1.

A Quarternary alloy In1-xGaxAsyP1-y grown on InP substrate is suitable for

commercial LEDs and Lasers. The device requires InGaAsP layer is lattice matched
with InP crystal substrate to avoid crystal defects in the layer which requires y = 2.2x.
Calculate the composition of InGaAsP for a peak emission wavelength at 1.3µm.
Empirical relation for bandgap energy in eV is given by Eg = 1.35-0.72y+0.12y2 ;
0 ≤ x ≤ 0.47
[Ans: x= 0.277 and y= 0.61, In0.72Ga0.28xAs0.61P0.39]
2. . A simple empirical relation that gives the band gap energy in eV for In1-xGaxAsyP1-y
in terms of x and y, is given by Eg = 1.35+0.668x-1.17y+0.758x2+0.18y2-0.069xy-
0.322x2y+0.33xy2 eV. Find the band gap energy and the peak emission wavelength
for In0.65Ga0.35As0.52P0.48.
[Ans: 1.115 eV and 1126 nm]

3. Calculate the wavelength of photons emitted from GaAs crystal as a result of

electron-hole recombination. Is this wavelength is visible? Will a silicon
photodetector be sensitive to the radiation from a GaAs laser and why?
[Consider Eg = 1.42eV for GaAs and1.1 eV for Si].
[Ans: 873nm (invisible IR)for silicon 1120nm, can detect]