Hardware

Documentation

Ad va n ce I n fo r m ati o n

®
HAL 15xy
Hall-Effect Sensor Switch Familiy

Edition Dec. 11, 2014

AI000175_003EN
HAL 15xy ADVANCE INFORMATION

Copyright, Warranty, and Limitation of Liability Micronas Trademarks

– HAL
The information and data contained in this document
are believed to be accurate and reliable. The software
and proprietary information contained therein may be
Third-Party Trademarks
protected by copyright, patent, trademark and/or other
intellectual property rights of Micronas. All rights not
All other brand and product names or company names
expressly granted remain reserved by Micronas.
may be trademarks of their respective companies.
Micronas assumes no liability for errors and gives no
warranty representation or guarantee regarding the
suitability of its products for any particular purpose due
to these specifications.

By this publication, Micronas does not assume respon-

sibility for patent infringements or other rights of third
parties which may result from its use. Commercial con-
ditions, product availability and delivery are exclusively
subject to the respective order confirmation.

Any information and data which may be provided in the

document can and do vary in different applications,
and actual performance may vary over time.

All operating parameters must be validated for each

customer application by customers’ technical experts.
Any new issue of this document invalidates previous
issues. Micronas reserves the right to review this docu-
ment and to make changes to the document’s content
at any time without obligation to notify any person or
entity of such revision or changes. For further advice
please contact us directly.

Do not use our products in life-supporting systems,

military, aviation, or aerospace applications! Unless
explicitly agreed to otherwise in writing between the
parties, Micronas’ products are not designed, intended
or authorized for use as components in systems
intended for surgical implants into the body, or other
applications intended to support or sustain life, or for
any other application in which the failure of the product
could create a situation where personal injury or death
could occur.

No part of this publication may be reproduced, photo-

copied, stored on a retrieval system or transmitted
without the express written consent of Micronas.

2 Dec. 11, 2014; AI000175_003EN Micronas

HAL 15xy ADVANCE INFORMATION

Contents

Page Section Title

4 1. Introduction
4 1.1. Features
5 1.2. HAL 15xy Families Overview

8 2. Ordering Information
8 2.1. Device-Specific Ordering Codes

9 3. Functional Description
9 3.1. Functional Safety According to ISO 26262
9 3.1.1. Diagnostic Features
10 3.2. Power-On Self-Test (3-wire)

12 4. Specifications
12 4.1. Outline Dimensions
13 4.2. Soldering, Welding and Assembly
13 4.3. Pin Connections and Short Descriptions
13 4.4. Dimension of Sensitive Area
13 4.4.1. Position of Sensitive Area
14 4.5. Absolute Maximum Ratings
15 4.6. Storage and Solderability
15 4.7. ESD and Latch-up
15 4.8. Recommended Operating Conditions
16 4.9. Characteristics
17 4.10. Magnetic Characteristics Overview
18 4.10.1. HAL 15xy Magnetic Characteristics

19 5. Application Notes
19 5.1. Application Circuit
19 5.1.1. 3-Wire Devices
19 5.1.2. 2-Wire Devices
20 5.1.3. ESD System Level Application Circuit (ISO10605-2008)
21 5.2. Ambient Temperature
21 5.3. Start-Up Behavior
21 5.4. EMC and ESD

