Si4411DY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A)
• Halogen-free According to IEC 61249-2-21
Definition
0.010 at VGS = - 10 V - 13 • TrenchFET® Power MOSFET
- 30
0.0155 at VGS = - 4.5 V - 10 • Compliant to RoHS Directive 2002/95/EC

APPLICATIONS
• Notebook
SO-8 - Load Switch
- Battery Switch
S 1 8 D S
S 2 7 D

S 3 6 D
G
G 4 5 D

Top View

D
Ordering Information: Si4411DY-T1-E3 (Lead (Pb)-free)
Si4411DY-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 20
TA = 25 °C - 13 -9
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C - 10.5 - 7.5
A
Pulsed Drain Current IDM - 50
Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36
TA = 25 °C 3.0 1.5
Maximum Power Dissipationa PD W
TA = 70 °C 1.9 0.95
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 33 42
Maximum Junction-to-Ambienta RthJA
Steady State 70 85 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72149 www.vishay.com

S09-0767-Rev. D, 04-May-09 1
Si4411DY
Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V
Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 10
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 30 A
VGS = - 10 V, ID = - 13 A 0.008 0.010
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 10 A 0.0125 0.0155
Forward Transconductancea gfs VDS = - 15 V, ID = - 13 A 40 S
a VSD IS = - 2.7 A, VGS = 0 V - 0.74 - 1.1 V
Diode Forward Voltage
Dynamicb
Total Gate Charge Qg 43 65
Gate-Source Charge Qgs VDS = - 15 V, VGS = - 5 V, ID = - 13 A 8.5 nC
Gate-Drain Charge Qgd 18.5
Gate Resistance Rg 3.4 Ω
Turn-On Delay Time td(on) 18 30
Rise Time tr VDD = - 15 V, RL = 15 Ω 15 25
Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 140 250 ns
Fall Time tf 75 120
Source-Drain Reverse Recovery Time trr IF = - 2.1 A, dI/dt = 100 A/µs 60 100
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

50 50

VGS = 10 V thru 4 V
40 40
I D - Drain Current (A)

ID - Drain Current (A)

30 30

20 20
3V
TC = 125 °C

10 10
25 °C
- 55 °C
0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

www.vishay.com Document Number: 72149

2 S09-0767-Rev. D, 04-May-09
 Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.020 5500

0.016 4400
R DS(on) - On-Resistance ( )

VGS = 4.5 V Ciss

C - Capacitance (pF)
0.012 3300

VGS = 10 V
0.008 2200

Coss
0.004 1100

Crss
0.000 0
0 10 20 30 40 50 0 6 12 18 24 30

ID - Drain Current (A) VDS - Drain-to-Source Voltage (V)

On-Resistance vs. Drain Current Capacitance

6 1.6
VDS = 15 V VGS = 10 V
ID = 13 A ID = 13 A
5
VGS - Gate-to-Source Voltage (V)

1.4
R DS(on) - On-Resistance

4
(Normalized)

1.2

1.0
2

0.8
1

0 0.6
0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150
Qg - Total Gate Charge (nC) TJ - Junction Temperature (°C)
Gate Charge On-Resistance vs. Junction Temperature

50 0.030

TJ = 150 °C 0.024
I S - Source Current (A)

10
R DS(on) - On-Resistance (

0.018 ID = 13 A

0.012
1
TJ = 25 °C

0.006

0.1 0.000
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 72149 www.vishay.com

S09-0767-Rev. D, 04-May-09 3
Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8
50

0.6
40
ID = 250 µA
V GS(th) Variance (V)

0.4
30

Power (W)
0.2

20
0.0

- 0.2 10

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100

Limited by R DS(on) *
10
1 ms
ID - Drain Current (A)

10 ms
1
100 ms

1s
0.1 10 s
TC = 25 °C
Single Pulse DC

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which RDS(on) is specified
Safe Operating Area, Junction-to-Case

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM
0.05
t1
t2
t1
0.02 1. Duty Cycle, D =
t2
2. Per Unit Base = RthJA = 70 °C/W
3. TJM - TA = PDMZthJA(t)
Single Pulse 4. Surface Mounted
0.01
10 -4 10 -3 10 -2 10 -1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com Document Number: 72149

4 S09-0767-Rev. D, 04-May-09
 Si4411DY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10 -4 10 -3 10 -2 10 -1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72149.

Document Number: 72149 www.vishay.com

S09-0767-Rev. D, 04-May-09 5
 Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12 1 Document Number: 91000