BSS138

October 2005

BSS138
N-Channel Logic Level Enhancement Mode Field Effect Transistor
General Description Features

These N-Channel enhancement mode field effect • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. These products RDS(ON) = 6.0Ω @ VGS = 4.5 V
have been designed to minimize on-state resistance • High density cell design for extremely low RDS(ON)
while provide rugged, reliable, and fast switching
performance.These products are particularly suited for • Rugged and Reliable
low voltage, low current applications such as small
• Compact industry standard SOT-23 surface mount
servo motor control, power MOSFET gate drivers, and
package
other switching applications.

D D

S
G S

SOT-23
G

Absolute Maximum Ratings TA=25oC unless otherwise noted

Symbol Parameter Ratings Units

VDSS Drain-Source Voltage 50 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current – Continuous (Note 1) 0.22 A
– Pulsed 0.88
PD Maximum Power Dissipation (Note 1) 0.36 W
Derate Above 25°C 2.8 mW/°C
TJ, TSTG Operating and Storage Junction Temperature Range −55 to +150 °C
Maximum Lead Temperature for Soldering
TL 300 °C
Purposes, 1/16” from Case for 10 Seconds

Thermal Characteristics
RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 350 °C/W

Package Marking and Ordering Information

Device Marking Device Reel Size Tape width Quantity
SS BSS138 7’’ 8mm 3000 units

2005 Fairchild Semiconductor Corporation BSS138 Rev C(W)

 BSS138
Electrical Characteristics TA = 25°C unless otherwise noted

Symbol Parameter Test Conditions Min Typ Max Units

Off Characteristics
BVDSS Drain–Source Breakdown Voltage VGS = 0 V, ID = 250 µA 50 V
∆BVDSS Breakdown Voltage Temperature ID = 250 µA,Referenced to 25°C mV/°C
72
∆TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 50 V, VGS = 0 V 0.5 µA
VDS = 50 V, VGS = 0 V TJ = 125°C 5 µA
VDS = 30 V, VGS = 0 V 100 nA
IGSS Gate–Body Leakage. VGS = ±20 V, VDS = 0 V ±100 nA

On Characteristics (Note 2)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA 0.8 1.3 1.5 V
∆VGS(th) Gate Threshold Voltage ID = 1 mA,Referenced to 25°C –2 mV/°C
∆TJ Temperature Coefficient
RDS(on) Static Drain–Source VGS = 10 V, ID = 0.22 A 0.7 3.5 Ω
On–Resistance VGS = 4.5 V, ID = 0.22 A 1.0 6.0
VGS = 10 V, ID = 0.22 A, TJ = 125°C 1.1 5.8
ID(on) On–State Drain Current VGS = 10 V, VDS = 5 V 0.2 A
gFS Forward Transconductance VDS = 10V, ID = 0.22 A 0.12 0.5 S

Dynamic Characteristics
Ciss Input Capacitance VDS = 25 V, V GS = 0 V, 27 pF
Coss Output Capacitance f = 1.0 MHz 13 pF
Crss Reverse Transfer Capacitance 6 pF
RG Gate Resistance VGS = 15 mV, f = 1.0 MHz 9 Ω

Switching Characteristics (Note 2)

td(on) Turn–On Delay Time VDD = 30 V, ID = 0.29 A, 2.5 5 ns
tr Turn–On Rise Time VGS = 10 V, RGEN = 6 Ω 9 18 ns
td(off) Turn–Off Delay Time 20 36 ns
tf Turn–Off Fall Time 7 14 ns
Qg Total Gate Charge VDS = 25 V, ID = 0.22 A, 1.7 2.4 nC
Qgs Gate–Source Charge VGS = 10 V 0.1 nC
Qgd Gate–Drain Charge 0.4 nC

Drain–Source Diode Characteristics and Maximum Ratings

IS Maximum Continuous Drain–Source Diode Forward Current 0.22 A
VSD Drain–Source Diode Forward VGS = 0 V, IS = 0.44 A(Note 2) 0.8 1.4 V
Voltage
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. RθJC is guaranteed by design while RθCA is determined by the user's board design.

a) 350°C/W when mounted on a

minimum pad..

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

BSS138 Rev C(W)

 BSS138
Typical Characteristics

1 3.4
VGS = 10V 6.0V 4.5V
3.5V

DRAIN-SOURCE ON-RESISTANCE
3
0.8 3.0V VGS = 2.5V
ID, DRAIN CURRENT (A)

RDS(ON), NORMALIZED
2.6

0.6
2.2
3.0V
2.5V
1.8 3.5V
0.4
4.0V
4.5V
1.4
6.0V
0.2 2.0V
1 10V

0.6
0
0 0.2 0.4 0.6 0.8 1
0 0.5 1 1.5 2 2.5 3
ID, DRAIN CURRENT (A)
VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

2 4.1
ID = 110mA
DRAIN-SOURCE ON-RESISTANCE

ID = 220mA
RDS(ON), ON-RESISTANCE (OHM)

1.8
VGS = 10V 3.5
RDS(ON), NORMALIZED

1.6
2.9
1.4 TA = 125oC
2.3
1.2
1.7
1
TA = 25oC

0.8 1.1

0.6 0.5
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
o VGS, GATE TO SOURCE VOLTAGE (V)
TJ, JUNCTION TEMPERATURE ( C)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

0.6 1
VDS = 10V VGS = 0V
IS, REVERSE DRAIN CURRENT (A)

o o
TA = -55 C 25 C
0.5
ID, DRAIN CURRENT (A)

125oC 0.1
TA = 125oC
0.4
25oC
0.3 0.01
-55oC
0.2
0.001
0.1

0 0.0001
0.5 1 1.5 2 2.5 3 3.5 0 0.2 0.4 0.6 0.8 1 1.2
VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation

with Source Current and Temperature.

BSS138 Rev C(W)

 BSS138
Typical Characteristics

10 100
f = 1 MHz
ID = 220mA VDS = 8V
VGS, GATE-SOURCE VOLTAGE (V)

25V VGS = 0 V
8 80
30V

CAPACITANCE (pF)
6 60

CISS
4 40

COSS
2 20

CRSS
0 0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 0 10 20 30 40 50

Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

10 5
P(pk), PEAK TRANSIENT POWER (W) SINGLE PULSE
RθJA = 350°C/W
100µs 4 TA = 25°C
ID, DRAIN CURRENT (A)

1
1ms
RDS(ON) LIMIT
10ms
3
100ms
0.1 1s
DC 2
VGS = 10V
0.01 SINGLE PULSE
RθJA = 350oC/W 1
TA = 25oC

0.001 0
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000
VDS, DRAIN-SOURCE VOLTAGE (V) t1, TIME (sec)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum
Power Dissipation.

1
r(t), NORMALIZED EFFECTIVE TRANSIENT

D = 0.5
RθJA(t) = r(t) * RθJA
o
THERMAL RESISTANCE

0.2 RθJA = 350 C/W

0.1 0.1

0.05 P(pk)
0.02 t1
0.01
0.01 t2
TJ - TA = P * RθJA(t)
SINGLE PULSE Duty Cycle, D = t1 / t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 1000
t1, TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in Note 1a.
Transient thermal response will change depending on the circuit board design.

BSS138 Rev C(W)

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PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and

supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. I17