SEMICONDUCTOR IRF260 Series RoHS

RoHS
Nell High Power Products
N-Channel Power MOSFET
50A, 200Volts

DESCRIPTION
D
The Nell IRF260 is a three-terminal silicon device
with current conduction capability of 50A, fast switching
speed, low on-state resistance, breakdown voltage
rating of 200V, and max. threshold voltage of 4 volts.
They are designed for use in applications such as G
G D
switched mode power supplies, DC to DC converters, D S
motor control circuits, UPS and general purpose S TO-3PB TO-247AB
switching applications. (IRF260B) (IRF260C)
D (Drain)

FEATURES
RDS(ON) = 0.055Ω @ VGS = 10V
G
Ultra low gate charge(230nC Max.) (Gate)

Low reverse transfer capacitance

(C RSS = 310pF typical) S (Source)

Fast switching capability

100% avalanche energy specified PRODUCT SUMMARY
Improved dv/dt capability ID (A) 50
150°C operation temperature VDSS (V) 200
RDS(ON) (Ω) 0.055 @ V GS = 10V
QG(nC) max. 230

ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS VALUE UNIT
VDSS Drain to Source voltage T J =25°C to 150°C 200
V DGR Drain to Gate voltage R GS =20KΩ 200 V

V GS Gate to Source voltage ±20

T C =25°C 50
ID Continuous Drain Current (V GS =10V)
T C =100°C 35
A
I DM Pulsed Drain current(Note 1) 200
I AR Avalanche current(Note 1) 50

E AR Repetitive avalanche energy(Note 1) l AR =50A, R GS =50Ω, V GS =10V 28

mJ
E AS Single pulse avalanche energy(Note 2) l AS =50A, L =0.7mH 1000

dv/dt Peak diode recovery dv/dt(Note 3) 5.0 V /ns

Total power dissipation T C =25°C 280 W

PD
Derate above 25 ° C 2.2 W /°C

TJ Operation junction temperature -55 to 150

T STG Storage temperature -55 to 150 ºC

TL Maximum soldering temperature, for 10 seconds 1.6mm from case 300

Mounting torque, #6-32 or M3 screw 10 (1.1) lbf . in (N . m)

Note: 1. Repetitive rating: pulse width limited by junction temperature.

2 . l AS =50 A, L =0.7 mH , V DD =50 V , R G =25 Ω , starting T J =25 °C.
3 . I SD ≤ 50 A, di/dt ≤ 230 A/µs, V DD ≤ V (BR)DSS , starting T J < 1 50 °C.

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 SEMICONDUCTOR IRF260 Series RoHS
RoHS
Nell High Power Products
THERMAL RESISTANCE
SYMBOL PARAMETER MIN. TYP. MAX. UNIT
Rth(j-c) Thermal resistance, junction to case 0.45
Rth(c-s) Thermal resistance, case to heat sink 0.24 ºC/W
Rth(j-a) Thermal resistance, junction to ambient 40

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)

SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT

STATIC

V(BR)DSS Drain to source breakdown voltage I D = 250μA, V GS = 0V 200 V

▲V (BR)DSS/▲T J Breakdown voltage temperature coefficient I D = 1mA, V DS =V GS 0.24 V/ºC

V DS =200V, V GS =0V T C = 25°C 25.0

I DSS Drain to source leakage current μA
V DS =160V, V GS =0V T C =125°C 250

Gate to source forward leakage current V GS = 20V, V DS = 0V 100

I GSS nA
Gate to source reverse leakage current V GS = -20V, V DS = 0V -100
R DS(ON) Static drain to source on-state resistance I D = 28A, V GS = 10V 0.055 Ω
V GS(TH) Gate threshold voltage V GS =V DS , I D =250μA 2.0 4.0 V
g fs Forward transconductance V DS = 50V, l D = 28A 24 S

DYNAMIC

C ISS Input capacitance 5200

C OSS Output capacitance V DS = 25V, V GS = 0V, f =1MHz 1200 pF

C RSS Reverse transfer capacitance 310

t d(ON) Turn-on delay time 23
tr Rise time V DD = 100V, V GS = 10V 120
ns
t d(OFF) Turn-off delay time I D = 50A, R G = 4.3Ω, R D = 2.1Ω
100
(Note1,2)
tf Fall time 94

