Electronics and Communications in Japan, Part 2, Vol. 88, No.
6, 2005
Translated from Denshi Joho Tsushin Gakkai Ronbunshi, Vol. J87-C, No. 12, December 2004, pp. 1030–1037
Analysis of Frequency Selective Surface with Arbitrarily
Shaped Element by Equivalent Circuit Model
Masataka Ohira, Hiroyuki Deguchi, Mikio Tsuji, and Hiroshi Shigesawa
Faculty of Engineering, Doshisha University, Kyotanabe, 610-0321 Japan
SUMMARY
This paper presents an analysis of the characteristics
of the frequency selective surface (FSS) by means of
equivalent circuit models. In order to determine the circuit
element parameters of the FSS with resonant elements of
arbitrary shape, the eigenvalue problem of the matrix equa-
tion is solved and the Q curve of each resonance is derived
from the frequency dependence of the reactance obtained
from the characteristic current distributions at resonance.
By equating this Q curve with that for the equivalent circuit,
the circuit parameters are derived. As an example of analy-
sis by the present method, the circuit element parameters of
patch-type resonant elements designed by us using the
genetic algorithm (GA) are derived. The characteristics of
the dielectric-loaded FSS for the C/Ka band are analyzed
by means of the equivalent circuit. The usefulness of the
proposed method is verified by comparison of the fre-
quency characteristics obtained by the method of moments
and by the equivalent circuit. © 2005 Wiley Periodicals,
Inc. Electron Comm Jpn Pt 2, 88(6): 9–17, 2005; Published
online in Wiley InterScience (www.interscience.wiley.
com). DOI 10.1002/ecjb.20162
Key words: frequency selective surface; charac-
teristic current distribution; resonance; equivalent circuit
model.
Contract grant sponsor: Supported in part by a Grant-in Aid for Scientific
Research (C) (2) (13650439) from the Japan Society for the Promotion of
Science and by the Aid of Doshisha University’s Research Promotion
Fund.
9
1. Introduction
Frequency selective surfaces (FSS) are two-dimen-
sional periodic structures of resonant elements. Recently,
multiband operations with a single-layer configuration
have been attempted by developing resonant elements with
multiple resonant frequencies [1–3]. We have also opti-
mized the resonant element shape by using a combination
of a GA (genetic algorithm) and a geometry-refinement
technique, so that broadband reflection characteristics with
two resonant frequencies are realized [4, 5]. On the other
hand, the design and analysis of FSS by means of the
equivalent circuit model have been reported [6–8]. Re-
cently, the equivalent circuit model for a dipole array with
broadband characteristics has been proposed [9]. Using an
equivalent circuit makes it possible to analyze and design
the FSS utilizing not only resonance of the elements but
also that of dielectric for supporting FSS at a higher speed
than in electromagnetic field analysis by the method of
moments. Hence, it is much easier to obtain design perspec-
tives. However, when multiband FSS is designed using an
equivalent circuit of the previous resonant elements, there
is a limitation in extending the bandwidth [6–8]. The dipole
elements have a significant dependence on the incident
polarization [9]. Hence, as shown by us in an optimization
design, it is useful to employ resonant elements obtained
by a GA. However, such elements have complex shapes and
thus the derivation of the circuit parameters is difficult. As
a result, it is necessary to establish a method of easily
deriving the circuit parameters in such a way that the
resonant mechanism of the resonant elements is under-
stood.
© 2005 Wiley Periodicals, Inc.
 In this paper, a new method is proposed in which
eigenvalue analysis is first used for understanding the reso-
nant mechanism of the FSS [10, 11] and then the circuit
element parameters are extracted on the basis of the char-
acteristic current distributions obtained from eigenvalue
analysis. In this method, the characteristic current distribu-
tion is derived from the eigenvalue problem of the matrix
equation obtained by the method of moments. The circuit
parameters are obtained so that the Q curve obtained from
the equivalent circuit can be fitted to that derived from the
frequency characteristics of the reactance based on the
characteristic current distributions. In the present method,
the Q curve of each resonance can be individually derived
from the characteristic current. Therefore, the circuit pa-
rameters of arbitrarily shaped elements with multiple reso-
nant frequencies can be obtained easily. As an example of
analysis by the present method, the circuit parameters are
extracted for patch resonance elements designed by a GA.
Fig. 1. An example of free-standing FSS.
By means of the equivalent circuit, the characteristics of the
dielectric-loaded FSS for the C/Ka band are determined.
Finally, the effectiveness of the proposed method is verified
by comparison between the frequency characteristics ob-
tained by solving the matrix equation directly by the
reactance XLi for Li and the normalized capacitive suscep-
method of moments and those obtained from the equivalent
tance BCi for Ci can be expressed in terms of X{TMTE and
}
circuit.
B{TM} of infinitely long conducting strips placed peri-
TE

odically, as follows [6–9]:

