Professional Documents
Culture Documents
Features: 256Kb Bytewide FRAM Memory
Features: 256Kb Bytewide FRAM Memory
This product conforms to specifications per the terms of the Ramtron Ramtron International Corporation
standard warranty. The product has completed Ramtron’s internal 1850 Ramtron Drive, Colorado Springs, CO 80921
qualification testing and has reached production status. (800) 545-FRAM, (719) 481-7000
http://www.ramtron.com
Rev. 3.4
July 2007 1 of 13
A10-A14 Block Decoder
Address
A0-A14 A0-A7 Row
Latch 32,768 x 8 FRAM Array
Decoder
CE
A8-A9
Column Decoder
WE Control
Logic I/O Latch
DQ0-7
Bus Driver
OE
Pin Description
Pin Name Type Pin Description
A0-A14 Input Address: The 15 address lines select one of 32,768 bytes in the FRAM array. The
address value is latched on the falling edge of /CE.
DQ0-7 I/O Data: 8-bit bi-directional data bus for accessing the FRAM array.
/CE Input Chip Enable. /CE selects the device when low. Asserting /CE low causes the address
to be latched internally. Address changes that occur after /CE goes low will be
ignored until the next falling edge occurs.
/OE Input Output Enable: Asserting /OE low causes the FM18L08 to drive the data bus when
valid data is available. Deasserting /OE high causes the DQ pins to be tri-stated.
/WE Input Write Enable: Asserting /WE low causes the FM18L08 to write the contents of the
data bus to the address location latched by the falling edge of /CE.
VDD Supply Supply Voltage
VSS Supply Ground
Overview
The FM18L08 is a bytewide FRAM memory. The The FM18L08 drives the data bus when /OE is
memory array is logically organized as 32,768 x 8 asserted to a low state. If /OE is asserted after the
and is accessed using an industry standard parallel memory access time has been satisfied, the data bus
interface. All data written to the part is immediately will be driven with valid data. If /OE is asserted prior
nonvolatile with no delay. Functional operation of the to completion of the memory access, the data bus will
FRAM memory is the same as SRAM type devices, be driven when valid data is available. This feature
except the FM18L08 requires a falling edge of /CE to minimizes supply current in the system by eliminating
start each memory cycle. transients caused by invalid data being driven onto
the bus. When /OE is inactive the data bus will
Memory Operation remain tri-stated.
Users access 32,768 memory locations each with 8 Write Operation
data bits through a parallel interface. The cycle time Writes operations require the same time as reads. The
is the same for read and write memory operations. FM18L08 supports both /CE- and /WE-controlled
This simplifies memory controller logic and timing write cycles. In all cases, the address is latched on the
circuits. Likewise the access time is the same for read falling edge of /CE.
and write memory operations. When /CE is
deasserted high, a precharge operation begins, and is In a /CE-controlled write, the /WE signal is asserted
required of every memory cycle. Thus unlike SRAM, prior to beginning the memory cycle. That is, /WE is
the access and cycle times are not equal. Writes occur low when /CE falls. In this case, the device begins the
immediately at the end of the access with no delay. memory cycle as a write. The FM18L08 will not
Unlike an EEPROM, it is not necessary to poll the drive the data bus regardless of the state of /OE.
device for a ready condition since writes occur at bus
speed. In a /WE-controlled write, the memory cycle begins
on the falling edge of /CE. The /WE signal falls after
Note that the FM18L08 contains a limited low the falling edge of /CE. Therefore, the memory cycle
voltage write protection circuit. This will prevent begins as a read. The data bus will be driven
access when VDD is much lower than the specified according to the state of /OE until /WE falls. The
operating range. It is still the user’s responsibility to timing of both /CE- and /WE-controlled write cycles
ensure that VDD is within data sheet tolerances to is shown in the electrical specifications.
prevent incorrect operation.
Write access to the array begins asynchronously after
The FM18L08 is designed to operate in a manner the memory cycle is initiated. The write access
similar to other bytewide memory products. For users terminates on the rising edge of /WE or /CE,
familiar with SRAM, the performance is comparable whichever is first. Data set-up time, as shown in the
but the bytewide interface operates in a slightly electrical specifications, indicates the interval during
different manner as described below. For users which data cannot change prior to the end of the write
familiar with EEPROM, the obvious differences access.
result from the higher write performance of FRAM
technology including NoDelay writes and from Unlike other truly nonvolatile memory technologies,
unlimited write endurance. there is no write delay with FRAM. Since the read
and write access times of the underlying memory are
Read Operation the same, the user experiences no delay through the
bus. The entire memory operation occurs in a single
A read operation begins on the falling edge of /CE.
bus cycle. Therefore, any operation including read or
At this time, the address bits are latched and a
write can occur immediately following a write. Data
memory cycle is initiated. Once started, a full
polling, a technique used with EEPROMs to
memory cycle must be completed internally
determine if a write is complete, is unnecessary.
regardless of the state of /CE. Data becomes available
on the bus after the access time has been satisfied.