QG Total gate charge 230

V DD = 160V, V GS = 10V
Q GS Gate to source charge 42 nC
I D = 50A, (Note1,2)
Q GD Gate to drain charge (Miller charge) 110
LD Internal drain inductance 5
Between lead, 6mm(0.25”) form
package and center of die contact nH
LS Internal source inductance 13

SOURCE TO DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25°C unless otherwise specified)
SYMBOL PARAMETER TEST CONDITIONS MIN. TYP. MAX. UNIT
VSD Diode forward voltage I SD = 50A, V GS = 0V 1.8 V
Is (Is D ) Continuous source to drain current Integral reverse P-N junction 50
diode in the MOSFET
D (Drain)

A
I SM Pulsed source current 200
G
(Gate)

S (Source)

t rr Reverse recovery time I SD = 50A, V GS = 0V, 390 590 ns

dI F /dt = 100A/µs
Q rr Reverse recovery charge 4.8 7.2 μC

Note: 1. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2%.
2. Essentially independent of operating temperature.

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 SEMICONDUCTOR IRF260 Series RoHS
RoHS
Nell High Power Products

ORDERING INFORMATION SCHEME

IRF 260 B

MOSFET series
N = N-Channel,IRF series

Current and Voltage rating, ID & VDS

50A / 200V

Package type
B = TO-3P(B)
C = TO-247AB

■ TYPICAL CHARACTERISTICS
Fig.2 Typical output characteristics,
Fig.1 Typical output characteristics, T C =150°C
T C =25°C

V GS V GS
Top: 15V Top: 15V
10V 10 2 10V
10 2 8V 8V
Drain Current, I D (A)
Drain Current, l D (A)

7V 7V
6V 6V
5.5V 5.5V
5V 5V
Bottom: 4.5V Bottom: 4.5V

4.5V
10 1 10 1

4.5V
Note: Note:
1. 20µs Pulse Test 1. 20µs Pulse Test
2. T C = 25°C 2. T C = 150°C

10 -1 10 0 10 1
10 -1 10 0 10 1

Drain-Source voltage, V DS (V) Drain-Source voltage, V DS (V)

Fig.4 Normalized On-Resistance vs. Temperature

Fig.3 Typical transfer characteristics

3.0
Drain-Source On-Resistance,

10 2 2.5
R Ds(ON) (Normalized)
Drain current, l D (A)

150ºC 2.0

25ºC
1.5
10 1
1.0

Note:
1. V DS = 50V 0.5 I D = 50A
2. 20µs Pulse Test V GS = 10V

0.0
4 5 6 7 8 9 10
-60 -40 -20 0 20 40 60 80 100 120 140 160

Gate-Source voltage, V GS (V) Junction temperature, T j (°C)

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 SEMICONDUCTOR IRF260 Series RoHS
RoHS
Nell High Power Products

Fig.5 Typical capacitance vs. Drain-to-Source Fig.6 Typical source-drain diode forward
voltage voltage
12000
V GS = 0V, f = 1MHz

Reverse drain current,I SD (A)

C iss = C gs +C gd ( C ds shorted )
10000 C oss = C ds +C gd
10 2
C rss = C gd
Capacitance (pF)

8000
150ºC
6000 C iss

25ºC
4000
10 1
C oss
2000
C rss V GS = 0V
0
10 0 10 1 0.5 1.0 1.5 2.0 2.5

Drain- Source voltage, V SD (V) Source- Drain voltage, V SD (V)

Fig.7 Typical gate charge vs. gate-to-source Fig.8 Maximum safe operating area
voltage

20 1000
V DS = 160V
Operation in This Area is Limited by R DS(ON)
Gate-Source voltage, V GS (V)

I D = 50 A V DS = 100V
V DS = 40V
16
10µs
Drain current, l D (A)

100
12
100µs

8 1ms
10

Note: 10ms
4
1. T C = 25°C
2. T J = 150°C
3. Single Pulse
0 1
0 40 80 120 160 200 240 1 10 10 2 10 3

Total gate charge, Q G (nC) Drain-source voltage, V DS (V)

Fig.9 Maximum drain current vs.

Case temperature

50

40
Drain current, l D (A)

30

20

10

0
25 50 75 100 125 150

Case temperature, T C (°C)

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 SEMICONDUCTOR IRF260 Series RoHS
RoHS
Nell High Power Products

Fig.10 Maximum effective transient thermal impedance,

Junction-to-Case
Thermal response R th(J-C) (t)

D ~ 0.5

0.1 0.2 PDM

0.1 t1
0.05 Single pulse t2
0.02 (Thermal response)
10 -2 0.01
Notes:
1. Duty factor, D = t1/ t2
2. Peak TJ = PDM * Rth(j-c) +TC
10 -3
10 -5 10 -4 10 -3 10 2 0.1 1 10

Rectangular pulse duration, t 1 (S)

Fig.11a. Switching time test circuit Fig.11b. Switching time waveforms

RD
V DS
V DS
V GS 90%

RG D.U.T. +
- V DD

10V 10%
Pulse width ≤ 1µs V GS
Duty Factor ≤ 0.1%
t d(ON) t d(OFF)
tR
tF

Fig.12a. Unclamped lnductive test circuit Fig.12b. Unclamped lnductive waveforms

L BV DSS
V DS
l AS

RG D.U.T. +
V
- DD l D(t)
l AS A V DS(t)
10V V DD
tP 0.01Ω

Time
Vary t p to obtain required I AS tp

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 SEMICONDUCTOR IRF260 Series RoHS
RoHS
Nell High Power Products

Fig.12c. Maximum avalanche energy vs.

Drain current

2400
lD

Single pulse energy, E AS (mJ)

TOP 21A
2000 29A
BOTTOM 50A
1600

1200

800

400
V DD = 50 V
0
25 50 75 100 125 150

Starting Junction temperature, T J (°C)

Fig.13a. Basic gate charge waveform Fig.13b. Gate charge test circuit

Current Regulator
Same Type as D.U.T.
V GS

50KΩ
QG
12V 0.2µF
10V
0.3µF

Q GD
+
Q GS V DS
D.U.T. -

V GS

3mA

RG RD
Charge
Current Sampling Resistors

Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET

Driver Gate Drive

P.W.
Period D=
P.W. Period
D.U.T.
+ Circuit Layout Considerations
• Low Stray lnductance VGS=10V *
• Ground Plane
• Low Leakage lnductance
Current Transformer
D.U.T. I SD Waveform
-
Reverse
+ Recovery Body Diode Forward
Current Current
di/dt
- + D.U.T. VDS Waveform
- Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
• dv/dt controlled by R G Inductor Curent
RG +
• Driver same type as D.U.T.
• l SD controlled by Duty Factor " D " V DD
- ISD
• D.U.T. -Device Under Test Ripple ≤ 5%

*V GS = 5V for Logic Level Devices and 3V for drive devices

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 SEMICONDUCTOR IRF260 Series RoHS
RoHS
Nell High Power Products

TO-3PB

5.0 ±0 . 2
15.6±0.4 4.8±0.2

2.0

1.8
9.6 2.0±0.1

19.9±0.3

4.0
Φ3.2 ± 0,1

2
20.0 min

4.0 max

3
+0.2 +0.2
1.05 -0.1 0.65 -0.1

5.45±0.1 5.45±0.1 1.4

G D S

D (Drain)

1 2 3

G
(Gate)

All dimensions in millimeters(inches) S (Source)

TO-247AB

4.69 (0.185)
15.49 (0.610) 5.31 (0.209)
16.26 (0.640) 1.49 (0.059)
2.49 (0.098)
5.38 (0.212)
16.15 (0.242)
6.20 (0.244)
Drain

20.80 (0.819)
21.46 (0.845)
3.55 (0.138)
3.81 (0.150)

G D S
2.87 (0.113)
4.50 (0.177)Max
3.12 (0.123)
1.65 (0.065) 0.40 (0.016)
(TYP.)
19.81 (0.780) 2.13 (0.084) 0.79 (0.031)
20.32 (0.800)
1.01 (0.040)
1.40 (0.055)
(TYP.)

2.21 (0.087)
5.45 (0.215) 5.45 (0.215) 2.59 (0.102)

D (Drain)

G
(Gate)
All dimensions in millimeters(inches)
S (Source)

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