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  • 4-BAND GAP PROBLEMS-22-Jul-2020Material - I - 22-Jul-2020 - Band - Gap - PBMS

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    Aman Kumar Trivedi
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    This document contains three problems related to semiconductor materials and devices: 1. It asks to calculate the output spectral wavelength of a ternary semiconductor alloy with a given direct energy gap equation. 2. It asks to calculate the wavelength of photons emitted from a GaAs crystal and whether this wavelength is visible, as well as if a silicon photodetector would be sensitive to radiation from a GaAs laser. 3. It asks to calculate the composition of a quaternary InGaAsP alloy lattice matched to InP that has a peak emission wavelength of 1.3μm, given an equation for its bandgap energy.

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    4-BAND GAP PROBLEMS-22-Jul-2020Material_I_22-Jul-2020_Band_gap-_PBMS

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    This document contains three problems related to semiconductor materials and devices: 1. It asks to calculate the output spectral wavelength of a ternary semiconductor alloy with a given direct energy gap equation. 2. It asks to calculate the wavelength of photons emitted from a GaAs crystal and whether this wavelength is visible, as well as if a silicon photodetector would be sensitive to radiation from a GaAs laser. 3. It asks to calculate the composition of a quaternary InGaAsP alloy lattice matched to InP that has a peak emission wavelength of 1.3μm, given an equation for its bandgap energy.

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    © All Rights Reserved
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    97 views1 page

    4-BAND GAP PROBLEMS-22-Jul-2020Material - I - 22-Jul-2020 - Band - Gap - PBMS

    Uploaded by

    Aman Kumar Trivedi
    This document contains three problems related to semiconductor materials and devices: 1. It asks to calculate the output spectral wavelength of a ternary semiconductor alloy with a given direct energy gap equation. 2. It asks to calculate the wavelength of photons emitted from a GaAs crystal and whether this wavelength is visible, as well as if a silicon photodetector would be sensitive to radiation from a GaAs laser. 3. It asks to calculate the composition of a quaternary InGaAsP alloy lattice matched to InP that has a peak emission wavelength of 1.3μm, given an equation for its bandgap energy.

    Copyright:

    © All Rights Reserved
    Download as PPTX, PDF, TXT or read online from Scribd
    Flag for inappropriate content
    of 1

    PROBLEMS

    1. Direct energy gap of a ternary semiconductor (GaPx As1-x) with


    x = 0.7, is given by 1.424 + 1.50 x + 0.176 x2, Evaluate the output spectral
    wavelength of the given semiconductor.

    2. Calculate the wavelength of photons emitted from GaAs crystal as a result of


    electron-hole recombination. Is this wavelength is visible? Will a silicon
    photodetector be sensitive to the radiation from a GaAs laser and why?
    [Consider Eg = 1.42eV for GaAs and 1.1 eV for Si].

    3. A Quarternary alloy In1-xGaxAsyP1-y grown on InP substrate is suitable for


    commercial LEDs and Lasers. The device requires InGaAsP layer is lattice matched
    with InP crystal substrate to avoid crystal defects in the layer which requires y=2.2x.
    Emprical relation for bandgap energy in eV is given by Eg=1.35-0.72y+0.12y2 ; 0 ≤ x
    ≤ 0.47.Calculate the composition of InGaAsP for a peak emission wavelength at
    1.3µm.

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