www.rejinpaul.

com

a) resistor
b) inductor
EC8701 ANTENNAS c) capacitor
d) transistor
AND MICROWAVE Answer: d

om
ENGINEERING Explanation: A non linear device has the
ability to generate the harmonics of the input
sinusoidal signal. Transistor and diodes are

ECE - 7th Semeseter non linear devices and hence can be used as a
frequency multiplier.

3. The major drawback of frequency

.c
Regulations - 2017 multipliers is that they have:
a) higher attenuation
b) complex construction methods

ul
c) complex design
d) none of the mentioned
UNIT I INTRODUCTION pa Answer: c
TO MICROWAVE Explanation: Designing a good quality
frequency multiplier is more difficult since it
SYSTEMS AND non-linear analysis, matching at multiple
ANTENNAS frequencies, stability analysis and thermal
considerations. Considering all these issues
jin
for designing a multiplier makes it very
TOPIC 1.1 MICROWAVE complex.
FREQUENCY BANDS
4. A reactive diode multiplier uses _______
as the key electronic component for
1. Oscillators operating at millimeter
.re

frequency multiplication.
wavelength are difficult to realize and are also a) zener diode
less efficient. b) light emitting diode
a) true c) varactor diode
b) false d) Gunn diode
w

Answer: a
Explanation: As frequency increases to the
millimeter wave range, it becomes
increasingly difficult to build fundamental
w
Answer: c
Explanation: Reactive diode multipliers use
either a varactor diode or step recovery diode

biased to present a non linear junction

frequency oscillators with good power, capacitance. Since losses in these diodes are
stability and noise characteristics. An low, the fraction of RF power converted to
alternative approach is to produce a harmonic the desired harmonic is relatively high.
w

of a low frequency oscillator through the use

of frequency multiplier. 5. A major disadvantage of frequency
multipliers is that they multiply the noise
2. __________ is an example for a frequency factor along with frequency.
multiplier.

Downloaded updated materials from Rejinpaul Network App


a) true
b) false
Answer: a
Explanation: A disadvantage of frequency
multipliers is that noise levels are also
increased by the multiplication factor.
Frequency multiplication process is a phase
multiplication process as well, so phase noise
variations get multiplied by the same factor as
the frequency gets multiplied.
6. If a frequency multiplier has a
multiplication factor of 10, then the increase
in noise level due to frequency multiplication
is:
a) 10 dB
b) 20 dB
c) 25 db
d) 15 dB
Answer: b
pa
Explanation: For a frequency multiplier, the
increase in noise power is given by 20 log n,
where n is the multiplication factor of the
multiplier. Substituting in the below equation,
jin
increase in noise level is 20 dB.
7. In a diode frequency multiplier, an input
signal of frequency fo applied to the diode is
.re
terminated with_________ at all frequencies
other than required harmonic.
a) real impedances
b) reactive impedance
c) complex impedance
d) none of the mentioned
w
Answer: b
Explanation: In a diode frequency multiplier,
an input signal of frequency fo applied to the
w
diode is terminated with reactive impedance
at all frequencies other than required
harmonic nfo. if the diode junction
w
capacitance has a square –law I-V
characteristic , it is necessary to terminate
unwanted harmonics with short circuit.
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
8. Resistive multipliers are more efficient as
compared to reactive multipliers.
a) true
b) false
Answer: b
om
Explanation: Resistive multipliers generally
use forward biased Schottky-barrier diodes to
provide non linear characteristic. Resistive
multipliers have low efficiency but have
better bandwidth.
9. Reactive multipliers have a disadvantage
.c
that they cannot be used at very high
frequencies and they become less efficient.
a) true
b) false
ul
Answer: a
Explanation: At millimeter frequencies,
varactor diode exhibits resistive property.
Hence, at high frequency the multiplier
becomes lossy and also does not offer high
bandwidth, which is a major disadvantage.
10. For a resistive frequency multiplier of
multiplication factor 2, the maximum
theoretical conversion efficiency is:
a) 50 %
b) 25 %
c) 75 %
d) 12.5 %
Answer: b
Explanation: For a resistive frequency
multiplier of multiplication factor 2, the
maximum theoretical conversion efficiency is
given by 1/m2 where m is the multiplication
factor. For a factor 2 multiplier, maximum
theoretical conversion efficiency is 25 %.
TOPIC 1.2 PHYSICAL CONCEPT
OF RADIATION
1. The basic requirements of transmitting
antennas are:
a) High efficiency
 www.rejinpaul.com

b) Low side lobes two lines that chary the TEM wave
c) Large signal to noise ratio approaches λ the wave tends to be radiated so
d) Lone of the mentioned that the opened – out line act as an antenna
which lunches a free space wave.
Answer: a
Explanation: The basic requirements of a 5. The number of patterns radiation pattern

om
transmitting antenna are high gain and required to specify the characteristic are :
efficiency while requirements of receiving a) Three
antennas are low side lobes and large signal b) Four
to noise to ratio. c) Two
d) Five
2. _________ is a device that converts
electrons to photons or vice-versa. Answer: a

.c
a) Antenna Explanation: The three patterns required are,
b) Electron gun θ component of the electric field as the
c) Photon amplifier function of the angles as θ and φ, the φ
d) Microwave tube component of the electric field as the function

ul
of the angles θ and φ, the phase of these fields
Answer: a as a functions of the angle φ and θ .
Explanation: Antenna is a device that
converts electrons into photons or vice versa. 6. The beam width of the antenna pattern
pa
A transmitting antenna converts electrons into
photons while a receiving antenna converts
measured at half power points is called:
a) Half power beam width
photons into electrons. b) Full null beam width
c) Beam width
3. The basic equation of radiation that is d) None of the mentioned
jin
applied to any antenna irrespective of the type
of the antenna is: Answer: a
a) iL= Qv Explanation: The beam width of an antenna
b) iQ = Lv measure at half of the maximum power
c) i/L=Q/v received by an antenna or the 3 dB beam
.re

d) None of the mentioned width of the antenna is termed as half null

beam width.
Answer: a
Explanation: Basic equation of radiation is 7. An antenna has a field pattern of E (θ) =
given by iL=Qv. i is the time change in cos2 θ, θ varies between 0 and 900. Half
w

current, l is the length of the current element, power beam width of the antenna is:
q is the charge v is the acceleration of the a) 330
charge.
b) 660
w

4. When the separation between two lines that c) 12000

carry the TEM wave approaches λ the wave d) None of the mentioned
tends to be radiated.
Answer: b
w

a) True
b) False Explanation: Half power beam width of the
antenna is obtained by equating the field
Answer: a pattern of the antenna to 0.707 (half power
Explanation: When the separation between point) and finding θ. 2θ gives the value of
beam width. Solving the given problem in the

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

same flow, half power beam width of the intensity. Unit of radiation intensity is watts
antenna is 660. per steridian or per square degree.

8. An antenna has a field pattern E (θ) =cos θ. TOPIC 1.3 NEAR- AND FAR-
cos 2θ. The first null beam width of the
antenna is: FIELD REGIONS

om
a) 450
b) 900 TOPIC 1.4 FIELDS AND POWER
c) 1800 RADIATED BY AN ANTENNA
d) 1200

Answer: b TOPIC 1.5 ANTENNA PATTERN

.c
Explanation: Half power beam width of the CHARACTERISTICS
antenna is obtained by equating the field
pattern of the antenna to 0.707 (half power
point) and finding θ. 2θ gives the value of TOPIC 1.6 ANTENNA GAIN AND

ul
beam width. Twice the half power beam EFFICIENCY
width gives the first null beam width. With
the same steps applied, the half power beam
TOPIC 1.7 APERTURE
width is 900.
pa
width of the antenna is 450. First null beam
EFFICIENCY AND EFFECTIVE
AREA
9. The solid area through which all the power
radiated by the antenna is:
1. A __________ is a device that converts a
jin
a) Beam area
guided electromagnetic wave on a
b) Effective area
transmission line into a plane wave
c) Aperture area
propagating in free space.
d) Beam efficiency
a) Transmitting antenna
b) Receiving antenna
.re

Answer: a
Explanation: The beam area is the solid c) Radar
angle through which all of the power radiated d) Mixer
by the antenna would stream if P (θ, φ)
Answer: a
maintained its maximum value over beam
Explanation: A transmitting antenna is a
area and zero elsewhere. This value is
w

device that converts a guided electromagnetic

approximately equal to the angles subtended
wave on a transmission line into a plane wave
by the half power points of the main lobe in propagating in free space. It appears as an
the two principal planes.
electrical circuit on one side, provides an
w

10. Power radiated from an antenna per unit interface with a propagating plane wave.
solid angle is called radiation intensity.
2. Antennas are bidirectional devices.
a) True
w

a) True
b) False
b) False
Answer: a Answer: a
Explanation: Power radiated from an antenna Explanation: Antennas can be used both as
per unit solid angle is called radiation

Downloaded updated materials from Rejinpaul Network App


transmitters and receivers. As transmitters
they radiate energy to free space and as
receivers they receive signal from free space.
Hence, they are called bidirectional devices
as they are used at both transmitting end and
receiving end.
3. Dipole antennas are an example for:
a) Wire antennas
b) Aperture antennas
c) Array antennas
d) None of the mentioned
Answer: a
Explanation: Dipoles, monopoles, oops,
Yagi-Uda arrays are all examples for wire
antennas. These antennas have low gains, and
are mostly used at lower frequencies.
4. _________ antennas consist of a regular
arrangement of antenna elements with a feed
network
a) Aperture antennas
pa
b) Array antennas
c) Printed antennas
d) Wire antennas
jin
Answer: b
Explanation: Array antennas consist of a
regular arrangement of antenna elements with
a feed network. Pattern characteristics such as
.re
beam pointing angle and side lobe levels can
be controlled by adjusting the amplitude and
phase excitation of array elements.
5. A parabolic reflector used for reception
w
with the direct broadcast system is 18 inches
in diameter and operates at 12.4 GHz. The
far-field distance for this antenna is:
a) 18 m
w
b) 13 m
c) 16.4 m
d) 17.3 m
w
Answer: d
Explanation: Far field distance for a reflector
antenna is given by 2D2/λ. D is the diameter
and λ is the operating signal wavelength.
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
Substituting in the above expression, far field
distance is 17.3 m.
6._________ of an antenna is a plot of the
magnitude of the far field strength versus
position around the antenna.
om
a) Radiation pattern
b) Directivity
c) Beam width
d) None of the mentioned
Answer: a
Explanation: Radiation pattern of an antenna
.c
is a plot of the magnitude of the far field
strength versus position around the antenna.
This plot gives the detail regarding the region
where most of the energy of antenna is
ul
radiated, side lobes and beam width of an
antenna.
7. Antennas having a constant pattern in the
azimuthal plane are called _____________
a) High gain antenna
b) Omni directional antenna
c) Unidirectional antenna
d) Low gain antenna
Answer: b
Explanation: Omni directional antennas
radiate EM waves in all direction. If the
radiation pattern for this type of antenna is
plotted, the pattern is a constant signifying
that the radiated power is constant measured
at any point around the antenna.
8. Beamwidth and directivity are both
measures of the focusing ability of an
antenna.
a) True
b) False
Answer: a
Explanation: Beamwidth and directivity are
both measures of the focusing ability of an
antenna. An antenna with a narrow main
beam will have high directivity, while a
pattern with low beam will have low
directivity.
 www.rejinpaul.com

9. If the beam width of an antenna in two Product of directivity and efficiency thus
orthogonal planes are 300 and 600. Then the gives the gain of the antenna to be 16.2.
directivity of the antenna is:
a) 24 2. Gain of an antenna is always greater than
b) 18 the directivity of the antenna.
c) 36 a) True

om
d) 12 b) False

Answer: b
Explanation: Given the beam width of the
antenna in 2 planes, the directivity is given by
32400/θ*∅, where θ,∅ are the beam widths in
the two orthogonal planes. Substituting in the
Answer: b
Explanation: Gain of an antenna is always
smaller than the directivity of an antenna.
Gain is given by the product of directivity and
radiation efficiency. Radiation efficiency can

.c
never be greater than one. So gain is always
equation, directivity of the antenna is 18.
less than or equal to directivity.
10. If the power input to an antenna is 100
3. A rectangular horn antenna has an aperture

ul
mW and if the radiated power is measured to
area of 3λ × 2λ. Then the maximum
be 90 mW, then the efficiency of the antenna
directivity that can be achieved by this
is:
rectangular horn antenna is:
a) 75 %
a) 24 dB
b) 80 %
c) 90 %
d) Insufficient data
pa b) 4 dB
c) 19 dB
d) Insufficient data
Answer: c
Answer: c
jin
Explanation: Antenna efficiency is defined
Explanation: Given the aperture dimensions
as the ratio of radiated power to the input
of an antenna, the maximum directivity that
power to the antenna. Substituting the given
can be achieved is 4π A/λ2, where A is the
data in the efficiency equation, the efficiency
aperture area and λ is the operating
of the antenna is 90%.
wavelength. Substituting the given values in
.re

the above equation, the maximum directivity

TOPIC 1.8 ANTENNA NOISE achieved is 19 dB.
TEMPERATURE AND G/T
4. A rectangular horn antenna has an aperture
area of 3λ × 2λ. If the aperture efficiency of
1. If an antenna has a directivity of 16 and
w

an antenna is 90%, then the directivity of the

radiation efficiency of 0.9, then the gain of antenna is:
the antenna is: a) 19 dB
a) 16.2 b) 17.1 dB
w

b) 14.8 c) 13 dB
c) 12.5 d) 21.1 dB
d) 19.3
w

Answer: a
Explanation: Gain of an antenna is given by
the product of radiation efficiency of the
antenna and the directivity of the antenna.
Answer: b
Explanation: Given the aperture dimensions
of an antenna, the directivity that can be
achieved is ap4π A/λ2, where A is the
aperture area and λ is the operating

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

wavelength, ap is the aperture efficiency. background noise temperature increases.

