EE 434 Power Electronics Lecture 2: Characteristics of an Ideal Switch Dr. Akrama Khan (GS «4 55) Assistant Professor Dept. of Electrical Engineering Ghulam Ishaq Khan Institute of Engineering Sciences and TechnologyCharacteristics of an Ideal Switch Al. = During the turn-on or turn-off process, it must be completely turned on or off instantaneously to operate at high frequencies. So it must have a low delay time, low rise time, low storage time, and a low fall time. For turn-on or turn-off, it must require a low gate-drive power, a low gate drive voltage or a low gate drive current. Both turn-on and turn-off must be controllable. Thus it must turn on with a gate signal (i.¢., positive) and must turn off with another gate signal (i.e, zero or negative) High dv/dt, that is switch must be capable of handling rapid change of voltage across it High di/dt, that is switch must be capable of handling a rapid rise of current through it. Low Thermal Resistance or High Thermal Conductivity Negative Temperature coefficient Low priceIdeal Switch Characteristic Features 1. In on-state: (closed) -O< jsw < %, Vsw=0, Ron-state= 0 2. In off-state: (open) -O< Vew < ©, isw=0, Roff-state= °° 3. ic=O: Control Power =0 4. On to off in zero time Off to on in zero time ic 2 Yow ev 81 bey ow 2 eu off t Usa "t P t Conduchon Liss = 0 =O suit hing lexIdeal Switch ; fe a Static Characteristics a ia a, atate) ; off. ~Aale operating pera (x-axir)Characteristics of Practical Devices + Real devices, as we intuitively expect, do not have ideal characteristics and hence will dissipate power when they are used in numerous applications. + If they dissipate too much power the device can fail and, in doing so, not only will destroy themselves but also may damage other system components.Practical Switch a | ve Characteristic Features ¢ ; 1. In on-state: (closed) -- L Imin < isw < Imax, Vsw#0, Ron-state # 0 2. In off-state: (open) Vinin < Vsw< Vmax, isw # 0, Roff-state # 0 3. Switching time: ton+toff 4. Power loss: Conduction loss es t Switching loss alPower Losses The average conduction power loss, Peong is given by: 1 a1 Poond = =| pdt 1/40 Where fi denotes the conduction period and p is the instantaneous power loss (i.e. product of voltage drop Vey across the switch and the conducted current /,,,.) Power losses increase during turn-on and turn-off of the switch because during the transition from one conduction state to another state both the voltage and current have significant values. The resulting power loss P,,, during the turn-on and turn-off i j jr . ton to, periods, is given by: Paw = fw [ pat + fw [ pdt Therefore, the total power loss ‘ofa switching device Ptot is: Prot = PeonatPswClassification of Switch On the basis of Controlling pide 1. Uncontrolled Switch: A 7 ABS Va >Ve VAS VK, at ret conduc 2. Semi-controlled Switch: which can be controlled “© K SCR only in one state. ~ Vax <9 6 Vax >0 (off) igt e rt 3. Fully controlled Switch: (hy | “ff ) both switching states can be controlled eg Trimrinl vs TylonClassification of Switch On the basis of Blocking Voltage 1. Uni-polar Switch: ia, Bs 5 which can block only one Died polarity of the voltage i Va > Vie Vae VK (140) (t=0,V#0) 2. Bi-polar Switch: Scr A pk which can block both voltage polaniies Vak> 0 van <0 (i920) (black eV) (block -ve V) (Kigd 0)Classification of Switch On the basis of Current Flow 1. Uni-directional Switch: Divde , SOR which allows the current to Pt flow in one direction , M , GTO ¢, 2. Bi-directional Switch: A TRIAL which allows the current to flow in both direction RCT Th z ‘Tel K = (Arwerre eonduching)Characteristics of commonly used semiconductor devices Diode Silicon Gate oo Controlled Turn-Off Unidirectional Rectifier Un-controlled Unidirectional + Unidirectional Unipolar Semi-controlled | * Fully-controlled A % x * Bipolar * Bipolar + Ve - Kes ya °° A , a: A + 4 - &«K I + Vax Vax I i. vCharacteristics of commonly used semiconductor switches Triode Alternating oa (MOSFET) (IGEN) ee ali | CRmaeRBna pe ciectenal i-directional Fully-controlled * Fully-controlled | * Fully-controlled : " * Bipolar Unipolar | .Jgc ae . s A Ig B B 6 Me ; Tavnthes Va Va Ge ane sh, 1 f { -% — -- < ~—+ Vv Vv VvPower Transistors 1. Bipolar Junction Transistors (BJTs) — Commonly used in power converter (<10KHz) and power ratings up to 1200V & 400A. 2. Metal Oxide Semiconductor Field Effect Transistor (MOSFETs) —Commonly used in high speed power converter at relatively low power ratings in the range of 1000V & 100A at frequency range of several tens of KHz. 3. Insulated Gate Bipolar Transistor (IGBT) — Commonly used for high power rating 1700V & 2400A and frequencies upto 20KHz.Control Characteristics of Power Devices Continuous Pulse Controlled Controlled ‘Unipolar —Bipolar. Unidirectional —‘Bidizectional Device Type Device Gate Gate Tum-On—Tum-Off Voltage Voltage. Current Current Diodes Power diode Transistors BIT COOLMOs ‘Thyristors SCR 3Power Ranges of the Transistors {6500 Vi600 A. 29¢0 v/1500 A wit (Eupec) “(Mitsubinhi) 7500 V/L650 A Ma] ¢ 1 oe Sf 6500 Vi2650 A BaD FG ; (ABB) 1 500 V2300 A ant ! (ABB) 4500 IGBT (market) ) ys ‘0, 000 Vi6000 A GTO 5000 3500 IGCT (market) 6000 Vi6000 AIGCT 00 (iit OCT 2500 3300 V/1200 A. ees ‘Module (Eupec) enV A: 1700 2500 V/1800 A Nese 4500 Vi4000 A. Press-Pack (Fuji) (Mitsubishi) 1 t—-—- 1700 vi2400 A rN Module (Eupec) 1000VA00A\, poner (Baie) Rowse MOSFET 200 V/s00 A 0: i (Semikron) \, oe \ covnona__\. (Semikron) is 10? 200 «$0010 2400 4000.6000 104 1[A]Ratings of th the Devices OpeApplications Power Capacity (VA) ‘Current Product Range Future Devel Plan 100K 10K 10 100 1K 10K 100K Operation frequency (Hz) Robot, Welding machine icR Power supply for audio | eresEnd of Lecture