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Microsensors - : Daniel Lapadatu, Sensonor Technologies
Microsensors - : Daniel Lapadatu, Sensonor Technologies
15.06.2009
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
Based on:
Adriana Lapadatu, "Microsensors",
1st e-CUBES Summer School, Uppsala Univ., 3-5 Sep. 2007,
© 2007 Infineon Technologies.
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
Physical Physical
Transducer
Input Output
Mechanical Mechanical
Thermal Thermal
Chemical Chemical
Radiant Radiant
Electrical Electrical
Magnetic Magnetic
Electrical Electrical
Mechanical ºC Thermal
M
Force, acceleration, pressure, Temperature, heat, specific
torque, flow, displacement, heat, entropy, heat flow...
velocity, level, position, tilt...
H Chemical Biosensors
N Composition, concentration, Cells, sugars, proteins,
H H hormones, antigens...
reaction rate...
Radiation Magnetic
N
Gamma rays, X-rays, ultra- S Field intensity, flux density,
violet, visible light, infrared, moment, magnetization,
microwaves, radio waves... permeability...
SECONDARY INPUTS
excitation
temperature time
voltage
linearity stability
hysteresis callibration
repeatability temp. coef.
voltage
sensitivity
ERROR SOURCES
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
Transmission speed
ABS speed
Pedal position
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
Why microsensors?
► Lower manufacturing cost (mass production, less material);
► Exploitation of the IC technology;
► Wider applicability to sensors arrays;
► Lower weight (greater portability).
Functions:
► ME: Electrical;
► MEMS: Electrical, mechanical, optical, chemical, biological, etc.
Structures:
► ME: Stationary, high density, 2D, isolated from environment;
► MEMS: Stationary and movable, low density, 3D, interfaced with
contacting media.
Maturity:
► ME: Mature design methodology, standardised, well documented;
► MEMS: No design methodology, no standards, distinct techniques.
Photoresist is
lithographically
patterned.
Underlying materials
are etched.
The process is
repeated until
completion of the
microstructure.
Deposition processes:
► Oxidation;
► Sputter deposition;
► Physical and Chemical Vapour Deposition (PVD, CVD);
► Electroplating.
Wafer Bonding.
electronics
membrane
Si
membrane poly-Si
nitride
oxide
LIGA
Si
► EDP, BETCH
Etch-stop techniques:
► Electrochemical (ECES),
► Boron (BES).
N-LAYERS
OXIDE
P-SUBSTRATE
"Bosch" process.
Eutectic bonding.
Silicon
Thermocompression bonding.
Epoxy bonding.
Arrays of sensors:
► One-function units,
– for improving reliability and
– for achieving larger output signals.
Linearity;
Long-term stability;
Hermeticity;
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
Absolute Relative
Pressure Sensors Pressure Sensors
Pad
Si Si Si
Glass Glass Glass
Pad
Si Si
Glass Glass
Capacitive:
► Deformation Displacement Capacitance change.
Resonant:
► Deformation Stress Resonance frequency change.
Optical:
► Deformation Phase change Interference pattern.
Thermal:
► Thermal conductivity change between a heat source and heat sink.
Piezo-junction effect:
► Deformation Stress Junction internal potential.
15-June-2009 Copyright © 2009 SensoNor Technologies. All rights reserved. Slide 25
Outline
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
4.1. Piezoresistive Pressure Sensors
5. Accelerometers
6. Gyroscopes
Coeffiecients of
piezoresistivity
Resistor σT
σL I σ
+ L —
σT
The structures are typically designed such that the principal in-plane stress is
along the resistor axis.
R1 R2
R0 + ∆ R R0 – ∆ R
∆R
V out V in .
R0 V out
R1 R2
V out V in . Pressure causes stress
R1 R4 R2 R3 in the membrane, thus
resistance changes.
y
compressive stress
(a, a)
σy
σx
x
y/a
y/a
(0, 0)
ΠL·σy
ΠT·σx
compressive
x-stress
Resistors size:
► Perpendicular resistors extend away from the edge;
– Example: For a 100 µm long resistor on 1 mm x 1 mm membrane,
the average stress is 60% of the value at the edge.
