A transistor (BJT) is 3 layer, 3 terminal, 2 junction semiconductor device. + Itconsist of either two n-type and one p-type layers of material called n-pon transistor or yy OD io and one n-type material called p-n-p transistor. In transistor current flows due to both majority 2s well as minority carrier that’s why Called bipolar device. It is a current controlled device. \ (Os input impedance is low and output impedance is high. Thermal stability is lesser because of leakage current or reverse saturation current, In transistor all the major currents are diffusion currents. Base current is recombination current. A transistor represented by two diode connected back to back cannot work as transistor as there no bonding between base and collector. Current conduction in p-n-p transistor is carried out by hole whercas in n-p-n transistor itis due electrons. Scanned with CamScannerEmiter: Heavily doped as comparison to other regions. The main function of this region —enction of this regi is to supply majority charge carrier ie, either electrons or holes. This section is very lightly doped and very thin as compared to other section. Its main function is to transfer the majority carriers from emitter to collector. Collector: — This section is moderately doped and has largest area than other two regions because it collects the charge carries from emitter and base. There is a large amount of heat liberation and so it is provided with large area to dissipate the heat. Configuration: Input node © Output node Reference or ‘common node on the reference node a BJT can be used in 3 configuration as given in table below: Configuration | Input node "| “Outputnode Common Base (CB) E c Common Emitter (CE) B c ‘Common Collector (CC) B E Emitter-Base: | (E-B)Junction | (C- Reverse bias Reverse bias Very high internal resistance Cut-off OFF-switch Active Forward bias Reverse bias Excellent transistor action Amplifier hturation Forward bias | Forward bias | Very low internal resistance ON-switch "se Active | Reverse bias | Forward bias | Very poor transistor action Attenuator _ (Practically not us Scanned with CamScannerCommon Base p-n-p transistor Current amplification factor (ay When no signal is applied then the rai of yy collector current to emitter current is called Curren, amplification factor or current gain. 4 of 5 transistor is a measure of the quality Of transit, Higher is the value of a better is the transistor ag le approaches Ie. Signal {il Veo Common emitter p-n-p transistor Base current amplification factor (f) When no signal is applied the the ratio of collector current to the base current is called B. B usually | ranges from 20 to 500. Common emitter configuration is used when appreciable current gain as well as voltage gain is required. Te Current amplification factor (7) ‘When no signal is applied then thé ratio of emitter current to the base current is called y of the transistor. + Common collector configuration has very high ~ 750 kQ and very low output Scanned with CamScanneris being operated in active region, | {f base current Ip < aE «then the transistor i Sle< test , Breakdown Ce current Ip > mE | then the transistor is being operated in saturated region. o> Ler Lesa Me —— for above figure. c * Collector current, Ic Pe Vee = Vers ‘ce = Vec at cut-off when Ic = 0. We : : * Maximum value of current, Tomax = a in ideal case. [Taking Vcr =0 at saturation] ic woes dissipated in a transistor Pp = Ic Vee ower dissipation is maximum in active region and minimum in cut-off and saturation region. BJT Current-Voltage Relationship in Active Mode _ 1c Bil Tp = Base Current ate Ic= Collector Current Emitter Current Saturation Current Base-Emitter Voltage Scanned with CamScanner