2092 IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO.

12, DECEMBER 2013

Localized Planar EBG Structure of CSRR

for Ultrawideband SSN Mitigation
and Signal Integrity Improvement
in Mixed-Signal Systems
Hao-Ran Zhu, Student Member, IEEE, and Jun-Fa Mao, Fellow, IEEE

Abstract— In this paper, a power plane with localized
planar electromagnetic bandgap (EBG) structure is designed for
suppressing simultaneous switching noise (SSN) in mixed-signal
systems. Nonbianisotropic complementary split ring resonator
with a bandgap behavior is used to constitute the EBG cells,
which are partially located on the power plane to prohibit the
noise propagation within the board. An equivalent circuit model
is proposed to predict the lower cutoff frequency of the trans-
mission behavior. From the measured results, an ultrawideband
mitigation of SSN from 0.26 to 25 GHz is achieved with a
high suppression level of −50 dB. Furthermore, signal integrity
problem is investigated, and it is found that partial discontinuities
of the proposed design can reduce the influence on signal quality
compared with the traditional global EBG structure. In addition,
the proposed design can lower the electromagnetic interference
radiation from edges of the board.
Index Terms— Complementary split ring resonator (CSRR),
electromagnetic bandgap (EBG), localized suppression, signal
integrity (SI), simultaneous switching noise (SSN).
I. I NTRODUCTION
S IMULTANEOUS switching noise (SSN) generated by
fast switching device of high-speed digital circuits has
become a big challenge for modern mixed-signal systems,
especially with the trend of fast signaling edge rate, increas-
ingly higher operating clock frequency and lower power
supply voltage, and noise margin. SSN can lead to significant
voltage fluctuation and result in severe signal/power integrity
(SI/PI) and electromagnetic interference (EMI) problems in
the power distribution network (PDN). Therefore, wide and
steep suppression of SSN associated with good SI perfor-
mance and low EMI radiation has attracted extensive attention
in design of high-speed printed circuit boards (PCBs) and
packages [1]–[3].
Recently, many approaches for reducing the SSN coupling
in PDN have been reported [4]–[10]. In [11], multiconcen-
Manuscript received October 10, 2012; revised March 13, 2013 and
May 30, 2013; accepted July 5, 2013. Date of publication July 24, 2013;
date of current version December 9, 2013. This work was supported by the
National Basic Research Program (973 Program) under Grant 2009CB320202
of China. Recommended for publication by Associate Editor D. G. Kam upon
evaluation of reviewers’ comments.
The authors are with the Key Laboratory of Ministry of Education of China
for Research of Design and Electromagnetic Compatibility of High Speed
Electronic Systems, Shanghai Jiao Tong University, Shanghai 200240, China
(e-mail: hrzhu86@gmail.com; jfmao@sjtu.edu.cn).
Color versions of one or more of the figures in this paper are available
online at http://ieeexplore.ieee.org.
Digital Object Identifier 10.1109/TCPMT.2013.2272788
2156-3950 © 2013 IEEE
tric complementary split ring resonators (CSRRs) structure
is presented to reduce the noise coupling within the board.
To achieve wideband noise suppression, several CSRRs that
resonate at different frequencies are designed concentrically
to cover multiple bandgap regions. It is well known that
the electromagnetic bandgap (EBG) structure takes a good
advantage of wideband mitigation of SSN in multilayer cir-
cuits. Mushroom EBG structure, also called high-impedance
surface, has been investigated for noise prohibition in
PCBs [12]–[14]. Multilayer substrates with additional metal
layers are, however, expensive. Thus, planar EBG pattern [15]
has been introduced to overcome the cost. As the forbidden
frequencies of EBG structure are limited to operate above
subgigahertz, many structures have been proposed to lower
the cutoff frequency, such as the vertical stepped impedance
EBG [16], meander L-bridged EBG [17], S-bridged EBG [18],
and lumped chip inductor EBG [19] and so on. These methods
adopt inductive bridge instead of the conventional straight
line between the neighboring EBG patterns. In addition, high
dielectric constant material EBG [20], [21], artificial substrate
EBG [22], alternating impedance EBG [23], [24], and partial
placement of EBG [25], [26] have been applied to wideband
SSN mitigation in high-speed circuits. Planar EBG structures,
however, deteriorate the SI performance as the continuity of
return current path is destroyed.
In most of the mixed-signal systems, the noise sources
(such as high-speed digital circuits) and the critical noise
sensitive RF/analog devices tend to locate in some specific
area. Therefore, if the EBG patterns are locally placed near
critical areas within the package, the design can not only
