9.3. Carrier concentration in intrinsic semiconductor ‘We know that in intrinsic semiconductors the charge carriers are nothing but electrons in the conduction band and holes in the valence band. Since these carriers are generated due to the breaking of covalent bonds, we have equal number of electrons and holes. At OK, since all the bonds are intact, the semiconductor acts as an insulator. With increase of thermal energy the covalent bonds are broken and electron-hole pairs are created. Now we have to calculate the carrier concentration namely number of electrons in the conduction band per unit volume of the material (72) as well as number of holes in the valence band per unit volume of the material (p).94 Solid State Physics 9.3.1 Calculation of density of electrons Let dn be the number of electrons available between energy interval E’and E + dE in the conduction band. <0 dn = Z(E) F(E) dE d (9.1) Where Z(E) dE is the density of states in the energy interval E and E + dE and F(E) is the electron occupancy probability i.e. the probability that a state of energy E is occupied by an electron. If E¢ is the energy corresponding to the bottom of the conduction band, to calculate the number of electrons in the conduction band the above equation (9.1) has to be integrated from E¢ to the energy corresponding to the top of the conduction band, ie, — ; = [2 Fede 2) sare wl : Here the upper limit of the integration is taken as infinity. Since the probability of electrons occupying the upper levels of conduction band reduces to’zero at infinity, we are justified in taking the upper limit of the integration as infinity. ‘We know that the density of states i.e., the number of energy states per unit volume within the energy interval E and E + dE is given by an ZB) dE = 35 Qmyp? EV? dE - 3) (Please remember that already we have multiplied this expression by 2 to account for the possibility of two electrons of opposite spin occupying any energy state, according to Pauli’s exclusion principle). Since the electron is moving in a periodic potential, its mass has to be replaced by its effective mass m3. Hence the density of electrons in the conduction band is - 4 Z(E) dE = Frome? Edge Since the E starts at the bottom of the conduction band Ec, | % x ‘Z(E) dE = Fy omyPrE -E)"? de (9.4) Probability of an electron occupying an energy state E is given by 1 V+ exp (ERE) (9.5) Ep is the energy of the Fermi level which is exactly at the centre of the forbidden energy gap in the case of intrinsic semiconductor, FE)Semiconductors 9.5 Ec + Ev * 2 : where Ec is the energy corresponding to the bottom of the conduction band and Ey is the energy corresponding to the top of the valence band. ie, Ep= : E-Ef\}"! te - FE F(E) [! +exp( 7 | For all possible temperatures E-Ep>kT . lot 9 2 Hence F(E) = exp— ( (9.6) Therefore equation (9.2) becomes co Pa Ep-E ° =| 2% 3/20 B.yU/2 ie B =: ys Comey (E — Ec) eo( = ) ae ‘ Ee 4 i Er-E an! 3/2 — E,)'/2 FT = Com’) fe Ec) exo ( 7 ae = Som mz)! oo (7 a) fe- E.)'/? exp sear (9.7) E To solve this integral, let us put E-Ee=x E=Ec+x dE =dx °° _ Fm)? exp (FE F) [sew fe ety pw / 0 e an Ep-E, 7 = FOm2)*? exp (=) fetes (Z) dx (9.8) “ . 0 kT ‘ aes 1- FE) = evo( = @.11) Density of holes in the valence band is : 4a e 2(B) dE =F (omit)? a Since Ey is the energy of the top of the valence band 4n 2B) dE =F Ome, — By? ae (9.12) To calculate the number of holes in the valence bs : . and the i integrated from ~00 to the energy corresponding to the ores (042) has to be Ey (For the sake of mathematical simplification the lowee cn verona 00). * ergy can be taken asSemiconductors 9-7 ‘The number of holes in the valence band per unit volume is given by E-EF ( a )ae 0.13) = Sony’? exw (Fe le oes (E =) ae To solve this let us take p= i > = amp)3? (Ey — BE)! ex E,-E=x, “. or ae 2» fee-niteo(f EY aa fe eo Ae 2) ax & ey (using gamma function) Hence omy? oo (HF Fr) anne *) (9.14) 9 (zak 32 (Ev =2( 7 oP en ‘This equation gives the number of holes or vacancies in the valence band per unit volume. 9.3.3. Intrinsic carrier concentration In intrinsic semiconductors n=? Hence n = P = nj is called intrinsic carrier concentration.9.8 Solid State Physics Therefore 2nkT \3 93/2, (Ev — Ec) n? = np =4 (3r) (mgm)? exp a 5 -E, 3/2 oxy EB. . -4(3) (mig)??? exp i (9.15) where Ec — Ey = Bg is the forbidden energy gap. 2nkT \3/2 i3yas E, Hence m=2(*7) (mimt)>!4 exp — orn (9.16) 9.3.4 Fermi level Since n = p in intrinsic semiconductors, 3/2 QnmskT \3/2 Ep-Ec\ _, (2nmpkT Ey —Er 2( Re ) ew BE pa Pl Sep 43/2. ER - E 3/2, Ev — Er 2) exp EAE = (np) exp Be 2Er\ _ (mi)? ey +E, -0(F)= (32) eve( kT Taking logarithms-on both sides or (mi 2Er 3yMh | (Et By AT 2 ‘Conduction band ee eee ew t tf > «oe E Ep Position of Fermi level in an intrinsic se Fig. at T = 0K the Fermi level isin the middle af va Tories tn aos temperatures: a) shifts upward since mj > m; temperature rises it 1Semiconductors 9. : 3kT mj Pott) ot ie, Er= plop e+ (5 , If we assume that mf = mj Ev+Ec 2 Thus Fermi level is located half way between the valence and conduct its position is independent of temperature. Since m? is greater than above the middle, and rises slightly with increasing temperature as st