Substituting the given values in the above
equation, the directivity achieved is 17.1 dB.
5. If an antenna has a directivity of 16 and is
operating at a wavelength of λ, then the
Also, with the increase of the elevation angle
from the horizon, background noise
temperature increases.
8. The noise temperature of an antenna is

om
maximum effective aperture efficiency is: given by the expression:
a) 1.27λ2 a) radTb + (1-rad) Tp
b) (1-rad) TP
b) 2.56λ2
c) radTb
c) 0.87λ2 d) None of the mentioned
d) None of the mentioned
Answer: a

Answer: a
Explanation: Maximum effective aperture
efficiency of an antenna is given by D λ2/4π,
D is the directivity of the antenna.
.c
Explanation: The noise temperature of an
antenna is given by the expression radTb +
(1-rad) Tp. here, Tb is the brightness
temperature and Tp is the physical

ul
Substituting in the equation the given values, temperature of the system. rad is the radiation
the maximum effective aperture is 1.27λ2. efficiency. Noise temperature of a system
pa depends on these factors.
6. A resistor is operated at a temperature of
300 K, with a system bandwidth of 1 MHz 9. Low is the G/T ratio of an antenna, higher
then the noise power produced by the resistor is its efficiency.
is: a) True
a) 3.13×10-23 watts b) False
jin
b) 4.14×10-15 watts Answer: b
c) 6.14×10-15 watts Explanation: In the G/T ratio of an antenna,
d) None of the mentioned G is the gain of an antenna and T is the
antenna noise temperature. Higher the G/T
Answer: b ratio of an antenna better is the performance
.re

Explanation: For a resistor noise power of the antenna.

produced is given by kTB, where T is the
system temperature and B is the bandwidth. 10._________ has a constant power spectral
Substituting in the above expression, the density.
noise power produced is 4.14×10-15 watts. a) White noise
w

b) Gaussian noise
7. With an increase in operating frequency, c) Thermal noise
the background noise temperature: d) Shot noise
a) Increases
w

b) Decreases Answer: a
c) Remains constant Explanation: Thermal noise has a power
d) Remains unaffected spectral density for a wide range of
w

frequencies. Its plot of frequency v/s noise

Answer: a power is a straight line parallel to Y axis.
Explanation: The plot of frequency v/s
background noise temperature shows that
with the increase of the signal frequency, the

Downloaded updated materials from Rejinpaul Network App


TOPIC 1.9 IMPEDANCE
MATCHING
1. Slotted line is a transmission line
configuration that allows the sampling of:
a) electric field amplitude of a standing wave
on a terminated line
b) magnetic field amplitude of a standing
wave on a terminated line
c) voltage used for excitation
d) current that is generated by the source
Answer: a
Explanation: Slotted line allows the
sampling of the electric field amplitude of a
standing wave on a terminated line. With this
device, SWR and the distance of the first
voltage minimum from the load can be
measured, from this data, load impedance can
be found.
pa
2. A slotted line can be used to measure
_____ and the distance of _____________
from the load.
a) SWR, first voltage minimum
jin
b) SWR, first voltage maximum
c) characteristic impedance, first voltage
minimum
d) characteristic impedance, first voltage
.re
maximum
Answer: a
Explanation: With a slotted line, SWR and
the distance of the first voltage minimum
from the load can be measured, from this
w
data, load impedance can be found.
3. A modern device that replaces a slotted
line is:
w
a) Digital CRO
b) generators
c) network analyzers
w
d) computers
Answer: c
Explanation: Although slotted lines used to
be the principal way of measuring unknown
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
impedance at microwave frequencies, they
have largely been superseded by the modern
network analyzer in terms of accuracy,
versatility and convenience.
4. If the standing wave ratio for a
om
transmission line is 1.4, then the reflection
coefficient for the line is:
a) 0.16667
b) 1.6667
c) 0.01667
d) 0.96
.c
Answer: a
Explanation: ┌= (SWR-1)/ (SWR+1).
Substituting for SWR in the above equation
for reflection co-efficient, given SWR is 1.4,
ul
reflection co-efficient is 0.16667.
5. If the reflection coefficient of a
transmission line is 0.4, then the standing
wave ratio is:
a) 1.3333
b) 2.3333
c) 0.4
d) 0.6
Answer: b
Explanation: SWR= (1+┌)/ (1-┌). Where ┌
is the reflection co-efficient. Substituting for
the reflection co-efficient in the equation,
SWR is 2.3333.
6. Expression for ϴ means phase angle of the
reflection co efficient r=|r|-e^jθ, the phase of
the reflection co-efficient is:
a) θ=2π+2βLmin
b) θ=π+2βLmin
c) θ=π/2+2βLmin
d) θ=π+βLmin
Answer: b
Explanation: here, θ is the phase of the
reflection co-efficient. Lmin is the distance
from the load to the first minimum. Since
voltage minima repeat every λ/2, any multiple
of λ/2 can be added to Lmin .
 www.rejinpaul.com

7. In the expression for phase of the reflection Answer: a

coefficient, Lmin stands for :
a) distance between load and first voltage
minimum
b) distance between load and first voltage
maximum
Explanation: ZL=Z0 (1+┌)/ (1-┌).
Substituting the given values of reflection co-
efficient and characteristic impedance, ZL is
47.3+j19.7Ω .

om
c) distance between consecutive minimas 10. If the normalized load impedance of a
d) distance between a minima and immediate transmission line is 2, then the reflection co-
maxima efficient is:
a) 0.33334
Answer: a b) 1.33334
Explanation: Lmin is defined as the distance c) 0

.c
between the terminating load of a d) 1
transmission line and the first voltage
minimum that occurs in the transmission line Answer: a
due to reflection of waves from the load end Explanation: ZL=Z0 (1+┌)/ (1-┌), this is the

ul
due to mismatched termination. expression for load impedance. Normalized
load impedance is the ratio of load impedance
8. If SWR=1.5 with a wavelength of 4 cm and to the characteristic impedance, taking
the distance between load and first minima is
pa ZLL/Z0 as 2, the reflection co-efficient is
1.48cm, then the reflection coefficient is: equal to 0.33334.
a) 0.0126+j0.1996
b) 0.0128
c) 0.26+j0.16 TOPIC 1.10 FRIIS
d) none of the mentioned TRANSMISSION EQUATION
jin
Answer: a
Explanation: ┌= (SWR-1)/ (SWR+1). TOPIC 1.11 LINK BUDGET AND
Substituting for SWR in the above equation LINK MARGIN NOISE
for reflection co-efficient, magnitude of the
.re

reflection co-efficient is 0.2. To find θ,

θ=π+2βLmin, substituting Lmin as 1.48cm,
θ=86.4⁰. Hence converting the polar form of
the reflection co-efficient into rectangular co-
ordinates, reflection co-efficient is
w
1. Link budget consists of calculation of
a) Useful signal power
b) Interfering noise power
c) Useful signal & Interfering noise power
d) None of the mentioned

0.0126+j0.1996.
Answer: c
9. If the characteristic impedance of a
Explanation: The link analysis and its output,
transmission line 50 Ω and reflection the link budget consists of calculations and
w

coefficient is 0.0126+j0.1996, then load tabulations of useful signal power and

impedance is: interfering noise power at the receiver.
a) 47.3+j19.7Ω
w

b) 4.7+j1.97Ω 2. Link budget can help in predicting

c) 0.26+j0.16 a) Equipment weight and size
d) data insufficient b) Technical risk
c) Prime power requirements
d) All of the mentioned

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

Answer: d 6. Mechanism contributing to a reduction in

Explanation: Link budget can help to predict efficiency is called as
equipment weight, size, prime power a) Amplitude tapering
requirements, technical risk and cost. Link b) Blockage
budget is one of the system manager’s useful c) Edge diffraction
document. d) All of the mentioned

3. Which is the primary cost for degradation
of error performance?
a) Loss in signal to noise ratio
b) Signal distortion
c) Signal distortion & Loss in signal to noise
ratio
om
Answer: d
Explanation: Mechanism contributing to a
reduction in efficiency is called as amplitude
tapering, spillover, edge diffraction, blockage,
scattering, re-radiation and dissipative loss.

.c
d) None of the mentioned 7. Space loss occurs due to a decrease in
a) Electric field strength
Answer: c b) Efficiency
Explanation: There are two primary causes c) Phase

ul
for the degradation of error performance. d) Signal power
They are loss in signal to noise ratio and the
second is signal distortion caused by Answer: a
Explanation: Due to the decrease in electric
intersymbol interference.
pa
4. Which factor adds phase noise to the
field strength there will be a decrease in
signal strength as a function of distance. This
signal? is called as space loss.
a) Jitter
b) Phase fluctuations 8. Antenna’s efficiency is given by the ratio
jin
c) Jitter & Phase fluctuations of
d) None of the mentioned a) Effective aperture to physical aperture
b) Physical aperture to effective aperture
Answer: c c) Signal power to noise power
Explanation: When a local oscillator is used d) Losses
.re

in signal mixing, phase fluctuations and jitter

adds phase noise to the signal. Answer: a
Explanation: The larger the antenna aperture
5. Antennas are used the larger is the resulting signal power density
a) As transducer in the desired direction. The ratio of effective
w

b) To focus aperture to physical aperture is the antenna’s

c) As transducer & To focus efficiency.
d) None of the mentioned
9. Effective radiated power of an isotropic
w

Answer: c radiator can be given as a product of

Explanation: Antennas are used as a) Radiated power and received power
transducer that converts electronic signals to b) Effective area and physical area
w

electromagnetic fields and vice versa. They
are also used to focus the electromagnetic
energy in the desired direction.
c) Transmitted power and transmitting gain
d) Receiving power and receiving gain
Answer: c
Explanation: An effective radiated power

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

with respect to an isotropic radiator EIRP can b) Radiation resistance

be defined as the product of transmitted c) Transmission impedance
power and the gain of the transmitting d) Recovery resistance
antenna.
Answer: b
10. According to reciprocity theorem, _____ Explanation: The transmission line is

and _____ are identical.
a) Transmitting power and receiving power
b) Transmitting gain and receiving gain
c) Effective area and physical area
d) None of the mentioned
om
connected at the center. The dipole has an
impedance of 73 V at its center, which is the
radiation resistance. At the resonant
frequency, the antenna appears to be a pure
resistance of 73 V.

