P ER AN S I Y1 4.5M , 19 82 .
3 - SO U R C E
3 C O N TRO L LIN G D IM EN S IO N : IN C H.
4 H E ATSINK & L EA D D IM E N SIO N S DO N O T IN C LU D E B U R RS .
3.81 (.1 5 0)

2.5 4 (.100 )
2.0 8 (.08 2) 2X
2X

Part Marking Information

D2Pak

A
IN TE R N A TIO N A L PART NUM BER
R E C T IF IE R
F530S
LO G O
9 24 6
9B 1M DATE CODE
(Y YW W )
A S S E M B LY
YY = Y E A R
LO T C O D E
W W = W EEK
 IRL540NS/L
Package Outline
TO-262 Outline

Part Marking Information

TO-262
IRL540NS/L
Tape & Reel Information
D2Pak

TR R

1 .6 0 (.0 6 3 )
1 .5 0 (.0 5 9 )
1 .60 (.06 3)
4 .1 0 (.1 6 1 ) 1 .50 (.05 9)
3 .9 0 (.1 5 3 ) 0 .3 68 (.0 1 4 5 )
0 .3 42 (.0 1 3 5 )

F E E D D IRE CTIO N 1 .8 5 (.0 7 3 ) 1 1 .6 0 (.4 5 7 )

1 .6 5 (.0 6 5 ) 1 1 .4 0 (.4 4 9 ) 2 4 .3 0 (.9 5 7 )
1 5 .4 2 (.6 0 9 )
2 3 .9 0 (.9 4 1 )
1 5 .2 2 (.6 0 1 )
TR L
1 .75 (.06 9 )
10 .9 0 (.42 9) 1 .25 (.04 9 )
10 .7 0 (.42 1) 4 .7 2 (.1 3 6)
16 .10 (.63 4 ) 4 .5 2 (.1 7 8)
15 .90 (.62 6 )

F E E D D IRE C TIO N

13.50 (.532 ) 2 7.4 0 (1.079)

12.80 (.504 ) 2 3.9 0 (.9 41)

33 0.00 60.00 (2.3 62)

(1 4.1 73) MIN .
MA X.

3 0.40 (1.1 97)

NO TES : MAX.
1. C O M F O R M S TO E IA -4 18. 26 .40 (1.03 9) 4
2. C O N TR O LLIN G D IM E N S IO N : M ILL IM ET ER . 24 .40 (.961 )
3. D IM E N S IO N ME A S U R E D @ H U B .
3
4. IN C LU D E S F LA N G E D IS TO R T IO N @ O U T E R E D G E .

WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 5/98
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/