General purpose transistor (50V, 0.

15A)
2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S

Features Dimensions (Unit : mm)

1. Low Cob. Cob=2.0pF (Typ.)Cob=2.0pF (Typ.)
2. Complements the 2SA1037AK / 2SA1576A / 2SC2412K 2SC4081 2SC4617

(1)
2SA1774H / 2SA2029 / 2SA933AS.

0.2
(1)

0.65 0.65
0.95 0.95
(1)

2.0
1.3
1.9
2.9

(2)

0.5 0.5
(3)

1.0
1.6
0.3
(2)
0.4
(2)

(3)
(3)

0.3
1.25

0.2
1.6 0.8
2.1
2.8

0.2
1.6
Structure

0.15

0.15
0.9
0.7

0.55
0.7
0.15
Epitaxial planar type

1.1
0.8

0~0.1

0~0.1
0.1Min. 0.1Min.
NPN silicon transistor

0~0.1
0.3Min.

Each lead has same dimensions Each lead has same dimensions
ROHM : UMT3 (1) Emitter ROHM : EMT3 (1) Emitter
ROHM : SMT3 (1) Emitter
EIAJ : SC-70 (2) Base EIAJ : SC-75A (2) Base
EIAJ : SC-59 (2) Base
JEDEC : SOT-323 (3) Collector JEDEC : SOT-416 (3) Collector
JEDEC : SOT-346 (3) Collector
Abbreviated symbol: B* Abbreviated symbol: B*
Abbreviated symbol: B*

2SC5658 2SC1740S
4±0.2 2±0.2
1.2
0.2 0.8 0.2

3±0.2

3Min.
0.32

0.4 0.4
1.2

(2)
0.8
(3)

(15Min.)
(1)
0.22

0.45+0.15
−0.05
0.5
0.13
0~0.1

0.15Max.
+0.15
2.5 +0.4
−0.1 0.5 0.45 − 0.05
5

(1) (2) (3)

(1) Base (1) Emitter

ROHM : VMT3 (2) Emitter ROHM : SPT (2) Collector
(3) Collector EIAJ : SC-72 (3) Base

Abbreviated symbol: B*

* Denotes hFE

Absolute maximum (Ta=25C)

Parameter Symbol Limits Unit
Collector-base voltage VCBO 60 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 7 V
Collector current IC 0.15 A
2SC2412K, 2SC4081 0.2
Collector power
dissipation 2SC4617, 2SC5658 PC 0.15 W
2SC1740S 0.3
Junction temperature Tj 150 °C
Storage temperature Tstg −55 to +150 °C

Electrical characteristics (Ta=25C)

Parameter Symbol Min. Typ. Max. Unit Conditions
Collector-base breakdown voltage BVCBO 60 − − V IC=50μA
Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA
Emitter-base breakdown voltage BVEBO 7 − − V IE=50μA
Collector cutoff current ICBO − − 0.1 μA VCB=60V
Emitter cutoff current IEBO − − 0.1 μA VEB=7V
DC current transfer ratio hFE 120 − 390 − VCE=6V, IC=1mA
Collector-emitter saturation voltage VCE(sat) − − 0.4 V IC/IB=50mA/5mA
Transition frequency fT − 180 − MHz VCE=12V, IE=−2mA, f=100MHz
Output capacitance Cob − 2 3.5 pF VCE=12V, IE=0A, f=1MHz

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 2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Data Sheet

Packaging specifications and hFE

Package Taping
Code T146 T106 TL T2L TP
Basic ordering
3000 3000 3000 8000 5000
Type hFE unit (pieces)
2SC2412K QR − − − −
2SC4081 QR − − − −
2SC4617 QR − − − −
2SC5658 QR − − − −
2SC1740S QR − − − −

hFE values are classified as follows :

Item Q R
hFE 120 to 270 180 to 390

Electrical characterristic curves

0.50mA
50 100 10
Ta=25°C mA Ta=25°C 30μA
VCE=6V 0.45 A

COLLECTOR CURRENT : IC (mA)

0.40m
COLLECTOR CURRENT : IC (mA)

27μA
COLLECTOR CURRENT : IC (mA)

20 0.35mA
80 8 24μA
10 0.30mA
21μA
5 0.25mA
60 6 18μA
25°C
Ta=100°C

0.20mA
−55°C

15μA
2
0.15mA 12μA
40 4
1
0.10mA 9μA
0.5 6μA
20 2
0.05mA
0.2 3μA
0 IB=0A IB=0A
0.1 0
0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 0 0.4 0.8 1.2 1.6 2.0 0 4 8 12 16 20

BASE TO EMITTER VOLTAGE : VBE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR TO EMITTER VOLTAGE : VCE (V)

Fig.1 Grounded emitter propagation Fig.2 Grounded emitter output Fig.3 Grounded emitter output
characteristics characteristics ( Ι ) characteristics ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

500 500 0.5

Ta=25°C VCE=5V Ta=25°C
Ta=100°C

25°C 0.2
DC CURRENT GAIN : hFE

DC CURRENT GAIN : hFE

200 VCE=5V 200

3V −55°C
1V IC/IB=50
0.1 20
100 100 10

0.05
50 50

0.02
20 20

10 10 0.01
0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200 0.2 0.5 1 2 5 10 20 50 100 200
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.4 DC current gain vs. Fig.5 DC current gain vs. Fig. 6 Collector-emitter saturation
collector current ( Ι ) collector current ( ΙΙ ) voltage vs. collector current

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2SC2412K / 2SC4081 / 2SC4617 / 2SC5658 / 2SC1740S Data Sheet

COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

0.5
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)

IC/IB=10 0.5 Ta=25°C

IC/IB=50

TRANSITION FREQUENCY : fT (MHz)

VCE=6V
500
0.2
Ta=100°C
0.2
25°C
Ta=100°C −55°C
0.1 25°C 0.1
200
−55°C
0.05 0.05

100
0.02
0.02

0.01 0.01 50
0.2 0.5 1 2 5 10 20 50 100 200 −0.5 −1 −2 −5 −10 −20 −50 −100
0.2 0.5 1 2 5 10 20 50 100
EMITTER CURRENT : IE (mA)
COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA)

Fig.7 Collector-emitter saturation Fig.9 Gain bandwidth product vs.

Fig.8 Collector-emitter saturation
voltage vs. collector current ( Ι ) emitter current
voltage vs. collector current (ΙΙ)
BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps)

20 Ta=25°C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)

Ta=25°C f=32MHZ
200
EMITTER INPUT CAPACITANCE : Cib (pF)

f=1MHz VCB=6V
IE=0A
10 Cib IC=0A
100

5
50

2 20
Co
b

1 10
−0.2 −0.5 −1 −2 −5 −10
0.2 0.5 1 2 5 10 20 50
COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER CURRENT : IE (mA)
EMITTER TO BASE VOLTAGE : VEB (V)
Fig.10 Collector output capacitance vs. Fig.11 Base-collector time constant
collector-base voltage vs. emitter current
Emitter input capacitance vs.
emitter-base voltage

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 Notice

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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
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which can be obtained from ROHM upon request.

Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.

Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
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The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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Please be sure to implement in your equipment using the Products safety measures to guard
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