22 6. Data Sheet History

3 Dec. 11, 2014; AI000175_003EN Micronas

HAL 15xy
Hall-Effect Switch Families
Release Note: Revision bars indicate significant
changes to the previous edition.
1. Introduction
The HAL 15xy family consists of different Hall switches
produced in CMOS technology. All sensors include a
temperature-compensated Hall plate with active offset
compensation, a comparator, and an output stage.
The family consists of 3-wire and 2-wire devices, the
corresponding output stage being an open-drain out-
put transistor and a current source respectively.
The comparator compares the actual magnetic flux
through the Hall plate (Hall voltage) with the fixed ref-
erence values (switching points). Accordingly the out-
put transistor is switched on or off in 3-wire versions,
and the current source is switched on (high current
consumption) or off (low current consumption) in 2-
wire versions.
The active offset compensation leads to constant mag-
netic characteristics over supply voltage and tempera-
ture range. In addition, the magnetic parameters are
robust against mechanical stress effects.
The sensors are designed for industrial and automo-
tive applications and operate with supply voltages from
2.7 V (3-wire) or 3 V (2-wire) to 24 V in junction tem-
perature range from40 C up to 170 C.
HAL 15xy is available in SMD-package SOT23-3L
JEDEC TO236-Compliant.
4 Dec. 11, 2014; AI000175_003EN
ADVANCE INFORMATION
1.1. Features
– Tiny SOT23-3L JEDEC TO236-Compliant package
– ISO 26262 compliant as ASIL-A ready device
– Very low current consumption of typ. 1.6 mA
– Operates from 2.7 V to 24 V supply voltage
– Overvoltage protection capability up to 40 V
– Highest ESD performance of ±8 kV
– Power-on self test toggles the output: Activation can
be triggered by the host
– Short-circuit protected open-drain output and ther-
mal shut down for 3-wire applications
– Current output for 2-wire applications
– Maximum sample frequency at 500 kHz, 2 µs output
refresh time
– Operates with static and dynamic magnetic fields up
to 12 kHz at lowest output jitter of typ. 0.58 µs
(RMS).
– Magnetic characteristics are robust regarding
mechanical stress effects
– Constant switching points over a wide supply volt-
age and temperature range
– Wide junction temperature range from 40 °C to
170 °C
– The decrease of magnetic flux density caused by
rising temperature in the sensor system is compen-
sated by a built-in negative temperature coefficient
of the magnetic characteristics
– Reverse-voltage protection at VSUP-pin
– Ideal sensor for applications in extreme automotive
and industrial environments
– Qualified according to AEC-Q100 test standard for
automotive electronics industry to provide the high-
est quality performance
– Robust EMC performances, corresponding to differ-
ent standards, such as ISO 7637, ISO 16750,
IEC 61967, ISO 11452 and ISO 62132
Micronas
ADVANCE INFORMATION HAL 15xy

1.2. HAL 15xy Families Overview

HAL 15xy features higher switching point accuracy

than family HAL 15xy. The types within each family dif-
fer according to the magnetic flux density values for
the magnetic switching points, the temperature behav-
ior of the magnetic switching points, the mode of
switching, the number of pins and the average current
consumption. Table 1–1 to Table 1–2 list some devices
classified in terms of switching behavior and sensitiv-
ity: higher sensitivity correlates to lower switching
points.

Table 1–1: HAL 15xy 3-wire devices (see page 18)

Type Switching Behavior Sensitivity

1501 bipolar very high
1502 latching very high
1503 unipolar high
1506 unipolar medium
1507 unipolar low
1508 unipolar high
1509 unipolar inverted high

Table 1–2: HAL 15xy 2-wire devices (see page 18)

Type Switching Behavior Sensitivity

1562 latching medium
1563 unipolar inverted high
1564 unipolar inverted high
1565 unipolar high
1566 unipolar high

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HAL 15xy ADVANCE INFORMATION

The following definitions outline the device behavior for Bipolar Switching Sensors (3-wire only):
different switching points:
The output turns low with the magnetic south pole on
the branded side of the package and turns high with
Latching Sensors: the magnetic north pole on the branded side. The out-
put state is not defined if the magnetic field is removed
3-wire: The output turns low with the magnetic south again. Some sensors will change the output state and
pole on the branded side of the package and turns some sensors will not.
high with the magnetic north pole on the branded side.
The output does not change if the magnetic field is
removed. For changing the output state, the opposite Output Voltage
magnetic field polarity must be applied.
VO
BHYS
Output Voltage
VO
VOL
BHYS
BOFF 0 BON B

VOL Fig. 1–3: Definition of magnetic switching points for 3-

wire bipolar sensor.
B
BOFF 0 BON

Fig. 1–1: Definition of magnetic switching points for 3-

wire latching sensor.

