AOD472A

TM
N-Channel SDMOS POWER Transistor
General Description Features

The AOD472A/L is fabricated with SDMOS trench

TM VDS (V) = 25V
technology that combines excellent RDS(ON) with low gate ID = 55A (VGS = 10V)
charge.The result is outstanding efficiency with controlled RDS(ON) < 5.5mΩ (VGS = 10V)
switching behavior. This universal technology is well suited RDS(ON) < 9.5mΩ (VGS = 4.5V)
for PWM, load switching and general purpose applications.
AOD472A and AOD472AL are electrically identical.
100% UIS Tested!
-RoHS Compliant 100% R g Tested!
-AOD472AL is Halogen Free

TO-252
D-PAK Bottom View D
Top View
D

S G S

G S

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 25 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 55
CurrentG TC=100°C ID 43
Pulsed Drain Current C IDM 100 A
Pulsed Forward Diode CurrentC ISM 100
Avalanche Current C IAR 50
C
Repetitive avalanche energy L=50uH EAR 63 mJ
TC=25°C 50
B PD W
Power Dissipation TC=100°C 25
TA=25°C 2.5
A PDSM W
Power Dissipation TA=70°C 1.6
Junction and Storage Temperature Range TJ, TSTG -55 to 175 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
A
Maximum Junction-to-Ambient t ≤ 10s 15 20 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 41 50 °C/W
Maximum Junction-to-Case B Steady-State RθJC 2.1 3 °C/W
B
Maximum Junction-to-TAB Steady-State RθJC-TAB 2.4 3.4 °C/W

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AOD472A

Electrical Characteristics (T J=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 25 V
VDS=25V, VGS=0V 10
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 50
IGSS Gate-Body leakage current VDS=0V, VGS=±20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.2 2 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 100 A
VGS=10V, ID=30A 4.4 5.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 6.6 8.2
VGS=4.5V, ID=20A 7.8 9.5 mΩ
gFS Forward Transconductance VDS=5V, ID=30A 65 S
VSD Diode Forward Voltage IS=1A, VGS=0V 0.7 1 V
IS Maximum Body-Diode Continuous Current G 50 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 1500 1800 2200 pF
Coss Output Capacitance VGS=0V, VDS=12.5V, f=1MHz 340 445 580 pF
Crss Reverse Transfer Capacitance 200 285 400 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 1.1 1.6 2.4 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 25 31 40 nC
Qg(4.5V) Total Gate Charge 12 15 20 nC
VGS=10V, VDS=12.5V, ID=30A
Qgs Gate Source Charge 3.5 4.8 7 nC
Qgd Gate Drain Charge 6.5 8.9 13 nC
tD(on) Turn-On DelayTime 8 ns
tr Turn-On Rise Time VGS=10V, VDS=12.5V, RL=0.42Ω, 10.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 29 ns
tf Turn-Off Fall Time 9 ns
trr Body Diode Reverse Recovery Time IF=30A, dI/dt=500A/µs 9.5 12 15 ns
Qrr Body Diode Reverse Recovery Charge IF=30A, dI/dt=500A/µs 17 21 26 nC
2
A: The value of RθJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power
dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the
user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=175°C.
G. The maximum current rating is limited by bond-wires.
2
H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev1 : Nov. 2008

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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AOD472A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

100 80
10V 5V VDS=5V
4.5V
80
60
7V
60
ID (A)

ID(A)
4V 40
40

20
20 125°C
VGS=3.5V
25°C

0 0
0 1 2 3 4 5 0 1 2 3 4 5

VDS (Volts) VGS(Volts)

Fig 1: On-Region Characteristics Figure 2: Transfer Characteristics

12
2

10
Normalized On-Resistance

1.8
VGS=4.5V
8
1.6
RDS(ON) (mΩ)

VGS=10V, 30A
6 17
1.4
5
4 2
1.2
VGS=10V VGS=4.5V, 20A10
2
1

0
0.8
0 5 10 15 20 25 30
ID (A) 0 25 50 75 100 125 150 175 200
Temperature (°C)
0
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage 18
Figure 4: On-Resistance vs. Junction Temperature

