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Keywords: The improvement of a semiconductor thin film preparation technique is considered to be the primary strategy for
WO3 photoelectrocatalytic technique development. This research study’s focus was to develop an electrodeposition
Thin film fabrication technique for tungsten oxide (WO3) thin film fabrication to improve photoelectrocatalytic activities for water
Electrodeposition method
oxidation and insecticide degradation application. WO3 thin film deposition on conductive glass was developed
Photoelectrocatalytic activity
Insecticide degradation
using the electrochemical amperometric and cyclic voltammetric methods to optimize the essential parameters
that affect the characteristics and photoelectrocatalytic properties of the fabricated WO3 electrode. Character
istics such as the visible light absorption, morphology, crystalline structure, and photoelectrocatalytic oxidation
activities of the fabricated WO3 electrode were studied and compared with both electrodeposition methods. The
fabricated WO3 electrode was found to improve photoelectrocatalytic water oxidation more with the ampero
metric method than with the cyclic voltammetric method and the traditional spin coating method, up to 4 times
and 60 times, respectively. Photoelectrocatalytic enhancement is clarified by the effect of visible light absorption,
roughness morphology, crystallinity, and charge transfer rate improvement. We can approve the efficacy of the
developed WO3 electrode for insecticide removal under the photoelectrocatalytic mechanism. This is suitable for
further scaling up the study for a wastewater treatment system application.
1. Introduction Furthermore, the WO3 thin film fabrication process on the substrate is
critical in photoelectrocatalytic activity control. The traditional
The photoelectrocatalytic technique has received significant atten methods used for WO3 thin film fabrication are the spray pyrolysis
tion for its application to energy and to the environment due to the fact [25–27], spin coating [28–30], and hydrothermal methods [31–33].
that it is a technique that provides a highly efficient, economical, However, these methods have many disadvantages; for instance, they
convenient, and low-energy consumption process [1–6]. This technique are complicated methods, use high-temperature and high-pressure
can be developed by improving the efficiency of the working electrode conditions, and they are difficult to use for scaling up applications.
and designing the photoelectrocatalytic cells [7–12]. In particular, the The electrodeposition technique is an alternative method that has been
development of the working electrode involves selecting a suitable developed to address the previous limitations, as it is a highly efficient
semiconductor and developing a semiconductor thin film preparation technique for thin film preparation, takes less time, consumes little en
technique on the supporting surface [13–16]. Among semiconductor ergy, and can be used for scaling up applications [23,34–39]. There are
materials, a tungsten trioxide (WO3) semiconductor is the most attrac two main modes of electrodeposition thin film preparation techniques:
tive for use as a anode electrode for an oxidation reaction application applied potential and applied current modes [23,40–43]. This research
owing to its proper bandgap energy, the high positive potential of its study focused on the applied potential mode because this mode can
valent band position, its nontoxicity, and its high stability [17–24]. develop a variety of variables that can increase the highest efficiency of
* Corresponding author. Department of Chemistry, Faculty of Science and Technology, Rajamangala University of Technology Thanyaburi, Pathum Thani, 12110,
Thailand.
E-mail address: chatchai@rmutt.ac.th (C. Ponchio).
https://doi.org/10.1016/j.mssp.2020.105212
Received 27 February 2020; Received in revised form 16 April 2020; Accepted 17 May 2020
Available online 29 June 2020
1369-8001/© 2020 Elsevier Ltd. All rights reserved.
F. Supanantin and C. Ponchio Materials Science in Semiconductor Processing 118 (2020) 105212
2. Experimental
2.1. Materials
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F. Supanantin and C. Ponchio Materials Science in Semiconductor Processing 118 (2020) 105212
2WO4 2-
þ 4H2O2(aq) → W2O211 (aq) þ 2OH þ 3H2O(l) (2)
Fig. 5. Absorption spectra, inset of electrode color, and the correlation between
(aq) (aq)
W2O211 (aq) þ 6Hþ(aq) þ 4e → 2WO3(s) þ O2(g) þ 3H2O(l) (3) the absorbance coefficient and bandgap energy of (a) ITO and ITO/WO3 elec
trodes prepared by the different methods of (b) spin coating method, (c) cyclic
In equation (3), it can be explained that the acid (Hþ) content affects voltammetric method, and (d) amperometric method.
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F. Supanantin and C. Ponchio Materials Science in Semiconductor Processing 118 (2020) 105212
Fig. 7. XPS spectra of W4f, O1s, and C1s elements on ITO/WO3 electrode.
Fig. 6. X-ray diffraction patterns of (a) bare ITO and the ITO/WO3 prepared Table 1
with the different methods of (b) spin coating method, (c) cyclic voltammetric EDX data of elements and compounds containing the ITO/WO3 electrode.
method, and (d) amperometric method. Elements % (w/w) Compounds % (w/w)
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F. Supanantin and C. Ponchio Materials Science in Semiconductor Processing 118 (2020) 105212
Fig. 8. SEM images of (a) bare ITO substrate and ITO/WO3 electrode prepared with the different methods of (b) amperometric method and (c) spin coating method.
Fig. 9. (A) Photocurrent and (B) Nyquist plot of WO3 electrode for water
oxidation under visible light irradiation prepared with the different methods of
(a) spin coating method, (b) cyclic voltammetric method, and (c) ampero
metric method.
4 times and 60 times, respectively. The result can be used to confirm the
photoelectrocatalytic improvement of the advanced amperometric
method for WO3 film fabrication over other electrochemical and tradi
tional methods. The EIS measurement was used to confirm the charge
Fig. 11. % Carbofuran insecticide degradation using ITO/WO3 electrode pre
transfer resistant properties at the interfacial electrode/electrolyte of the pared by the developed amperometric method with the different applied po
prepared ITO/WO3 photoanode electrode. Fig. 9B shows that the nar tentials of 0.5, 1.0, 1.5, and 2.0 V.
rowest semi-circle of the Nyquist plot of the WO3 electrode prepared
with the amperometric method represents the lowest charge transfer The photoelectrocatalytic property enhancement with the ampero
resistant properties or the highest electron transfer rate at the electrode metric method can be explained by the improvement of the visible light
surface. This result supports the highest photocurrent of the developed absorption, crystalline structure, and high-porosity properties. This re
ITO/WO3 electrode due to the improvement of the charge transfer rate sults in highly efficient electron-hole generation, high charge separa
at the electrode surface during water oxidation at the electrode surface. tion, and a high reaction surface area resulting in the highest
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F. Supanantin and C. Ponchio Materials Science in Semiconductor Processing 118 (2020) 105212
Acknowledgments
This work was supported by the project of the Research and Re
searchers for Industries (RRI), Thailand Research Fund (TRF), and Siam
Aqua Tech Development System Co., Ltd. (MSD61I0073).
Fig. 12. % Carbofuran insecticide degradation using ITO/WO3 electrode pre Supplementary data to this article can be found online at https://doi.
pared with the developed amperometric method using the different PEC, EC, org/10.1016/j.mssp.2020.105212.
and PC catalytic mechanisms.
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