2-wire: The sensor turns to high current consumption

with the magnetic south pole on the branded side of
the package and turns to low consumption with the
magnetic north pole on the branded side. The current
consumption does not change if the magnetic field is
removed. For changing the current consumption, the
opposite magnetic field polarity must be applied.

Fig. 1–2: Definition of magnetic switching points for 2-

wire latching sensor.

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ADVANCE INFORMATION HAL 15xy

Unipolar Switching Sensors: Unipolar Switching Sensors with Inverted Output:

3-wire: The output turns low with the magnetic south

pole on the branded side of the package and turns
high if the magnetic field is removed. The sensor does
not respond to the magnetic north pole on the branded
side.
3-wire: The output turns high with the magnetic south
pole on the branded side of the package and turns low
if the magnetic field is removed. The sensor does not
respond to the magnetic north pole on the branded
side.

Output Voltage
Output Voltage
VO
VO
BHYS
BHYS

VOL
VOL
0 BOFF BON B
0 BON BOFF B
Fig. 1–4: Definition of magnetic switching points for 3-
wire unipolar sensor. Fig. 1–6: Definition of magnetic switching points for 3-
wire unipolar sensor with inverted output.

2-wire: The sensor turns to high current consumption

with the magnetic south pole on the branded side of
the package and turns to low consumption if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.
2-wire: The sensor turns to low current consumption
with the magnetic south pole on the branded side of
the package and turns to high consumption if the mag-
netic field is removed. The sensor does not respond to
the magnetic north pole on the branded side.

Fig. 1–5: Definition of magnetic switching points for 2-

wire unipolar sensor. Fig. 1–7: Definition of magnetic switching points for 2-
wire unipolar sensor with inverted output.

Micronas Dec. 11, 2014; AI000175_003EN 7

HAL 15xy ADVANCE INFORMATION

2. Ordering Information 2.1. Device-Specific Ordering Codes

A Micronas device is available in a variety of delivery HAL 15xy is available in the following package and
forms. They are distinguished by a specific ordering temperature variants.
code:
Table 2–1: Available packages

XXX NNNN PA-T-C-P-Q-SP

Package Code (PA) Package Type

Further Code Elements SU SOT23

Temperature Range
Package
Table 2–2: Available temperature ranges
Product Type
Product Group
Temperature Code (T) Temperature Range

Fig. 2–1: Ordering Code Principle A TJ = 40 °C to +170 °C

For a detailed information, please refer to the brochure:

“Hall Sensors: Ordering Codes, Packaging, Handling”. The relationship between ambient temperature (TA)
and junction temperature (TJ) is explained in
Section 5.2. on page 21.

For available variants for Configuration (C), Packaging

(P), Quantity (Q), and Special Procedure (SP) please
contact Micronas.

Table 2–3: Available ordering codes and

corresponding package marking

Available Ordering Codes Package Marking

HAL1501SU-A-[C-P-Q-SP] 1501A

HAL1502SU-A-[C-P-Q-SP] 1502A

HAL1503SU-A-[C-P-Q-SP] 1503A

HAL1506SU-A-[C-P-Q-SP] 1506A

HAL1507SU-A-[C-P-Q-SP] 1507A

HAL1508SU-A-[C-P-Q-SP] 1508A

HAL1509SU-A-[C-P-Q-SP] 1509A

HAL1562SU-A-[C-P-Q-SP] 1562A

HAL1563SU-A-[C-P-Q-SP] 1563A

HAL1564SU-A-[C-P-Q-SP] 1564A

HAL1565SU-A-[C-P-Q-SP] 1565A

HAL1566SU-A-[C-P-Q-SP] 1566A

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ADVANCE INFORMATION HAL 15xy

3. Functional Description

HAL 15xy Hall-effect sensor switches are available Reverse Temperature

Hysteresis
with different magnetic switching levels and output Voltage &
ESD
Dependent
Control
Overtemperature
Protection
Bias
polarity. VSUP Protection

Hall Plate
HAL 15xy sensors are monolithic integrated circuits Comparator
which switch in response to magnetic fields. If a mag- Switch
Current
OUT
Source
netic field with flux lines perpendicular to the sensitive (NC)

area is applied to the sensor, the biased Hall plate

forces a Hall voltage proportional to this field. The Hall
voltage is compared with the actual threshold level in Functional
Safety
the comparator. If the magnetic field exceeds the Features
threshold levels, the output stage (open drain output
for 3-wire devices or current source for 2-wire devices)
is switched to the appropriate state. GND

The built-in hysteresis eliminates oscillation and pro- Fig. 3–2: HAL 15xy block diagram - 2-wire version
vides switching behavior of output without bouncing.

