P-CHANNEL ENHANCEMENT

ZVP2106A MODE VERTICAL DMOS FET ZVP2106A

ISSUE 2 – MARCH 94
TYPICAL CHARACTERISTICS FEATURES
* 60 Volt VDS
-3.5
* RDS(on)=5Ω
ID(On) -On-State Drain Current (Amps)

ID(On) -On-State Drain Current (Amps)

VGS= -2.0
-3.0 -20V -1.8
-18V -14V VGS=
-1.6 -10V
-2.5
-12V -1.4 -9V D
G
-2.0 -1.2 S
-10V -1.0 -8V
-1.5 -9V E-Line
-0.8 -7V
-8V TO92 Compatible
-1.0 -7V -0.6
-6V -0.4
-6V ABSOLUTE MAXIMUM RATINGS.
-0.5 -5V -5V
-0.2 -4V PARAMETER SYMBOL VALUE UNIT
0 -4V -3.5V
0
Drain-Source Voltage V DS -60 V
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10
Continuous Drain Current at T amb=25°C ID -280 mA
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Pulsed Drain Current I DM -4 A
Output Characteristics Saturation Characteristics
Gate Source Voltage V GS ± 20 V
Power Dissipation at T amb=25°C P tot 700 mW
ID(On)-On-State Drain Current (Amps)

-10 -1.6 Operating and Storage Temperature Range T j :T stg -55 to +150 °C
VDS-Drain Source Voltage (Volts)

-1.4
-8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
-1.2

-6 -1.0
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
-0.8 VDS=-10V Drain-Source Breakdown BV DSS -60 V I D=-1mA, V GS=0V
-4 Voltage
ID= -0.6
-1A
-0.4
Gate-Source Threshold V GS(th) -1.5 -3.5 V ID=-1mA, V DS= V GS
-2
-0.5A
Voltage
-0.2
-0.25A Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V
0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 Zero Gate Voltage Drain I DSS -0.5 µA V DS=-60 V, V GS=0
Current -100 µA V DS=-48 V, V GS=0V, T=125°C (2)
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics On-State Drain Current(1) I D(on) -1 A V DS=-18 V, V GS=-10V
Voltage Saturation Characteristics
Static Drain-Source On-State R DS(on) 5 Ω V GS=-10V,I D=-500mA
Resistance (1)
RDS(ON) -Drain Source Resistance (Ω)

VGS=-5V -6V -7V -8V -9V -10V Forward Transconductance g fs 150 mS V DS=-18V,I D=-500mA
10 2.6
2.4
(1)(2)
Normalised RDS(on) and VGS(th)

2.2
(o
n) Input Capacitance (2) C iss 100 pF
DS
2.0 eR Common Source Output C oss 60 pF V DS=-18V, V GS=0V, f=1MHz
5 nc
1.8 ta VGS=-10V
e sis Capacitance (2)
1.6 eR ID=-0.5A
rc
ou Reverse Transfer C rss 20 pF
1.4 n-S
ai Capacitance (2)
1.2 Dr
VGS=VDS
1.0
Gate Thresh ID=-1mA Turn-On Delay Time (2)(3) t d(on) 7 ns
old Voltage VGS
0.8 (th )
Rise Time (2)(3) tr 15 ns
1 0.6 V DD ≈-18V, I D=-500mA
-40 -20 0 20 40 60 80 100 120 140 160 180
-0.1 -1.0 -2.0 Turn-Off Delay Time (2)(3) t d(off) 12 ns
ID-Drain Current (Amps) Tj-Junction Temperature (°C) Fall Time (2)(3) tf 15 ns

On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(
3-418 3-417 3
)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
 P-CHANNEL ENHANCEMENT
ZVP2106A MODE VERTICAL DMOS FET ZVP2106A
ISSUE 2 – MARCH 94
TYPICAL CHARACTERISTICS FEATURES
* 60 Volt VDS
-3.5
* RDS(on)=5Ω
ID(On) -On-State Drain Current (Amps)

ID(On) -On-State Drain Current (Amps)

