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S72Xs-R Based MCPS: Mirrorbit Flash Memory and Dram
S72Xs-R Based MCPS: Mirrorbit Flash Memory and Dram
Notice to Readers: This document states the current technical specifications regarding the Spansion
product(s) described herein. Each product described herein may be designated as Advance Information,
Preliminary, or Full Production. See Notice On Data Sheet Designations for definitions.
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“This document contains information on one or more products under development at Spansion Inc.
The information is intended to help you evaluate this product. Do not design in this product without
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Combination
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Characteristics table and the AC Erase and Program table (in the table notes). The disclaimer on the first
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Questions regarding these document designations may be directed to your local sales office.
Features
Power supply voltage of 1.7 V to 1.95 V Packages
Burst Speeds – 8.0 x 8.0 mm, 133-ball MCP
– Flash = 83 MHz or 108 MHz Operating Temperature of –25°C to +85°
– DDR DRAM = 166 MHz
General Description
This document contains information on the S72XS-R MCP stacked products. Refer to the S29VS/XS-R data sheet
(S29VS_XS-R_00) for full electrical specifications of the Flash memory component.
The S72XS Series is a product line of stacked products (MCPs), and consists of:
S29XS family Address-High, Address-Low, Data Multiplexed Flash memory die
DDR DRAM
The products covered by this document are listed in the tables below.
DRAM Density
Flash Density 128 Mb 256 Mb
128 Mb S72XS128RD0
256 Mb S72XS256RE0
Note:
1.Products using this DRAM are not recommended for new designs.
Note:
1. This OPN is not recommended for new designs.
F -R S T# RS T# A DQ 1 5 - A DQ 0 A D Q 15-A D Q 0
A ma x - A 1 6 ( No Co n n e c t)
F -V P P V PP CL K F -C LK
NOR RDY F -R D Y
F -C E #
F -O E #
CE#
O E#
FLASH
F -W E # W E# X S -R
F -A V D # A V D#
(A A D M )
V CC F -V C C
V CCQ F -V C C Q
V SS VSS
V SSQ
D -R A S # RA S # CK D -C LK
D -C A S # CA S # CK # D -C LK #
D -B A 0 BA 0 L DQ S D -LD Q S
D -B A 1 BA 1 DDR UDQ S D -U D Q S
D -C K E D -LD Q M
D -W E #
CK E
W E#
DRAM L DM
UDM D -U D Q M
D -C E # CS # M EM ORY
D -A m ax - D -A 0 A ma x - A 0 DQ 1 5 - DQ 0 D -D Q 15 - D -D Q 0
D -V C C V DD V SS VSS
D -V C C Q V DDQ V SSQ
Notes:
1. Amax indicates highest address bit for memory component:
a. Amax = A11 for 128 Mb DDR DRAM, A12 for 256 Mb DDR DRAM.
2. For Flash, A15 - A0 is tied to DQ15 - DQ0.
4. Connection Diagrams
Figure 4.1 133-ball Fine-Pitch Ball Grid Array MCP
1 2 3 4 5 6 7 8 9 10 11 12 13 14 Legend
A
DNU DNU VSS D-VCCQ D-DQ9 D-DQ8 VSS D-VCC D-VCC D-DQ5 D-DQ3 VSS DNU DNU Index Location
B
DNU VSS D-DQ13 D-UDQS D-DQ10 VSS D-VCCQ D-VCCQ D-LDQM D-DQ6 D-DQ4 D-DQ1 D-VCCQ DNU Do Not Use
C
D-VCC D-DQ15 D-DQ14 D-DQ12 D-DQ11 D-UDQM VSS D-VCC VSS D-DQ7 D-LDQS D-DQ2 D-DQ0 VSS
No Connect
D
RFU NC NC INDEX F-OE# ADQ8 D-VCC
DRAM Only
E
RFU RFU RFU ADQ9 ADQ1 ADQ0
H VSS
F-VPP F-VCC F-CLK ADQ13 ADQ12 ADQ4
J
RFU VSS NC VSS VSS ADQ5
K
RFU F-AVD# NC NC ADQ7 ADQ6
L
RFU F-RST# D-CE# F-VCCQ ADQ15 ADQ14
M
NC RFU D-A3 D-A6 D-A9 D-CKE VSS D-WE# D-A10 D-A1 RFU RFU F-RDY VSS
N
DNU VSS D-VCC D-A5 D-A8 D-CAS# D-CLK# D-BA1 D-A11 D-A2 D-A12 RFU F-VCC DNU
P
DNU DNU NC D-A4 D-A7 D-RAS# D-CLK D-VCC D-BA0 D-A0 D-VCC VSS DNU DNU
5. Input/Output Descriptions
Symbol Description Flash RAM
ADQ15 – ADQ0 Flash multiplexed Address and Data X
F-CE# Flash Chip-enable input. X
F-OE# Flash Output Enable input. Asynchronous relative to CLK for Burst mode. X
F-WE# Flash Write Enable input X
F-VCC Flash device power supply (1.7 V to 1.95 V) X
F-VCCQ Flash Input/Output Buffer power supply X
VSS Ground X X
Flash ready output. Indicates the status of the Burst read. VOL = data invalid. VOH = data
F-RDY X
valid.
