PN Junction Diode Characteristics

Course Code : 18ECC103J Course Title : Electronic Devices

Reg. No. : RA1911004010350 Name : Abhishek Mourya
Semester : III Semester Year : II Year

Title of the Experiment: PN Junction diode characteristics

Objective:
To study the Volt-Ampere Characteristics of Silicon P-N Junction Diode and to find its cut-in voltage, static and dynamic
resistances.
Pre Lab Questions:

Abhishek Mourya RA1911004010350 Electronic Devices

 PN Junction Diode Characteristics

1.3 Experimental Screenshots:

1.3.1 Forward Bias:

Fig 1.1 Circuit diagram for Forward bias

Abhishek Mourya RA1911004010350 Electronic Devices

 PN Junction Diode Characteristics

1.3.2 Reverse Bias:

Fig 1.2 Circuit diagram for Reverse bias

1.4 Observation Table:

Abhishek Mourya RA1911004010350 Electronic Devices
 PN Junction Diode Characteristics

1.5 Graphical Representation:

1.6 Conclusion:

Abhishek Mourya RA1911004010350 Electronic Devices

 PN Junction Diode Characteristics

1.7 Post-lab Questions:

Abhishek Mourya RA1911004010350 Electronic Devices