VGS= -2.0
-3.0 -20V -1.8
-18V -14V VGS=
-1.6 -10V
-2.5
-12V -1.4 -9V D
G
-2.0 -1.2 S
-10V -1.0 -8V
-1.5 -9V E-Line
-0.8 -7V
-8V TO92 Compatible
-1.0 -7V -0.6
-6V -0.4
-6V ABSOLUTE MAXIMUM RATINGS.
-0.5 -5V -5V
-0.2 -4V PARAMETER SYMBOL VALUE UNIT
0 -4V -3.5V
0
Drain-Source Voltage V DS -60 V
0 -10 -20 -30 -40 -50 0 -2 -4 -6 -8 -10
Continuous Drain Current at T amb=25°C ID -280 mA
VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts)
Pulsed Drain Current I DM -4 A
Output Characteristics Saturation Characteristics
Gate Source Voltage V GS ± 20 V
Power Dissipation at T amb=25°C P tot 700 mW
ID(On)-On-State Drain Current (Amps)

-10 -1.6 Operating and Storage Temperature Range T j :T stg -55 to +150 °C
VDS-Drain Source Voltage (Volts)

-1.4
-8 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
-1.2

-6 -1.0
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
-0.8 VDS=-10V Drain-Source Breakdown BV DSS -60 V I D=-1mA, V GS=0V
-4 Voltage
ID= -0.6
-1A
-0.4
Gate-Source Threshold V GS(th) -1.5 -3.5 V ID=-1mA, V DS= V GS
-2
-0.5A
Voltage
-0.2
-0.25A Gate-Body Leakage I GSS 20 nA V GS=± 20V, V DS=0V
0
0 -2 -4 -6 -8 -10 0 -2 -4 -6 -8 -10 Zero Gate Voltage Drain I DSS -0.5 µA V DS=-60 V, V GS=0
Current -100 µA V DS=-48 V, V GS=0V, T=125°C (2)
VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts)
Transfer Characteristics On-State Drain Current(1) I D(on) -1 A V DS=-18 V, V GS=-10V
Voltage Saturation Characteristics
Static Drain-Source On-State R DS(on) 5 Ω V GS=-10V,I D=-500mA
Resistance (1)
RDS(ON) -Drain Source Resistance (Ω)

VGS=-5V -6V -7V -8V -9V -10V Forward Transconductance g fs 150 mS V DS=-18V,I D=-500mA
10 2.6
2.4
(1)(2)
Normalised RDS(on) and VGS(th)

2.2
(o
n) Input Capacitance (2) C iss 100 pF
DS
2.0 eR Common Source Output C oss 60 pF V DS=-18V, V GS=0V, f=1MHz
5 nc
1.8 ta VGS=-10V
e sis Capacitance (2)
1.6 eR ID=-0.5A
rc
ou Reverse Transfer C rss 20 pF
1.4 n-S
ai Capacitance (2)
1.2 Dr
VGS=VDS
1.0
Gate Thresh ID=-1mA Turn-On Delay Time (2)(3) t d(on) 7 ns
old Voltage VGS
0.8 (th )
Rise Time (2)(3) tr 15 ns
1 0.6 V DD ≈-18V, I D=-500mA
-40 -20 0 20 40 60 80 100 120 140 160 180
-0.1 -1.0 -2.0 Turn-Off Delay Time (2)(3) t d(off) 12 ns
ID-Drain Current (Amps) Tj-Junction Temperature (°C) Fall Time (2)(3) tf 15 ns

On-resistance v drain current Normalised RDS(on) and VGS(th) vs Temperature (1) Measured under pulsed conditions. Width=300µs. Duty cycle ≤2%
(2) Sample test.
(
3-418 3-417 3
)
Switching times measured with 50Ω source impedance and <5ns rise time on a pulse generator
 ZVP2106A
TYPICAL CHARACTERISTICS

300 300
gfs-Transconductance (mS)

gfs-Transconductance (mS)
250 250
VDS=-10V
VDS=-10V
200 200

150 150

100 100

50 50

0 0
0 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 0 -2 -4 -6 -8 -10

ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts)

Transconductance v drain current Transconductance v gate-source voltage

0
VGS-Gate Source Voltage (Volts)

100 -2

-4 VDS=
80
-20V -30V -50V
C-Capacitance (pF)

-6
60
-8
Ciss
-10
40
-12
20 Coss
-14
Crss
0 -16

0 -10 -20 -30 -40 -50 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4

VDS-Drain Source Voltage (Volts) Q-Charge (nC)

Capacitance v drain-source voltage Gate charge v gate-source voltage

3-419