2SC3336

Silicon NPN Triple Diffused

ADE-208-891 (Z)
1st. Edition
Sep. 2000

Application

High voltage, high speed and high power switching

Outline

TO-3P

1. Base
2. Collector
(Flange)
3. Emitter

1
2
3
2SC3336

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit
Collector to base voltage VCBO 500 V
Collector to emitter voltage VCEO 400 V
Emitter to base voltage VEBO 10 V
Collector current IC 15 A
Collector peak current I C(peak) 25 A
Base current IB 7.5 A
1
Collector power dissipation PC * 100 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test conditions
Collector to emitter sustain VCEO(sus) 400 — — V I C = 0.2 A, RBE = ∞, L = 100 mH
voltage VCEX(sus) 400 — — V I C = 15 A, IB1 = 3.0 A, IB2 = –1 A
VBE = –5.0 V, L = 180 µH,
Clamped
Emitter to base breakdown V(BR)EBO 10 — — V I E = 10 mA, IC = 0
voltage
Collector cutoff current I CBO — — 50 µA VCB = 400 V, IE = 0
I CEO — — 50 µA VCE = 350 V, RBE = ∞
DC current transfer ratio hFE1 12 — — VCE = 5.0 V, IC = 7.5 A*1
hFE2 5 — — VCE = 5.0 V, IC = 15 A*1
Collector to emitter saturation VCE(sat) — — 1.0 V I C = 7.5 A, IB = 1.5 A*1
voltage
Base to emitter saturation VBE(sat) — — 1.5 V
voltage
Turn on time t on — — 0.5 µs I C = 15 A, IB1 = –IB2 = 3.0 A
Storage time t stg — — 1.5 µs VCC ≅ = 150 V
Fall time tf — 0.3 0.5 µs
Note: 1. Pulse test

2
 2SC3336

Maximum Collector Dissipation

Curve
Area of Safe Operation
150
100
Collector power dissipation PC (W)

iC(peak)
30

Collector current IC (A)

25 0 µs s
10 IC(max)

5
µs
25
100

0
PW
1 m 10 m
3

µ
s
=
DC = 25
1.0

TC
Op °C

s
era
50 0.3

tio
Ta = 25°C, 1 Shot
0.1

n
0.03

0.01
0 50 100 150 1 3 10 30 100 300 1,000
Case temperature TC (°C) Collector to emitter voltage VCE (V)

Transient Thermal Resistance

Collector Current Derating Rate 10
100
Thermal resistance θj-c (°C/W)

3
Collector current derating rate (%)

TC = 25°C
80 IS
/B 1.0
Lim 10 ms–10 s
it A
60 re
a 0.3
s
0m
µs–1
0.1 10
40

0.03
20
0.01
0.01 0.1 1.0 10 (s)
0 50 100 150 0.01 0.1 1.0 10 (ms)
Case temperature TC (°C) Time t

3
2SC3336

Collector to Emitter Voltage vs.

Reverse Bias Area of Safe Operation Base to Emitter Resistance
25 600

Collector to emitter voltage VCER (V)

300 V
25 A IC = 1 mA
20
Collector current IC (A)

500
400 V
15 15 A

10
400
450 V
5 3.5 A
IB2 = –1 A

300
0 100 200 300 400 500 100 1k 10 k 100 k 1M
Collector to emitter voltage VCE (V) Base to emitter resistance RBE (Ω)

Typical Output Characteristecs Typical Transfer Characteristics

10 10
8 TC = 25°C
0.
1.0

VCE = 5 V
0.6
8 8
Collector current IC (A)
Collector current IC (A)

0.4
6 6

0.2
4 4
0.1 A

2 2
TC = 25°C
IB = 0

0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2.0

Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

4
 2SC3336

DC Current Transfer Ratio vs. Collector to Emitter Saturation

Collector Current Voltage vs. Base Current
100 10

Collector to emitter saturation voltage

75°C
DC current transfer ratio hFE

3
5A
30 25°C
1.0
5°C
T C = –2

VCE(sat) (V)
2A
10 0.3
IC = 1 A
0.1
3
0.03
VCE = 5 V
TC = 25°C
1 0.01
0.02 0.1 0.3 1.0 3 10 20 0.01 0.03 0.1 0.3 1.0 3 10
Collector current IC (A) Base current IB (A)

Saturation Voltage vs.