Magnetic offset caused by mechanical stress is com- 3.1. Functional Safety According to ISO 26262
pensated by using the “switching offset compensation
technique”. Members of HAL 15xy switch family are ASIL A ready.

A serial resistor or diode on the supply line is not Magnetic and switching performance is defined as
required thanks to the built-in reverse voltage protec- technical safety requirement.
tion. The safe state is defined as tri-state for 3-wire devices,
and low-current level for 2-wire devices.
The open drain output is forced to a safe, high-imped-
ance state (tri-state), in any of the following fault condi-
tions: overtemperature, undervoltage and functional 3.1.1. Diagnostic Features
safety related diagnoses (see Section 3.1.). In addi-
tion, the output current is limited (short-circuit protec- Internal states are monitored and in an error condition
tion). flagged with a tri-state at the output (3-wire devices) or
a low current level (2-wires devices):
The device is able to withstand a maximum supply – Internal voltage regulator: under and over voltage
voltage of 24 V for unlimited time and features over- detection
voltage capability (40V load dump).
– Monitoring of internal bias and current levels
– Monitoring of the internal reference voltage
Reverse Temperature
Hysteresis
Short Circuit – Monitoring of the Hall plate voltage
Voltage & Dependent Overtemperature
ESD Control ESD Protection
VSUP Bias
Protection

Hall Plate
Comparator

Switch Output OUT

Functional
Safety
Features

GND

Fig. 3–1: HAL 15xy block diagram - 3-wire version

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HAL 15xy ADVANCE INFORMATION

3.2. Power-On Self-Test (3-wire)

The power-on self-test allows the customer to execute

a functional check of the device, as well as to detect
wire breaks as long as the host controls the power
supply of the device.

The self-test can be enabled only once after power-on.

In order to start the test, the host has to switch off the
sensor and to pull down its output pin. Afterwards, the
host needs to switch on the sensor again (sensor in tri-
state mode, after waking up) and releases its output
pin. This order of events is the criteria for the sensor to
start the power-on self-test.

Now, the sensor simulates a magnetic field for a pre-

defined period of time (see first observation window in
Fig. 5–1), driving the sensor’s output to low level,
detected by the host.

Subsequently, the sensor simulates an opposite mag-

netic field during the second observation window (see
Fig. 5–1), driving the sensor’s output to high level, also
detected by the host. While the self-test is executed,
external magnetic fields up to approx. 500 mT are sup-
pressed.

After the self-test is done, the complete signal path

was tested and the sensor works as usual.

In addition, by positioning the pull-up resistor close to

the control unit, wire breaks at the pins VSUP, Output
and Ground can be detected as well.

It is also possible to enable the power-on self-test in

application systems, consisting of several HAL 15xy
sensors.

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ADVANCE INFORMATION HAL 15xy

VSUP
tstrtno
VSUPsens tflxn
tstrtn
tflxp
0V
tstrtp

Host driver

Sensor driver

VIO

Host sampling First window Second window

Fig. 3–3: Self-test timing diagram

Sensor Host

VSUPsens
VSUP SUPOUT
VSUP

VIO
OUT I/O

GND GND

Fig. 3–4: External circuit diagram with switchable supply

Note: If self-test is required for 2-wire version, please contact Micronas service.