Answer: b 3. What happens when the radiation

Explanation: The reciprocity theorem states
that for a given antenna and carrier
wavelength the transmitting and receiving
gain are identical.
.c
resistance of the antenna matches the
characteristic impedance of the transmission
line?
a) No transmission occurs

ul
b) No reception occurs
c) SWR is maximum
pa d) SWR is minimum

UNIT II RADIATION Answer: d

Explanation: When the radiation resistance
MECHANISMS AND of the antenna matches the characteristic
DESIGN ASPECTS impedance of the transmission line, the SWR
is minimum and maximum power reaches the
jin
antenna. This allows maximum power to be
TOPIC 2.1 RADIATION transmitted.
MECHANISMS OF LINEAR
WIRE AND LOOP ANTENNAS 4. The type of dipole antenna that has a
higher band width is called as?
.re

a) Conical antenna
1. A dipole antenna is also called as? b) Yagi antenna
a) Marconi antenna c) Helical antenna
b) Yagi antenna d) Marconi antenna
c) Bidirectional antenna
d) Hertz antenna
w

Answer: a
Explanation: A common way to increase
Answer: d bandwidth in the antenna is to use a version
Explanation: One of the most widely used of the dipole antenna known as the conical
w

antenna types is the half-wave dipole antenna.
This antenna is also formally known as the
Hertz antenna after Heinrich Hertz, who first
demonstrated the existence of
w
antenna. The overall length of the antenna is
0.73λ or 0.73(984)/f = 718.32/f. This is
longer than the traditional one-half

wavelength of a dipole antenna, but the

electromagnetic waves. physical shape changes the necessary
dimensions for resonance.
2. The impedance at the center of the antenna
is known as?
a) Characteristic impedance

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

5. The radiation pattern of a half-wave dipole energy is directed or received. Beam width is
has the shape of a ______ measured on an antenna’s radiation pattern.
a) Doughnut
b) Sphere 8. What is the power radiated by the antenna
c) Hemisphere with gain called as?
d) Circular a) Critical power

om
b) Transverse power
Answer: a c) Effective radiated power
Explanation: The radiation pattern of any d) Transmitted power
antenna is the shape of the electromagnetic
energy radiated from or received by that Answer: c
antenna. Typically that radiation is Explanation: The power radiated by an
concentrated in a pattern that has a antenna with directivity and therefore gain is

recognizable geometric shape. The radiation
pattern of a half-wave dipole has the shape of
a doughnut.
.c
called the effective radiated power (ERP).
The ERP is calculated by multiplying the
transmitter power fed to the antenna Pt by the
power gain Ap of the antenna.

ul
6. What is the beam width for a half wave
dipole antenna? 9. What is the radiation pattern of an isotropic
a) 90° pa radiator?
b) 180° a) Doughnut
c) 50° b) Sphere
d) 250° c) Hemisphere
d) Circular
Answer: a
Explanation: The beam width is measured Answer: b
jin
between the points on the radiation curve that Explanation: An isotropic radiator is a
are 3 dB down from the maximum amplitude theoretical point source of electromagnetic
of the curve. The maximum amplitude of the energy. The E and H fields radiate out in all
pattern occurs at 0° and 180°. The 3-dB down directions from the point source, and at any
points are 70.7 percent of the maximum. The
.re

given distance from the point source, the

angle formed with two lines extending from fields form a sphere.
the center of the curve to these 3-dB points is
the beam width. The beam width is 90°. The 10. What is the impedance of the folded
smaller the beam width angle, the more dipole antenna?
directional the antenna. a) 50Ω
w

b) 100Ω
7. What does the beam width of an antenna c) 300Ω
tell us? d) 20Ω
a) Signal strength
w

b) Signal power Answer: c

c) Directivity Explanation: A popular variation of the half-
d) Degradation wave dipole is the folded dipole. Like the
w

standard dipole, it is one-half wavelength

Answer: c long. However, it consists of two parallel
Explanation: The measure of an antenna’s conductors connected at the ends with one
directivity is beam width, the angle of the side open at the center for connection to the
radiation pattern over which a transmitter’s transmission line. The impedance of this

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

popular antenna is 300 V, making it an 2. The antenna in which location of the feed
excellent match for the widely available 300- determines the direction of the lobe are:
V twin lead. a) Wire antenna
b) Loop antenna
11. Which of the following antennas produce c) Helical antenna
a vertical radiation pattern? d) Horn antenna

om
a) Dipole antenna
b) Yagi antenna Answer: a
c) Marconi antenna Explanation: In a wire antenna, the location
d) Hertz antenna of the feed determines the direction of the
lobe and the orientation of the wire
Answer: c determines the polarization. These wires can
Explanation: The same effect as dipole be thick or thin. Thickness of the wire

.c
antenna can be achieved with a one-quarter determines the radiation resistance of the
wavelength antenna or Marconi antenna. A antenna.
vertical dipole with the doughnut-shaped
radiation pattern, in which one-half of the 3. Based on the size of the loops, loop

ul
pattern is below the surface of the earth. This antennas are classified as small and large
is called a vertical radiation pattern. loops. This is the only classification of loop
pa antenna.
a) True
TOPIC 2.2 APERTURE b) False
ANTENNAS
Answer: b
Explanation: Loop antennas are classified
TOPIC 2.3 REFLECTOR based on various antenna parameters. To
jin
ANTENNAS name a few, small and large loops, circular
and square loops, loops having single or multi
turns, loops with turns wound using a single
TOPIC 2.4 MICROSTRIP wire or multiple wires.
ANTENNAS AND FREQUENCY
.re

INDEPENDENT ANTENNAS 4. Antenna that does not belong to the horn

antenna family among the following are:
a) Pyramidal horn
1. The members of the antenna family which b) Conical horn
are made of wires of certain value in terms of c) bi-conical horn
operating wavelength are called:
w

d) None of the mentioned

a) Loop antennas
b) Wire antennas Answer: d
c) Dipole antenna Explanation: All of the above mentioned
w

d) Slot antennas antennas belong to the horn antenna family.

Horn antennas may be made of pointed or
Answer: c rounded waveguides. The waveguides may
Explanation: Wires of half wavelength are
w

contain disc at an end or some dielectric.

termed as dipoles. Their radiation resistance
is about 73 Ω. If only half of this length is 5. Patch antennas are the antennas of small
used, then it is called quarter-wave monopole size and are made of:
with a radiation resistance of 36.5 Ω. a) Strip line

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

b) Microstrip lines c) Array antennas

c) Coaxial cables d) Slot antennas
d) Rectangular waveguide
Answer: b
Answer: b Explanation: Lens antennas are complex in
Explanation: Patch antennas are microstrip nature but are able to scale wider angles. In

antennas that can be of any shape. Patch
antennas can be aperture-coupled fed or
proximity fed. For obtaining circular
polarization, a patch may also be doubly fed.
6. Reflector antennas are widely used to
modify radiation patterns of radiating
om
comparison to reflectors, their gain is 1 or 2
dB less, but these have more lenient tolerance
on surfaces. These have less rearward
reflection, relatively low loss and can be
easily shaped to the desired contours.
9. Lens antennas are classified into two types.

.c
elements. One being fast antenna, the other one is:
a) True a) Slow antenna
b) False b) Delay antenna
c) Dynamic antenna

Answer: a
Explanation: Reflector antennas are used to
modify radiation patterns of radiating
elements. Reflector antennas are classified
into two categories. They are passive
pa
reflectors and active reflectors. Based on the
type of the radiating element and the
modification in the radiation pattern required,
accordingly either active or passive reflectors
jin
are chosen.
7. The pattern of the reflector in a reflector
antenna is called:
a) Primary pattern
.re
ul
d) None of the mentioned
Answer: b
Explanation: In delay lenses, the electrical
path length is increased or the wave is
retarded by the lens medium. Dielectric
lenses and H-plane metal lenses fall in this
category.
10. The antennas which offer high operational
bandwidth and the antenna parameters are
maintained over a wide range of antennas are
called:
a) Wide band antennas

b) Secondary pattern b) Array antennas

c) Reflector pattern c) Parabolic antennas
d) None of the mentioned d) None of the mentioned

Answer: b Answer: a
w

Explanation: In a reflector antenna, the feed Explanation: In this class of antennas,

pattern is called primary pattern and the constancy of impedance and radiation
pattern of the reflector is called secondary characteristics is maintained over a wide
pattern. These antennas are widely employed range of frequencies. To be wide band or
w

in RADARs and other types of point to point frequency independent, antennas should
communication links. expand or contract in proportion to the
wavelength.
w

8. ______ antennas have gain less than

reflector antennas but have more lenient 11. High directivity required in RADAR
tolerance on surfaces. communication is satisfied using this type of
a) Helical antennas antennas:
b) Lens antennas a) Wide band antennas

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

b) Antenna arrays of a square corner antenna is:

c) Slot antennas a) 0.4 m2
d) Patch antennas b) 0.2 m2
Answer: b c) 0.1 m2
Explanation: Higher directivity is the d) None of the mentioned

requirement in point to point communication.
This can be achieved by increasing the size of
the antennas in terms of electrical length.
When much high directivity is required,
antenna arrays are used.
12. The terminal impedance of a dipole
om
Answer: a
Explanation: Given the directivity of the
antenna, effective aperture of the antenna is
given by Dλ2/4π. substituting the given
values of the variables; the effective aperture
of the antenna is 0.4 m2.

.c
antenna is 710 Ω. The terminal impedance of
the slot antenna given the intrinsic impedance
of air is 377 Ω is: TOPIC 2.5 DESIGN
a) 100 Ω CONSIDERATIONS AND

ul
b) 50 Ω APPLICATIONS.
c) 25 Ω
d) None of the mentioned
1. The basic requirements of transmitting
Answer: b
pa
Explanation: The terminal impedance ZS of
antennas are:
a) High efficiency
b) Low side lobes
the slot is given by the relation Z02/ 4Zd) Zₒ is c) Large signal to noise ratio
the intrinsic impedance of the medium and d) Lone of the mentioned
jin
ZD is the terminal impedance of the dipole.
Substituting the given values in the above Answer: a
equation, the terminal impedance of sot is 50 Explanation: The basic requirements of a
Ω. transmitting antenna are high gain and
efficiency while requirements of receiving
.re

13. If the length of aperture in a pyramidal
horn antenna is 10cm and δ for the design is
0.25. Then, the flaring angle of the pyramidal
horn is:
a) 30⁰
w
antennas are low side lobes and large signal
to noise to ratio.
2. _________ is a device that converts
electrons to photons or vice-versa.
a) Antenna

b) 25.4⁰
c) 45⁰ b) Electron gun
d) 60⁰ c) Photon amplifier
d) Microwave tube
w

Answer: b
Explanation: The flaring angle of pyramidal
horn is given by 2cos-1(L/L+δ). Substituting
w
Answer: a
Explanation: Antenna is a device that
converts electrons into photons or vice versa.

the values of L and δ, flaring angle is 25.4⁰. A transmitting antenna converts electrons into
photons while a receiving antenna converts
14. If the directivity of a square corner
photons into electrons.
receiving antenna is 20 and operating at a
wavelength of 0.25m, the effective aperture

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

3. The basic equation of radiation that is c) Beam width

applied to any antenna irrespective of the type d) None of the mentioned
of the antenna is:
a) iL= Qv Answer: a
b) iQ = Lv Explanation: The beam width of an antenna
c) i/L=Q/v measure at half of the maximum power

d) None of the mentioned
Answer: a
Explanation: Basic equation of radiation is
given by iL=Qv. i is the time change in
current, l is the length of the current element,
q is the charge v is the acceleration of the
om
received by an antenna or the 3 dB beam
width of the antenna is termed as half null
beam width.
7. An antenna has a field pattern of E (θ) =
cos2 θ, θ varies between 0 and 900. Half
power beam width of the antenna is:

.c
charge. a) 330
b) 660
4. When the separation between two lines that
carry the TEM wave approaches λ the wave c) 12000

ul
tends to be radiated. d) None of the mentioned
a) True
Answer: b
b) False
Explanation: Half power beam width of the
Answer: a
pa
Explanation: When the separation between
antenna is obtained by equating the field
pattern of the antenna to 0.707 (half power
two lines that chary the TEM wave point) and finding θ. 2θ gives the value of
approaches λ the wave tends to be radiated so beam width. Solving the given problem in the
that the opened – out line act as an antenna same flow, half power beam width of the
jin
which lunches a free space wave. antenna is 660.

5. The number of patterns radiation pattern 8. An antenna has a field pattern E (θ) =cos θ.
required to specify the characteristic are : cos 2θ. The first null beam width of the
a) Three antenna is:
.re

b) Four a) 450
c) Two b) 900
d) Five
c) 1800
Answer: a d) 1200
w

Explanation: The three patterns required are,

θ component of the electric field as the Answer: b
function of the angles as θ and φ, the φ Explanation: Half power beam width of the
component of the electric field as the function antenna is obtained by equating the field
w

of the angles θ and φ, the phase of these fields pattern of the antenna to 0.707 (half power
as a functions of the angle φ and θ . point) and finding θ. 2θ gives the value of
beam width. Twice the half power beam
w

6. The beam width of the antenna pattern width gives the first null beam width. With
measured at half power points is called: the same steps applied, the half power beam
a) Half power beam width width of the antenna is 450. First null beam
b) Full null beam width width is 900.

