TK13A65U

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (DTMOS II)

TK13A65U
Switching Regulator Applications
Unit: mm
2.7 ± 0.2
Ф3.2 ± 0.2 10 ± 0.3
A
• Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.)

3.9 3.0
• High forward transfer admittance: ⎪Yfs⎪ = 8.0 S (typ.)

15.0 ± 0.3
• Low leakage current: IDSS = 100 μA (max) (VDS = 650 V)
• Enhancement-mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)
1.14 ± 0.15

Absolute Maximum Ratings (Ta = 25°C)

2.8 MAX.

13 ± 0.5
0.69 ± 0.15
Characteristics Symbol Rating Unit Ф0.2 M A

2.54 2.54
Drain-source voltage VDSS 650 V

2.6 ± 0.1
1 2 3
Gate-source voltage VGSS ±30 V

0.64 ± 0.15

4.5 ± 0.2
DC (Note 1) ID 13
Drain current A
Pulse (Note 1) IDP 26
Drain power dissipation (Tc = 25°C) PD 40 W 1: Gate
2: Drain
Single pulse avalanche energy 3: Source
EAS 86 mJ
(Note 2)
JEDEC ⎯
Avalanche current IAR 13 A
Repetitive avalanche energy (Note 3) EAR 4.0 mJ JEITA SC-67

Channel temperature Tch 150 °C TOSHIBA 2-10U1B

Storage temperature range Tstg −55 to 150 °C Weight : 1.7 g (typ.)

Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).

Thermal Characteristics Internal Connection

Characteristics Symbol Max Unit

2
Thermal resistance, channel to case Rth (ch-c) 3.125 °C/W
Thermal resistance, channel to ambient Rth (ch-a) 62.5 °C/W

Note 1: Please use devices on conditions that the channel temperature is below 150°C.

Note 2: VDD = 90 V, Tch = 25 °C (initial), L = 0.9 mH, RG = 25 Ω, IAR = 13 A 1

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic sensitive device. Please handle with caution.

Start of commercial production

2009-03
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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGSS VGS = ±30 V, VDS = 0 V ⎯ ⎯ ±1 μA

Drain cut-off current IDSS VDS = 650 V, VGS = 0 V ⎯ ⎯ 100 μA
Drain-source breakdown voltage V (BR) DSS ID = 10 mA, VGS = 0 V 650 ⎯ ⎯ V
Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 3.0 ⎯ 5.0 V
Drain-source ON resistance RDS (ON) VGS = 10 V, ID = 6.5 A ⎯ 0.32 0.38 Ω
Forward transfer admittance |Yfs| VDS = 10 V, ID = 6.5 A 2.0 8.0 ― S
Input capacitance Ciss ― 950 ―
Reverse transfer capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz ― 47 ― pF

Output capacitance Coss ― 2300 ―

Rise time tr 10 V ID = 6.5 A VOUT ⎯ 30 ⎯

VGS
0V
Turn-ON time ton
RL = 31 Ω
⎯ 65 ⎯
Switching time 50 Ω ns
Fall time tf ⎯ 8 ⎯
VDD ≈ 200 V
Turn-OFF time toff Duty ≤ 1%, tw = 10 μs ⎯ 80 ⎯

Total gate charge Qg ⎯ 17 ⎯

Gate-source charge Qgs VDD ≈ 400 V, VGS = 10 V, ID = 13 A ⎯ 10 ⎯ nC

Gate-drain charge Qgd ⎯ 7 ⎯

Source-Drain Ratings and Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Continuous drain reverse current (Note 1) IDR ⎯ ⎯ ⎯ 13 A

Pulse drain reverse current (Note 1) IDRP ⎯ ⎯ ⎯ 26 A

Forward voltage (diode) VDSF IDR = 13 A, VGS = 0 V ⎯ ⎯ −1.7 V
Reverse recovery time trr IDR = 13 A, VGS = 0 V, ⎯ 430 ⎯ ns
Reverse recovery charge Qrr dIDR/dt = 100 A/μs ⎯ 7.0 ⎯ μC

Marking
Note 4 : A line under a Lot No. identifies the indication of product Labels
[[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]

Please contact your TOSHIBA sales representative for details as to

Part No. environmental matters such as the RoHS compatibility of Product.
(or abbreviation code) The RoHS is Directive 2011/65/EU of the European Parliament and
K13A65U
Lot No. of the Council of 8 June 2011 on the restriction of the use of certain
hazardous substances in electrical and electronic equipment
Note 4

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ID – VDS ID – VDS
15 25
Common source 10 8 7.5
10 8
Tc = 25°C
Pulse test Common source
12 7.3 20
Tc = 25°C
(A)

(A)
Pulse test
7.5
ID

ID
9 7 15
7.3
Drain current

Drain current
6.8
6 10 7

6.5

6.5
3 5
VGS = 6 V
VGS = 6 V

0 0
0 2 4 6 8 10 0 10 20 30 40 50

Drain−source voltage VDS (V) Drain−source voltage VDS (V)

ID – VGS VDS – VGS

20 10
Common source Common source
VDS = 10 V Tc = 25°C
VDS (V)