reduce the noise coupling in the board, but also minimize
the impact on signal transmission quality. On the other hand,
complementary split ring resonator (CSRR), treated as arti-
ficial material with negative permittivity, exhibits a bandgap
behavior upon an axial electrical field excitation [27]. Owing
to its filtering property, the CSRR has been widely applied
to microwave devices such as filter, antenna, coupler, power
divider, and so on [28]. Little work has been, however, focused
on application of CSRR for eliminating noise coupling in
mixed-signal system.
In this paper, a power plane with localized planar EBG
structure is proposed for ultrawideband SSN mitigation with
a high suppression level. Nonbianisotropic CSRR(NBCSRR),
which has a wide bandgap and is compact [28], is employed
ZHU AND MAO: LOCALIZED PLANAR EBG STRUCTURE
Fig. 1. 3-D view of the localized NBCSRRs-type planar EBG etched on the
power plane.
Fig. 2. Top view of two adjacent EBG unit cells connected with L-bridge.
to constitute the EBG patterns that are partially located on
the power plane. An ultrawideband mitigation of SSN from
0.26 to 25 GHz is achieved with the noise suppression margin
of −50 dB. The partial discontinuity structure can reduce the
influence on signal quality. In addition, the EMI radiation from
edges of the board can be reduced with the proposed design.
This paper is organized as follows. In Section II, design of the
localized EBG structure for SSN suppression and equivalent
circuit model are given. In Section III, the impact of proposed
EBG-patterned power plane on SI performance is investigated.
In Section IV, EMI radiation from the edges of the proposed
board is measured and analyzed. Finally, a conclusion is drawn
in Section V.
II. EBG S TRUCTURE D ESIGN AND SSN M ITIGATION
A. EBG Structure Design and Analysis
Fig. 1 shows the 3-D view of the proposed power/ground
planes with localized EBG structure. The noise source and
noise sensitive circuits are located at port 1 and port 2,
respectively. Two arrays of 3 × 3 NBCSRR-type EBG unit
cells are locally etched on the power plane, while the ground
plane is continuous for SI consideration. Ports 1 and 2 are
located in the center of the two EBG arrays, respectively.
Another two ports, port 3 and port 4, are located symmetrically
in the board. In Fig. 1, a represents the side length of testing
board, h is the height of the substrate, l is the side length of
the EBG unit cell, and lb is the length of continuous area.
The top view of two proposed EBG unit cells and the
corresponding geometrical parameter notations are shown in
Fig. 2, where d is the dimension of the innersquare patch,
g is the gap size of the split, and s and w are the widths
2093
Fig. 3. 1-D equivalent circuit model of the dashed rectangular area in Fig. 1
for predicting the lower cutoff frequency of S21 .
of slot and arm, respectively. L-bridge is used to connect
the neighboring cells, where wl1 and wl2 are the width of
bridge and the distance between two adjacent EBG unit cells,
respectively.
For the proposed localized EBG structure, unit cells are
not distributed on the whole power plane, thus, the transmis-
sion behavior cannot be analyzed through conventional meth-
ods [14], [29]. Following the idea in [30] for approximately
predicting the lower cutoff frequency f lc between port 1 and
port 2, a simplified 1-D equivalent circuit model of the dashed
rectangular area in Fig. 1 is proposed and shown in Fig. 3, in
which the continuous area in Fig. 1 is modeled as a simple
transmission line. In general, the circuit demonstrates better
performance in dc to L-band. High spurious modes will be
induced within the parallel-plate waveguide with the increase
of operating frequency. At higher frequency, the mode below
microstrip line in the continuous area is no longer TEM mode,
and it cannot be treated as a simple transmission line.
In Fig. 3, the components marked within the solid rectangle
are presented to characterize the propagation behavior between
the NBCSRR and the continuous ground plane. L p and C p
represent the equivalent inductance and capacitance of the
innerpatch, respectively, which can be expressed as [19]
L p = μ0 h (1)
d2
C p = εr ε0 (2)
h
where εr is the dielectric constant of substrate, μ0 and ε0 are
the permeability and permittivity of free space, respectively.
Cnb stands for the capacitance of the coplanar waveguide
(CPW) of the arm in the NBCSRR, and L nb indicates the
inductance of the parallel combination of two segments CPWs.
Cnb and L nb are calculated as [31]
4w(d + 2s + w)
Cnb = εr ε0 (3)
h
L nb = (d + 2s + w)L pul (4)
in which L pul is the inductance of the CPW per unit length
and can be calculated by
√ 
L pul = Z CPW εeffc c (5)
2094 IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO. 12, DECEMBER 2013