2. Analysis by an Equivalent Circuit Model
2.1. Resonance circuit
The FSS dealt with in this paper is a dielectric-loaded
FSS in which the FSS layer is embedded in the dielectric
substrate. Its frequency characteristic is analyzed by means
of a circuit model. In the present paper, only a patch-type
FSS consisting of conductive patch elements as shown in
Fig. 1 is discussed. The resonant elements have 90° rota-
tional symmetry in order to reduce the incident polarization
dependence. The periodic spacing in both the x and y
directions is d. The circuit parameters of the equivalent
circuit model of the dielectric-loaded FSS are derived from
the resonance characteristics of the free-standing FSS with-
out dielectric loading.
Let us consider the equivalent circuit of the patch-
type FSS when a plane wave is incident upon the FSS at an
angle of θ. Figure 2 presents the relationship between the
incident electric field and the periodically placed infinitely
long conductor strip. If the infinitely long strip is parallel
to the polarization direction of the electric field, the strip is
inductive, while it is capacitive if the strip is orthogonal to
the polarization. Hence, if an equivalent circuit of the FSS
is constructed by a combination of these two, the equivalent
circuit of the patch-type FSS is expressed as a series circuit
of Li and Ci as shown in the figure, where the subscript i
denotes the i-th resonance. Hence, the normalized inductive
(1a)
(1b)
Here, the following relationships exist [12]:
(2a)
(2b)
The frequency range for the above equations is less than
that for onset of the grating lobe given by d(1 + sinθ)/λ < 1
(where λ is the free space wavelength). The subscripts TE
and TM denote TE wave incidence (in which the incident
electric field is normal to the x–z plane) and TM wave
incidence (in which the incident electric field is parallel to
the x–z plane); gi is the equivalent element spacing, wi is the
equivalent element line width, and li (= d − gi) is the equiva-
lent element length. Since gi, wi, and li are treated as equiva-
lent lengths, it is assumed that 0 < gi, wi, li < d. Also, li/d in
Eqs. (1a) and (1b) is a correction factor used to derive L and
C per period. Once these gi, wi, and li are determined, the
circuit element parameters can be obtained. The resonance

10

Fig. 2. Equivalent circuit of patch-type FSS.
characteristics can be calculated with the reactance values
obtained from Eq. (1a) and (1b). Further, once gi, wi, and
li are derived in a form normalized to the periodic spacing
d, these quantities can be used in case of the dielectric
loading. However, there is a limited number of resonant
elements for which gi, wi, and li are determined from only
the element shapes as shown in Fig. 1. The determination
is not simple for complicated shapes such as those obtained
by the GA [4, 5]. Hence, in this paper, the technique
presented in the next section is used.
2.2. Derivation of circuit element parameters
In the equivalent circuit model, the resonance char-
acteristics of the FSS are determined by the values of L and
C. In the electromagnetic phenomena, the resonance is
determined by the resonant element shape. As described
later, the resonance characteristics in a complex geometry
can be derived by eigenvalue analysis [10, 11]. Therefore,
in this paper the equivalent circuit parameters are extracted
from the results of eigenvalue analysis. The eigenvalue
equation can be derived from the matrix equation [V] =
[Z][I] obtained by the method of moments [11, 13]. The
resonant frequency of the free-standing FSS can be derived
from the eigenvalue equation for the frequency f as follows:
(3)
where det stands for a matrix equation and the matrix [X]
is constructed from the imaginary part of the matrix [Z].
The dimension of the matrix is determined by the resonant
element shape. Here, the frequencies obtained from Eq. (3)
contain the antiresonant frequencies in addition to the reso-
nant frequencies.† Therefore, the resonant frequencies are
obtained by eliminating the solutions of the eigenvalue
equation det[Z(f)] = 0 from those of Eq. (3). The charac-
teristic current distribution at the resonant frequency is
obtained by solving
†
Antiresonance is a phenomenon in which the electric field scattered by
the FSS becomes zero at θ = 0°. In oblique incidence, reflection and
transmission are switched in a very narrow bandwidth [10, 14]. In Ref. 6,
this is reported as “anomalous resonance.”
11
(4)
Here the row vector [I] denotes the unknown coefficients
for the subdomain basis functions used in the expansion to
express resonant elements of arbitrary shape [13]. Note that
the degenerate characteristic current distribution can easily
be obtained if the characteristic currents are obtained by
means of singular value decomposition of the matrix [15].
Once the characteristic current distribution of the i-th reso-
nance is obtained, the reactance Xi of the FSS at normal
incidence can be calculated by the following equation ob-
tained by Galerkin’s method (see Appendix):
(5)
where
(6)
Here ξ(= x, y) denotes the component orthogonal to the
incident polarization. The asterisk denotes the complex
≈
conjugate and the tilde the Fourier transform. G is the
dyadic Green’s function in free space with the infinite
periodic boundary condition applied, and (p, q) indicates
the order of the Floquet mode and Ji is the characteristic
current. In particular, two characteristic currents Jai and
Jbi are degenerate in the resonant element with 90° rota-
tional symmetry. Here, Ji can be expressed as a linear
combination Ji = caiJai + cbiJbi. Note that cai and cbi are
amplitude coefficients and are determined in such a way
that Eq. (6) is satisfied. The frequency characteristics can
be calculated from only the characteristic currents at the
resonance. Even for elements with multiple resonant fre-
quencies, each resonance characteristic can be obtained
independently by means of Eq. (5).
Once the characteristic current distributions at the
resonant frequencies are derived from Eq. (4), the Q curve
derived from Eq. (1) is fitted to that of the reactance
characteristics derived from Eq. (5). Then, the equivalent
element spacing gi and the element line width wi can be
determined. Specifically, if gi and wi are found as shown in
Fig. 3 so as to make the resonant frequency and the 3-dB
width of these two Q curves coincide, then the equivalent
circuit parameters shown in Fig. 2 can be derived.
2.3. Frequency characteristics with dielectric
loading
Once the equivalent circuit parameters are obtained,
the frequency characteristics can be calculated from distrib-
uted circuit theory as shown in Fig. 4 when a dielectric is
mounted. In this paper, we consider only the case in which