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

9. The solid area through which all the power b) Receiving antenna
radiated by the antenna is: c) Radar
a) Beam area d) Mixer
b) Effective area
c) Aperture area Answer: a
d) Beam efficiency Explanation: A transmitting antenna is a

Answer: a
Explanation: The beam area is the solid
angle through which all of the power radiated
by the antenna would stream if P (θ, φ)
maintained its maximum value over beam
area and zero elsewhere. This value is
om
device that converts a guided electromagnetic
wave on a transmission line into a plane wave
propagating in free space. It appears as an
electrical circuit on one side, provides an
interface with a propagating plane wave.
2. Antennas are bidirectional devices.

.c
approximately equal to the angles subtended a) True
by the half power points of the main lobe in b) False
the two principal planes.
Answer: a

10. Power radiated from an antenna per unit
solid angle is called radiation intensity.
a) True
b) False
ul
Explanation: Antennas can be used both as
transmitters and receivers. As transmitters
they radiate energy to free space and as
receivers they receive signal from free space.

Answer: a
pa Hence, they are called bidirectional devices
as they are used at both transmitting end and
Explanation: Power radiated from an antenna receiving end.
per unit solid angle is called radiation
intensity. Unit of radiation intensity is watts 3. Dipole antennas are an example for:
jin
per steridian or per square degree. a) Wire antennas
b) Aperture antennas
c) Array antennas
d) None of the mentioned
.re

UNIT III ANTENNA Answer: a

Explanation: Dipoles, monopoles, oops,
ARRAYS AND Yagi-Uda arrays are all examples for wire
APPLICATIONS antennas. These antennas have low gains, and
are mostly used at lower frequencies.
w

TOPIC 3.1 TWO-ELEMENT 4. _________ antennas consist of a regular

ARRAY arrangement of antenna elements with a feed
network
w

a) Aperture antennas
TOPIC 3.2 ARRAY FACTOR b) Array antennas
c) Printed antennas
w

1. A __________ is a device that converts a d) Wire antennas

guided electromagnetic wave on a
transmission line into a plane wave Answer: b
propagating in free space. Explanation: Array antennas consist of a
a) Transmitting antenna regular arrangement of antenna elements with

Downloaded updated materials from Rejinpaul Network App


a feed network. Pattern characteristics such as
beam pointing angle and side lobe levels can
be controlled by adjusting the amplitude and
phase excitation of array elements.
5. A parabolic reflector used for reception
with the direct broadcast system is 18 inches
in diameter and operates at 12.4 GHz. The
far-field distance for this antenna is:
a) 18 m
b) 13 m
c) 16.4 m
d) 17.3 m
Answer: d
Explanation: Far field distance for a reflector
antenna is given by 2D2/λ. D is the diameter
and λ is the operating signal wavelength.
Substituting in the above expression, far field
distance is 17.3 m. pa
6._________ of an antenna is a plot of the
magnitude of the far field strength versus
position around the antenna.
a) Radiation pattern
b) Directivity
jin
c) Beam width
d) None of the mentioned
Answer: a
.re
Explanation: Radiation pattern of an antenna
is a plot of the magnitude of the far field
strength versus position around the antenna.
This plot gives the detail regarding the region
where most of the energy of antenna is
radiated, side lobes and beam width of an
w
antenna.
7. Antennas having a constant pattern in the
azimuthal plane are called _____________
w
a) High gain antenna
b) Omni directional antenna
c) Unidirectional antenna
w
d) Low gain antenna
Answer: b
Explanation: Omni directional antennas
radiate EM waves in all direction. If the
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
radiation pattern for this type of antenna is
plotted, the pattern is a constant signifying
that the radiated power is constant measured
at any point around the antenna.
8. Beamwidth and directivity are both
om
measures of the focusing ability of an
antenna.
a) True
b) False
Answer: a
Explanation: Beamwidth and directivity are
.c
both measures of the focusing ability of an
antenna. An antenna with a narrow main
beam will have high directivity, while a
pattern with low beam will have low
ul
directivity.
9. If the beam width of an antenna in two
orthogonal planes are 300 and 600. Then the
directivity of the antenna is:
a) 24
b) 18
c) 36
d) 12
Answer: b
Explanation: Given the beam width of the
antenna in 2 planes, the directivity is given by
32400/θ*∅, where θ,∅ are the beam widths in
the two orthogonal planes. Substituting in the
equation, directivity of the antenna is 18.
10. If the power input to an antenna is 100
mW and if the radiated power is measured to
be 90 mW, then the efficiency of the antenna
is:
a) 75 %
b) 80 %
c) 90 %
d) Insufficient data
Answer: c
Explanation: Antenna efficiency is defined
as the ratio of radiated power to the input
power to the antenna. Substituting the given
 www.rejinpaul.com

data in the efficiency equation, the efficiency Answer: a

of the antenna is 90%. Explanation: Long distance communication
requires antenna with high directivity. To
increase the directivity antenna arrays are
TOPIC 3.3 PATTERN used. With the antenna arrays, directivity and
MULTIPLICATION gain increases and beam width decreases.

om
4. Which of the following is false about the
TOPIC 3.4 UNIFORMLY SPACED single antenna for long distance
ARRAYS WITH UNIFORM communication?
a) Enlarging may create side lobes
1. Which of the following is false regarding b) No side lobes
Antenna array? c) High directivity is required

.c
a) Directivity increases d) High Gain is required
b) Directivity decreases
c) Beam width decreases Answer: b
Explanation: High directive antennas are

d) Gain increases
Answer: b
Explanation: A single antenna provides low
pa
gain and less directivity. To increase the
directivity antenna arrays are used. With the
antenna arrays, directivity and gain increases
and beam width decreases.
2. Electrical size of antenna is increased by
jin
which of the following?
a) Antenna Array
b) Decreasing the coverage area
c) Increasing the coverage area
.re
ul
required for the long distance
communications. The array of antennas is
used to increase the directivity. The
directivity can be increased by increasing the
dimensions of antenna but it creates side
lobes.
5. The electrical size of antenna is increased
by antenna array to avoid size lobes
compared to single antenna.
a) True
b) False
Answer: a

d) Using a single antenna

Answer: a
Explanation: To increase the directivity
antenna arrays are used. With the antenna
arrays, directivity and gain increases and
w
Explanation: Increasing the dimensions of
antennas may lead to the appearance of the
side lobes. So by placing a group of antennas
together the electrical size of antenna can be
increased. With the antenna arrays, directivity

beam width decreases. The electrical size of
the antenna is increased by placing an array
antenna together to achieve high directivity.
w
and gain increases and beam width decreases.
6. A uniform linear array contains
_____________

3. For long distance communication, which of a) N elements placed at equidistance and fed
the property is mainly necessary for the currents of equal magnitude and progressive
antenna? phase shift
w

a) High directivity b) N elements at non-equidistance and fed

b) Low directivity currents of equal magnitude and progressive
c) Low gain phase shift
d) Broad beam width c) N elements at equidistance and fed currents
of unequal magnitude and progressive phase

Downloaded updated materials from Rejinpaul Network App


shift
d) N elements at equidistance and fed
currents of unequal magnitude and equal
phase shift
Answer: a
Explanation: An array is said to be linear if
N elements are spaced equally long the line
and is a uniform array if the current is fed
with equal magnitude to all elements and
progressive phase shift along the line. High
directivity can be obtained by antenna array.
7. Total resultant field obtained by the
antenna array is given by which of following?
a) Vector superposition of individual field
from the element
b) Maximum field from individual sources in
the array
c) Minimum field from individual sources in
pa
the array
d) Field from the individual source
Answer: a
Explanation: The total resultant field is
obtained by adding all the fields obtained by
jin
the individual sources in the array. An Array
containing N elements has the resultant field
equal to the vector superposition of individual
field from the elements.
.re
8. If the progressive shift in antenna array is
equal to zero then it is called _________
a) Broad side
b) End-fire
c) Yagi-uda
w
d) Fishbone antenna
Answer: a
Explanation: The total phase difference of
w
the fields is given by Ѱ=kdcosθ+β
Here β is the progressive phase shift
⇨ β=0, array is a uniform broadside array
w
⇨ β=180, array is a uniform end-fire array
Yagi-uda antenna, fishbone antenna are end-
fire antenna array.
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
9. What is the progressive phase shift of the
end-fire array?
a) 0
b) 90
c) 180
d) 60
om
Answer: c
Explanation: The progressive phase shift of
the end-fire array is 180°. It is a linear array
whose direction of radiation is along the axis
of the array. For a broadside array it is 0°.
.c
10. Which of the following statement about
antenna array is false?
a) Field pattern is the product of individual
elements in array
ul
b) Field pattern is the sum of individual
elements in array
c) Resultant field is the vector superposition
of the fields from individual elements in array
d) High directivity can be achieved for long
distance communications
Answer: b
Explanation: The total resultant field is
obtained by adding all the fields obtained by
the individual sources in the array. Radiation
pattern is obtained by multiplying the
individual pattern of the element. Field
pattern is the product of individual elements
in array. Antenna arrays are used to get high
directivity with less side lobes.
TOPIC 3.5 AND NON-UNIFORM
EXCITATION AMPLITUDES
TOPIC 3.6 SMART ANTENNAS.
1. The basic requirements of transmitting
antennas are:
a) High efficiency
b) Low side lobes
c) Large signal to noise ratio
d) Lone of the mentioned
 www.rejinpaul.com

Answer: a 5. The number of patterns radiation pattern

Explanation: The basic requirements of a required to specify the characteristic are :
transmitting antenna are high gain and a) Three
efficiency while requirements of receiving b) Four
antennas are low side lobes and large signal c) Two
to noise to ratio. d) Five

om
2. _________ is a device that converts Answer: a
electrons to photons or vice-versa. Explanation: The three patterns required are,
a) Antenna θ component of the electric field as the
b) Electron gun function of the angles as θ and φ, the φ
c) Photon amplifier component of the electric field as the function
d) Microwave tube of the angles θ and φ, the phase of these fields

Answer: a
Explanation: Antenna is a device that
converts electrons into photons or vice versa.
.c
as a functions of the angle φ and θ .
6. The beam width of the antenna pattern
measured at half power points is called:

ul
A transmitting antenna converts electrons into a) Half power beam width
photons while a receiving antenna converts b) Full null beam width
photons into electrons. pa c) Beam width
d) None of the mentioned
3. The basic equation of radiation that is
applied to any antenna irrespective of the type Answer: a
of the antenna is: Explanation: The beam width of an antenna
a) iL= Qv measure at half of the maximum power
b) iQ = Lv received by an antenna or the 3 dB beam
jin
c) i/L=Q/v width of the antenna is termed as half null
d) None of the mentioned beam width.

Answer: a 7. An antenna has a field pattern of E (θ) =

Explanation: Basic equation of radiation is cos2 θ, θ varies between 0 and 900. Half
.re

given by iL=Qv. i is the time change in power beam width of the antenna is:
current, l is the length of the current element, a) 330
q is the charge v is the acceleration of the
b) 660
charge.
c) 12000
d) None of the mentioned
w

4. When the separation between two lines that

carry the TEM wave approaches λ the wave
tends to be radiated. Answer: b
a) True Explanation: Half power beam width of the
w

b) False antenna is obtained by equating the field

pattern of the antenna to 0.707 (half power
Answer: a point) and finding θ. 2θ gives the value of
beam width. Solving the given problem in the
w

Explanation: When the separation between

two lines that chary the TEM wave same flow, half power beam width of the
approaches λ the wave tends to be radiated so antenna is 660.
that the opened – out line act as an antenna
which lunches a free space wave.

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

8. An antenna has a field pattern E (θ) =cos θ.

cos 2θ. The first null beam width of the
antenna is:
UNIT IV PASSIVE AND
a) 450
b) 900 ACTIVE MICROWAVE
c) 1800 DEVICES

om
d) 1200
TOPIC 4.1 MICROWAVE
Answer: b
Explanation: Half power beam width of the PASSIVE COMPONENTS:
antenna is obtained by equating the field DIRECTIONAL COUPLER,
pattern of the antenna to 0.707 (half power POWER DIVIDER, MAGIC TEE

.c
point) and finding θ. 2θ gives the value of ATTENUATOR, RESONATOR
beam width. Twice the half power beam
width gives the first null beam width. With
the same steps applied, the half power beam 1. _______________ are used in the final

ul
width of the antenna is 450. First null beam stages of radar and radio transmitters to
increase the radiated power level.
width is 900.
a) Power amplifiers
b) Oscillators
radiated by the antenna is:
a) Beam area
pa
9. The solid area through which all the power
c) Transistors
d) Attenuators
b) Effective area
Answer: a
c) Aperture area
Explanation: Power amplifiers are used in
d) Beam efficiency
jin
the final stages of radar and radio transmitters
Answer: a to increase the radiated power level. Output
Explanation: The beam area is the solid of power amplifiers are in the range of 100-
angle through which all of the power radiated 500 mW.
.re

by the antenna would stream if P (θ, φ)

2. Important factors to be considered for
maintained its maximum value over beam
power amplifier design are:
area and zero elsewhere. This value is
a) Efficiency
approximately equal to the angles subtended
b) Gain
by the half power points of the main lobe in
c) Thermal effect
the two principal planes.
d) All of the mentioned
w

10. Power radiated from an antenna per unit

Answer: d
solid angle is called radiation intensity.
Explanation: As per the application
a) True
w

requirement and considering various aspects

b) False
of an amplifier like efficiency, gain, thermal
Answer: a efficiency and inter modulation distortion,
amplifiers need to be designed.
w

Explanation: Power radiated from an antenna

per unit solid angle is called radiation
3. Amplifier efficiency is the ratio of RF
intensity. Unit of radiation intensity is watts
output power to DC input power. This
per steridian or per square degree.
parameter determines the performance of an
amplifier.