where Z CPW and εeffc are the impedance and effective dielec- TABLE I
tric constant of the CPW, respectively. C OMPARISON B ETWEEN THE C ALCULATED AND S IMULATED
The circuits within the dotted region in Fig. 3 are to C UTOFF F REQUENCIES FOR D IFFERENT VALUES OF d
describe the bridge effect between the adjacent EBG unit cells.
The bridge can be considered as a CPW, while its parasitic
capacitance is neglected and the inductance L b is expressed
as
L b = (l + wl2 − wl1 )L pul . (6)
The fringe capacitance C g is induced by the gap between
two neighboring EBG unit cells and can be calculated by [19]
 
ε0 (1 + εr ) l + wl2
Cg = l cosh−1 . (7)
π wl2
B. Simulated and Measured Results of SSN Suppression
The characteristic impedance and electrical length of the
To validate our design, a sample PDN is simulated and
equivalent transmission line in Fig. 3 are given by Zb and θb ,
fabricated on FR-4 substrate with relative permittivity of
respectively, as below [31]
εr = 4.4, loss tangent of tan δ = 0.02, substrate thickness
η0 h of h = 0.2 mm, and copper thickness of t = 35 μm.
Zb = √ (8)
εr l The board has a size of 180 mm × 180 mm, and the design
and √ parameters are d = 26 mm, g = 1 mm, l = 28.3 mm,
ω εr 1 lb = 92 mm, s = w = 0.3 mm, wl1 = 0.3 mm, and
θb = (9)
c lb wl2 = 0.9 mm. Four testing ports are located at (45 mm,
where η0 is the wave impedance of free space, ω is the radian 45 mm), (135 mm, 135 mm), (45 mm, 135 mm), and (135 mm,
frequency, and c is the light velocity in vacuum. 45 mm), respectively, as shown in Fig. 1. The performance of
Using ABCD matrix, the transfer matrix for the NBCSRR the proposed EBG structure is simulated with 3-D full-wave
unit cell can be expressed as electromagnetic simulator (Ansoft High Frequency Structure
⎡ ⎤ Simulator) [32]. For the modeling setup, wave port is applied
j ωL nb (1−ω2 L p C p )
1 − ω2 L p C p 2 + j ωL p to the input and output. Radiation boundary condition is set
Tnb = ⎣ ⎦
1−ω L nb C nb
(10) to the air box.
1−ω2 L nb (C nb +C p )
j ωC p 1−ω2 L C The dimension of the EBG patterns has an influence on
nb nb
the suppression behavior of the proposed PDN. The lower
where ω is given by
cutoff frequencies for different values of d (other geometric
ω = 2π flc . (11)
parameters of the EBG structure remain unchanged) are given
For the bridge between adjacent EBG unit cells, its corre- in Table I. The corresponding inductance and capacitance
sponding transfer matrix is derived as in the circuit model of Fig. 3 calculated by (1)–(7) are

