Si4483EDY

Vishay Siliconix

P-Channel 30-V (D-S) MOSFET

PRODUCT SUMMARY FEATURES

VDS (V) RDS(on) (Ω) ID (A) • Halogen-free According to IEC 61249-2-21
Available
0.0085 at VGS = - 10 V - 14
- 30 • TrenchFET® Power MOSFET
0.014 at VGS = - 4.5 V - 11
• ESD Protection: 3000 V

APPLICATIONS
• Notebook PC
- Load Switch
- Adapter Switch
S
SO-8

S 1 8 D

S 2 7 D

S 3 6 D
G 4 5 D G
7100 Ω
Top View

P-Channel
Ordering Information: Si4483EDY-T1-E3 (Lead (Pb)-free)
Si4483EDY-T1-GE3 (Lead (Pb)-free and Halogen-free) D

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage VDS - 30
V
Gate-Source Voltage VGS ± 25
TA = 25 °C - 14 - 10
Continuous Drain Current (TJ = 150 °C)a ID
TA = 70 °C - 11 -8
A
Pulsed Drain Current IDM - 50
Continuous Source Current (Diode Conduction)a IS - 2.7 - 1.36
TA = 25 °C 3.0 1.5
Maximum Power Dissipationa PD W
TA = 70 °C 1.9 0.95
Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit
t ≤ 10 s 33 42
Maximum Junction-to-Ambienta RthJA
Steady State 70 85 °C/W
Maximum Junction-to-Foot (Drain) Steady State RthJF 16 21
Notes:
a. Surface Mounted on 1" x 1" FR4 board.

Document Number: 72862 www.vishay.com

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Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 1.0 - 3.0 V
VDS = 0 V, VGS = ± 4.5 V ±1 µA
Gate-Body Leakage IGSS
VDS = 0 V, VGS = ± 25 V ± 10 mA
VDS = - 30 V, VGS = 0 V -1
Zero Gate Voltage Drain Current IDSS µA
VDS = - 30 V, VGS = 0 V, TJ = 70 °C - 10
On-State Drain Currenta ID(on) VDS = - 5 V, VGS = - 10 V - 30 A
VGS = - 10 V, ID = - 14 A 0.007 0.0085
Drain-Source On-State Resistancea RDS(on) Ω
VGS = - 4.5 V, ID = - 11 A 0.0115 0.014
Forward Transconductancea gfs VDS = - 15 V, ID = - 14 A 60 S
a VSD IS = - 2.7 A, VGS = 0 V - 0.74 - 1.1 V
Diode Forward Voltage
Dynamicb
Turn-On Delay Time td(on) 10 15
Rise Time tr VDD = - 15 V, RL = 15 Ω 20 30
µs
Turn-Off Delay Time td(off) ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 42 65
Fall Time tf 50 80
Notes:
a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

8 100

10
I GSS - Gate Current (mA)

6
I GSS - Gate Current (mA)

TJ = 150 °C
1

TJ = 25 °C
4 0.1

0.01
2
0.001

0 0.0001
0 5 10 15 20 25 30 0 6 12 18 24 30

VGS - Gate-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Gate-Current vs. Gate-Source Voltage Gate Current vs. Gate-Source Voltage

www.vishay.com Document Number: 72862

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Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
50 50

VGS = 10 thru 4 V
3V
40 40

I D - Drain Current (A)

I D - Drain Current (A)

30 30

20 20

TC = 125 °C
10 10
25 °C - 55 °C

0 0
0 1 2 3 4 5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V)

Output Characteristics Transfer Characteristics

0.020 1.6

0.016 1.4
R DS(on) - On-Resistance (Ω)

R DS(on) - On-Resistance
(Normalized)

0.012 VGS = 4.5 V 1.2

0.008 VGS = 10 V 1.0

0.004 0.8

0.000 0.6
0 10 20 30 40 50 - 50 - 25 0 25 50 75 100 125 150

ID - Drain Current (A) TJ - Junction Temperature (°C)

On-Resistance vs. Drain Current On-Resistance vs. Junction Temperature

50 0.05

ID = 14 A
TJ = 150 °C
0.04
I S - Source Current (A)

RDS(on) - On-Resistance (Ω)

10

0.03

TJ = 25 °C

1 0.02

0.01

0.1 0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 2 4 6 8 10
VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V)
Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage

Document Number: 72862 www.vishay.com

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Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
0.8 50

0.6
40
ID = 250 µA
VGS(th) Variance (V)

0.4

Power (W)
30

0.2

20
0.0

10
- 0.2

- 0.4 0
- 50 - 25 0 25 50 75 100 125 150 0.01 0.1 1 10 100 600
TJ - Temperature (°C) Time (s)
Threshold Voltage Single Pulse Power

100

Limited by
RDS(on)*

10
I D - Drain Current (A)

1 ms

10 ms
1
100 ms

1s
0.1 10 s
TC = 25 °C
Single Pulse DC

0.01
0.1 1 10 100
VDS - Drain-to-Source Voltage (V)
* V GS > minimum V GS at which rDS(on) is specified
Safe Operating Area, Junction-to-Case

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2
Notes:
0.1
0.1 PDM

0.05 t1
t2
t1
1. Duty Cycle, D =
t2
0.02 2. Per Unit Base = R thJA = 70 °C/W
3. T JM - TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10- 4 10- 3 10- 2 10- 1 1 10 100 600
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Ambient

www.vishay.com Document Number: 72862

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 Si4483EDY
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

1
Normalized Effective Transient

Duty Cycle = 0.5

Thermal Impedance

0.2

0.1
0.1
0.05

0.02

Single Pulse
0.01
10- 4 10- 3 10- 2 10- 1 1 10
Square Wave Pulse Duration (s)
Normalized Thermal Transient Impedance, Junction-to-Foot

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?72862.

Document Number: 72862 www.vishay.com

S-83038-Rev. D, 22-Dec-08 5
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Revision: 02-Oct-12 1 Document Number: 91000