Micronas Dec. 11, 2014; AI000175_003EN 11

HAL 15xy ADVANCE INFORMATION

4. Specifications
4.1. Outline Dimensions

D
A
x H
Bd
B c
Center of sensitive area B
3
B

E1
E

(L1)
1 2

3x b
e 0
0.25
e1

GAUGE PLANE
BASE METAL
A4

SECTION "B-B"
A3
A2

c1
c
A

0.10 C 3x
b1
b
SEATING PLANE
WITH PLATING
A1

0 1.25 2.5mm
physical dimensions do not include moldflash.
scale
A4, Bd, x, y= these dimensions are different for each sensor type and are specified in the data
sheet.

UNIT A A1 A2 A3 b b1 c c1 D E E1 e e1 L L1 0

1.10 0.05 0.88 0.3 0.3 0.1 0.1 2.8 2.1 1.2 0.4 0°
mm 0.5 0.95 1.9 0.55
max. 0.10 1.02 0.48 0.45 0.18 0.15 3.0 2.5 1.4 0.6 8°

JEDEC STANDARD
ISSUE DATE
ANSI DRAWING-NO. ZG-NO.
YY-MM-DD
ISSUE ITEM NO.

- TO-236 13-05-10 06902.0001.4 ZG001101_Ver.01

© Copyright 2007 Micronas GmbH, all rights reserved

Fig. 4–1:
SOT23: Plastic Small Outline Transistor package, 3 leads
Ordering code: SU
Weight approximately tbd

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ADVANCE INFORMATION HAL 15xy

4.2. Soldering, Welding and Assembly

Please check the Micronas Document “Guidelines for the Assembly of HAL Packages” for further information about
solderability, welding, assembly, and second-level packaging. The document is available on the Micronas website or
on the service portal.

4.3. Pin Connections and Short Descriptions

4.4. Dimension of Sensitive Area
GND
3 0.25 mm  0.12 mm

4.4.1. Position of Sensitive Area

SOT23
1 2
VSUP OUT y 0.65 mm nominal

A4 0.272 mm nominal
VSUP
x 1.45 mm nominal
OUT
Bd TBD

GND

Fig. 4–2: 3-wire pin configuration

OUT (NC)

Fig. 4–3: 2-wire pin configuration

Table 4–1: Pin assignment.

Pin Name Function

number
3-wire 2-wire

1 VSUP Supply Supply

voltage and output

2 OUT Output NC1)

3 GND Ground Ground

1)
NC=not connected: connect to ground.

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HAL 15xy ADVANCE INFORMATION

4.5. Absolute Maximum Ratings

Stresses beyond those listed in the “Absolute Maximum Ratings” may cause permanent damage to the device. This
is a stress rating only. Functional operation of the device at these conditions is not implied. Exposure to absolute
maximum rating conditions for extended periods will affect device reliability.

This device contains circuitry to protect the inputs and outputs against damage due to high static voltages or electric
fields; however, it is advised that normal precautions be taken to avoid application of any voltage higher than abso-
lute maximum-rated voltages to this circuit.

All voltages listed are referenced to ground (GND).

Symbol Parameter Pin No Min. Max. Unit Conditions

VSUP Supply voltage 1 18  V t < 1000 h 1)

 28 V t < 96 h1)

 32 V t < 5 min1)

 40 V t < 5 x 400 ms1)

with series resistor RV > 100 .

VOUT Output voltage 3 0.5  V t < 1000 h1)

 28 V t < 96 h1)

 32 V t < 5 min1)

 40 V t < 5 x 400 ms1)

with series resistor RL > 100 .

IO Output current 3  65 mA

IOR Reverse output current 3 50 mA

TJ Junction temperature range A  40 190 °C t < 96 h1)

1) No cumulative stress

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ADVANCE INFORMATION HAL 15xy

4.6. Storage and Solderability

For the package SOT23 the moisture sensitivity level (MSL) is 1 (JEDEC-STD-020C).

Solderability is guaranteed for 2 years from the date code on the package provided the devices are stored at a max-
imum of 30 C and a maximum of 95% relative humidity.

4.7. ESD and Latch-up

The output pin has to be in tri-state (high impedance) for ESD measurements.