L p = 0.1 nH, L b = 8.43 nH, and C g = 1.69 pf. The mag-
1 1−ω2 Lj ωL
(C
b
+C ) nitude of the insertion loss at cutoff frequency is set to be
Tbr = b b g (12)
0 1 −50 dB. As shown in Table I, the capacitance C p of the
and the transfer matrix of the continuous area is: innerpatch and the inductance L nb of the arm both become

large with the increase of d, and the lower cutoff frequency
cos θb j Z b sin θb decreases correspondingly.
TTL = j sin θb . (13)
Zb cos θb To verify the accuracy of the proposed equivalent
circuit model, the cutoff frequency calculated from the formu-
According to the equivalent circuit model described in
las (10)–(15) is compared with the simulated cutoff frequency
Fig. 3, the transfer matrix of the whole circuit model can be
in Table I. The size of partial EBG unit cell is gradually
written as
decreased while the dimension of board remains unchanged.
T = Tnb Tbr Tnb Tbr Tnb TTL . (14)
From the Table I, good agreements are observed between
Then, the insertion loss of the circuit model is the simulated and calculated results. Small discrepancies con-
2 tributed to that parasitic parameters in the equivalent circuit
S21 =  (15) model are not considered.
T11 + T12 Z 0 + T21 Z 0 + T22 The influence of the width w of arm on SSN mitigation
where Z 0 is the port impedance, Tii is the elements of the performance is also investigated by full-wave simulation.
transfer matrix calculated by (14). Fig. 4 shows the relation between f lc and w. The reduction
Therefore, the lower cutoff frequency f lc can be estimated of w leads to a larger inductance L nb of arm, which can
approximately from (10)–(15) for an expected mitigation level result in the reducing of f lc . In addition, we can observe from
of |S21 | (e.g., −50 dB). The prediction accuracy for f lc will the figure that w has little effects on the SSN suppression
be verified by simulated and measured results in the following performance. It is because that the values of w, wl1 , and
section. wl2 are much smaller than d, the corresponding L nb , L b are
ZHU AND MAO: LOCALIZED PLANAR EBG STRUCTURE
Fig. 4. Simulated transmission coefficients of the proposed PDN for different
values of w.
Fig. 5. Simulated transmission coefficients of the proposed PDN between
different ports.
nearly not changed when compared with the variation of C p .
The similar characteristics of wl1 and wl2 are also demon-
strated.
Fig. 5 shows the simulated SSN suppression characteristics
when the noise receiving ports are located at different posi-
tions, i.e., as port 2, port 3, and port 4. The noise source
is excited at port 1. From the figure, the SSN propagation
between port 1 and port 3 can be prohibited from 0.28 to
25 GHz under the suppression level of −40 dB. Owing to
the symmetric structure, similar behavior is also observed
between port 1 and port 4. As the NBCSRR-type EBG
structures are partially located around port 1, although the area
around ports 3 and 4 is continuous, the SSN coupling can be
reduced sufficiently. In addition, the maximum noise reduction
capability is obtained between ports 1 and 2 because of the
surrounded EBG patterns. From Fig. 6, the simulated current
distribution of the proposed structure in 2.5 GHz is shown.
Furthermore, the transmission behaviors of PDN with dif-
ferent dimensions of board are discussed, while other parame-
ters remain unchanged. More parallel-plate resonances in the
suppression band will be induced with larger PCB board size.
The noise propagation can be, however, prohibited efficiently
with localized EBG structure. From Fig. 7, the noise mitigation
performances are almost unchanged with the increase of a.
2095
Fig. 6. Simulated current distribution of the proposed structure in 2.5 GHz.
Fig. 7. Simulated transmission behaviors for different values of a.
A testing board shown in Fig. 8 is fabricated. Vector network
analyzer (VNA) Agilent 8722ES is employed to measure
the transmission responses of the proposed EBG patterns.
The measured insertion loss of the proposed structure and
