MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE

BCR08AM-14 OUTLINE DRAWING Dimensions in mm

φ 5.0 MAX.
4.4

5.0 MAX.
VOLTAGE
➁ CLASS
TYPE
NAME

➂
➀

12.5 MIN.
➀ T1 TERMINAL
➁ T2 TERMINAL
➂ GATE TERMINAL

CIRCUMSCRIBE 1.25 1.25

CIRCLE
φ 0.7

1.3
3.9 MAX.
➀ ➂ ➁

● IT (RMS) ............................................................... 0.8A

● VDRM ................................................................. 700V
● IFGT !, IRGT ! , IRGT # ....................................... 5mA
JEDEC : TO-92

APPLICATION
Washing machine, electric fan, air cleaner, other general purpose control applications

MAXIMUM RATINGS
Voltage class
Symbol Parameter Unit
14
VDRM Repetitive peak off-state voltage✽1 700 V
VDSM Non-repetitive peak off-state voltage✽1 840 V

Symbol Parameter Conditions Ratings Unit

IT (RMS) RMS on-state current Commercial frequency, sine full wave 360° conduction, Tc=67°C 0.8 A
ITSM Surge on-state current 60Hz sinewave 1 full cycle, peak value, non-repetitive 8 A

I2t I2t for fusing Value corresponding to 1 cycle of half wave 60Hz, surge on-state 0.26 A 2s
current
PGM Peak gate power dissipation 1 W
PG (AV) Average gate power dissipation 0.1 W
VGM Peak gate voltage 6 V
IGM Peak gate current 0.5 A
Tj Junction temperature –40 ~ +125 °C
Tstg Storage temperature –40 ~ +125 °C
— Weight Typical value 0.23 g
✽1. Gate open.
Mar.2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE

ELECTRICAL CHARACTERISTICS
Limits
Symbol Parameter Test conditions Unit
Min. Typ. Max.
IDRM Repetitive peak off-state current Tj=125°C, VDRM applied — — 1.0 mA
VTM On-state voltage Tc=25°C, ITM=1.2A, Instantaneous measurement — — 2.0 V
VFGT ! ! — — 2.0 V
VRGT ! Gate trigger voltage ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 2.0 V
VRGT # # — — 2.0 V
IFGT ! ! — — 5 mA
IRGT ! Gate trigger current ✽2 @ Tj=25°C, VD=6V, RL=6Ω, RG=330Ω — — 5 mA
IRGT # # — — 5 mA
VGD Gate non-trigger voltage Tj=125°C, VD=1/2VDRM 0.1 — — V
Rth (j-c) Thermal resistance Junction to case ✽3 — — 50 °C/ W
Critical-rate of rise of off-state ✽4
(dv/dt)c Tj=125°C 0.5 — — V/µs
commutating voltage
✽2. Measurement using the gate trigger characteristics measurement circuit.
✽3. Case temperature is measured at the T2 terminal 1.5mm away from the molded case.
✽4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.

Commutating voltage and current waveforms

Test conditions
(inductive load)
SUPPLY
1. Junction temperature VOLTAGE TIME
Tj=125°C
2. Rate of decay of on-state commutating current (di/dt)c
MAIN TIME
(di/dt)c=–0.4A/ms CURRENT
3. Peak off-state voltage MAIN TIME
VD=400V VOLTAGE
(dv/dt)c VD

PERFORMANCE CURVES

MAXIMUM ON-STATE RATED SURGE ON-STATE

CHARACTERISTICS CURRENT
101 10
SURGE ON-STATE CURRENT (A)

7 Tc = 25°C 9
5
ON-STATE CURRENT (A)

8
3
7
2
6
100 5
7 4
5
3
3
2
2
1
10–1 0
1.0 1.5 2.0 2.5 3.0 3.5 4.0 100 2 3 5 7 101 2 3 5 7 102

ON-STATE VOLTAGE (V) CONDUCTION TIME

(CYCLES AT 60Hz)

Mar.2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

GATE CHARACTERISTICS JUNCTION TEMPERATURE

100 (%)
3 103
2 7 TYPICAL EXAMPLE
VGM = 6V 5
101
7 PGM = 1W
GATE VOLTAGE (V)

GATE TRIGGER CURRENT (Tj = 25°C)

5 3

GATE TRIGGER CURRENT (Tj = t°C)

VGT PG(AV) =
3 0.1W 2
2
IGM =
100 0.5A 102
7
5 7
IFGT I, IRGT I, IRGT III 5
3
2
3
10–1 2
7
5 VGD = 0.1V
3 101
3 5 7 101 2 3 5 7 102 2 3 5 7103 –60 –40 –20 0 20 40 60 80 100 120 140

GATE CURRENT (mA) JUNCTION TEMPERATURE (°C)

MAXIMUM TRANSIENT THERMAL

GATE TRIGGER VOLTAGE VS. IMPEDANCE CHARACTERISTICS
JUNCTION TEMPERATURE
102 2 3 5 7 103 2 3 5 7 104 2 3 5 7105
100 (%)

TRANSIENT THERMAL IMPEDANCE (°C/W)

103 3
7 TYPICAL EXAMPLE
2
5 JUNCTION TO AMBIENT
102
GATE TRIGGER VOLTAGE (Tj = 25°C)

