1SS133

Diodes

Switching diode
1SS133

zApplications zExternal dimensions (Unit : mm)

High speed switching
CATHODE BAND (YELLOW)

φ0.40.1
zFeatures
1) Glass sealed envelope. (MSD)
2) High reliability. 291 2.70.3 291
φ1.80.2

ROHM : MSD
zConstruction JEDEC : DO-34
Silicon epitaxial planar
zTaping specifications (Unit : mm)
IVORY

H2 A H2 寸法規格値
BLUE 記号
Mark
Standard dimension
(mm)
value (mm)
E
I T-72 52.4±1.5
Ａ T-77 26.0+0.4
'-0
B
Ｂ 5.0±0.5
Ｃ 0.5ＭＡＸ
C Ｄ 0
Ｅ 50.4±0.4
Ｆ 0.3ＭＡＸ
G1 0.1ＭＩＮ
G2 0ＭＩＮ
H1 6.0±0.5
H2 5.0±0.5
I 0.5ＭＡＸ
L1 L2 L1-L2 0.6ＭＡＸ
t 3.2MIN
F D
H1 H1
G1 G2 t ＊H2(6mm)：BROWN

cf : 注)　累積ピッチの許容差は20ピッチで±1.5mm以下とする
cumulativ e pitch tolerance with 20 pitch than ±1.5mm

zAbsolute maximum ratings (Ta=25°C)

Parameter Symbol Limits Unit
Reverse voltage (repetitive peak) VRM 90 V
Reverse voltage (DC) VR 80 V
Forward voltage (repetitive peak) IFM 400 mA
Average rectified forward current Io 130 mA
Surge current (1s) Isurge 600 mA
Power dissipation P 300 mW
Junction temperature Tj 175 ℃
Storage temperature Tstg -65 to 175 ℃

zElectrical characteristics (Ta=25°C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Forward voltage VF - - 1.2 V IF=100mA
Reverse current IR - - 0.5 µA VR=80V
Capacitance between terminal Ct - - 2 pF VR=0.5V , f=1MHz
Reverse recovery time Trr - - 4.0 ns VR=6V,IF=10mA,RL=50Ω,Irr=1/10 IR

Rev.B 1/3
 1SS133
Diodes

zElectrical characteristics curves (Ta=25°C)

100 1000000 10
Ta=75℃ Ta=175℃ f=1MHz
100000
FORWARD CURRENT:IF(mA)

REVERSE CURRENT:IR(nA)
Ta=125℃

CAPACITANCE BETWEEN
Ta=125℃
Ta=25℃ 10000

TERMINALS:Ct(pF)
10
Ta=175℃ Ta=-25℃ 1000 Ta=75℃
1
100
Ta=25℃
1
10
Ta=-25℃
1

0.1 0.1 0.1

0 0.2 0.4 0.6 0.8 1 1.2 0 10 20 30 40 50 60 70 80 0 10 20 30
FORWARD VOLTAGE：VF(V) REVERSE VOLTAGE：VR(V) REVERSE VOLTAGE:VR(V)
VF-IF CHARACTERISTICS VR-IR CHARACTERISTICS VR-Ct CHARACTERISTICS

950 100 1
Ta=25℃ Ta=25℃ 0.9 Ta=25℃
90
IF=100mA VR=80V VR=0.5V
FORWARD VOLTAGE:VF(mV)

940 80 0.8 f=1MHz

REVERSE CURRENT:IR(nA)

n=30pcs

CAPACITANCE BETWEEN
n=30pcs
0.7 n=10pcs
70

TERMINALS:Ct(pF)
930 60 0.6 AVE:0.803pF
50 0.5

920 40 AVE:21.3nA 0.4

AVE:925.7mV 30 0.3

910 20 0.2

10 0.1

900 0 0

VF DISPERSION MAP IR DISPERSION MAP Ct DISPERSION MAP

20 3 20
Ta=25℃
RESERVE RECOVERY TIME:trr(ns)

Ifsm 1cyc VR=6V

FORWARD CURRENT:IFSM(A)

FORWARD CURRENT:IFSM(A)

2.5 Ifsm
IF=10mA
15 15
RL=50Ω 8.3ms 8.3ms
8.3ms 2 n=10pcs
PEAK SURGE

PEAK SURGE

1cyc
10 1.5 10

AVE:11.6A 1
AVE:1.46ns
5 5
0.5

0 0 0
1 10 100
IFSM DISRESION MAP trr DISPERSION MAP NUMBER OF CYCLES
IFSM-CYCLE CHARACTERISTICS

Mounted on epoxy board

100 1000 IM=1mA IF=50mA 0.20
THAERMAL IMPEDANCE:Rth (℃/W)

Rth(j-a)
FORWARD CURRENT:IFSM(A)

Ifsm 1ms time

t DC
D=1/2
DISSIPATION:PR (W)

300us
REVERSE POWER
PEAK SURGE

Rth(j-l)
TRANSIENT

Sin(θ＝180)
10 100 0.10
Rth(j-c)

1 10 0.00
0.1 1 10 100 0.001 0.01 0.1 1 10 100 1000 0.00 0.05 0.10 0.15 0.20
TIME:t(ms) TIME:t(s) REVERSE VOLTAGE:VR(V)
IFSM-t CHARACTERISTICS Rth-t CHARACTERISTICS VR-PR CHARACTERISTICS

Rev.B 2/3
 1SS133
Diodes

0.20 0.20 20

DC DC
FORWARD CURRENT:Io(A)

FORWARD CURRENT:Io(A)

DISCHARGE TEST ESD(KV)

15
AVERAGE RECTIFIED

0.15 0.15

AVERAGE RECTIFIED
D=1/2 D=1/2

ELECTROSTATIC
AVE:7.4kV
0.10 0.10 10

AVE:2.2kV
0A Io Io
0A
0.05 0V VR 0.05 0V 5
t VR Sin(θ＝180)
D=t/T t
Sin(θ＝180) D=t/T
VR=40V VR=40V
T Tj=175℃
T Tj=175℃
0.00 0.00 0 C=200pF C=100pF
R=0Ω R=1.5kΩ
0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE:Ta(℃) CASE TEMPARATURE:Tc(℃)
Derating Curveﾞ(Io-Ta) Derating Curveﾞ(Io-Tc) ESD DISPERSION MAP

Rev.B 3/3
Appendix

Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
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ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.

The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
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safety devices), please be sure to consult with our sales representative in advance.

About Export Control Order in Japan

Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.

Appendix1-Rev1.1