reference solid board is shown in Fig. 9, with the simulated
results also given for comparison. From the figure, it is found
that the SSN is suppressed significantly with our design.
The measured noise mitigation bandwidth of the proposed
EBG structure is from 0.26 to 25 GHz with a suppression level
of −50 dB. Furthermore, the −50 dB lower cutoff frequency
f lc predicted by (10)–(15) is around 0.25 GHz, which is
close to the measured one. Reasonable agreement is achieved
between the simulated and measured results. The discrepancies
between them are attributed to the tolerance in the fabricate
process and the dissipation properties of the FR-4 substrate.
The measured noise mitigation capability is compared
between our proposed design and some of the previous meth-
ods, as listed in Table II. It is shown that the proposed structure
can eliminate the noise propagation in an ultrawideband with
high suppression level.
NBCSRR, treated as artificial material with negative per-
mittivity, exhibits a bandgap behavior upon an axial electrical
field excitation [27]. If NBCSRR is applied to bandstop
filter design, a high suppression level and wide stopband
characteristic can be achieved [28]. Therefore, to improve
2096 IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO. 12, DECEMBER 2013
Fig. 8. Photograph of the fabricated board.
Fig. 9. Simulated and measured |S21 | parameters of the proposed PDN in
comparison with the corresponding results of reference board.
the noise mitigation performance of the PDN, NBCSRR is
employed to constitute the EBG patterns, which are partially
located on the power plane. The SSN suppression behavior of
our proposed design is compared with some of the localized
EBG structure. The EBG unit cell is consisted by typical
resonators. For all the structures, the used substrate and the
size of EBG unit cell are modified to the same as our design,
where εr = 4.4, h = 0.2 mm, and l = 28.3 mm. As can
be seen from Fig. 10, in contrast with previous resonators,
the lower cutoff frequency of the proposed PDN is lowered
significantly and the noise mitigation bandwidth is wider with
a suppression level of −50 dB. Both wide suppression band
and high rejection level are achieved simultaneously with our
design, as NBCSRRs inherently hold a filtering property.
The transmission behavior of the traditional global EBG
structure and the proposed localized EBG pattern is shown in
Fig. 11, and the insertion loss of the reference solid board is
presented for comparison. As shown in the figure, the noise
prohibition behavior of the proposed partial EBG structure is
similar to that of a 6 × 6 NBCSRR-type EBG pattern globally
etched on the power plane. Thus, the proposed localized
EBG structure can achieve a wideband noise suppression
TABLE II
S UMMARY OF SSN S UPPRESSION W ITH D IFFERENT T ECHNOLOGY
Fig. 10. Comparison of the transmission behavior between the proposed
design and some previous resonators for localized EBG structure.
performance with a reduced number of EBG unit cells com-
pared with the global EBG structure. In addition, the SI
performance of the localized EBG structure is better than
the global EBG pattern, which will be discussed in the next
section.
III. I MPACT OF EBG P OWER P LANE ON SI
With the above analysis, the EBG structure of NBCSRRs
has a good performance of SSN mitigation. The periodic slits
on the EBG pattern will, however, affect the continuity of
return current path. The SI behavior may be degenerated if the
periodic EBG structure is treated as reference plane. In this
section, the influence of the proposed localized structure on
the SI performance is analyzed.
The eye diagram, which gives a good indication of the signal
quality, is employed for investigating the SI characteristic in
the time domain. As shown in Fig. 12, a pattern source of
27 -1 pseudorandom bit sequence (PRBS), nonreturn to zero,
is launched at port 1. The signal propagation behavior is
ZHU AND MAO: LOCALIZED PLANAR EBG STRUCTURE 2097

