This product complies with the RoHS Directive (EU 2002/95/EC).

Power Transistors

2SC5913
Silicon NPN triple diffusion mesa type

Horizontal deflection output for TV, CRT Monitor Unit: mm

15.5±0.5 φ 3.2±0.1 3.0±0.3
5˚
5˚
■ Features

(10.0)

(4.5)
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• High breakdown voltage: VCBO ≥ 1 500 V

(23.4)
26.5±0.5

22.0±0.5
• Wide safe operation area

(1.2)
• Built-in dumper diode

(2.0)
5˚

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(4.0) 5˚
2.0±0.2 5˚

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Solder Dip

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■ Absolute Maximum Ratings TC = 25°C 1.1±0.1

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Parameter Symbol Rating Unit

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10.9±0.5
Collector-base voltage (Emitter open) VCBO 1 500 V

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5.5±0.3
3.3±0.3

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Collector-emitter voltage (E-B short) VCES 1 500 V 5˚
1 2 3
1: Base

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Emitter-base voltage (Collector open) VEBO 5 V

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2: Collector

(2.0)
Base current IB 3 A 3: Emitter

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Collector current IC 6 A EIAJ: SC-94

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Peak collector current * ICP 9 A
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Collector power dissipation PC 40 W Internal Connection

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Ta = 25°C 3

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Junction temperature Tj 150

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−55 to +150 °C

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Storage temperature Tstg

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■ Electrical Characteristics TC = 25°C ± 3°C

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Parameter Symbol Conditions Min Typ Max Unit

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Forward voltage VF IF = 3 A −2 V
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Collector-base cutoff current (Emitter open) ICBO 50

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Forward current transfer ratio hFE VCE = 5 V, IC = 3 A 5 10 

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Collector-emitter saturation voltage VCE(sat) IC = 3 A, IB = 0.75 A 2.5 V

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Base-emitter saturation voltage VBE(sat) IC = 3 A, IB = 0.75 A 1.5 V

Transition frequency fT VCE = 10 V, IC = 0.1 A, f = 0.5 MHz 3 MHz
Storage time tstg IC = 3 A, Resistance loaded 5.0 µs
Fall time tf IB1 = 0.75 A, IB2 = −1.5 A 0.5 µs
Note) Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.

Publication date: March 2004 SJD00309AED 1

 This product complies with the RoHS Directive (EU 2002/95/EC).
2SC5913

PC  Ta Safe operation area Safe operation area (Horizontal operation)

80 100 10
(1) TC = Ta fH = 15.45 kHz, TC < 90°C
70 (2) With a 100 × 100 × 2 mm t= 9 A.S.O for a single
Collector power dissipation PC (W)

Al heat sink t = 100 µs pulse load caused by

ICP 10 ms EHT flash over during
(3) Without heat sink 10 8
60 horizontal operation.
t=

Collector current IC (A)

Collector current IC (A)
IC DC One action of the device must
1 ms 7
not use in all areas.
50 (area A, B and C)
1 6 But it is able to use in two areas.
A (area A and B or area B and C)
40 5
(1)
10−1

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30
3
20
10−2 2
10 B C

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(2) 1
(3) Non repetitive pulse
TC = 25°C

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< 1 mA

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0 10−3 0

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0 25 50 75 100 125 150 1 10 100 1 000 0 500 1 000 1 500 2 000

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Ambient temperature Ta (°C) Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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2 SJD00309AED
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ue e/
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

tin nc
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

d
.
Standards in advance to make sure that the latest specifications satisfy your requirements.

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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

cy
defect which may arise later in your equipment.

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Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ct
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

du
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
.se ng ntin tin ty e ty ur
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

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Electric Industrial Co., Ltd.

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