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G80N60UFD FairchildSemiconductor
G80N60UFD FairchildSemiconductor
IGBT
SGH80N60UFD
Ultrafast IGBT
Applications
AC & DC motor controls, general purpose inverters, robotics, and servo controls.
TO-3P E
G C E
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Notes :
(1) Repetitive rating : Pulse width limited by max. junction temperature
Thermal Characteristics
Symbol Parameter Typ. Max. Units
RθJC(IGBT) Thermal Resistance, Junction-to-Case -- 0.64 °C/W
RθJC(DIODE) Thermal Resistance, Junction-to-Case -- 0.83 °C/W
RθJA Thermal Resistance, Junction-to-Ambient -- 40 °C/W
Off Characteristics
BVCES Collector-Emitter Breakdown Voltage VGE = 0V, IC = 250uA 600 -- -- V
∆BVCES/ Temperature Coefficient of Breakdown
VGE = 0V, IC = 1mA -- 0.6 -- V/°C
∆TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0V -- -- 250 uA
IGES G-E Leakage Current VGE = VGES, VCE = 0V -- -- ± 100 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 40mA, VCE = VGE 3.5 4.5 6.5 V
Collector to Emitter IC = 40A, VGE = 15V -- 2.1 2.6 V
VCE(sat)
Saturation Voltage IC = 80A, VGE = 15V -- 2.6 -- V
Dynamic Characteristics
Cies Input Capacitance -- 2790 -- pF
VCE = 30V, VGE = 0V,
Coes Output Capacitance -- 350 -- pF
f = 1MHz
Cres Reverse Transfer Capacitance -- 100 -- pF
Switching Characteristics
td(on) Turn-On Delay Time -- 23 -- ns
tr Rise Time -- 50 -- ns
td(off) Turn-Off Delay Time VCC = 300 V, IC = 40A, -- 90 130 ns
tf Fall Time RG = 5Ω, VGE = 15V, -- 50 150 ns
Eon Turn-On Switching Loss Inductive Load, TC = 25°C -- 570 -- uJ
Eoff Turn-Off Switching Loss -- 590 -- uJ
Ets Total Switching Loss -- 1160 1500 uJ
td(on) Turn-On Delay Time -- 30 -- ns
tr Rise Time -- 55 -- ns
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60
100
40
50
20
0 0
0 2 4 6 8 0.5 1 10
4 60
V CC = 300V
Common Emitter
Load Current : peak of square wave
VGE = 15V
Collector - Emitter Voltage, VCE [V]
50
3 80A
Load Current [A]
40
40A
2 30
IC = 20A 20
1
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10
Duty cycle : 50%
TC = 100℃
Power Dissipation = 60W
0 0
0 30 60 90 120 150 0.1 1 10 100 1000
Fig 3. Saturation Voltage vs. Case Fig 4. Load Current vs. Frequency
Temperature at Variant Current Level
20 20
Common Emitter Common Emitter
T C = 25℃ T C = 125℃
Collector - Emitter Voltage, VCE [V]
16 16
12 12
8 8
80A
4 80A 4
40A 40A
IC = 20A IC = 20A
0 0
0 4 8 12 16 20 0 4 8 12 16 20
Fig 5. Saturation Voltage vs. VGE Fig 6. Saturation Voltage vs. VGE
3000
1500
Coes
1000
500 Cres
0 20
1 10 30 1 10 70
2000 5000
Common Emitter Common Emitter
VCC = 300V, VGE = ± 15V V CC = 300V, V GE = ± 15V
1000 IC = 40A IC = 40A
TC = 25℃ T C = 25℃
Toff
TC = 125℃ T C = 125℃
Switching Time [ns]
Eoff
Switching Loss [uJ]
Eon
1000
Tf Eoff
100
Tf
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20 100
1 10 80 1 10 80
Fig 9. Turn-Off Characteristics vs. Fig 10. Switching Loss vs. Gate Resistance
Gate Resistance
500 2000
Common Emitter Common Emitter
VCC = 300V, V GE = ± 15V V CC = 300V, V GE = ± 15V
1000
RG = 5Ω R G = 5Ω
TC = 25℃ T C = 25℃
Switching Time [ns]
TC = 125℃ T C = 125℃
Switching Time [ns]
Toff
100
Tf
Toff
100
Ton
Tf
Tr
10 20
10 20 30 40 50 60 70 80 10 20 30 40 50 60 70 80
Fig 11. Turn-On Characteristics vs. Fig 12. Turn-Off Characteristics vs.
Collector Current Collector Current
©2002 Fairchild Semiconductor Corporation SGH80N60UFD Rev. B1
300 V
Eoff
100 6
V CC = 100 V 200 V
Common Emitter
Eon V CC = 300V, V GE = ± 15V
RG = 5Ω 3
T C = 25℃
T C = 125℃
10 0
0 10 20 30 40 50 60 70 80 0 30 60 90 120 150 180
Fig 13. Switching Loss vs. Collector Current Fig 14. Gate Charge Characteristics
500 500
IC MAX. (Pulsed)
100
IC MAX. (Continuous) 50us 100
Collector Current, IC [A]
100us
1㎳
10
DC Operation
10
Single Nonrepetitive
1
Pulse TC = 25℃ www.DataSheet.net/
0.5
Thermal Response, Zthjc [℃/W]
0.2
0.1
0.1
0.05
0.02
0.01
0.01 Pdm
t1
single pulse
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
1E-3
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10
10
10
1 1
0 1 2 3 100 1000
1000 120
V R = 200V VR = 200V
IF = 25A
Stored Recovery Charge, Qrr [nC]
IF = 25A
T C = 25℃ TC = 25℃
800 100
Reverce Recovery Time, t rr [ns]
T C = 100℃ TC = 100℃
600 80
400 60
200 www.DataSheet.net/
40
0 20
100 1000 100 1000
TO-3P
15.60 ±0.20
4.80 ±0.20
13.60 ±0.20
3.80 ±0.20
ø3.20 ±0.10 +0.15
9.60 ±0.20 1.50 –0.05
18.70 ±0.20
12.76 ±0.20
19.90 ±0.20
23.40 ±0.20
13.90 ±0.20
2.00 ±0.20
3.50 ±0.20
+0.15
0.60 –0.05
5.45TYP 5.45TYP
[5.45 ±0.30] [5.45 ±0.30]
Dimensions in Millimeters
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
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the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I1