| STUDENT ID NO MULTIMEDIA @@W UNIVERSITY = MULTIMEDIA UNIVERSITY FIRST TRIMESTER EXAMINATION, 2002/2003 SESSI SUPPLEMENTARY EEN1016 ELECTRONIC I (ALL GROUPS) 278 2 =MBER 2002 9.00 am -11.00 am (2 Hours) INSTRUCTION TO STUDENT 1, This Question paper consists of 7 pages including cover page with 6 Questions only 2. Attempt the ONLY question from SECTION A and THREE out of FIVE questions from SECTION B. All questions carry equal marks and the distribution of the marks for each question is given. 3. Please print all your answers in the answer Booklet provided.EENIONG ELECTRONICS | SEPTEMBER 2002 SECTION A: Attempt ALL parts in the following que Question 1: (a) Ata certain temperature, an unknown intrinsic semiconductor has the following properties: Intrinsic concentration, n; = 1.5 x 10eny" resistivity, p = 694.44Qcm mobility of electron = 5 x mobility of hole Determine the mobility of electron and hole at that temperature [5 marks] (b) Find the operating temperature of a diode if the forward current is 200 times higher than the reverse saturation current for a forward-bias voltage of 0.3V. Assume an emission coefficient of 2 [5 marks} (©) For the circuit shown in Figure QI(c), sketch two cycles of the voltage waveforms at V1 and Vo against the input voltage Vs. Indicate on the sketches the maximum and minimum voltages. Assume ideal diode and steady state operation [5 marks} 3 “only 2 cycles ate shown Figure QI(c) (@) i, What are the different operation regions in a BJT? [1.5 marks] ii, State the reason why in an npn transistor when Vcc>Van>Vee, the value of Icis linearly response to the changes of In? (3.5 marks] (©) Describe the advantages, disadvantages, and the application of the fixed-bias with emitter resistor circuit shown in Figure QI(e). (5 marks] Figure Qi(e): Emitter feedback bias circuit WHT/IHSLIMRBALAGMSSIMD_ 27EENIOI6 ELECTRONICS | SEPTEMBER 2002 SECTION B: Attempt any THREE out of FIVE questions Question 2: @) i, What is the band-gap energy and explain how it determines the electrical properties of solids? (6 marks} i, What is the difference between drift and diffusion processes? [4 marks] (b) At room temperature the intrinsic-carrier concentration of germanium is 2x1030m, consider a germanium specimen that has a donor concentration of Np=5x10!4em"S and no acceptors. (e = 1.60% 107!9), i. Determine the hole and electron concentrations, [4 marks] "i. Determine the mobilities of holes and electrons ifthe mobility of a hole is quarter that ofan electron, where the conductivity of germanium specimen equals to 0.2561Scm"! [8 marks] 1H Calculate the drift current density in the germanium specimen if the applied electric field is 0.075Vmm'!? [3 marks] Question 3: (@) Briefly describe the formation of potential barrier within a PN junction diode at thermal equilibrium, [6 marks] (b) State the change in the width of the depletion region and give the reason for this change when the diode is i. forward-biased (2 marks} ii. reverse-biased [2 marks] ©) The reverse saturation current Ip ofa silicon diode at room temperature [27°C] is 0.14A. Assume that the ideality factor is 2. i Determine the required reverse-bias voltage for a reverse current of 80nA at room temperature [3 marks] 4h If the diode reverse saturation current doubles for every 10°C rise in temperature determine the forward current for a forward-bias voltage of 0.5V at 100°C [6 marks] (@) The voltage regulator in Figure Q3() is designed to provide a constant voltage V2"4.7¥ to a load Ry. varying between 2000 to 1.6k2. The unregulated voltage source Vs varies between 1OV to 15V, Determine the required zener knee current and power rating of the zener diode. [6 marks] 2002 I tL Continued .. HSLMRBTAGINSSIMD 37 wanENON ELECTRONICS | SEPTEMBER 2002 Question 4: (a) In Figure Q4(a), a step-down transformer is connected to a single phase full-wave bridge rectifier to drive a load equivalent of 820. The Rms voltage across the secondary winding is 18V. Assume that the cut in voltage of the diode is OV. Calculate, i, Average output voltage, Voves (2 marks] ii, Ripple voltage peak-peak, Viipp [2 marks] iii, Rms ripple voltage, Veins) [2 marks} iv. Ripple factor, y [2 marks] (b) If'a 470 UF capacitor is added parallel to the load resistance in Figure Q4(a), find the new value of: i, Average output voltage, Vee [2 marks] ii, Ripple voltage, Vip) (2 marks] iii, Rms ripple voltage, Viens [2 marks] iv. Ripple factor, y [2 marks} (©) Ifa saw-tooth wave of 20V peak-to-peak, as shown in Figure Q4(b), is fed into circuit in Figure Q4(c) and Figure Q4(d), determine the output Vo, for each case. Assume that the circuits are utilizing ideal diodes, and CR>>T {9 marks] v | on tm RL t s202 Vo lov o— Figure Q4(a) Figure Q4(b) o—l€ x + + IKQ Re yo Ke S V, Vo sv _ _ oO oO Figure Q4(c) Figure Q4(d) Continued ....... WHTHSUNREAAGMSSIMD a7EENIOI6 ELECTRONICS | ‘SEPTEMBER 2002 Question 5: For the circuit shown in Figure QS, the transistor parameters are: (B80, Isi=5x10A, and Ig2=10"A, if J = Ls exp(V ge /V), Vr= 0.0259V and the circuit biased with the constant current source Ig= ImA. a, Specify the type of transistors QI and Q2. [1 mark] b. Specify the types of biasing for each transistor and explain why. [6 marks) c. Explain which transistor controls the current of the other transistor. [2 marks] d. Determine the current Ico. [8 marks] ¢, Determine the voltage Vet [4 marks] f. Determine the voltage Ves2 [4 marks} 45v Verso @ ¥ le Qi J,=ImA av Figure QS Continued ... WHT/HSUMRBMAGMSSMD S/TEENLOI6 ELECTRONICS 1 Question 6: (a) Compare the common base and common collector configurations of BJT circuits in terms of current gain and voltage gain, input resistance and output resistance. [8 marks} (b) Figure Q6(b) shows a common base amplifier system. If ry is 0, B = 100 and V=26mV, i, Determine the gm and r, parameter [4 marks] ii, Draw the small signal equivalent circuit [3 marks] iii, Find the input impedance, Rj (2 marks] iv. Find the output impedance, R, (2 marks] v. Find the effective current gain Ais,lo/li [3 marks] vi. Find the effective voltage gain Ays,Vo/Vi (3 marks] Ve Rv av Figure Q6(b) End of paper WATHSUMRBIHAGINSSIND o7EENIOIS ELECTRONICS 1 APPENDIX Table of Constants: Plank’s constant, ft Boltzman constant, & Electron charge, ¢ Avogrado's number, Na Velocity of light, ¢ Semiconductor material properties: Ge Si Atomic density 4.4 x 107 5.0 10 Eo 0.67 Li ny 2.5.x 10% 15x 10" Lp 3800 1300 bp 1800 500 *All values at 300K WATIHSLIMRBIAGMSS/MD - TT SEPTEMBER 2002 6.626 x 10™ Is 1.38 x 107 WK 1.60 x 10°C 6.023 x 10” molecules/mole 2.97 x 10° m/s, GaAs Unit 4.42 x 107 atom/em? 1.43 ev 1.8 x 10° cm? 8500 em/Vs 400 om’/Vs