Fig. 11. Comparison of the simulated transmission behavior for the reference
board, global EBG structure, and localized EBG pattern on the power plane.

Fig. 13. Measured eye diagrams for comparisons of SI performances.

(a) Case I: solid board for reference. (b) Case II: global EBG structure.
(c) Case III: localized EBG structure.
Fig. 12. 3-D view of three-layer PCBs with signal trace referenced to the
power plane. (a) Global EBG structure. (b) Localized EBG structure.
TABLE III
S UMMARY OF S IGNAL I NTEGRITY P ERFORMANCES

monitored at port 2. The PRBS is coded at 1 GHz, with swing

of 1 V and nominal rise/fall time of 120 ps. We measure
the eye diagram using Agilent E5071C-TDR. Two parameters,
maximum eye open (MEO in millivolt) for noise margin and
maximum eye width (MEW in nanosecond) for jitter margin,
are used as metrics of the eye pattern quality. Usually, the
larger the MEO and MEW, the better the SI performance.
We consider a three-layer PCB board for SI analysis and plane of global EBG structure. For the third case, the reference
compare it against three different cases. The signal propagates plane is the proposed localized EBG pattern, as shown in
along a 50 microstrip trace on the top signal layer with Fig. 12(b). The solid board geometry is 180 mm × 180 mm,
w0 = 1.5 mm. In the first case, the signal trace is referenced to the same to the previous PDN design in this paper.
the board with power and ground planes both solid. Fig. 12(a) Fig. 13(a)–(c) shows the simulated eye patterns for three
shows the second case, the signal trace is referenced to the different cases. The corresponding SI performances are
2098 IEEE TRANSACTIONS ON COMPONENTS, PACKAGING AND MANUFACTURING TECHNOLOGY, VOL. 3, NO. 12, DECEMBER 2013
Fig. 14. Transmission behaviors of the signal trace for different cases.
Fig. 15. Experiment setup for testing near-field EMI radiation.
summarized in Table III. In comparison with the reference
solid board, the degradations of the MEO and MEW for
case II are about 15.67% and 1.22%, respectively. For case
III, the degradations of MEO and MEW are reduced to 7.92%
and 0.70%, respectively. It is clearly observed that the SI
performances of the case III are better than case II. The main
reason for the worse SI behavior of case II is that the return
current path of the signal trace is damaged seriously. Thus,
the influence on the signal quality can be reduced with the
proposed localized EBG pattern.
In Fig. 14, the transmission behavior of the signal trace for
three different cases is depicted and compared in the frequency
domain. From the figure, the transmission characteristic of the
global EBG structure is worse than the counterpart of the
localized one. In addition, by employing the localized EBG
structure to replace the global EBG pattern in the PDN, the
effect of perforated reference plane can be minimized, which
can improve the SI performance.
IV. EMI R ADIATION A NALYSIS
In compliance of the stringent electromagnetic compati-
bility regulation, low EMI radiation is important for high-
speed mixed-signal systems. As the return current is forced
to flow around the period slits in the EBG structures, the
radiation is accumulated by time-varying fringing E-field from
the edge of the board [33]. Therefore, it is necessary to
Fig. 16. Measured field leakage for both solid and proposed boards with
monopole antenna located 10 mm away from the PCB edge.
Fig. 17. Measured field leakage for both solid and proposed boards with
monopole antenna located 20 mm away from the PCB edge.
analyze the EMI radiation from the edge of the proposed
board.
The quantity of the EMI radiation from the edge of PCB
board is evaluated by measuring the scattering parameters
at various testing points around the board. Fig. 15 shows
the experimental setup to characterize the EMI radiation.
A reference board with solid power and ground planes is
also measured for comparison. The signal generated by the
VNA is fed to the parallel-plate testing board through a
SMA connector. A quarter wavelength monopole antenna is
employed to capture energy leaked from the edge of the
PCB board. The feed position is located at the center of
EBG patterns. Meanwhile, another cable of the VNA connects
the monopole antenna, which represents the receiver in the
experimental setup. Three testing points are chosen to measure
the near-field EMI radiation from the edge of PCB board, as
shown in Fig. 15.
The Anritus 37247D VNA is used for the measurement
of EMI radiation, which is carried out in a fully shielded
chamber. Figs. 16 and 17 show the measured EMI results
when the receiving antenna is away from the edge of the PCB
board by 10 and 20 mm, respectively. A −60 dB low EMI