Downloaded updated materials from Rejinpaul Network App


a) True
b) False
Answer: a
Explanation: Power amplifier is the primary
consumer of DC power in most hand-held
wireless devices, so amplifier efficiency is an
important consideration. Amplifier efficiency
is the ratio of RF output power to DC input
power.
4. Gain of power amplifiers __________ with
increase in operating frequency.
a) Increases
b) Decreases
c) Increases exponentially
d) Decreases exponentially
Answer: b
Explanation: Silicon bipolar junction
transistor amplifiers in the cellular telephone
band of 800-900 MHz band have power
pa
added efficiencies of about 80%. But this
efficiency drops quickly with increase in the
operating frequency.
jin
5. ___________ amplifiers are linear circuits,
where the transistor is biased to conduct over
the entire range of the input signal cycle.
a) Class A amplifiers
b) Class B amplifiers
.re
c) Class C amplifiers
d) None of the mentioned
Answer: a
Explanation: Class A amplifiers are linear
w
circuits, where the transistor is biased to
conduct over the entire range of the input
signal cycle. Because of this, class A
amplifiers theoretically have a maximum
w
efficiency of 50%.
6. A class B amplifier consists of _______
w
transistors in order to conduct the input signal
over the entire cycle.
a) 1
b) 2
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
c) 4
d) 6
Answer: b
Explanation: Class B amplifier is biased to
conduct only during one-half of the input
om
signal cycle. 2 complementary transistors are
operated in a class B push pull amplifier to
provide amplification over the entire cycle.
7. Power amplifiers in the increasing order of
efficiency is:
a) Class A, B, C
.c
b) Class C, A, B
c) Class B, A, C
d) Efficiency of all the 3 amplifiers is the
same
ul
Answer: a
Explanation: Class A amplifiers have an
efficiency of about 50%. Class B amplifiers
have an efficiency of about 78%, class C
amplifiers can achieve efficiencies up to
100%. In the increasing order of efficiency, C
> B> a)
8. Behavior of a transistor in power amplifiers
is unpredictable at all input signal levels.
a) True
b) False
Answer: b
Explanation: A transistor behaves linearly
for signal powers below 1dB compression
point and so, the small –signal scattering
parameters should not depend either on the
input power level or the output termination
impedance.
9. If the output power of an amplifier is 10 V,
and the input power supplied to the amplifier
is 0.229 V given that the DC voltage used is
38.5 V, efficiency of the power amplifier is:
a) 25%
b) 50%
c) 75%
d) 35%
 www.rejinpaul.com

Answer: a c) it has low conduction band electrons

Explanation: Efficiency of a power amplifier
is (Pout- Pin)/ PDc Substituting the given
values in the above expression, efficiency of
the power amplifier is 25%.
d) less forbidden energy gap
Answer: d
Explanation: In GaAs, the conduction band
lies directly above the top of the valence

om
10. If a power amplifier has an output power band. The lowest energy conduction band in
of 10 W, and an amplifier gain of 16.4 dB, GaAs is called as primary valley. GaAs
then the input drive power is: consists of six secondary valleys. The bottom
a) 400 mW of one of the secondary valley is at an energy
b) 225 mW difference of 0.35 eV with the bottom of the
c) 229 mW primary valley in conduction band.
d) 240 mW

Answer: c
Explanation: Input drive power required to
get an output of 10 W is Pout (dBm)- G (dB).
.c
3. In a GaAs n-type specimen, the current
generated is constant irrespective of the
electric filed applied to the specimen.
a) true

ul
G is the gain of the amplifier. Substituting the b) false
given values in the above equation, 229 mW.
Answer: b
Explanation: In a GaAs n-type specimen,
TOPIC 4.2 PRINCIPLES OF
MICROWAVE
pa when the electric field applied reaches a
threshold value of Eth, the current in the
SEMICONDUCTOR DEVICES: specimen becomes suddenly oscillatory and
GUNN DIODES with respect to time and these oscillations are
in the microwave frequency range. This effect
jin
1. Silicon and germanium are called is called Gunn Effect.
___________ semiconductors.
4. When the electric field applied to GaAs
a) direct gap
specimen is less than the threshold electric
b) indirect gap
.re

field, the current in the material:

c) band gap
a) increases linearly
d) indirect band gap
b) decreases linearly
Answer: b c) increases exponentially
Explanation: The forbidden energy gap for d) decreases exponentially
silicon and germanium are respectively 1.21
w

Answer: a
eV in Si and 0.79 eV in germanium. Silicon
Explanation: When the electric field applied
and germanium are called indirect gap
is less than the threshold value of electric
semiconductors because the bottom of the
field, the electrons jump from the valence
w

conduction band does not lie directly above

the top of the valence band.
2. GaAs is used in the fabrication of GUNN
w
band to the primary valley of the conduction
band and current increases linearly with
electric field.

diodes because:
5. When the applied electric field exceeds the
a) GaAs is cost effective
threshold value, electrons absorb more energy
b) It less temperature sensitive
from the field and become:
a) hot electrons

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

b) cold electrons b) positive resistance

c) emission electrons c) negative voltage
d) none of the mentioned d) none of the mentioned

Answer: a Answer: a
Explanation: When the applied electric field Explanation: When either a voltage or

exceeds the threshold value, electrons absorb
more energy from the field and become hot
electrons. These electrons jump into the
lowest secondary valley in the conduction
band. When the electrons become hot, their
mobility reduces.
om
current is applied to the terminals of a sample
of bulk solid state compound formed by
group 5 and 3 elements of periodic table, a
differential resistance is developed in the bulk
device. This fundamental concept is called
RWH theory.

.c
6. GaAs is used in fabricating Gunn diode. 9. The number of modes of operation for n
Gunn diode is: type GaAs is:
a) bulk device a) two
b) sliced device b) three

ul
c) made of different type of semiconductor c) four
layers d) five
d) none of the mentioned
Answer: c
Answer: a
Explanation: A GUNN diode is a bulk
pa Explanation: n-type GaAs used for
fabricating Gunn diode has four modes of
device, that is, it does not contain any operation. They are Gunn oscillation mode,
junction but it is a slice of n-type GaAs. P- limited space charge accumulation mode, and
type GaAs does not exhibit Gunn Effect. stable amplification mode bias circuit
jin
Hence it is a reversible and can be operated in oscillation mode.
both directions.
10. The free electron concentration in N-type
7. The electrodes of a Gunn diode are made GaAs is controlled by:
of: a) effective doping
.re

a) molybdenum b) bias voltage

b) GaAs c) drive current
c) gold d) none of the mentioned
d) copper
Answer: a
w

Answer: a Explanation: The free electron concentration

Explanation: Gunn diode is grown in n-type GaAs is controlled through effective
epitaxially onto a gold or copper plated doping so that they range from 1014 to 1017
molybdenum electrode, out of gallium per cc at room temperature. The typical
w

arsenide doped with silicon, tellurium or specimen of n-type GaAs has the dimensions
selenium to make it n-type. 150 µm by 150 µm.
w

8. When either a voltage or current is applied
to the terminals of bulk solid state compound
GaAs, a differential ______ is developed in
that bulk device.
a) negative resistance
11. The modes of operation of a Gunn diode
are illustrated in a plot of voltage applied to
the Gunn diode v/s frequency of operation of
Gunn diode.

Downloaded updated materials from Rejinpaul Network App


a) true
b) false
Answer: b
Explanation: A graph of plot of product of
frequency and the length of the device plotted
along y-axis versus the product of doping
concentration and length along X- axis. These
are the parameters on which the four modes
of operation of Gunn diode are explained.
12. The mode of operation in which the Gunn
diode is not stable is:
a) Gunn oscillation mode
b) limited space charge accumulation mode
c) stable amplification mode
d) bias circuit oscillation mode
Answer: a
Explanation: In Gunn oscillation mode, the
device is unstable due to the formation of
pa
accumulation layer and field domain. This
high field domain moves from cathode to
anode.
13. The frequency of oscillation in Gunn
jin
diode is given by:
a) vdom/ Leff
b) Leff/ Vdom
c) Leff/ WVdom
.re
d) none of the mentioned
Answer: a
Explanation: In Gunn oscillation mode, the
frequency of oscillation is given by vdom/
w
Leff, where vdom is the domain velocity, Leff
is effective length that the domain moves
from the time it is formed until the time a new
domain is formed.
w
14. In Gunn diode oscillator, the Gunn diode
is inserted into a waveguide cavity formed by
w
a short circuit termination at one end
a) true
b) false
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
Answer: a
Explanation: The Gunn diode is mounted at
the centre of the broad wall of a shorted
waveguide since for the dominant TE10
mode; the electric field is maximum at the
centre.
om
15. In a Gunn diode oscillator, the electron
drift velocity was found to be 107 cm/second
and the effective length is 20 microns, then
the intrinsic frequency is:
a) 5 GHz
b) 6 GHz
.c
c) 4 GHz
d) 2 GHz
Answer: a
ul
Explanation: The intrinsic frequency for a
Gunn oscillator is given by Vd/L. Here VD is
the drift velocity and L is the effective length.
Substituting the given values in the above
equation, intrinsic frequency is 5 GHz.
TOPIC 4.3 IMPATT DIODES,
SCHOTTKY BARRIER DIODES,
PIN DIODES
1. The material used to fabricate IMPATT
diodes is GaAs since they have the highest
efficiency in all aspects.
a) true
b) false
Answer: b
Explanation: IMPATT diodes can be
fabricated using silicon, germanium, GaAs or
indium phosphide. Out of these materials,
GaAs have highest efficiency, low noise and
high operating frequencies. But GaAs has a
major disadvantage of complex fabrication
process and higher cost. So, GaAs are not
preferred over silicon and germanium.
2. When a reverse bias voltage exceeding the
breakdown voltage is applied to an IMPATT
diode, it results in:
 www.rejinpaul.com

a) avalanche multiplication a) Vd/2l

b) break down of depletion region b) Vd/l
c) high reverse saturation current
c) Vd/2πl
d) none of the mentioned
d) Vdd/4πl
Answer: a

Explanation: A reverse bias voltage
exceeding the breakdown voltage is applied
to an IMPATT diode, a high electric field
appears across the n+ p junction. This high
field imparts sufficient energy to the holes
and also to valence electrons to raise
themselves to the conduction band. This
om
Answer: a
Explanation: The resonant frequency of an
IMPATT diode is given by the expression
Vd/2l. Here VD is the carrier drift velocity; L
is the length of the intrinsic region in the
IMPATT diode.

results in avalanche multiplication of electron
hole pair.
3. To prevent an IMPATT diode from
.c
6. If the length of the intrinsic region in
IMPATT diode is 2 µm and the carrier drift
velocity are 107 cm/s, then the drift time of

ul
the carrier is:
burning, a constant bias source is used to
a) 10-11 seconds
maintain _______ at safe limit.
a) average current b) 2×10-11 seconds
c) 2.5×10-11 seconds
b) average voltage
c) average bias voltage
d) average resistance
pa d) none of the mentioned

Answer: a
Explanation: Avalanche multiplication is a
jin
cumulative process resulting in rapid increase
of carrier density. To prevent the diode from
burning due to this increased carrier density, a
constant bias source is used to maintain
average current at safe limit.
.re
Answer: b
Explanation: The drift time of the carrier is
defined as the ratio of length of the intrinsic
region to the carrier drift velocity.
Substituting the given values in this relation,
the drift time of the carrier is 2×10-11
seconds.