Table 4–2: ESD and latch-up

Symbol Parameter Min. Max. Unit

Ilatch Maximum latch-up free current at any pin (measurement according to 100 100 mA
AEC Q100-004), class 1
VHBM Human body model (according to AEC Q100-002) 8 8 kV

VCDM Charged device model (according to AEC Q100-011) 1 1 kV

VSYSTEM_LEVEL ESD system level according to ISO 10605-20081) 5 5 kV

1)with circuit as shown in Fig. 5–5

4.8. Recommended Operating Conditions

Functional operation of the device beyond those indicated in the “Recommended Operating Conditions” of this speci-
fication is not implied, may result in unpredictable behavior of the device and may reduce reliability and lifetime.

All voltages listed are referenced to ground (GND).

Symbol Parameter Pin No Min. Typ. Max. Unit Conditions

VSUP Supply voltage 1 2.7 24 V 3-wire

3.0 2-wire

TJ Junction temperature range A 1)  40 170 °C t < 1000 h2)

150 t < 2500 h2)
125 t < 8000 h2)

VOUT Output voltage 3 24 V

IOUT Output current 3 25 mA

1)
Depends on the temperature profile of the application. Please contact Micronas for life time calculations.
2)
No cumulative stress

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HAL 15xy ADVANCE INFORMATION

4.9. Characteristics

at TJ = 40 C to +170 C, VSUP = 3.0 V to 24 V,

at Recommended Operation Conditions if not otherwise specified in the column “Conditions”.
Typical Characteristics for TJ = 25 C and VSUP = 12 V

Symbol Parameter Pin Min. Typ. Max. Unit Conditions

No.

Supply

ISUP Supply current 1 1.6 2.4 mA 3-wire

ISUPlo Low supply current 1 2 5 mA 2-wire

HAL 1564
HAL 1565

ISUPlo Low supply current 1 5 7 mA 2-wire

HAL 1562
HAL 1563
HAL 1566

ISUPhi High supply current 1 12 17 mA 2-wire

ISUPR Reverse current 1 mA for VSUP = -18 V

Port Output

Vol Port low output voltage 3 0.13 0.4 V IO = 20 mA

0.5 V IO = 25 mA

tf Output fall time1) 1 µs VSUP = 12V; RL = 820 ;

1);
CL = 20 pF
tr Output rise time1) 1 µs

Bnoise Effective noise of magnetic ~60 µT For square wave signal with
switching points 1 kHz

tjpp Output jitter peak-to-peak 2 µs peak-to-peak

tj Output jitter1)2) 0.58 0.72 µs For square wave signal with

1 kHz. Jitter is evenly distributed
between 1 µs and +1 µs

td Delay time1) 16 µs

tsamp Output refresh period 1.6 2 2.66 µs

ten Enable time of output after settling 50 µs VSUP = 12V

of VSUP B > Bon + 2 mT or B < Boff - 2 mT
1)
Not tested, characterized only
2)
RMS

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ADVANCE INFORMATION HAL 15xy

Symbol Parameter Pin Min. Typ. Max. Unit Conditions

No.

Power-on self-test

tdsamp Double sample period 3.2 4 5.3 µs

tstrtp Start of first sampling window 3 tdsamp

tflxp End of first sampling window 9 tdsamp

tstrtn Start of second sampling window 19 tdsamp

tflxn End of second sampling window 31 tdsamp

tstrtno Start of first normal operation 36.5 37 tdsamp

value

Package SOT-23 JEDEC

Rthja Thermal Resistance junction to air   300 K/W Measured with a 1s0p

Rthja Thermal Resistance junction to air   250 K/W Measured with a 1s1p

Rthja Thermal Resistance junction to air   210 K/W Measured with a 2s2p

4.10. Magnetic Characteristics Overview

Table 4–3: TJ = 40 °C to +170 °C, VSUP = 3.0 V to 24 V, GND = 0 V, recommended operation conditions if not otherwise
specified in the column “Conditions”. Typical characteristics for TJ = 25 °C.

