Individual Coursework Simulation

6E5Z1101 Electronic Systems

Aim

The aim of this experiment is to:

• Provide practical experience in the use of circuit simulation software

• Develop a working design for your coursework submission

Ascociated Learning Activities

This experiment is supported by the following unit activities and resources:

• Lectures
• Tutorials

References
Erickson, R. W. & Maksimovic, D. (2007), Fundamentals of power electronics, Springer Science &
Business Media.

Rashid, M. H. (2009), Power electronics: circuits, devices, and applications, Pearson Education.

Ross, J. N. (1997), The essence of power electronics, Pearson PTR.

National Instruments Multisim, online resources: http://www.ni.com/multisim/

School of Engineering Undergraduate Programmes 2020-21

 Individual Coursework Simulation
6E5Z1101 Electronic Systems

1 Introduction

You will have an individual specification for a DC-DC converter that specifies:

• Input voltage - Vin = 3.3 V

• Output voltage - Vout = 5V
• PWM frequency – f = 9.765 kHz
• Load resistance - RL = 82 Ω
• Inductor – L = 2.7 mH
• Capacitor – C = 47µF
• RB = 470 Ω

By the end of this session you should have used Multisim to create a number of simulated designs
that meet this specification using realistic component values and will be able to select the best one
to take forward to construction.

2 Calculations

2.1 Duty Cycle

For a boost converter, Vout is theoretically given by:

Vin
Vout =
1−D

So, the required duty cycle is:

Vin
D=1−
Vout

Rearrange this equation to calculate the theoretical duty cycle (this assumes ideal components).

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 Individual Coursework Simulation
6E5Z1101 Electronic Systems

Figure 1: Circuit diagrams of a boost converter using (i) and NPN BJT, (ii) an N-channel MOSFET.

3 Circuit Options

There are two basic variants on the boost converter circuit that you will need to consider when
designing your converter. These are illustrated in figure 1. In both cases, RL is your specified
load resistance and L and C are the values you have just calculated. In the actual circuit, VP will
be a 0V/3.3V PWM waveform generated by the FPGA board. To simulate it, you can use the
PULSE VOLTAGE source (as you did a couple of weeks ago). The values for the source should be:

Initial value: 0 V
Pulsed value: 3.3 V
Delay time: 0 s
Rise time: 1n s
Fall time: 1n s
Pulse width: D/f s
Period: 1/f s

where D and f are your duty-cycle and PWM frequency values.

When simulating the inductor, L, use the NON IDEAL INDUCTOR model in Multisim. For the
‘Series resistance (ESR)’ value, use the quoted ‘DC Resistance Max’ value for your inductor.

School of Engineering Undergraduate Programmes 2020-21

 Individual Coursework Simulation
6E5Z1101 Electronic Systems

You should experiment with both the BJT and MOSFET transistor options. For the BJT, the
recommended model to try is the ZTX851 whilst for the MOSFET it is the IRL2703. You should also
experiment with at least two diode options, a 1N4001 rectifier diode and a 1N5817 Schottky diode.
This makes four permutations of component types to test in total. This is a minimal requirement, for
extra credit, other options could also be considered - keep in mind cost vs. performance compromises
when making comparisons with alternative components.
NB. For the BJT, a base resistor, RB , is required. Choose a value, with reference to the ZTX851
datasheet, that will guarantee the transistor will saturate when VP = 3.3V given your circuit’s average
IL value.

4 Simulations

For each design, run an interactive simulation to check that the required output voltage is achieved.
You will find that the theoretical value of D, calculated under ideal assumptions, does not quite
meet the specification (especially for the BJT due to the base-storage time of the device), adjust
the pulse width of your pulse voltage source to achieve the required output.
Using power probes on the Vin voltage source and the RL load, measure the simulated supply and
load powers and, hence, calculate the simulated efficiency of the converters.
Finally, using a transient simulation, find the steady-state value of the peak-to-peak output voltage
ripple. If this is greater than 1% of your average output voltage, you will want to reconsider your
choice for the capacitor, C. You should include transient steady-state simulations for Vout, VP , V1
and IL in your coursework.
Record your results in the table below which should be included in your coursework submission:

Transistor Diode Duty Cycle [%] Efficiency ∆Vout [V]

ZTX851 1N4001

ZTX851 1N5817

IRL2703 1N4001

IRL2703 1N5817

5 Circuit Building

After analysing the results of your simulations, you should build your converter circuit (Simulation).
As noted before, consideration of the four options listed represent a minimal requirement and you
are encouraged to investigate other viable options for transistors and diodes also (although you may
still end up deciding that one of these listed is the best combination). Whatever you decide, make
sure you justify your choice with reference to efficiency and cost.
You will probably need to make fine adjustments to D in real life but, otherwise, your simulation
work should give you confidence that your design is a practical one.

School of Engineering Undergraduate Programmes 2020-21