7. If the length of the intrinsic region in

4. The number of semiconductor layers in IMPATT diode is 2 µm and the carrier drift
IMPATT diode is: velocity are 107 cm/s, then the nominal
a) two frequency of the diode is:
b) three a) 12 GHz
w

c) four b) 25 GHz
d) none of the mentioned c) 30 GHz
d) 24 GHz
Answer: c
w

Explanation: IMPATT diode consists of 4 Answer: b

layers according to the construction. It Explanation: Nominal frequency is defined
consists of a p+ region and n+ layers at the as the ratio of the carrier drift velocity to
w

two ends. In between these layers, a p type
layer and an intrinsic region is sandwiched.
5. The resonant frequency of an IMPATT
diode is given by:
twice the length of the intrinsic region.
Substituting the given values in the above
equation, the nominal frequency is 25 GHz.

Downloaded updated materials from Rejinpaul Network App


8. IMPATT diodes employ impact ionization
technique which is a noisy mechanism of
generating charge carriers.
a) true
b) false
Answer: a
Explanation: IMPATT devices employ
impact ionization techniques which is too
noisy. Hence in order to achieve low noise
figure, impact ionization is avoided in
BARITT diodes. The minority injection is
provided by punch through of the
intermediate region.
9. An essential requirement for the BARITT
diode is that the intermediate drift region be
completely filled to cause the punch through
to occur.
a) true
b) false
pa
Answer: b
Explanation: An essential requirement for
the BARITT diode is that the intermediate
drift region be completely filled to cause the
jin
punch through to the emitter-base junction
without causing avalanche breakdown of the
base collector junction.
10. If the RMS peak current in an IMPATT
.re
diode is 700 mA and if DC input power is 6
watt, with the load resistance being equal to
2.5 Ω, the efficiency of the diode is:
a) 10.1 %
b) 10.21 %
w
c) 12 %
d) 15.2 %
Answer: b
w
Explanation: Efficiency of IMPATT diode is
defined as the ratio of output RMS power to
the input DC power. Calculating the RMS
w
output power from the given RMS current
and substituting in the equation of efficiency,
the efficiency is 10.21%.
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
11. If the critical field in a Gunn diode
oscillator is 3.2 KV/cm and effective length is
20 microns, then the critical voltage is:
a) 3.2 V
b) 6.4 V
c) 2.4 V
om
d) 6.5 V
Answer: b
Explanation: Critical voltage of a Gunn
diode oscillator is given by the expression lEc
where l is the effective length and Ec is the
.c
critical field. Substituting the given values in
the above equation, critical voltage is 6.4
volts.
ul
TOPIC 4.4 MICROWAVE TUBES:
KLYSTRON, TWT
MAGNETRON.
1. The production of power at higher
frequencies is much simpler than production
of power at low frequencies.
a) True
b) False
Answer: b
Explanation: As frequency increases to the
millimeter and sub millimeter ranges, it
becomes increasingly more difficult to
produce even moderate power with solid state
devices, so microwave tubes become more
useful at these higher frequencies.
2. Microwave tubes are power sources
themselves at higher frequencies and can be
used independently without any other
devices.
a) True
b) False
Answer: b
Explanation: Microwave tubes are not
actually sources by themselves, but are high
power amplifiers. These tubes are in
conjunction with low power sources and this

combination is referred to as microwave
power module.
3. Microwave tubes are grouped into two
categories depending on the type of:
a) Electron beam field interaction
b) Amplification method
c) Power gain achieved
d) Construction methods
d) None of the mentioned
Answer: a
Explanation: Microwave tubes are grouped
into two categories depending on the type of
electron beam field interaction. They are
linear or ‘O’ beam and crossed field or the m
type tube. Microwave tubes can also be
classified as oscillators and amplifiers.
4. The klystron tube used in a klystron
amplifier is a _________ type beam
amplifier.
a) Linear beam
pa
b) Crossed field
c) Parallel field
d) None of the mentioned
jin
Answer: a
Explanation: In klystron amplifier, the
electron beam passes through two or more
resonant cavities. The first cavity accepts an
.re
RF input and modulates the electron beam by
bunching it into high density and low density
regions.
5. In crossed field tubes, the electron beam
w
traverses the length of the tube and is parallel
to the electric field.
a) True
b) False
w
Answer: b
Explanation: In a crossed field or ‘m’ type
w
tubes, the focusing field is perpendicular to
the accelerating electric field. Since the
focusing field and accelerating fields are
perpendicular to each other, they are called
crossed field tubes.
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
6. ________ is a single cavity klystron tube
that operates as on oscillator by using a
reflector electrode after the cavity.
a) Backward wave oscillator
b) Reflex klystron
c) Travelling wave tube
om
d) Magnetrons
Answer: b
Explanation: Reflex klystron is a single
cavity klystron tube that operates as on
oscillator by using a reflector electrode after
the cavity to provide positive feedback via the
.c
electron beam. It can be tuned by
mechanically adjusting the cavity size.
7. A major disadvantage of klystron amplifier
ul
is:
a) Low power gain
b) Low bandwidth
c) High source power
d) Design complexity
Answer: b
Explanation: Klystron amplifier offers a very
narrow operating bandwidth. This is
overcome in travelling wave tube (TWT).
TWT is a linear beam amplifier that uses an
electron gun and a focusing magnet to
accelerate beam of electrons through an
interaction region.
8. In a _________ oscillator, the RF wave
travels along the helix from the collector
towards the electron gun.
a) Interaction oscillator
b) Backward wave oscillator
c) Magnetrons
d) None o the mentioned
Answer: b
Explanation: In a backward wave oscillator,
the RF wave travels along the helix from the
collector towards the electron gun. Thus the
signal for oscillation is provided by the
bunched electron beam itself and oscillation
occurs.

9. Extended interaction oscillator is a
________ beam oscillator that is similar to
klystron.
a) Linear beam
b) Crossed beam
c) Parallel beam
d) M beam
Answer: a
Explanation: Extended interaction oscillator
is a linear beam oscillator that uses an
interaction region consisting of several
cavities coupled together, with positive
feedback to support oscillation.
10. Magnetrons are microwave devices that
offer very high efficiencies of about 80%.
a) True
b) False
Answer: a
pa
Explanation: Magnetrons are capable of very
high power outputs, on the order of several
kilowatts, and with efficiencies of 80% or
more. But disadvantage of magnetron is that
they are very noisy and cannot maintain
jin
frequency or phase coherence when operated
in pulse mode.
11. Klystron amplifiers have high noise
output as compared to crossed field
.re
amplifiers.
a) True
b) False
Answer: b
w
Explanation: Crossed filed amplifiers have
very good efficiencies – up to 80%, but the
gain is limited to 10-15 db) In addition, the
CFA has a noisier output than either a
w
klystron amplifier or TWT. Its bandwidth can
be up to 40%.
w
12. ____________ is a microwave device in
which the frequency of operation is
determined by the biasing field strength.
a) VTM
b) Gyratron
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
c) Helix BWO
d) None of the mentioned
Answer: b
Explanation: Gyratron is a microwave device
in which the frequency of operation is
om
determined by the biasing field strength and
the electron velocity, as opposed to the
dimensions of the tube itself. This makes the
gyrator especially useful for microwave
frequencies.
.c
UNIT V MICROWAVE
DESIGN PRINCIPLES
ul
TOPIC 5.1 IMPEDANCE
TRANSFORMATION
TOPIC 5.2 IMPEDANCE
MATCHING
1. Slotted line is a transmission line
configuration that allows the sampling of:
a) electric field amplitude of a standing wave
on a terminated line
b) magnetic field amplitude of a standing
wave on a terminated line
c) voltage used for excitation
d) current that is generated by the source
Answer: a
Explanation: Slotted line allows the
sampling of the electric field amplitude of a
standing wave on a terminated line. With this
device, SWR and the distance of the first
voltage minimum from the load can be
measured, from this data, load impedance can
be found.
2. A slotted line can be used to measure
_____ and the distance of _____________
from the load.

a) SWR, first voltage minimum
b) SWR, first voltage maximum
c) characteristic impedance, first voltage
minimum
d) characteristic impedance, first voltage
maximum
Answer: a
Explanation: With a slotted line, SWR and
the distance of the first voltage minimum
from the load can be measured, from this
data, load impedance can be found.
3. A modern device that replaces a slotted
line is:
a) Digital CRO
b) generators
c) network analyzers
d) computers
Answer: c
pa
Explanation: Although slotted lines used to
be the principal way of measuring unknown
impedance at microwave frequencies, they
have largely been superseded by the modern
network analyzer in terms of accuracy,
jin
versatility and convenience.
4. If the standing wave ratio for a
transmission line is 1.4, then the reflection
coefficient for the line is:
.re
a) 0.16667
b) 1.6667
c) 0.01667
d) 0.96
w
Answer: a
Explanation: ┌= (SWR-1)/ (SWR+1).
Substituting for SWR in the above equation
for reflection co-efficient, given SWR is 1.4,
w
reflection co-efficient is 0.16667.
5. If the reflection coefficient of a
w
transmission line is 0.4, then the standing
wave ratio is:
a) 1.3333
b) 2.3333
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
c) 0.4
d) 0.6
Answer: b
Explanation: SWR= (1+┌)/ (1-┌). Where ┌
is the reflection co-efficient. Substituting for
om
the reflection co-efficient in the equation,
SWR is 2.3333.
6. Expression for ϴ means phase angle of the
reflection co efficient r=|r|-e^jθ, the phase of
the reflection co-efficient is:
a) θ=2π+2βLmin
.c
b) θ=π+2βLmin
c) θ=π/2+2βLmin
d) θ=π+βLmin
ul
Answer: b
Explanation: here, θ is the phase of the
reflection co-efficient. Lmin is the distance
from the load to the first minimum. Since
voltage minima repeat every λ/2, any multiple
of λ/2 can be added to Lmin .
7. In the expression for phase of the reflection
coefficient, Lmin stands for :
a) distance between load and first voltage
minimum
b) distance between load and first voltage
maximum
c) distance between consecutive minimas
d) distance between a minima and immediate
maxima
Answer: a
Explanation: Lmin is defined as the distance
between the terminating load of a
transmission line and the first voltage
minimum that occurs in the transmission line
due to reflection of waves from the load end
due to mismatched termination.
8. If SWR=1.5 with a wavelength of 4 cm and
the distance between load and first minima is
1.48cm, then the reflection coefficient is:
a) 0.0126+j0.1996
 www.rejinpaul.com

b) 0.0128
TOPIC 5.3 MICROWAVE FILTER
c) 0.26+j0.16
d) none of the mentioned DESIGN

Answer: a 1. High gain is not achievable at microwave

Explanation: ┌= (SWR-1)/ (SWR+1). frequencies using BJT amplifiers because:

om
Substituting for SWR in the above equation a) device construction
for reflection co-efficient, magnitude of the b) complex architecture
reflection co-efficient is 0.2. To find θ, c) ports are not matched at high frequencies
θ=π+2βLmin, substituting Lmin as 1.48cm, d) none of the mentioned
θ=86.4⁰. Hence converting the polar form of
the reflection co-efficient into rectangular co- Answer: c
ordinates, reflection co-efficient is Explanation: At higher frequencies, if higher

0.0126+j0.1996.
9. If the characteristic impedance of a
.c
bandwidth is desired, a compromise on
maximum achievable gain is made. But at
these higher frequencies, the ports of the
amplifier are not matched to 50 Ω.

ul
transmission line 50 Ω and reflection
coefficient is 0.0126+j0.1996, then load
impedance is: 2. To flatten the gain response of a transistor:
a) 47.3+j19.7Ω pa a) biasing current has to be increased
b) 4.7+j1.97Ω b) input signal level has to increased
c) 0.26+j0.16 c) increase the operational bandwidth
d) data insufficient d) give negative feedback to the amplifier

Answer: a Answer: d
Explanation: ZL=Z0 (1+┌)/ (1-┌). Explanation: Negative feedback can be used
jin
Substituting the given values of reflection co- to increase the gain response of the transistor,
efficient and characteristic impedance, ZL is improve the input and output match, and
increase the stability of the device.
47.3+j19.7Ω .
3. In conventional amplifiers, a flat gain
.re

10. If the normalized load impedance of a response is achieved at the cost of reduced
transmission line is 2, then the reflection co- gain. But this drawback can be overcome by
efficient is: using:
a) 0.33334 a) balanced amplifiers
b) 1.33334 b) distributed amplifiers
c) 0
w

c) differential amplifiers
d) 1 d) none of the mentioned
Answer: a Answer: a
w

Explanation: ZL=Z0 (1+┌)/ (1-┌), this is the Explanation: In conventional amplifiers, a

expression for load impedance. Normalized flat gain response is achieved at the cost of
load impedance is the ratio of load impedance reduced gain. But this drawback can be
w

to the characteristic impedance, taking overcome by using balanced amplifiers. This

ZLL/Z0 as 2, the reflection co-efficient is is overcome by using two 900 couplers to
equal to 0.33334. cancel input and output reflections from two
identical amplifiers.

