Professional Documents
Culture Documents
Nte261 PDF
Nte261 PDF
Nte261 PDF
Description:
The NTE261 (NPN) and NTE262 (PNP) are complementary silicon Darlington power transistors in
a TO220 type package designed for general purpose amplifier and low–speed switching applications.
Features:
D High DC Current Gain: hFE = 2500 Typ @ IC = 4A
D Collector–Emitter Sustaining Voltage: VCEO(sus) = 100V Min @ 100mA
D Low Collector–Emitter Saturation Voltage:
VCE(sat) = 2V Max @ IC = 3A
= 4V Max @ IC = 5A
D Monolithic Construction with Built–In Base–Emitter Shunt Resistor
NTE261
.420 (10.67)
Max
C
B .110 (2.79)
.250 (6.35)
Max
NTE262
.500
(12.7)
Max
C .070 (1.78) Max
B
Base Emitter