Symbol Parameter Pin No. Min. Typ. Max. Unit Conditions

BONth ON threshold range  30 30 mT

BOFFth OFF threshold range  30 30 mT

Bth Adjustable step size 0.5 mT

TC Temperature compensation of  30% 0 +30% ppm/K Selectable by mask option in

magnetic thresholds steps of 100 ppm/K in a range of
300 0 up to 3000 ppm/K.

1000

1700

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HAL 15xy ADVANCE INFORMATION

4.10.1. HAL 15xy Magnetic Characteristics

SOT23 package, TJ =40 C to +170 C, VSUP = 3.0 V to 24 V. Typical Characteristics for TJ = 25 °C, VSUP=12 V.
Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the
branded side of the package.

Sensor Switching Type Temp. coeff. of On point BON Off point BOFF Hysteresis BHYS1)
[mT]
magnetic thresh. [mT] [mT]

TC [ppm/K] Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.

3-wire
HAL 1501 bipolar 0 tbd 0.5 tbd tbd 0.5 tbd  1.0 

HAL 1502 latching 1000 tbd 2.5 tbd tbd 2.5 tbd  5.0 

HAL 1503 unipolar 1000 tbd 5.5 tbd tbd 3.5 tbd  2.0 

HAL 1506 unipolar 1200 tbd 18.0 tbd tbd 16.0 tbd  2.0 

HAL 1507 unipolar 300 tbd 27.0 tbd tbd 23.0 tbd  6.0 

HAL 1508 unipolar 1000 tbd 5.5 tbd tbd 3.5 tbd  2.0 

HAL 1509 unipolar inverted 1200 tbd 3.5 tbd tbd 5.5 tbd  2.0 
1) The
hysteresis is the difference between the switching points BHYS = BON  BOFF

2-wire
HAL 1562 latching 0 tbd 12.0 tbd tbd 12.0 tbd  24.0 

HAL 1563 unipolar inverted 0 tbd 7.0 tbd tbd 9.0 tbd  2.0 

HAL 1564 unipolar inverted 1000 tbd 4.0 tbd tbd 6.0 tbd  2.0 

HAL 1565 unipolar 1000 tbd 6.0 tbd tbd 4.0 tbd  2.0 

HAL 1566 unipolar 0 tbd 9.0 tbd tbd 7.0 tbd  2.0 
1) The
hysteresis is the difference between the switching points BHYS = BON  BOFF

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ADVANCE INFORMATION HAL 15xy

5. Application Notes

5.1. Application Circuit

5.1.1. 3-Wire Devices 5.1.2. 2-Wire Devices

Typical application circuit (see Fig. 5–1) Fig. 5–3 shows a simple application with a 2-wire sen-
sor. The current consumption can be detected by mea-
suring the voltage over RL. For correct functioning of
VSUP the sensor, the voltage between VSUP and GND must
be a minimum of VSUPmin V. With the maximum current
consumption of ISUPhimax, the maximum RL can be cal-
RL culated as:

OUT V BATTmin – V SUPmin

R Lmax = ---------------------------------------------------
I SUPhimax

GND GND
VSUP
VBATT
Fig. 5–1: Example 3-wire application circuit 1
VSIG OUT

For applications with disturbances on the supply line or RL

radiated disturbances, a series resistor RV and two
capacitors CP and CL all placed close to the sensor are GND
recommended (see Fig. 5–2).
For example: RV =100  CP = 4.7 nF, and CL = 10 nF.
Fig. 5–3: Example 2-wire application circuit 1

VSUP
For applications with disturbances on the supply line or
radiated disturbances, a series resistor RV and a
RV RL capacitor CP both placed close to the sensor are rec-
ommended (see Fig. 5–4). In this case, the maximum
RL can be calculated as:
OUT
CP
V BATTmin – V SUPmin
R Lmax = --------------------------------------------------- – R V
CL I SUPhimax

GND GND
For example: RV =100 and CP = 4.7 nF
Fig. 5–2: Example 3-wire application circuit 2

VSUP
VBATT

VSIG OUT
CP

RL

GND

Fig. 5–4: Example 2-wire application circuit 2

Micronas Dec. 11, 2014; AI000175_003EN 19

HAL 15xy ADVANCE INFORMATION

5.1.3. ESD System Level Application Circuit

(ISO10605-2008)

For an ESD system level application circuit according

to ISO10605-2008 an RL of 1.2 k and an additional
TVS diode is recommended.