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

4. Bandwidth of balanced amplifier can be an Answer: b

octave or more, but is limited by the Explanation: In distributed amplifiers,
bandwidth of the coupler. cascade of N identical FETs have their gates
a) true connected to a transmission line having a
b) false characteristic impedance of Zg with a spacing
of lg while the drains are connected to a

Answer: a
Explanation: In order to achieve flat gain
response, balanced amplifiers use couplers to
minimize reflections. But this in turn reduces
the bandwidth of the amplifier to the coupler
bandwidth.
om
transmission line of characteristic impedance
Zd, with a spacing ld.
8. ____________ uses balanced input and
output, meaning that there are 2 signal lines,
with opposite polarity at each port.

.c
5. Coupler that is mostly used in balanced a) differential amplifier
amplifiers to achieve the required b) distributed amplifier
performance is: c) balanced amplifier
a) branch line coupler d) none of the mentioned

ul
b) wilkinson coupler
c) lange coupler Answer: a
d) waveguide coupler Explanation: Differential amplifier uses
balanced input and outputs, meaning that
Answer: c
pa
Explanation: Lange couplers are broadband
there are 2 signal lines, with opposite polarity
at each port. It has two input ports and one
couplers and are compact in size. Since the output port. The difference of the 2 input
bandwidth of a balanced amplifiers depends signals is amplified.
on the bandwidth of the coupler used. Lange
jin
coupler is thus preferred over couplers. 9. A major advantage of differential
amplifiers is:
6. Distributed amplifiers offer very high a) high gain
_________ b) low input impedance
a) gain c) higher output voltage swing
.re

b) bandwidth d) none of the mentioned

c) attenuation
d) none of the mentioned Answer: c
Explanation: Differential amplifiers can
Answer: b provide higher voltage swings that are
approximately double that obtained with
w

Explanation: Distributed amplifiers offer

very high bandwidth of about 10 decade. But single ended amplifier.
higher gain cannot be achieved using
distributed amplifiers and matching at the 10. Along with a differential amplifier, 1800
w

ports is very important to achieve higher hybrid is used both at the input and output.
bandwidth. a) true
b) false
w

7. In distributed amplifiers, all the FET stages

in the amplifier are connected in series to one Answer: a
another. Explanation: A differential amplifier can be
a) true constructed using two single-ended amplifiers
b) false

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

and 1800 hybrids at the input and output to
split and then recombine the signals.
TOPIC 5.4 RF AND
MICROWAVE AMPLIFIER
=0 occurs, it is possible to achieve non zero
output voltage for zero input voltage, thus
forming an oscillator. This is called
Barkhausen criteria.
4. The necessary condition for oscillation in a

om
DESIGN Colpitts oscillator is:
a) C2/C1=gm/Gi
1. _________ is a non linear circuit that b) C1/C2=gm/Gi
converts DC power to an AC waveform of c) C2/C1= gm*Gi
desired frequency based on the oscillator d) None of the mentioned
design.

.c
a) Attenuator Answer: a
b) Amplifier Explanation: The condition for sustained
c) Oscillator oscillation in a Colpitts oscillator is C2/C1 =
d) None of the mentioned gm/Gi. Here C1 and C2 are the capacitance in

Answer: c
Explanation: Oscillator is a non linear circuit
that converts DC power to an AC waveform.
ul
the feedback network, gm is the
transconductance of the transistor and Gi is
the input admittance.

outputs, which minimizes undesired

pa
Most RC oscillators provide sinusoidal
5. Colpitts oscillator operating at 50 MHz has
harmonics and noise sidebands. an inductor in the feedback section of value
0.10µH. then the values of the capacitors in
2. The transfer function of an RF oscillator is the feedback section is:
jin
given by: a) 100 pF, 100 pF
a) A/ (1-AH (ω)) b) 100 pF, 50 pF
b) A/ (1+AH (ω)) c) 70 pF, 130 pF
c) A/ (-1+AH (ω)) d) 80 pF, 60 pF
d) 1/ (1-AH (ω))
.re

Answer: a
Explanation: Transfer function of an RF
oscillator is given by A/ (1-AH (ω)). Here, A
is the gain of the transistor multiplier used.
H(ω) is the function representing the
w
Answer: a
Explanation: The equivalent value of series
combination of the capacitors is given by 1/
ω2L. This gives the equivalent capacitance
value of 200 pF. C1C2/ (C1+C2) =200 pF. C1

and C2 values can be chosen in several ways.

feedback network. In an oscillator, positive
feedback is used. One of the way is C1=C2=100 pF.
w

3. The criterion on which oscillations are 6. The necessary condition for oscillation in a
produced in the oscillator circuit is called: Hartley oscillator is:
a) Shannon’s criteria a) L1/L2 = gm/Gi
b) Barkhausen criteria b) L1/L2 =Gi /gm
w

c) Colpitts criteria c) L2L/L1 = gm/Gi

d) None of the mentioned
d) None of the mentioned
Answer: b
Explanation: When the condition 1-AH (ω)

Downloaded updated materials from Rejinpaul Network App


Answer: a
Explanation: Necessary condition for
oscillation in a Hartley oscillator is L1/L2 =
gm/Gi. Here, L1 and L2 are the inductances in
the feedback network and gm is the
transconductance of the transistor and Gi is
the input admittance.
7. An inductor is operating at frequency of 50
MHz. Its inductance is 0.1 µH, and then the
series resistance associated with the inductor
is: (Qo=100)
a) 0.31 Ω
b) 1.32 Ω
c) 1 Ω
d) 1.561 Ω
Answer: a
Explanation: Series resistance associated
with an inductor is given by ωL/Qₒ.
inductor is given by 0.31.
pa
Substituting in this equation, the series of an
8. Hartley oscillator has inductance values of
12 mH and 4 mH in the feedback section and
jin
a capacitor of 4 nF. Then the resonant
frequency of the circuit is:
a) 19.89 kHz
b) 25 kHz
c) 45 kHz
.re
d) 12 kHz
Answer: a
Explanation: Resonant frequency of Hartley
oscillator is given by 1/ 2π√(C1 (L1 + L2)).
w
Substituting the given values in the above
equation, cut-off frequency is 19.89 kHz.
9. Colpitts oscillator in the feedback section
w
has an inductance of 4 mH and capacitors of
12 nH and 4 nH. Then the resonant frequency
of Colpitts oscillator is:
w
a) 50.4 kHz
b) 35.1 kHz
c) 45.9 kHz
d) None of the mentioned
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
Answer: c
Explanation: Resonant frequency of Colpitts
oscillator is given by 1/2π√LCₒ, where C0 is
the equivalent capacitance given by C1C2/
(C1+C2). Substituting and solving the
om
equation, resonant frequency is 45.9 kHz.
10. For Colpitts oscillator, the capacitors C1
and C2 in the feedback network are 1 µF and
25 µF respectively. Then the β value of the
transistor is:
a) 35
.c
b) 000.76
c) 25
d) 0.0025
ul
Answer: c
Explanation: β for a transistor is defined as
the ratio of transconductance of the transistor
to the input admittance, which is equal to the
ratio of C2/C1. Substituting the given values,
β of the transistor is 25.
TOPIC 5.5 MICROWAVE
POWER AMPLIFIER DESIGN
1. _______________ are used in the final
stages of radar and radio transmitters to
increase the radiated power level.
a) Power amplifiers
b) Oscillators
c) Transistors
d) Attenuators
Answer: a
Explanation: Power amplifiers are used in
the final stages of radar and radio transmitters
to increase the radiated power level. Output
of power amplifiers are in the range of 100-
500 mW.
2. Important factors to be considered for
power amplifier design are:
a) Efficiency
b) Gain

c) Thermal effect
d) All of the mentioned
Answer: d
Explanation: As per the application
requirement and considering various aspects
of an amplifier like efficiency, gain, thermal
efficiency and inter modulation distortion,
amplifiers need to be designed.
3. Amplifier efficiency is the ratio of RF
output power to DC input power. This
parameter determines the performance of an
amplifier.
a) True
b) False
Answer: a
Explanation: Power amplifier is the primary
consumer of DC power in most hand-held
wireless devices, so amplifier efficiency is an
pa
important consideration. Amplifier efficiency
is the ratio of RF output power to DC input
power.
4. Gain of power amplifiers __________ with
jin
increase in operating frequency.
a) Increases
b) Decreases
c) Increases exponentially
d) Decreases exponentially
.re
Answer: b
Explanation: Silicon bipolar junction
transistor amplifiers in the cellular telephone
band of 800-900 MHz band have power
w
added efficiencies of about 80%. But this
efficiency drops quickly with increase in the
operating frequency.
w
5. ___________ amplifiers are linear circuits,
where the transistor is biased to conduct over
the entire range of the input signal cycle.
w
a) Class A amplifiers
b) Class B amplifiers
c) Class C amplifiers
d) None of the mentioned
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
Answer: a
Explanation: Class A amplifiers are linear
circuits, where the transistor is biased to
conduct over the entire range of the input
signal cycle. Because of this, class A
amplifiers theoretically have a maximum
om
efficiency of 50%.
6. A class B amplifier consists of _______
transistors in order to conduct the input signal
over the entire cycle.
a) 1
b) 2
.c
c) 4
d) 6
Answer: b
ul
Explanation: Class B amplifier is biased to
conduct only during one-half of the input
signal cycle. 2 complementary transistors are
operated in a class B push pull amplifier to
provide amplification over the entire cycle.
7. Power amplifiers in the increasing order of
efficiency is:
a) Class A, B, C
b) Class C, A, B
c) Class B, A, C
d) Efficiency of all the 3 amplifiers is the
same
Answer: a
Explanation: Class A amplifiers have an
efficiency of about 50%. Class B amplifiers
have an efficiency of about 78%, class C
amplifiers can achieve efficiencies up to
100%. In the increasing order of efficiency, C
> B> a)
8. Behavior of a transistor in power amplifiers
is unpredictable at all input signal levels.
a) True
b) False
Answer: b
Explanation: A transistor behaves linearly
for signal powers below 1dB compression
point and so, the small –signal scattering
 www.rejinpaul.com

parameters should not depend either on the
input power level or the output termination
impedance.
9. If the output power of an amplifier is 10 V,
and the input power supplied to the amplifier
power, and so is dependent on the signal
power. When noise and a desired signal are
applied to the input of a noise less network,
both noise and signal will be attenuated or
amplified by the same factor, so that the
signal to noise ratio will be unchanged.

om
is 0.229 V given that the DC voltage used is
38.5 V, efficiency of the power amplifier is: 2. __________ is defined as the ratio of input
a) 25% signal to noise ratio to the output signal to
b) 50% noise ratio.
c) 75% a) Noise figure
d) 35% b) Noise temperature
c) SNRo

.c
Answer: a d) None of the mentioned
Explanation: Efficiency of a power amplifier
is (Pout- Pin)/ PDc Substituting the given Answer: a
values in the above expression, efficiency of Explanation: Noise figure is defined as the

ul
the power amplifier is 25%. ratio of input signal to noise ratio to the
output signal to noise ratio of a system or a
10. If a power amplifier has an output power receiver. SNRi is the signal to noise ratio
of 10 W, and an amplifier gain of 16.4 dB,
then the input drive power is:
a) 400 mW
pa measured at the input terminals of the device.
SNR0 is the output signal to noise ratio
measured at the output terminals of the
b) 225 mW
device.
c) 229 mW
d) 240 mW
jin
3. The equivalent noise temperature of a
network given the noise figure of the network
Answer: c
or system is:
Explanation: Input drive power required to
a) T0(F-1)
get an output of 10 W is Pout (dBm)- G (dB).
G is the gain of the amplifier. Substituting the b) T0(F+1)
.re

given values in the above equation, 229 mW. c) T0(F)

d) T0/F
TOPIC 5.6 LOW NOISE
AMPLIFIER DESIGN Answer: a
Explanation: The equivalent noise
w

temperature of a network given the noise

1. ___________ is defined as the ratio of figure of the network or system is given by
desired signal power to undesired noise T0(F-1). In this expression, F is the noise
power.
w

figure of the system. T0 has the value 290 K.

a) Signal to noise ratio
b) Noise to signal ratio T0 is the standard temperature considered.
c) Noise figure
w

d) Noise temperature 4. Noise figure can be defined for any

microwave network irrespective of any other
Answer: a constraints.
Explanation: SNR is defined as the ratio of a) True
desired signal power to undesired noise b) False