Precharge Operation
After the address has been latched, the address value The precharge operation is an internal condition
may be changed upon satisfying the hold time where the state of the memory is prepared for a new
parameter. Unlike an SRAM, changing address values access. All memory cycles consist of a memory
will have no effect on the memory operation after the access and a precharge. The precharge is user
address is latched. initiated by taking the /CE signal high or inactive. It
Rev. 3.4
July 2007 3 of 13
FM18L08
must remain high for at least the minimum precharge address on the falling edge of /CE, users cannot
timing specification. ground it as they might with SRAM.
The user dictates the beginning of this operation since Users who are modifying existing designs to use
a precharge will not begin until /CE rises. However, FRAM should examine the memory controller for
the device has a maximum /CE low time specification timing compatibility of address and control pins.
that must be satisfied. Each memory access must be qualified with a low
transition of /CE. In many cases, this is the only
change required. An example of the signal
FRAM Design Considerations
relationships is shown in Figure 2 below. Also shown
When designing with FRAM for the first time, users is a common SRAM signal relationship that will not
of SRAM will recognize a few minor differences. work for the FM18L08.
First, bytewide FRAM memories latch each address
on the falling edge of chip enable. This allows the The reason for /CE to strobe for each address is two-
address bus to change after starting the memory fold: it latches the new address and creates the
access. Since every access latches the memory necessary precharge period while /CE is high.
CE
FRAM Address Address 1 Address 2
signaling
CE
SRAM
signaling Address Address 1 Address 2
Rev. 3.4
July 2007 4 of 13
FM18L08
A second design consideration relates to the level of power cycles assuming the MCU/MPU pin tri-states
VDD during operation. Battery-backed SRAMs are during the reset condition. The pullup resistor value
forced to monitor VDD in order to switch to battery should be chosen to ensure the /CE pin tracks VDD yet
backup. They typically block user access below a a high enough value that the current drawn when /CE
certain VDD level in order to prevent loading the is low is not an issue.
battery with current demand from an active SRAM.
The user can be abruptly cut off from access to the VDD
memory in a power down situation without warning.
R FM18L08
FRAM memories do not need this system overhead.
The memory will not block access at any VDD level. CE
The user, however, should prevent the processor from MCU/ WE
accessing memory when VDD is out-of-tolerance. The MPU
common design practice of holding a processor in OE
reset during powerdown may be sufficient. It is A(14:0)
recommended that Chip Enable is pulled high and DQ
allowed to track VDD during powerup and powerdown
cycles. It is the user’s responsibility to ensure that
chip enable is high to prevent accesses below VDD Figure 3. Use of Pullup Resistor on /CE
min. (3.0V). Figure 3 shows an external pullup
resistor on /CE which will keep the pin high during
Rev. 3.4
July 2007 5 of 13
FM18L08
Electrical Specifications
Rev. 3.4
July 2007 6 of 13
FM18L08
Rev. 3.4
July 2007 7 of 13
FM18L08
3300Ω
Output
50 pF
t RC
t CA t PC
CE
t AH
t AS
A0-14
t OE
OE
t OHZ
DQ0-7
t CE t HZ
t WC
t CA t PC
CE
t AH
t AS
A0-14
t WS t WH
WE
OE
t DS t DH
DQ0-7
Rev. 3.4
July 2007 8 of 13
FM18L08
t WC
t CA t PC
tC W
CE
t AH
t AS
A0-14
t WS t WH
t WP
WE
OE
t WZ t WX
DQ0-7
out
t DH
t DS
DQ0-7
in
VDD VDD
VDD
min min
t PD
t PC t PU
CE
Rev. 3.4
July 2007 9 of 13
FM18L08
Mechanical Drawing
0.25
Pin 1 0.75
0?- 8?
1.27 typ 0.10
0.10 0.40
0.33 0.30 1.27
0.51
Legend:
XXXX= part number, S=speed (-70), P= package type (-SG)
RAMTRON R=rev code, YY=year, WW=work week, LLLLLL= lot code
XXXXXXX-S-P
RYYWWLLLLLLL
Example: FM18L08, 70ns speed, “Green” SOIC package,
B rev., Year 2006, Work Week 30, Lot code 50013G
RAMTRON
FM18L08-70-SG
B063050013G
Rev. 3.4
July 2007 10 of 13
FM18L08
0.485
0.580
PIN 1
1.380 0.600
0.125
1.565 0.625
0.015 0.195
min. 0.250 max
Legend:
XXXX= part number, S=speed (-70), P= package type (-PG)
RAMTRON R=rev code, YY=year, WW=work week, LLLLLL= lot code
XXXXXXX-S-P
RYYWWLLLLLLL
Example: FM18L08, 70ns speed, “Green” DIP package,
B rev., Year 2006, Work Week 30, Lot code 50013G
RAMTRON
FM18L08-70-PG
B063050013G
Rev. 3.4
July 2007 11 of 13
FM18L08
Legend:
XXXXXX= part number, SP= speed/package (-70TG)
RAMTRON R=rev code, YY=year, WW=work week, LLLLLL= lot code
XXXXXXX-SP
YYWWLLLLLL
Example: FM18L08-70-TG, “green” TSOP package,
B rev., Year 2006, Work Week 51, Lot 60012T2
RAMTRON
FM18L08-70TG
B065160012T2
Rev. 3.4
July 2007 12 of 13
FM18L08
Revision History
Rev. 3.4
July 2007 13 of 13