Professional Documents
Culture Documents
SOIC-8
D
Top View Bottom View
D
D
D
D
G
G
S S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain TA=25°C -15
ID
Current TA=70°C -12.8 A
C
Pulsed Drain Current IDM -120
Avalanche Current C IAS, IAR 50 A
Avalanche energy L=0.1mH C EAS, EAR 125 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C
Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 31 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 59 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 16 24 °C/W
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
100 100
-10V VDS=-5V
-6V
80 80
-5V
60 60
-ID(A)
-ID (A)
40 -4.5V 40
125°C
20 25°C
20
VGS=-4V
0 0
0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)
10 1.6
VGS=-20V
Normalized On-Resistance
ID=-15A
8 VGS=-10V 1.4
Ω)
RDS(ON) (mΩ
17
6 1.2 5
VGS=-10V
2
ID=-15A
4 1
10
VGS=-20V
2 0.8
0 5 10 15 20 25 30 0 25 50 75 100 125 150 175
-ID (A) Temperature (°C) 0
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction
18Temperature
Voltage (Note E) (Note E)
20 1.0E+02
ID=-15A
1.0E+01
15 40 125°
1.0E+00
25°
Ω)
RDS(ON) (mΩ
1.0E-01
-IS (A)
10 125°
1.0E-02
1.0E-03
5
1.0E-04
25°
0 1.0E-05
10 5000
VDS=-15V
ID=-15A
8 4000
Ciss
Capacitance (pF)
-VGS (Volts)
6 3000
4 2000
Coss
2 1000
Crss
0 0
0 10 20 30 40 50 60 0 5 10 15 20 25 30
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics
1000.0
1000.0
-IAR (A) Peak Avalanche Current
100.0
10µs
TA=25°C
RDS(ON)
-ID (Amps)
10.0 0.0
1 10 100 1000 0.01 0.1 1 10 100
µs)
Time in avalanche, tA (µ -VDS (Volts)
Figure 9: Single Pulse Avalanche capability (Note C) Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)
10000
TA=25°C
1000
Power (W)
100
10
1
0.00001 0.001 0.1 10 1000
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
10
D=Ton/T In descending order
Zθ JA Normalized Transient
1 RθJA=75°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Ig
Charge
td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+
Vgs 10%
Vds
Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs
Vds + Q rr = - Idt
DUT
Vgs
t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds