erim.

nl
V1 Charackis tics of PN Jont idn Dhodo

AT (nawvt
Diode Undo
To Shdy fhe Characeristics OfPN Jone tion
Ceverse biaa Conditiona drd Tho dynomic onislanco

mATERIALs ReQUrReD
ATOS1Stor (loo2), a PN Jonchon Diote, an ammeler (6 3o (A),
tnq
volmeter ( 0-2 v avariable D volhage Sopply(0 30V) ard m e
wifes

THEORY
tha Corducts CUrfent
A diodo is athoD - fermisd eleclic Component
in Cne directien and hous low eaigtance to on0 direction,
brimarily
primarily
nJurctiontion diode
in the ether direction.
Cund high resistance
Semicendoetor, Usvally silicon, bot Ger manivm
is mdde of a crystad to it
also Used. Tmpuritie ore ad ded
Grd Ghallivm Arsenide are

to Create a region O One Side that Contajn tho negati ve

Charge Garries (electrens called an 0-type semieonductar, ard
other Side that Contains
the positive Charge carrie s
a region on tha ond - tube
Cenductor. When ths n-type
Cheles), called a h-tyþe Semi electronb
fogether, a momentrary louo f
ma-erials are atached
side resukhirg in a third regon between
Occur rem Then to the
Cartier are preent. This regjen is Called
tho
the tuoo where no Charqe
be cause there are no Charge Carr iers Lo tt.
the debletitn eqion
diode's terminal ore attached to the -type (Cathooda) ond
The
between thoDA tuoo
type CAnodo) regien Tho boundary
b- JUnction, c here the acti on of tho
Tegien, Called a

diode a Kes place

Biasing of P Junctien Diode
ward Bias Operctfion
positives
Th P PN Juctien sotports uni-dicechional current lou. Tf tho
teminol thein inbot supply is Cennected to Pgide CAncdo) omd
The cenne cled to tha N- sido Cothoda) , thon
negtive ter mina is
the diode foruoard bicued condith&n. In this
S Said to be in

Cendttien the heiqht of the bolendial barrier junchen iS

at tha
vo Hage.
owered by ctn equal amount to given orwanrd bi aing
Both Tho
ho hole trem P- sido ard electrens trem Nsida cross tha
this
JUnChen Simelaneousl thereby decreaning tho depleled region
C9SntUHes a fofward cUccend Cmajerity Carrier movement - difusien

COrent). Assuming Current fowi through the di oda to be reny (arge,

an short -cireuited Swtch. Diode
The dioda Can be appfoximated
Smal reJistan Ce Calle d terward resistanCe (few Chmo)
Offers a ver
TNYO7
R
A
Circuit DC

Diogram Power
S

Grabh

Rererse 8ia Oberation

erminol of the input Supply is conectedl to b-side (Anade)
Tf negaive
and pesitive erminal is (60mected to - side Ccathodo) then tha diodo
an amount eval
is Said to be feverse biayed. Tn this Conditien
increases the height o f the po tentioR
pofentia
to reverse bíabing votage
p- sido and electrens en
barrier a t the juctien. Both the holes n

0-Side tend to move Ouay from the Junction, thereby ocreastng

debtetien regien. However, he process Canot contiove indetiailely nus a
Small çurrent called reverse Satuotion Currerd Cotinuen to flow in
Tho diode. The magnitudo of this Current isnogligjble. The diode con
be app roximated a s an open circoi ted Suitch becaube it offecs
d
Very high reISBance Called ererse Teistance few ilo Oh os)
-N

Circuit Diagram Garaph

Static Resistance :
The obposi tisn effered by a diodo to the direct current
lowinq torward biao Cenditon is Known 0s i t DC forword rey istance
O Stattc Resis tance. H S MooDuned by
takinq tho sachi e ef Dc
Notaqe across tho diode to the DC cuccent
flowinq through t
att an oberating point

Dynamic Repistan Ce The opposithen offemd by a diode to the

changt 9 Current flow n the torward biaed Cenditron is
Rnown
Rnown a i Ac foruord Resistance. T t i s measured by
atie of change in voltage acrass tha diode to tha
TEultin9 change in Corent thro ugh It for ar oberah
point P.

reistance Some Oyomic

Average Resistance
Average Avermge
eiStan Ce.
 rocedure
o) Forward Broed Si Diodo

Connect the oppaatus as shown in Cireuit diogram

22. Sel he DC vo Hage to 0.2V

3 Now Vay fhe vo Hage Upto SV amd nole the amne4er and Votme-l
Teadings for articular DC voltage.
. Calculale the dunamic rebistanco. of tho dioderdAVL\
AL