TCE 2101 Ass 1 2021: Due date 08/02/21

Q1 [25]
With the aid of a well labelled process flow sheet or diagram explain any industrial molecular
diffusion process on mass transfer operation of your choice.
Q2 [25]
In the chemical vapor deposition of silane (SiH4) on a silicon wafer, a process gas stream rich in an
inert nitrogen (N2) carrier gas has the following composition:
y Si H =0.0075 , y H =0.015, y N =0.9775
4 2 2

The gas mixture is maintained at 900 K and 100 Pa total system pressure. Determine the diffusivity of
εA
silane through the gas mixture. The Lennard–Jones constants for silane are =207 K and
K
σ A =4.08 Å . Use Hirschfelder equation to estimate the binary diffusion coefficients at 900 K and 100
Pa total system pressure and Wilke equation to estimate the diffusivity of silane through the gas
mixture.