1 ∂S
Temperature coefficient of sensitivity, TCS: TCS = ⋅
S ∂T
1 ∂ Vout P = 0
Temperature coefficient of off-set, TCO: TCO = ⋅
Vdd ∂T
Packaging effects.
► Accelerometer Pins
(to detect rolling).
Wirebonding
SP30-type ASIC:
► ADC;
► µ-controller.
Assembly on lead-frame
in an SOIC-package.
Triple Stack
Sensor Element
ASIC
Lead-frame
On backside sealing of a
relative pressure sensor:
► Sensor processing, including wet
anisotropic etching with
electrochemical etch stop;
► Si-piezoresistors;
► Low temperature plasma
Absolute pressure sensors.
activated bonding. X-FAB Semiconductor Foundries.
oxide
nitride
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
4.2. Capacitive Pressure Sensors
5. Accelerometers
6. Gyroscopes
ε0 · Area dx⋅dy
C0 =
C= 0⋅∬ d −w ΔC ~ Pext
d0 Area 0 x, y
fixed plate
capacitor plates
Pad
dx,y
Si d0
membrane moveable plate
Glass w0
Pext wx,y
Drawbacks:
► Nonlinear response to the applied pressure,
– Difficult sensor compensation;
Parasitic capacitances:
– Usually of the same order of magnitude as the sensing capacitance, few pF.
Glass
Metal
Pgas
Cp1 Cp2
Pel
Oxide Pext Si
Glass
Anodic
bonding
Wafer
dissolution
Absolute pressure sensor.
Integrated Sensing Systems, Inc.
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
4.3. Resonant Pressure Sensors
5. Accelerometers
6. Gyroscopes
Advantages:
► The frequency output allows easy coupling to digital electronics:
high precision measurements high resolution;
► Requires only relative voltage level or phase shift measurements
more immune to interferences;
► Frequency is not dependent on electrical signals (unstable), but
rather on mechanical properties long term stability;
► Very low temperature errors (several orders of magnitude lower).
Drawbacks:
► Requires an excitation technique to initiate oscillations;
► Mechanical damping is critical;
► Inherently nonlinear more calibration points required.
Principle:
► External pressure...
tensile stress in the beam...
change of resonance
Absolute resonant pressure sensor.
frequency...
University of Wisconsin.
supply voltage adjustment
required to keep the beam vibrating.
► Capacitive detection cannot be used
(small sense capacitance compared to parasitics).
Principle:
► External pressure...
tensile stress in the beam...
change of resonance
frequency...
reflectivity change of the Optical pressure sensor.
Honeywell International Inc.
Fabry-Pérot cavity...
modulation of the reflected light.
Principle:
► External pressure...
change of shape and
stiffness of diaphragms...
change of resonance
frequency.
Absolute/relative pressure sensor.
KTH, Royal Institute of Technology.
Principle:
► External pressure...
change of gas viscosity...
change of resonance Absolute pressure sensor. Fraunhofer
frequency. Institute and University of Chemnitz.
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
Mass Pad
Si
Displacement Input signal Elastic constant
Output signal
moveable
d0
Frequency band: z
d2 x dx
M· = M·a – k·x – D· x x
Ma v
dt2 dt
undeformed
spring X M
Acceleration Speed
O M O
Fd
Fes
Input signal Damping force
k D k D
(inertial force)
The equation is solved for a pure sinusoidal acceleration a·cos(ωt). The result for
an arbitrary acceleration is obtained by superposition of such solutions.
1
f = f0· 1–
4·Q2
Capacitive:
► Deformation Displacement Capacitance change.
Tunneling:
► Deformation Displacement Barrier change.
Resonant:
► Deformation Stress Resonance frequency change.
Optical:
► Deformation Phase change Interference pattern.
Piezoelectric:
► Deformation Generation of electrical charges.