20 1.0E+02
ID=30A
1.0E+01

15 40
1.0E+00

125°C
RDS(ON) (mΩ)

1.0E-01
IS (A)

10 125°C
1.0E-02
25°C
1.0E-03
5
1.0E-04
25°C
1.0E-05
0 0.0 0.2 0.4 0.6 0.8 1.0 1.2
2 4 6 8 10 VSD (Volts)
VGS (Volts) Figure 6: Body-Diode Characteristics
Figure 5: On-Resistance vs. Gate-Source Voltage

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AOD472A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 2800
VDS=12.5V
ID=30A 2400
8
Ciss
2000

Capacitance (pF)
VGS (Volts)

6 1600

1200
4
Coss
800
2
400
Crss
0 0
0 5 10 15 20 25 30 35 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0 200
TJ(Max)=175°C
100.0 10µs 160 TC=25°C
10µs
RDS(ON)
limited 100µs
ID (Amps)

17
Power (W)

10.0 120
DC 5
1m
1.0 10ms 80 2
10
0.1 TJ(Max)=175°C 40
TC=25°C
0.0 0
0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) 0
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe 18
Figure 10: Single Pulse Power Rating Junction-to-
Operating Area (Note F) Case (Note F)

10
In descending order
D=Ton/T
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

TJ,PK=TC+PDM.ZθJC.RθJC
Thermal Resistance

RθJC=3°C/W 40
1

0.1 PD

Ton
T
Single Pulse
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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AOD472A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

80 60
TA=25°C
ID(A), Peak Avalanche Current

70
50

Power Dissipation (W)

60
TA=100°C 40
50
TA=150°C
40 30

30
20
20 TA=125°C
10
10

0 0
0.000001 0.00001 0.0001 0.001 0 25 50 75 100 125 150 175
Time in avalanche, tA (s) TCASE (°C)
Figure 12: Single Pulse Avalanche capability Figure 13: Power De-rating (Note F)

60 10000

TA=25°C
50
1000
Current rating ID(A)

40
Power (W)

17
100 5
30
2
20 10
10

10
1
0
1E- 1E- 0.001 0.01 0.1 1 10 100 1000
0 25 50 75 100 125 150 175 05 04 0
TCASE (°C) Pulse Width (s) 18
Figure 14: Current De-rating (Note F) Figure 15: Single Pulse Power Rating Junction-to-
Ambient (Note H)

100
D=Ton/T In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJA Normalized Transient

10 TJ,PK=TA+PDM.ZθJA.RθJA
40
Thermal Resistance

RθJA=50°C/W

0.1

PD
0.01 Single Pulse Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)

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AOD472A

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 12 16 3

di/dt=700A/us 14 di/dt=700A/us 125ºC

25 125ºC 10 2.5
12
20 8 2
10 trr
Qrr
Qrr (nC)

25ºC

Irm (A)

trr (ns)
25ºC
8 1.5

S
15 6
125ºC 6 125ºC
10 4 1
Irm 4
25ºC S
5 2 25ºC 0.5
2

0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IB (A) IB (A)
Figure 17: Diode Reverse Recovery Charge and Figure 18: Diode Reverse Recovery Time and Soft
Peak Current vs. Conduction Current Coefficient vs. Conduction Current

30 10 20 2.5
Is=20A
Is=20A 125ºC
125ºC
25 2
8
15
20 25ºC
6 1.5
Qrr (nC)

Irm (A)

trr
trr (ns)

10 25ºC

S
15 125º
Qrr
125ºC 4 1
10 S
5 25ºC
25ºC 2 0.5
5
Irm
0 0 0 0
0 100 200 300 400 500 600 700 800 0 100 200 300 400 500 600 700 800
di/dt (A/µs) di/dt (A/µs)
Figure 19: Diode Reverse Recovery Charge and Figure 20: Diode Reverse Recovery Time and Soft
Peak Current vs. di/dt Coefficient vs. di/dt

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AOD472A

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

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