Fig. 3. Extraction of equivalent-circuit parameters of a
patch-type FSS.
the dielectric material has a thickness such that the effect of
the evanescent modes can be neglected. Hence, considering
that the resonant frequency is 1/√ εr (εr is the relative
permittivity) [16], the capacitive susceptance BCi of the
free-standing FSS is multiplied by εr in the circuit parame-
ter calculation. If multiple resonant points exist, then the
reactance of the equivalent circuit is expressed as
Xr = X1//X2// . . . . Therefore, the fundamental matrix for the
equivalent circuit of the dielectric-loaded FSS is
(7)
Here, we note that, according to Ref. 9,
In the above, k0 is the wavenumber in free space and h is
the thickness of the dielectric material. Since the frequency
characteristics of the dielectric-loaded FSS can be calcu-
lated by means of the equivalent circuit model as described
above, the optimum period d and dielectric thickness h can
12
Fig. 4. Equivalent circuit of FSS embedded in a
dielectric.
be determined easily and quickly, so that the FSS can
operate in the desired frequency range.
3. Examples of Analysis
3.1. Free-standing FSS
As an example of analysis by the present method, the
circuit parameters of a patch-type resonant element ob-
tained by the GA-optimization design shown in Fig. 5 [5]
are derived. The free-standing FSS consisting of these
resonant elements with a periodic spacing of d = 8 mm can
operate at the S band (2.5 GHz band) and the Ka band
(20/30 GHz) at an angle of incidence of θ = 0° to 10°. First,
the resonant frequencies of the FSS shown in Fig. 5 are
found to be d/λ = 0.525 and 0.762 by eigenvalue analysis
Fig. 5. Resonant element obtained by GA-optimization
design.
and there are two resonances. Hence, the equivalent circuit
of the patch-type FSS designed by the GA is that shown in
Fig. 6. The characteristic current distributions of the first
resonance d/λ = 0.525 are shown in Fig. 7 and those at the
second resonance d/λ = 0.762 are shown in Fig. 8. The
vectors in the figures indicate the magnitude and direction
of the current. As described earlier, the two characteristic
currents are degenerate at resonance. It is found that the
regions surrounded by thick lines make the main contribu-
tion to the resonance phenomena. The amplitude ratio
cai : cbi of the linear combination of the two degenerate
characteristic current distributions can be derived from Eq. Fig. 7. Eigen current distributions at the first resonance
(6). Then, if the incident polarization is in the y direction, d/λ = 0.525: (a) Ja1 and (b) Jb1.
ca1 : cb1 = 1.00 : 1.03 at the first resonance and
ca2 : cb2 = 1.00 : 1.63 at the second resonance. The ratios
are inverted if the incident polarization is in the x direction.
It is confirmed that the current distributions obtained by
these linear combinations are identical to the current distri- results described later. The effective frequency range is up
butions obtained if the unknown currents are directly de- to 18.75 GHz, at which the grating lobe appears for normal
rived by the method of moments (however, the comparison incidence. If the difference due to the grating lobe is ex-
is made in terms of the relative amplitude rather than the cluded, the agreement of the two is excellent. Also, even if
absolute amplitude). Hence, as described in the previous the current distributions are not derived by solving the
section, the effective element line width wi, element spacing matrix equation at each frequency, the resonance charac-
gi, and element length li of the free-standing FSS are derived teristics can easily be obtained once the characteristic cur-
in such a way that the Q curves given by Eqs. (1) and (5) rents are found. Figure 10 shows a comparison of the
agree with a frequency resolution of about 0.1% (normal- frequency characteristics of the free-standing FSS derived
ized to the resonant frequency). The results are as follows. by directly solving the matrix equation by the method of
First resonance: moments [13] and those derived by the equivalent circuit
model. The characteristics agree well not only near the
resonant frequencies, but also at the transmission point
Second resonance: between the two resonant frequencies. In Fig. 10, the ex-
perimental values of the free-standing FSS are also shown.
Considering the shift toward the higher frequency side due
to fabrication errors, the numerical and experimental results
The resonance characteristics obtained by Eqs. (1a) and agree well over the frequency range. Hence, the frequency
(1b) with the above are compared in Fig. 9 with those characteristics of the patch-type resonant elements opti-
calculated by Eq. (5) with the characteristic currents. The
mally designed by the GA can be expressed by means of
periodic spacing used in the calculation of the charac-
teristics is d = 16 mm for comparison with the experimental

