AP9440GYT-HF

Halogen-Free Product
Advanced Power N-CHANNEL ENHANCEMENT MODE
Electronics Corp. POWER MOSFET

▼ Capable of 2.5V Gate Drive D BVDSS 20V

▼ Small Size & Lower Profile RDS(ON) 3.7mΩ
▼ RoHS Compliant & Halogen-Free ID 23.4A
G
S
D
Description D
D
AP9440 series are from Advanced Power innovated design and silicon D
process technology to achieve the lowest possible on-resistance and fast
switching performance. It provides the designer with an extreme efficient
device for use in a wide range of power applications.
S
The PMPAK ® 3x3 package is special for voltage conversion application S
using standard infrared reflow technique with the backside heat sink to S
G
achieve the good thermal performance.
PMPAK ® 3x3

Absolute Maximum Ratings

Symbol Parameter Rating Units
VDS Drain-Source Voltage 20 V
VGS Gate-Source Voltage +12 V
3
ID@TA=25℃ Continuous Drain Current 23.4 A
3
ID@TA=70℃ Continuous Drain Current 18.7 A
1
IDM Pulsed Drain Current 60 A
PD@TA=25℃ Total Power Dissipation 3.13 W
TSTG Storage Temperature Range -55 to 150 ℃
TJ Operating Junction Temperature Range -55 to 150 ℃

Thermal Data
Symbol Parameter Value Unit
Rthj-c Maximum Thermal Resistance, Junction-case 5 ℃/W
Rthj-a Maximum Thermal Resistance, Junction-ambient 3 40 ℃/W

Data and specifications subject to change without notice 1

201301021
AP9440GYT-HF

Electrical Characteristics@Tj=25oC(unless otherwise specified)

Symbol Parameter Test Conditions Min. Typ. Max. Units
BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250uA 20 - - V
2
RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=20A - - 3.7 mΩ
VGS=2.5V, ID=12A - - 5 mΩ
VGS(th) Gate Threshold Voltage VDS=10V, ID=1mA 0.5 - 1.2 V
gfs Forward Transconductance VDS=5V, ID=12A - 48 - S
IDSS Drain-Source Leakage Current VDS=16V, VGS=0V - - 10 uA
IGSS Gate-Source Leakage VGS=+12V, VDS=0V - - +100 nA
Qg Total Gate Charge ID=12A - 48 77 nC
Qgs Gate-Source Charge VDS=10V - 5 - nC
Qgd Gate-Drain ("Miller") Charge VGS=4.5V - 16 - nC
td(on) Turn-on Delay Time VDS=10V - 14 - ns
tr Rise Time ID=1A - 16 - ns
td(off) Turn-off Delay Time RG=3.3Ω - 100 - ns
tf Fall Time VGS=10V - 54 - ns
Ciss Input Capacitance VGS=0V - 4340 6950 pF
Coss Output Capacitance VDS=10V - 540 - pF
Crss Reverse Transfer Capacitance f=1.0MHz - 490 - pF
Rg Gate Resistance f=1.0MHz - 7.2 14.4 Ω

Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
IS Continuous Source Current ( Body Diode ) - - 3 A
2
VSD Forward On Voltage IS=2.6A, VGS=0V - - 1.2 V
trr Reverse Recovery Time IS=10A, VGS=0V, - 23 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 13 - nC

Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 2oz copper pad of FR4 board, t <10sec ; 210oC/W when mounted on min. copper pad.

THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.

USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE

RELIABILITY, FUNCTION OR DESIGN.

2
 AP9440GYT-HF

60 60

T A =25 o C 5.0V T A = 150 o C 5.0V

4.5V 4.5V
50 50
3.5V 3.5V
2.5V 2.5V
ID , Drain Current (A)

ID , Drain Current (A)

40 V G = 1.8V 40 V G = 1.8V

30 30

20 20

10 10

0 0
0 0 1 1 2 2 0 1 2 3 4 5 6

V DS , Drain-to-Source Voltage (V) V DS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

6 1.8

I D = 12 A I D =20A
T A =25 ℃ V G =4.5V
1.6

5
Normalized RDS(ON)

1.4
RDS(ON) (mΩ)

4 1.2

1.0

0.8

2 0.6
1 2 3 4 5 -50 0 50 100 150

V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o

Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance

v.s. Junction Temperature
20 2.0

I D =1mA

16 1.6
Normalized VGS(th)
IS(A)

12 1.2

T j =150 o C T j =25 o C

8 0.8

4 0.4

0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150

o
V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C)

Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s.

Reverse Diode Junction Temperature

3
AP9440GYT-HF

6000
f=1.0MHz
5

I D = 12 A
V DS =10V 5000
VGS , Gate to Source Voltage (V)

4000 C iss

C (pF)
3

3000

2000

1
1000
C oss
C rss
0 0
0 10 20 30 40 50 60 1 5 9 13 17 21 25

Q G , Total Gate Charge (nC) V DS , Drain-to-Source Voltage (V)

Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics

100 1

Duty factor=0.5
Operation in this
100us
Normalized Thermal Response (Rthja)

area limited by
RDS(ON)
0.2
10
1ms
0.1
0.1

10ms
ID (A)

0.05

1
100ms 0.02

0.01 PDM
0.01 t
T
0.1
1s
Duty factor = t/T
T A =25 o C DC Peak Tj = PDM x Rthja + T a
Single Pulse
Rthia=210 ℃/W
Single Pulse
0.01 0.001
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1000

V DS , Drain-to-Source Voltage (V) t , Pulse Width (s)

Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance

32

VG

24
QG
ID , Drain Current (A)

4.5V

16 QGS QGD

Charge Q
0
25 50 75 100 125 150

T A , Ambient Temperature ( o C )

Fig 11. Maximum Continuous Drain Fig 12. Gate Charge Waveform
Current v.s. Ambient Temperature