Pulse test Pulse test

16 8
(A)
ID

12 6
Drain−source voltage
Drain current

ID = 13 A

8 4
100

25 Tc = −55°C 6.5
4 2
3.3

0 0
0 2 4 6 8 10 0 4 8 12 16 20

Gate−source voltage VGS (V) Gate−source voltage VGS (V)

⎪Yfs⎪ − ID RDS (ON) − ID

100 10
Common source Common source
VDS = 10 V Tc = 25°C
Pulse test
Drain−source ON-resistance
Forward transfer admittance

Pulse test

Tc = −55°C
10
RDS (ON) (Ω)
⎪Yfs⎪ (S)

25 1
100

1
VGS = 10 V

0.1 0.1
0.1 1 10 100 0.1 1 10 100

Drain current ID (A) Drain current ID (A)

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RDS (ON) – Tc IDR − VDS

1.5 100
Common source Common source
VGS = 10 V Tc = 25°C

(A)
Pulse test
Drain−source ON-resistance

1.2 Pulse test

IDR
10
RDS (ON) (Ω)

Drain reverse current

0.9
6.5

13
0.6
10
1
ID = 3.3 A

0.3 5

3
1 VGS = 0 V
0 0.1
−80 −40 0 40 80 120 160 0 -0.3 -0.6 -0.9 -1.2 -1.5

Case temperature Tc (°C) Drain−source voltage VDS (V)

C – VDS Vth − Tc
10000 5
Vth (V)

Ciss 4
(pF)

1000
Gate threshold voltage

3
C

Coss
Capacitance

100

10 Common source
Common source 1 VDS = 10 V
VGS = 0 V Crss ID = 1 mA
f = 1 MHz Pulse test
Tc = 25°C
1 0
0.1 1 10 100 −80 −40 0 40 80 120 160 200

Drain−source voltage VDS (V) Case temperature Tc (°C)

Dynamic input/output
PD − Tc characteristics
50 500 20
Common source
ID = 13 A
(W)

VDS (V)

Tc = 25°C
(V)

VDS Pulse test

40 400 16
PD

VGS

200 V
Drain power dissipation

30 300 VDD = 100 V 12

Drain−source voltage

Gate−source voltage

400 V

20 200 8
VGS

10 100 4

0 0 0
0 40 80 120 160 200 0 6 12 18 24 30

Case temperature Tc (°C) Total gate charge Qg (nC)

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rth – tw
10

Normalized transient thermal impedance

1
Duty = 0.5
rth (t)/Rth (ch-c)

0.2
0.1
0.1
0.05
0.02
PDM

0.01 t
0.01
Single pulse T

Duty = t/T
Rth (ch-c) = 3.125°C/W
0.001
10 μ 100 μ 1m 10 m 100 m 1 10

Pulse width tw (s)

Safe operating area EAS – Tch

100 100

ID max (Pulse) *
EAS (mJ)

ID max (Continuous) 100 μs * 80

10
(A)

1 ms * 60
ID

Avalanche energy
Drain current

1 DC operation
Tc = 25°C 40

20
0.1

0
25 50 75 100 125 150
0.01 * Single nonrepetitive
pulse Tc = 25°C Channel temperature (initial) Tch (°C)
Curves must be derated
linearly with increase in
temperature.
VDSS max
0.001
0.1 1 10 100 1000

Drain−source voltage VDS (V) BVDSS

15 V
−15 V IAR

VDD VDS

TEST CIRCUIT WAVEFORM

RG = 25 Ω 1 ⎛ B VDSS ⎞
Ε AS = ⋅ L ⋅ I2 ⋅ ⎜ ⎟
VDD = 90 V, L = 0.9 mH 2 ⎜B − ⎟
⎝ VDSS VDD ⎠

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RESTRICTIONS ON PRODUCT USE

• Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively "Product") without notice.

• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission.

• Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR
APPLICATIONS.

• PRODUCT IS NEITHER INTENDED NOR WARRANTED FOR USE IN EQUIPMENTS OR SYSTEMS THAT REQUIRE
EXTRAORDINARILY HIGH LEVELS OF QUALITY AND/OR RELIABILITY, AND/OR A MALFUNCTION OR FAILURE OF WHICH
MAY CAUSE LOSS OF HUMAN LIFE, BODILY INJURY, SERIOUS PROPERTY DAMAGE AND/OR SERIOUS PUBLIC IMPACT
("UNINTENDED USE"). Except for specific applications as expressly stated in this document, Unintended Use includes, without
limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for
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• ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE
FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR
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LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO
SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS
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• Do not use or otherwise make available Product or related software or technology for any military purposes, including without
limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile
technology products (mass destruction weapons). Product and related software and technology may be controlled under the
applicable export laws and regulations including, without limitation, the Japanese Foreign Exchange and Foreign Trade Law and the
U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited
except in compliance with all applicable export laws and regulations.

• Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product.
Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances,
including without limitation, the EU RoHS Directive. TOSHIBA ASSUMES NO LIABILITY FOR DAMAGES OR LOSSES
OCCURRING AS A RESULT OF NONCOMPLIANCE WITH APPLICABLE LAWS AND REGULATIONS.

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