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Ordering number : ENN7505

15C01M
NPN Epitaxial Planar Silicon Transistor

15C01M
Low-Frequency
General-Purpose Amplifier Applications

Applications Package Dimensions


• Low-frequency Amplifier, muting circuit. unit : mm
2059B
[15C01M]
Features

0.425
• Large current capacitance. 0.3

0.2
0.15
• Low collector-to-emitter saturation voltage (resistance). 3
RCE (sat) typ.=0.58Ω [IC=0.7A, IB=35mA]. 0 to 0.1

1.250
2.1
• Ultrasmall package facilitates miniaturization in end
products. 1 2
0.65 0.65 0.3 0.6

0.425
• Small ON-resistance (Ron). 2.0
0.9

1 : Base
2 : Emitter
3 : Collector

SANYO : MCP

Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Collector-to-Base Voltage VCBO 20 V
Collector-to-Emitter Voltage VCEO 15 V
Emitter-to-Base Voltage VEBO 5 V
Collector Current IC 700 mA
Collector Current (Pulse) ICP 1.4 A
Collector Dissipation PC Mounted on a glass epoxy board (20✕30✕1.6mm) 300 mW
Junction Temperature Tj 150 °C
Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector Cutoff Current ICBO VCB=15V, IE=0 0.1 µA
Emitter Cutoff Current IEBO VEB=4V, IC=0 0.1 µA
DC Current Gain hFE VCE=2V, IC=10mA 300 800
Gain-Bandwidth Product fT VCE=2V, IC=50mA 330 MHz
Output Capacitance Cob VCB=10V, f=1MHz 3.2 pF
Collector-to-Emitter Saturation Voltage VCE(sat) IC=200mA, IB=10mA 150 300 mV
Base-to-Emitter Saturation Voltage VBE(sat) IC=200mA, IB=10mA 0.9 1.2 V
Marking : YP Continued on next page.

Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.

SANYO Electric Co.,Ltd. Semiconductor Company


TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
O3003 TS IM TA-3683 No.7505-1/4
15C01M

Continued from preceding page.


Ratings
Parameter Symbol Conditions Unit
min typ max
Collector-to-Base Breakdown Voltage V(BR)CBO IC=10µA, IE=0 20 V
Collector-to-Emitter Breakdown Voltage V(BR)CEO IC=1mA, RBE=∞ 15 V
Emitter-to-Base Breakdown Voltage V(BR)EBO IE=10µA, IC=0 5 V
Turn-ON Time ton See specified Test Circuit. 30 ns
Storage Time tstg See specified Test Circuit. 77 ns
Fall Time tf See specified Test Circuit. 40 ns

Switching Time Test Circuit

IB1
PW=20µs
OUTPUT
D.C.≤1% IB2

INPUT RB
VR RL

50Ω
+ +
220µF 470µF

VBE= --5V VCC=5V

IC=20IB1= --20IB2=500mA

IC -- VCE IC -- VBE
200 800
A VCE=2V
mA

180
0.8m 0.7mA
0.9

700
160
0.6mA
Collector Current, IC -- mA

Collector Current, IC -- mA
1.0mA

600
140 0.5mA
500
120 0.4mA
100 400
0.3mA
C
25°C
75°

80
°C

300
0.2mA
Ta=

--25

60
200
40 0.1mA
100
20
IB=0
0 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 0.2 0.4 0.6 0.8 1.0 1.2
Collector-to-Emitter Voltage, VCE -- V IT05490 Base-to-Emitter Voltage, VBE -- V IT05491
hFE -- IC VCE(sat) -- IC
1000 1000
VCE=2V IC / IB=20
7
7
Saturation Voltage, VCE(sat) -- mV

5
5 25°C
Ta=75°C
3
DC Current Gain, hFE

3 2
--25°C
2
Collector-to-Emitter

100
7 °C
75

= C
100 5 Ta --2
7 3 °C
25
5 2

3 10
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05492 Collector Current, IC -- mA IT05493

No.7505-2/4
15C01M
VCE(sat) -- IC VBE(sat) -- IC
1000 10000
IC / IB=50 IC / IB=20
7 7
Saturation Voltage, VCE(sat) -- mV

Saturation Voltage, VBE(sat) -- mV


5 5

3 3

2 2
Collector-to-Emitter

100 °C 1000 Ta= --25°C


= 75
Ta

Base-to-Emitter
5°C
7 7
--2 75°C
5 5 25°C
°C
3 25 3

2 2

10 100
1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector Current, IC -- mA IT05494 Collector Current, IC -- mA IT05495
Cob -- VCB fT -- IC
10 7
f=1MHz VCE=2V

Gain-Bandwidth Product, fT -- MHz


5
7
Output Capacitance, Cob -- pF

5
3

2
3

2
100

1.0 5
0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000
Collector-to-Base Voltage, VCB -- V IT05497 Collector Current, IC -- mA IT05496
Ron -- IB PC -- Ta
100 350
7 f=1MHz 1kΩ
5 IN OUT
1kΩ 300
Collector Dissipation, PC -- mW

3 M
2
ou
nt
ON-resistance, Ron -- Ω

IB 250 ed
10 on
7
ag
las
5 200 se
po
3 xy
2 150 bo
ar
d(
20
1.0 ✕
7 100 30

5 1.
6m
3 m
50 )
2

0.1 0
0.1 2 3 5 7 1.0 2 3 5 7 10 0 20 40 60 80 100 120 140 160
Base Current, IB -- mA IT06067 Ambient Temperature, Ta -- °C IT05499

No.7505-3/4
15C01M

Specifications of any and all SANYO products described or contained herein stipulate the performance,
characteristics, and functions of the described products in the independent state, and are not guarantees
of the performance, characteristics, and functions of the described products as mounted in the customer's
products or equipment. To verify symptoms and states that cannot be evaluated in an independent device,
the customer should always evaluate and test devices mounted in the customer's products or equipment.
SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all
semiconductor products fail with some probability. It is possible that these probabilistic failures could
give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,
or that could cause damage to other property. When designing equipment, adopt safety measures so
that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective
circuits and error prevention circuits for safe design, redundant design, and structural design.
In the event that any or all SANYO products(including technical data,services) described or
contained herein are controlled under any of applicable local export control laws and regulations,
such products must not be expor ted without obtaining the expor t license from the authorities
concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system,
or otherwise, without the prior written permission of SANYO Electric Co., Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"
for the SANYO product that you intend to use.
Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not
guaranteed for volume production. SANYO believes information herein is accurate and reliable, but
no guarantees are made or implied regarding its use or any infringements of intellectual property rights
or other rights of third parties.

This catalog provides information as of October, 2003. Specifications and information herein are subject
to change without notice.

PS No.7505-4/4
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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