leakage with a wide frequency range is observed. Furthermore,
ZHU AND MAO: LOCALIZED PLANAR EBG STRUCTURE
Fig. 18. Measured field leakage for the solid and proposed boards with
monopole antenna located 10 mm away from the PCB edge corner.
in comparison with the reference board, especially within
the frequency range from 1 to 5 GHz, more than −20 dB
suppression of the near-field EMI radiation is achieved with
the proposed board. The reason for lower EMI radiation is the
transmission energy coupling within the board is reduced by
EBG structure. The amplitude of the noise signal is gradu-
ally dropped down after travelling across the EBG patterns.
Because the magnitude of the self-impedance and transfer
impedance of the plane pairs can reach maximum at the
resonant frequencies of the parallel-plate board, serious SI or
EMI problems can be induced by large impedance within the
package [34]. Therefore, a relative high radiation is induced
between 5 and 6 GHz.
The similar EMI radiation behavior is observed at the corner
of the board. From Fig. 18, the proposed structure can reduce
the EMI leakage from the corner of the board compared with
the reference one. That is to say, the proposed EBG pattern
can shield the edge of the board and reduce the radiation level
from such edges effectively.
V. C ONCLUSION
A localized planar EBG structure with NBCSRRs for
high-speed-mixed signal systems is presented in this paper.
The NBCSRR has a characteristic of bandgap behavior, and it
is applied in the EBG patterns to prohibit the SSN propagation
between power and ground planes. An equivalent circuit
model is developed to predict the lower cutoff frequency of
transmission response. It is shown that the proposed PDN
can reduce the SSN coupling from 0.26 to 25 GHz with a
suppression level of −50 dB. The measurements are in good
agreement with simulation predictions. In comparison with
global EBG structures, good SI characteristic is achieved with
partial placement of the EBG patterns, indicating that partial
discontinuities can reduce the influence on signal transmission.
Furthermore, a low EMI radiation is observed with our design.
ACKNOWLEDGMENT
The authors would like to thank the reviewers for their con-
structive comments and suggestions. They also acknowledge
2099
Dr. W. Shen, Dr. M. Zhang, Dr. J. Li, and Mr. G. Gao for
their valuable discussions on this paper.
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Hao-Ran Zhu (S’10) was born in Anhui, China,
in 1986. He received the B.S. degree in electronic
engineering from the Anhui University of Technol-
ogy, Anhui, China, in 2007, and the M.S. degree
in electronic engineering from Anhui University,
Anhui, in 2010. He is currently pursuing the Ph.D.
degree in electrical engineering with Shanghai Jiao
Tong University, Shanghai, China.
His current research interests include the power
integrity and signal integrity analysis of high-speed
circuits, and microwave passive circuit design.
Jun-Fa Mao (M’92–SM’98–F’11) was born in
1965. He received the B.S. degree in radiation
physics from the University of Science and Tech-
nology of National Defense, Hunan, China, in 1985,
the M.S. degree in experimental nuclear physics
from the Shanghai Institute of Nuclear Research,
Shanghai, China, in 1988, and the Ph.D. degree
in electronic engineering from Shanghai Jiao Tong
University, Shanghai, in 1992.
He has been a Faculty Member with Shanghai Jiao
Tong University, since 1992, where he is currently
a Chair Professor and the Dean of the School of Electronic, Information and
Electrical Engineering. He was a Visiting Scholar with the Chinese University
of Hong Kong, Hong Kong, from 1994 to 1995, and a Post-Doctoral
Researcher with the University of California, Berkeley, CA, USA, from 1995
to 1996. He has authored or co-authored more than 190 journal papers
(including 88 IEEE journal papers) and 120 international conference papers.
His current research interests include interconnect and package problem of
integrated circuits and systems, and analysis and design of microwave circuits.
Dr. Mao received the National Natural Science Award of China in 2004,
the National Technology Invention Award of China in 2008, the National
Science and Technology Advancement Award of China in 2012, and the Best
Paper Award of 2008 Symposium of APEMC. He is a Chief Scientist of The
National Basic Research Program of China, a Project Leader of the National
Science Foundation for Creative Research Groups of China, a Cheung Kong
Scholar of the Ministry of Education, China, an Associate Director of the
Microwave Society of China Institute of Electronics, the Chair of the IEEE
Shanghai Section from 2007 to 2009, and the Chair of IEEE MTT-S Shanghai
Chapter from 2009 to 2013.