Fig. 6. Equivalent circuit of the resonant element Fig. 8. Eigen current distributions at the second
illustrated in Fig. 5. resonance d/λ = 0.762: (a) Ja2 and (b) Jb2.

13
 band (20/30 GHz band) for an angle of incidence of θ = 0°
to 20°. In the dielectric-loaded FSS, a free-standing FSS
shown in Fig. 5 is embedded at the center of the dielectric
material as shown in Fig. 4. The periodic spacing d and the
thickness h of the dielectric material are determined by
optimization in such a way that the insertion loss in the C

Fig. 9. Comparison of resonant characteristic between

the eigen current and the equivalent circuit (d = 16 mm):
(a) the first resonance and (b) the second resonance.

the equivalent circuit of infinitely long conductive strips

placed periodically.

3.2. Dielectric-loaded FSS

Let us next consider a dielectric-loaded FSS that

transmits the C band (4/6 GHz band) and reflects the Ka

Fig. 11. Comparison of frequency characteristics of

FSS embedded in dielectric between the equivalent
circuit model (ECM) and the method of moments (MoM)
Fig. 10. Comparison of transmission characteristic of (d = 4.09 mm, h = 9.79 mm, εr = 3.8): (a) Normal
free-standing FSS between the equivalent circuit model incidence, (b) TE-wave incidence at θ = 20°, and (c)
(ECM) and the method of moments (MoM) (d = 16 mm). TM-wave incidence at θ = 20°.