Downloaded updated materials from Rejinpaul Network App


Answer: b
Explanation: Noise figure is defined only for
a matched input source and for a noise source
equivalent to a matched load at a temperature
T0= 290 K. noise figure and noise
temperature are interchangeable noise
properties.
5. Expression for noise of a two port network
considering the noise due to transmission line
and other lossy components is:
a) GkTB + GNadded
b) GkTB
c) GNadded
d) None of the mentioned
Answer: a
Explanation: Expression for noise of a two
port network considering the noise due to
transmission line and other lossy components
pa
is GkTB + GNadded. Here, G is the gain of the
system. Nadded is the noise generated by the
transmission line, as if it appeared at the input
terminals of the line.
jin
6. Noise equivalent temperature of a
transmission line that adds noise to the noise
of a device is:
a) T (L-1)
.re
b) T (L+1)
c) T (L)
d) T/L
Answer: a
Explanation: Noise equivalent temperature
w
of a transmission line that adds noise to the
noise of a device is given by T (L-1). Here L
is the loss factor of the line and T is the
temperature at which the system is thermal
w
equilibrium.
7. If the noise figures of the first stage of a
w
two stage cascade network is 8 dB and the
noise figure of the second stage is 7 dB and
the gain of the first stage is 10, then the noise
figure of the cascade is:
a) 8. 6 dB
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
b) 7.6 dB
c) 5.6 dB
d) 8.9 dB
Answer: a
Explanation: Noise figure of a two stage
om
cascade network is given by F1+ (F2-1)/G1.
Here F1, F2 are the noise figure of the first
and the second stage respectively. G1 is the
gain of the first stage. Substituting the given
values in the above equation, noise figure of
the cascade is 8.6 dB.
.c
8. Noise equivalent temperature of a 2 stage
cascade network is given by:
a) Te1 + Te2/ G1
ul
b) Te1 + Te1
c) Te1 / Te1
d) None of the mentioned
Answer: a
Explanation: Noise equivalent temperature
of a 2 stage cascade network is given by Te1
+ Te1/ G1. Here, Te1 is the noise equivalent
temperature of stage 1 and Te1 is the noise
equivalent temperature of stage 2. G1 is the
gain of the first stage of the amplifier.
9. When a network is matched to its external
circuitry, the gain of the two port network is
given by:
a) │S21│2
b) │S22│2
c) │S12│2
d) │S11│2
Answer: a
Explanation: The gain of a two port network
is given by the product of SS21 of the
network and reflection co-efficient at the
source end. But when the two port network is
matched to the external circuitry, reflection
 www.rejinpaul.com

coefficient becomes zero and gain reduces to
│S21│2.
10. For a Wilkinson power divider of
insertion loss L and the coupler is matched to
the external circuitry, and then the gain of the
mismatched amplifier is given by 1+ (F-1)/ (1
-│Г│2). Here F is the noise figure of the
amplifier, when there is an impedance
mismatch at the input of the amplifier; this
impedance mismatch is given by Г.

om
coupler in terms of insertion loss is: TOPIC 5.7 MICROWAVE MIXER
a) 2L
b) 1/2L DESIGN
c) L
d) 1/L 1. One condition to be satisfied in an
oscillator circuit so that stable oscillations are
Answer: b

Explanation: To evaluate the noise figure of
the coupler, third port is terminated with
known impedance. Then the coupler becomes
.c
produced is:
a) positive feedback is to be achieved
b) negative feedback is to be achieved
c) 1800 phase shift is required between the

ul
a two port device. Since the coupler is transistor input and output.
matched, ГS=0 and Гout=S22=0. So the d) none of the mentioned
available gain is │S21│2. This is equal to
Answer: c
1/2L from the available data.

11. Noise equivalent temperature of

pa Explanation: In an oscillator a total of 3600
of phase shift is to be achieved in the entire
Wilkinson coupler having a gain of 1/2L is circuit to produce oscillations. The transistor
given as: used in the oscillator circuit must produce a
a) T (2L-1) phase shift of 1800 to achieve stable
jin
b) T (2L+1) oscillations. Hence this condition has to be
c) T (2L*1) satisfied by the oscillator.
d) T / (2L-1)
2. In an oscillator, the resonant feedback
Answer: a circuit must have must have a low Q in order
.re

Explanation: Noise equivalent temperature to achieve stable oscillation.

of the Wilkinson coupler is found using the a) true
relation b) false
T (1-G21)/G21. Substituting for G21 in the
above expression, equivalent noise Answer: b
w

temperature is T (2L-1). Explanation: If the resonant feedback circuit

has a high Q, so that there is random phase
12. Expression for over all noise figure of a shift with frequency, the oscillator will have
good frequency stability.
w

mismatched amplifier is:

a) 1+ (F-1)/ (1 -│Г│2)
3. Quartz crystals are more efficient as a
b) 1
feedback network because:
c) 1+ (F-1)
w

a) less circuit complexity

d) (F-1)/ (1 -│Г│2) b) cost effective
c) crystals operate at high voltage levels
Answer: a d) LC circuits have unloaded Q of a few
Explanation: The overall noise figure of a hundreds

Downloaded updated materials from Rejinpaul Network App

 www.rejinpaul.com

Answer: d that the crystal is used in place of an inductor

Explanation: At frequencies below a few
hundred MHz, where LC resonators seldom
have unloaded Qs greater than a few hundred.
Quartz crystals have unloaded Q of about
10000 and have a temperature drift of
in a Colpitts or pierce oscillator.
7. In the plot of reactance v/s frequency of a
crystal oscillator, the reactance between series
resonant frequency and parallel resonant

om
0.001%/C0. frequency is:
a) capacitive
4. Quartz crystal and tourmaline used in b) inductive
oscillators work on the principle of: c) both capacitive and inductive
a) photo electric effect d) none of the mentioned
b) piezo electric effect
c) Raman effect Answer: b

.c
d) black body radiation Explanation: In the plot of reactance v/s
frequency of a crystal oscillator, the reactance
Answer: b between series resonant frequency and
parallel resonant frequency is inductive. In

ul
Explanation: Quartz crystals work on the
principle of piezo electric effect. When this region between the series and parallel and
electrical energy is applied to these crystals, series resonant frequencies, the operating
they vibrate in a direction perpendicular to
pa point of the crystal is fixed and hence can be
the application of energy producing used as part of other circuits.
oscillations.
8. In the equivalent circuit of a quartz crystal,
5. A quartz crystals equivalent circuit is a LCR arm has an inductance of 4 mH and
series LCR circuit and has a series resonant capacitor has a value of 4nF, then the series
frequency. resonant frequency of the oscillator is:
jin
a) true a) 0.25 MHz
b) false b) 2.5 MHz
c) 25 MHz
Answer: b d) 5 MHz
.re

Explanation: A quartz crystal has an

equivalent circuit such that a series LCR
network is in parallel with a capacitor. A
quartz crystal thus has both series and parallel
resonant frequencies.
w
Answer: a
Explanation: The series resonant frequency
of a crystal oscillator is given by 1/√LC.
Substituting the given values of L and C in
the expression, the series resonant frequency

6. Quartz crystal is used in the is 0.25 MHz.

_______region, where the operating point of
the crystal is fixed. 9. Parallel resonant frequency of quartz
a) resistive crystal is given by:
w

b) inductive reactance a) 1/ √(LCₒC/(Cₒ+C))

c) capacitive reactance b) 1/√LC
d) none of the mentioned c) 1/√LCₒ
w

Answer: b
Explanation: Quartz crystal is always
operated in the inductive reactance region so
d) 1/ √(L(Cₒ+C) )
Answer: a
Explanation: Parallel resonant frequency of
an oscillator is given by√(LCₒC/(Cₒ+C)).

Downloaded updated materials from Rejinpaul Network App


Here L and C are the inductance and
capacitance in the LCR arm of the equivalent
circuit of the crystal. Co is the capacitance
existing in parallel to this LCR arm.
10. The equivalent circuit of a quartz crystal
has LCR arm capacitance of 12nF and
inductance of 3mH and parallel arm
capacitance of 4nF. Parallel resonant
frequency for the circuit is:
a) 3 MHz
b) 0.3 MHz
c) 6 MHz
d) 9 MHz
Answer: a
Explanation: The parallel resonant frequency
of a crystal oscillator is given by 1/
√(LCₒC/(Cₒ+C)). Substituting the given
values in the equation, the parallel resonant
pa
frequency is found to be 3 MHz.
TOPIC 5.8 MICROWAVE
OSCILLATOR DESIGN
jin
1. In microwave oscillators, negative
resistance transistors and diodes are used in
order to generate oscillations in the circuit.
a) True
.re
b) False
Answer: a
Explanation: In microwave oscillator, for a
current to flow in the circuit the negative
impedance of the device must be matched
w
with positive impedance. This results in
current being non-zero and generates
oscillation.
w
2. Any device with negative impedance as its
characteristic property can be called:
a) Energy source
w
b) Energy sink
c) Oscillator
d) None of the mentioned
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
Answer: a
Explanation: A positive resistance implies
energy dissipation while a negative resistance
implies an energy source. The negative
resistance device used in the microwave
oscillator, thus acts as a source. The condition
om
Xin+ XL=0 controls the frequency of
oscillation. Xin is the impedance of the
negative resistance device.
3. In a microwave oscillator, a load of 50+50j
is connected across a negative resistance
.c
device of impedance -50-50j. Steady state
oscillation is not achieved in the oscillator.
a) True
b) False
ul
Answer: b
Explanation: The condition for steady state
oscillation in a microwave oscillator is Zin=-
ZL. Since this condition is satisfied in the
above case, steady state oscillation is
achieved.
4. For achieving steady state oscillation, the
condition to be satisfied in terms of reflection
coefficients is:
a) Гin=ГL
b) Гin=-ГL
c) Гin=1/ГL
d) None of the mentioned
Answer: c
Explanation: The condition for steady state
oscillation to be achieved in terms of
reflection coefficient is Гin=1/ГL. Here Гin is
the reflection coefficient towards the
reflection coefficient device and ГL is the
reflection coefficient towards the load.
5. A one port oscillator uses a negative
resistance diode having Гin=0.9575+j0.8034
(Z0=50Ω) at its desired frequency point. Then
the input impedance of the diode is:
a) -44+j123
b) 50+j100

c) -44+j145
d) None of the mentioned
Answer: a
Explanation: The input impedance of the
diode given reflection coefficient and
characteristic impedance is Z0 (1+Гin)/ (1-
Гin). Substituting in the given equation, the
input impedance is -44 +j123 Ω.
6. If the input impedance of a diode used in
the microwave oscillator is 45-j23 Ω, then the
load impedance is to achieve stable
oscillation is:
a) 45-j23 Ω
b) -45+j23 Ω
c) 50 Ω
d) 23-j45 Ω
Answer: b
pa
Explanation: The condition for stabilized
oscillation is Zin=-ZL. According to this
equation, the load impedance required for
stabilized oscillation is – (45-j23) Ω. The load
impedance is thus -45+j23 Ω.
jin
7. To achieve stable oscillation, Zin + ZL=0 is
the only necessary and sufficient condition to
be satisfied by the microwave oscillator.
a) True
.re
b) False
Answer: b
Explanation: The condition Zin + ZL=0 is
only a necessary condition for stable
w
oscillation and not sufficient. Stability
requires that any perturbation in current or
frequency is damped out, allowing the
oscillator to return to its original state.
w
w
Downloaded updated materials from Rejinpaul Network App
www.rejinpaul.com
8. In transistor oscillators, the requirement of
a negative resistance device is satisfied using
a varactor diode.
a) True
b) False
om
Answer: b
Explanation: In a transistor oscillator, a
negative resistance one port network is
created by terminating a potentially unstable
transistor with impedance designed to drive
the device in an unstable region.
.c
9. In transistor oscillators, FET and BJT are
used. Instability is achieved by:
a) Giving a negative feedback
b) Giving a positive feedback
ul
c) Using a tank circuit
d) None of the mentioned
Answer: b
Explanation: Oscillators require a device that
has high instability. To achieve this condition,
transistors are used with a positive feedback
to increase instability.
10. In a transistor amplifier, if the input
impedance is -84-j1.9 Ω, then the terminating
impedance required to create enough
instability is:
a) -84-j1.9 Ω
b) 28+j1.9 Ω
c) – (28+j1.9) Ω
d) None of the mentioned
Answer: b
Explanation: Relation between terminating
impedance and input impedance is Zs=-Rin/3.
Zs is the terminating impedance. Substituting
in the given equation, the terminated
impedance is 28+j1.9 Ω.