VSUP

RV =100  RL=1.2 k

OUT
CP = 4.7 nF

TVS Diode CL = 10 nF
24 V
GND

Fig. 5–5: Application circuit with external resistor

20 Dec. 11, 2014; AI000175_003EN Micronas

ADVANCE INFORMATION
5.2. Ambient Temperature
Due to the internal power dissipation, the temperature
on the silicon chip (junction temperature TJ) is higher
than the temperature outside the package (ambient
temperature TA).
T J = T A + T
Under static conditions and continuous operation, the
following equation applies:
T =  I SUP  V SUP  R th  +  I OUT  V OUT  R th 
For all sensors, the junction temperature range TJ is
specified. The maximum ambient temperature TAmax
can be calculated as:
T Amax = T Jmax – T
For typical values, use the typical parameters. For
worst case calculation, use the max. parameters for
ISUP, IOUT and Rth, and the max. value for VOUT and
VSUP from the application.
For 2-wire devices self-heating can be critical due to
the range of ISUPhi. The junction temperature can be
reduced with pulsed supply voltage. For supply times
(ton) ranging from 30s to 1 ms, the following equation
can be used:
t on
T = I SUP  V SUP  R th  --------------------
t off + t on
Micronas
HAL 15xy
5.3. Start-Up Behavior
The sensors have an initialization time (enable time
ten) after applying the supply voltage. The parameter
ten is specified in the Electrical Characteristics (see
page 16).
During the initialization time, the output state (3-wire
devices) and the current consumption (2-wire devices)
is defined, tri-state for 3-wire and low current for 2-
wire.
For 3-wire devices, after ten, the output will be low if the
applied magnetic field B is above BON. The output will
be high if B is below BOFF. In case of sensors with an
inverted switching behavior, the output state will be
high if B > BOFF and low if B < BON.
For 2-wire devices, after ten, the current consumption
will be high if the applied magnetic field B is above
BON. The current consumption will be low if B is below
BOFF. In case of sensors with an inverted switching
behavior the current consumption will be low if B >
BOFF and high if B < BON.
Note: For magnetic fields between BOFF and BON after
applying VSUP., the output state of a 3-wire
device will be tri-state, and the current con-
sumption of a 2-wire device will be low current.
5.4. EMC and ESD
For applications with disturbances on the supply line or
radiated disturbances, a series resistor and a capacitor
are recommended. The series resistor and the capaci-
tor should be placed as closely as possible to the HAL
sensor.
Special applications arrangements will be evaluated to
pass EMC tests according to different standards, such
as ISO 7637, ISO 16750, IEC 61967, ISO 11452 and
ISO 62132.
Dec. 11, 2014; AI000175_003EN 21
HAL 15xy ADVANCE INFORMATION

6. Data Sheet History

1. Advance Information: “HAL 15xy, HAL 16xy Hall-
Effect Switch Families”, Feb. 19, 2014;
AI000175_001EN. First release of the Advance
Information.
2. Advance Information: “HAL 15xy, HAL 16xy Hall-
Effect Switch Families”, May 9, 2014;
AI000175_002EN. Second release of the Advance
Information. Major changes:
• Features Section 1.1. on page 4
• HAL 15xy Families Overview
3. Advance Information: “HAL 15xy, Hall-Effect Switch
Families”, Dec. 11, 2014; AI000175_003EN. Third
release of the Advance Information. Major changes:
• HAL 16xy sensor family removed
• ESD System Level Application Circuit added
• Characteristics: ISUPmax = 2.4 mA, Rthja-Values
added

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Tel. +49-761-517-0  Fax +49-761-517-2174  E-mail: docservice@micronas.com  Internet: www.micronas.com

22 Dec. 11, 2014; AI000175_003EN Micronas