Flash Clock. The first rising edge of CLK in conjunction with AVD# low latches the address
input and activates burst mode operation. After the initial word is output, subsequent rising
F-CLK X
edges of CLK increment the internal address counter. CLK should remain low during
asynchronous access.
Flash Address Valid input. Indicates to device that the valid address is present on the
address inputs. VIL = for asynchronous mode, indicates valid address; for burst mode,
F-AVD# X
causes starting address to be latched on rising edge of CLK. VIH= device ignores address
inputs
F-RST# Flash hardware reset input. VIL= device resets and returns to reading array data X
Flash accelerated input. At VHH, accelerates programming; automatically places device in
F-VPP unlock bypass mode. At VIL, disables all program and erase functions. Should be at VIH for X
all other conditions.
D-Amax – D-A0 DRAM Address inputs. X
D-DQ15 – D-DQ0 DRAM Data input/output X
D-CLK DRAM System Clock X
D-CE# DRAM Chip Select X
D-CKE DRAM Clock Enable X
D-BA1 – BA0 DRAM Bank Select X
D-RAS# DRAM Row Address Strobe X
D-CAS# DRAM Column Address Strobe X
D-UDQM – D-LDQM DRAM Data Input Mask X
D-WE# DRAM Write Enable input X
D-VCCQ DRAM Input/Output Buffer power supply X
D-VCC DRAM device power supply X
D-UDQS DRAM Upper Data Strobe, output with read data and input with write data X
D-LDQS DRAM Lower Data Strobe, output with read data and input with write data X
D-CLK# DDR Clock for negative edge of CLK X
Reserved for Future Use. No device internal signal is currently connected to the package
connector but there is potential future use for the connector for a signal. It is recommended
RFU
to not use RFU connectors for PCB routing channels so that the PCB may take advantage
of future enhanced features in compatible footprint devices.
Not Connected. No device internal signal is connected to the package connector nor is
NC there any future plan to use the connector for a signal. The connection may safely be used
for routing space for a signal on a Printed Circuit Board (PCB).
Do Not Use. A device internal signal may be connected to the package connector. The
connection may be used by Spansion for test or other purposes and is not intended for
connection to any host system signal. Any DNU signal related function will be inactive when
DNU
the signal is at VIL. The signal has an internal pull-down resistor and may be left
unconnected in the host system or may be tied to VSS. Do not use these connections for
PCB signal routing channels. Do not connect any host system signal to these connections.
6. Ordering Information
The order number (Valid Combination) is formed by the following:
S72XS 128 R D0 AH B H E 3
PACKING TYPE
0 = Tray
3 = 13-inch Tape and Reel
PACKAGE MODIFIER
B = 133-ball, 8x8 mm, FBGA MCP
PROCESS TECHNOLOGY
R = 65 nm, MirrorBit® Technology
PRODUCT FAMILY
S72XS Multi-Chip Product (MCP)
1.8 V Address-High, Address-Low, Data Multiplexed, SRW, Burst Mode Flash and DDR
DRAM on Split Bus
Valid Combinations
Flash and
Product Code Flash Process DDR Density Package Type/ RAM Bus and DDR Speed,
Family Density (Mb) Technology (Mb) Material Flash Boot DDR Vendor Packing Type
128 D0 E, 6 (Note 4)
S72XS R AHB H 0, 3 (Note 1)
256 E0 1
Notes:
1. Packing Type 0 is standard. Specify other options as required.
2. BGA package marking omits leading “S” and packing type designator from ordering part number.
3. Valid Combinations list configurations planned to be supported in volume for this device. Consult your local sales office to confirm
availability of specific valid combinations and to check on newly released combinations.
4. Flash and DDR Speed/Vendor combination '6' is not recommended for new designs.
7. Physical Dimensions
8. Revision History
Section Description
Revision 01 (October 7, 2008)
Initial release
Revision 02 (January 13, 2009)
Global Added section Electronic Serial Number
Revision 03 (December 18, 2009)
Global Added SDM128D166D1K OPN
Figure: Updated D-VSS and D-VSSQ connections
Product Block Diagram
Removed D-TEST signal
Physical Dimensions Updated with RSC133
Revision 04 (February 1, 2010)
Connection Diagrams Updated figure: changed Ball A2 with DNU
Revision 05 (August 19, 2010)
Global Updated references for Low Power DDR SDRAM to SDM128D166D1R
DDR Specification Reference Added reference for 256 Mb DDR DRAM
Added “not recommended for new designs” note to OPN S72XS128RD0AHBH60
Product Selector Guide Added OPN S72XS256RE0AHBH1
Removed OPN S72XS256RD0AHBHE
Updated block diagram to show common Ground
Product Block Diagram
Updated Note 1b
Updated connection diagram to show common Ground
Updated to show D-A12
Connection Diagrams
Added table to show D-Amax value for related MCP
Balls F1, M2 and M12 changed from NC to RFU
Replaced F-VSS, D-VSS, D-VSSQ with VSS
Input/Output Descriptions Corrected F-ACC to F-VPP
Refreshed descriptions for DNU, NC, RFU
Ordering Information/Valid
Updated for new OPN S72XS256RE0AHBH1
Combinations
Colophon
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