15-June-2009 Copyright © 2009 SensoNor Technologies. All rights reserved. Slide 62
Outline
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
5.1. Piezoresistive Accelerometers
6. Gyroscopes
Drawbacks:
► Larger temperature sensitivity;
► Lower mechanical sensitivity;
► High power consumption.
SA50:
► 2-axes crash sensor.
SAC60:
► 1-axis side crash sensor.
SA50 (above) and SAC60 (below) crash sensors.
SensoNor Technologies AS.
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
5.2. Capacitive Accelerometers
6. Gyroscopes
Drawbacks:
► Susceptible to electromagnetic interference,
– Shielding and suitable packaging required;
► Nonlinear output;
► Somewhat more difficult process.
Gap-closing
Gap-overlap Gap-closing
Gap-overlap
Differential capacitors: two capacitors that are nominally of equal size when the
moveable component is centered. Achieve linearization about the balance point.
Differential accelerometer.
KU Leuven.
Self-test
region
Fixed Movable
electrodes electrode
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
5.3. Tunneling Accelerometers
6. Gyroscopes
tunneling
reference tunneling acceleration
barrier
current gap
potential
Example:
fixed plate
Δdt = 1%
∆It = 4.5%
dt
IB moveable plate tip Tunneling gap dt must
be less than 10 Å.
► Epoxy bonding;
► Electrostatic actuation;
► Resolution: 10 ng. Damping
holes
Deflection Tip Mass
Principle: Electrode Electrode
► Acceleration... SiO2
change of tip position...
change of tunneling Si3N4
current...
change of feed-back bias.
Au
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
5.4. Resonant Accelerometers
6. Gyroscopes
Low drift read-out and control circuitry with high sensitivity, low
noise level and large dynamic range.
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
ac = 2 · v × Ω
z z
Ω Ω
y
ac y
v
ac v
x x
ac = 2 · v × Ω
Zero-rate output;
Example:
Angle (arbitrary units)
ARW = 1º/√s
Output spread = 1º after 1 sec.
Output spread = 10º after 100 sec.
1/f
long-time
noise
drift
white noise
Sense Rotation
vibrating about z
mode
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
6.1. Tuning-Fork Gyroscopes
Detection modes:
► As differential bending of prongs;
Rotation
► As torsional vibration of stem. about y
Detection principles:
► Capacitive;
Frequency tuning:
► Piezoresistive; Maximum sensitivity is
► Piezoelectric; achieved when the excitation
and detection resonance
► Optical, frequencies are equal.
– Most sensitive and most expensive.
Double-gimbal gyroscope.
The Charles Stark Draper Laboratory, Inc.
Assembly on lead-frame
in an SOIC-package.
Epoxy Moulded
Package
Pins
Lead-frame
electrode
Fel
beam
mass parasitic
movement
useful
movement
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
6.2. Disk Gyroscopes
Detection principles:
► Capacitive, Rotation
about z
– Possibility to operate in closed-loop;
► Piezoresistive;
► Piezoelectric;
Frequency tuning:
► Optical.
Maximum sensitivity is
achieved when the excitation
and detection resonance
frequencies are equal.
1. Classification of Sensors
2. Applications
3. MEMS Technologies
4. Pressure Sensors
5. Accelerometers
6. Gyroscopes
6.3. Hemispherical Resonant Gyroscopes
Detection mode:
Drive
► As torsional vibration of hinge(s). vibrating
mode
Detection principles:
Sense
► Capacitive; vibrating
mode
► Piezoresistive;
► Piezoelectric.
The "Wineglass" oscillator
► Capacitive sensing:
In-plane vibration of ring,
– Elliptically-shaped secondary
flexural mode, located 45º apart
from primary mode;
15-June-2009 Copyright © 2009 SensoNor Technologies. All rights reserved. Slide 100
Gyroscope Future Trends
Large volume production of low-cost, high-performance, highly
reliable micromachined gyroscopes.
15-June-2009 Copyright © 2009 SensoNor Technologies. All rights reserved. Slide 101
Thank you
for your attention !
15-June-2009 Copyright © 2009 SensoNor Technologies. All rights reserved. Slide 102