14
band and the return loss in the Ka band are minimized. In
the optimization process, the transmission coefficient in the
transmission band and the reflection coefficient in the re-
flection band are evaluated for both TE and TM wave
incidences at the angle of incidence of 0 to 20°. The squared
sum of the worst values in each band is used as the cost
function. The relative permittivity is εr = 3.8. As a result, a
periodic spacing of d = 4.09 mm and a dielectric thickness
of h = 9.79 mm are obtained.
Figure 11 presents a comparison of the frequency
characteristics obtained from the equivalent circuit with
dielectric loading and those obtained by direct solution of
the matrix equation by the method of moments taking
account of the dielectric material. In the results obtained by
the method of moments, there are variations in the charac-
teristics at frequencies higher than 30 GHz caused by
surface wave propagation. However, the overall frequency
characteristics agree well. Near 14 GHz for TE wave
oblique incident and 25 GHz for TM oblique incidence,
there is a difference in the characteristics. This is caused by
the fact that antiresonance phenomena are not taken into
account in the present equivalent circuit. In the Ka band,
reflection bands are constructed by two resonances at 20
and 30 GHz of the resonant elements. Also, in the C band,
the transmission band is constructed by two resonances of
the dielectric for supporting FSS. In this band, the FSS can
be considered as an inverter that connects two dielectric
resonators at both sides of the FSS since the phases of the
inverter and the dielectric cancel each other. It is clear from
Fig. 11 that the dielectric-loaded FSS has weak dependence
on the angle of incidence and the incident polarization, so
that multiple frequency band operation is realized. As seen
above, the frequency characteristics of the dielectric-loaded
FSS derived by the equivalent circuit model and those
derived by the method of moments agree well with each
other. Hence, it is shown that the analysis of the charac-
teristics by the equivalent circuit model as presented above
is effective.
4. Conclusions
In order to determine the equivalent circuit parame-
ters of a patch type FSS with resonant elements of arbitrary
shape, a method is presented for derivation of the circuit
element parameters from the characteristic current distribu-
tions of the free-standing FSS obtained by solving the
eigenvalue problem of the matrix equation. As examples of
analysis by the proposed method, the equivalent circuit
parameters of a patch-type resonant element optimally de-
signed by us using a GA are derived. With the obtained
circuit element parameters, the characteristics of the C/Ka-
band dielectric-loaded FSS are analyzed. The frequency
characteristics of the dielectric-loaded FSS obtained by the
15
equivalent circuit model agree well with those obtained by
direct solution of the matrix equation by the method of
moments. Hence, the effectiveness of the proposed method
is confirmed. An effort will be made in the future to derive
the equivalent circuit parameters at anti-resonance.
Acknowledgments. This work was supported in
part by a Grant-in Aid for Scientific Research (C) (2)
(13650439) from the Japan Society for the Promotion of
Science and by the Aid of Doshisha University’s Research
Promotion Fund.
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APPENDIX
Derivation of Eq. (5) [17]
Let us briefly explain the derivation of Eq. (5). Here,
the FSS is assumed to be a free-standing type as shown in
Fig. 1. At frequencies below the onset of the grating lobe,
only the fundamental Floquet mode (p, q) = (0, 0) can
propagate. Therefore, the reflected wave can be expressed
as
AUTHORS
Masataka Ohira (student member) received his B.E. and M.E. degrees from Doshisha University in 2001 and 2003 and
enrolled in the doctoral program. His current research activities are concerned with the analysis and design of frequency selective
surfaces and their applications. He is a member of the Institute of Electrical Engineers of Japan and IEEE.
16
(A.1)
where R = (Rx, Ry) is the reflection coefficient and kxp, kyq,
and kzpq are the components of the wave number. Hence,
from the boundary condition that the tangential compo-
nents of the electric field are zero on the resonant elements,
the electric field integral equation is expressed as
(A.2)
Here E0 = (Ex, Ey) is the incident electric field. The inner
product of both sides of the above equation with the current
J*(x, y) is taken and the result is integrated. Then, both sides
~
are divided by 2J∗(0, 0) ⋅ R. The left-hand side is
(A.3)
When condition (6) is imposed on Eq. (A.1) with an inci-
dent electric field of magnitude 1 and the cross polarization
components are neglected, we obtain
(A.4)
This is the reactance jX of the FSS when the conductor is
assumed lossless. The right-hand side is given by Eq. (5).
The real part of the right-hand side is much smaller than the
imaginary part and is neglected.
 AUTHORS (continued) (from left to right)

Hiroyuki Deguchi (member) received his B.E., M.E., and D.Eng. degrees from Doshisha University in 1986, 1988, and
1999. From 1988 to 2000 he was with Mitsubishi Electric Corporation, where he engaged in research and development of very
large reflector antennas, deployable antennas, horn antennas, and radome antennas. Since 2000 he has been with Doshisha
University, and is now an associate professor. His current research activities are concerned with microwave and millimeter-wave
aperture antennas and antenna measurements. He is a member of the Institute of Electrical Engineers of Japan and IEEE. He
received the IEICE Young Engineer Award in 1992.

Mikio Tsuji (member) received his B.E., M.E., and D.Eng. degrees from Doshisha University in 1976, 1978, and 1985
and is now a professor there. His present research activities are concerned with microwave and millimeter-wave guiding
structures and devices and scattering problems of electromagnetic waves. He is a member of the Institute of Electrical Engineers
of Japan and IEEE.

Hiroshi Shigesawa (member, fellow) received his B.E., M.E., and D.Eng. degrees from Doshisha University in 1961,
1963, and 1969 and is now a professor on the Faculty of Engineering. From 1979 to 1980, he was a visiting scholar at the
Microwave Research Institute, Polytechnic Institute of New York. His present research activities involve microwave and
millimeter-wave guiding structures and devices and scattering problems of electromagnetic waves. He is a member of the
Institute of Electrical Engineers of Japan, Optical Society of America, and an IEEE fellow.

17