3
GATE TRIGGER VOLTAGE (Tj = t°C)

7
2
5 JUNCTION TO CASE
102 3
7 2
5

3 101
7
2
5

101 3
–60 –40 –20 0 20 40 60 80 100 120 140 10–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102

JUNCTION TEMPERATURE (°C) CONDUCTION TIME

(CYCLES AT 60Hz)

MAXIMUM ON-STATE POWER ALLOWABLE CASE TEMPERATURE

DISSIPATION VS. RMS ON-STATE CURRENT
2.0 160
ON-STATE POWER DISSIPATION (W)

CURVES APPLY REGARDLESS

1.8 140 OF CONDUCTION ANGLE
CASE TEMPERATURE (°C)

1.6 RESISTIVE, INDUCTIVE LOADS

120
1.4
1.2 100

1.0 80
0.8 60
0.6 360° 360°
CONDUCTION 40 CONDUCTION
0.4 RESISTIVE, RESISTIVE,
0.2 INDUCTIVE 20 INDUCTIVE
LOADS LOADS
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

RMS ON-STATE CURRENT (A) RMS ON-STATE CURRENT (A)

Mar.2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE

REPETITIVE PEAK OFF-STATE

100 (%)
ALLOWABLE AMBIENT TEMPERATURE CURRENT VS. JUNCTION
VS. RMS ON-STATE CURRENT TEMPERATURE
160 105
CURVES APPLY REGARDLESS 7 TYPICAL EXAMPLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = 25°C)

5
AMBIENT TEMPERATURE (°C)

OF CONDUCTION ANGLE

REPETITIVE PEAK OFF-STATE CURRENT (Tj = t°C)

140
NATURAL CONVECTION 3
120 NO FINS 2
104
100 7
5
80 3
360° 2
60 CONDUCTION 103
RESISTIVE, 7
40 INDUCTIVE 5
LOADS 3
20 2
0 102
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 –60 –40 –20 0 20 40 60 80 100 120 140

RMS ON-STATE CURRENT (A) JUNCTION TEMPERATURE (°C)

HOLDING CURRENT VS. LACHING CURRENT VS.

JUNCTION TEMPERATURE JUNCTION TEMPERATURE
103 102
100 (%)

7 TYPICAL EXAMPLE 7 DISTRIBUTION

5
5 T2+, G–
LACHING CURRENT (mA)

3
2 TYPICAL EXAMPLE
3
HOLDING CURRENT (Tj = 25°C)

101
HOLDING CURRENT (Tj = t°C)

2
7
5
102 3
7 2
5 100
7 + +
3 5 T2 , G
2 3 TYPICAL
2 EXAMPLE T2– , G–
TYPICAL EXAMPLE
101 10–1
–60 –40 –20 0 20 40 60 80 100 120 140 –40 0 40 80 120 160

JUNCTION TEMPERATURE (°C) JUNCTION TEMPERATURE (°C)

BREAKOVER VOLTAGE VS.

BREAKOVER VOLTAGE VS. RATE OF RISE OF
JUNCTION TEMPERATURE OFF-STATE VOLTAGE
100 (%)

160 160
100 (%)

TYPICAL EXAMPLE TYPICAL EXAMPLE

140 140 Tj = 125°C
BREAKOVER VOLTAGE (dv/dt = 1V/µs )
BREAKOVER VOLTAGE (dv/dt = xV/µs )

120 120
BREAKOVER VOLTAGE (Tj = 25°C)
BREAKOVER VOLTAGE (Tj = t°C)

100 100

80 80
I QUADRANT
60 60 III QUADRANT

40 40

20 20

0 0
–60 –40 –20 0 20 40 60 80 100120 140 100 2 3 5 7 101 2 3 5 7 102 2 3 5 7 103

JUNCTION TEMPERATURE (°C) RATE OF RISE OF OFF-STATE VOLTAGE (V/µs)

Mar.2002
 MITSUBISHI SEMICONDUCTOR 〈TRIAC〉

BCR08AM-14
LOW POWER USE
PLANAR PASSIVATION TYPE

GATE TRIGGER CURRENT VS.

COMMUTATION CHARACTERISTICS GATE CURRENT PULSE WIDTH
CRITICAL RATE OF RISE OF OFF-STATE

101 103

100 (%)
7 TYPICAL EXAMPLE CONDITIONS TYPICAL EXAMPLE
COMMUTATING VOLTAGE (V/µs)

7
5 VD = 200V 5
IT = 1A IIRGT
RGT III
III
3 τ = 500µs 3

GATE TRIGGER CURRENT (DC)

GATE TRIGGER CURRENT (tw)
Tj = 125°C
2 2
III QUADRANT
100 102
7 7
5 5 IFGT I
MINIMUM
3 I QUADRANT 3 IRGT I
CHARAC-
2 TERISTICS 2
VALUE
10–1 101 0
10–1 2 3 5 7 100 2 3 5 7 101 10 2 3 5 7 101 2 3 5 7 102

RATE OF DECAY OF ON-STATE GATE CURRENT PULSE WIDTH (µs)

COMMUTATING CURRENT (A/ms)

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS

6Ω 6Ω

6V A 6V A
V RG V RG

TEST PROCEDURE 1 TEST PROCEDURE 2

6Ω

A
6V
V RG

TEST PROCEDURE 3

Mar.2002
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