Collector Current Switching Time vs. Collector Current
Collector to emitter saturation voltage VCE(sat) (V)
Base to emitter saturation voltage VBE(sat) (V)

10 10
IC = 5 IB
TC = 25°C
3 3 tstg
Switching time t (µs)

1.0 VBE(sat) 1.0

0.3 0.3 tf
VCE(sat)
0.1 0.1 ton

0.03 0.03 VCC = 150 V

IC = 5 IB1 = –5 IB2
0.01 0.01
0.02 0.1 0.3 1.0 3 10 20 0.01 0.1 0.3 1.0 3 10 20
Collector current IC (A) Collector current IC (A)

5
2SC3336

Switching Time vs. Case Temperature

5

Switching time t (µs)

1.0 tstg

tf

0.3 ton

IC = 15 A
IB1 = – IB2 = 3 A
0.1
RL = 10 Ω
VCC = 150 V
0.05
0 25 50 75 100 125
Case temperature TC (°C)

6
 2SC3336

Package Dimensions

Unit: mm

5.0 ± 0.3
15.6 ± 0.3 4.8 ± 0.2
φ3.2 ± 0.2 1.5

1.0
0.5

19.9 ± 0.2
14.9 ± 0.2

0.3
2.0

1.6

1.4 Max 2.0

2.8
18.0 ± 0.5

1.0 ± 0.2 0.6 ± 0.2

3.6 0.9
1.0

5.45 ± 0.5 5.45 ± 0.5

Hitachi Code TO-3P
JEDEC —
EIAJ Conforms
Mass (reference value) 5.0 g

7
2SC3336

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.

Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL NorthAmerica : http://semiconductor.hitachi.com/
Europe : http://www.hitachi-eu.com/hel/ecg
Asia : http://sicapac.hitachi-asia.com
Japan : http://www.hitachi.co.jp/Sicd/indx.htm
For further information write to:
Hitachi Semiconductor Hitachi Europe GmbH Hitachi Asia Ltd. Hitachi Asia (Hong Kong) Ltd.
(America) Inc. Electronic Components Group Hitachi Tower Group III (Electronic Components)
179 East Tasman Drive, Dornacher Straβe 3 16 Collyer Quay #20-00, 7/F., North Tower,
San Jose,CA 95134 D-85622 Feldkirchen, Munich Singapore 049318 World Finance Centre,
Tel: <1> (408) 433-1990 Germany Tel : <65>-538-6533/538-8577 Harbour City, Canton Road
Fax: <1>(408) 433-0223 Tel: <49> (89) 9 9180-0 Fax : <65>-538-6933/538-3877 Tsim Sha Tsui, Kowloon,
Fax: <49> (89) 9 29 30 00 URL : http://www.hitachi.com.sg Hong Kong
Hitachi Europe Ltd. Tel : <852>-(2)-735-9218
Hitachi Asia Ltd.
Fax : <852>-(2)-730-0281
Electronic Components Group. (Taipei Branch Office)
Whitebrook Park URL : http://www.hitachi.com.hk
4/F, No. 167, Tun Hwa North Road,
Lower Cookham Road Hung-Kuo Building,
Maidenhead Taipei (105), Taiwan
Berkshire SL6 8YA, United Kingdom Tel : <886>-(2)-2718-3666
Tel: <44> (1628) 585000 Fax : <886>-(2)-2718-8180
Fax: <44> (1628) 585160 Telex : 23222 HAS-TP
URL : http://www.hitachi.com.tw
Copyright  Hitachi, Ltd., 2000. All rights reserved. Printed in Japan.
Colophon 2.0