June 1998

FDS6912A
Dual N-Channel, Logic Level, PowerTrenchTM MOSFET

General Description Features

These N-Channel Logic Level MOSFETs are 6 A, 30 V. RDS(ON) = 0.028 Ω @ VGS = 10 V
produced using Fairchild Semiconductor's RDS(ON) = 0.035 Ω @ VGS = 4.5 V.
advanced PowerTrench process that has been Fast switching speed.
especially tailored to minimize the on-state
Low gate charge (typical 9 nC).
resistance and yet maintain superior switching
performance. High performance trench technology for extremely low
These devices are well suited for low voltage and RDS(ON).
battery powered applications where low in-line
High power and current handling capability.
power loss and fast switching are required.

SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16

D2
D2 5 4
D1 S
D1 FD 2A 6
1 3
69
7 2
G2
S2
G1 8 1
SO-8 pin 1
S1

Absolute Maximum Ratings TA = 25oC unless other wise noted

Symbol Parameter FDS6912A Units
VDSS Drain-Source Voltage 30 V
VGSS Gate-Source Voltage ±20 V
ID Drain Current - Continuous (Note 1a) 6 A
- Pulsed 20
PD Power Dissipation for Single Operation (Note 1a) 2 W
(Note 1b) 1.6
(Note 1c) 0.9
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
THERMAL CHARACTERISTICS
RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) 78 °C/W
RθJC Thermal Resistance, Junction-to-Case (Note 1) 40 °C/W

© 1998 Fairchild Semiconductor Corporation FDS6912A Rev.C

 Electrical Characteristics (TA = 25 OC unless otherwise noted )
Symbol Parameter Conditions Min Typ Max Units
OFF CHARACTERISTICS

BVDSS Drain-Source Breakdown Voltage VGS = 0 V, I D = 250 µA 30 V

∆BVDSS/∆TJ
o
Breakdown Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C 23 mV /oC
IDSS Zero Gate Voltage Drain Current VDS = 24 V, VGS = 0 V 1 µA
TJ = 55°C 10 µA
IGSSF Gate - Body Leakage, Forward VGS = 20 V, VDS = 0 V 100 nA
IGSSR Gate - Body Leakage, Reverse VGS = -20 V, VDS = 0 V -100 nA
ON CHARACTERISTICS (Note 2)

VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA 1 1.5 3 V

∆VGS(th)/∆TJ
o
Gate Threshold Voltage Temp. Coefficient ID = 250 µA, Referenced to 25 C -4 mV /oC
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, I D = 6 A 0.023 0.028 Ω
TJ =125°C 0.036 0.044
VGS = 4.5 V, I D = 5 A 0.029 0.035
ID(ON) On-State Drain Current VGS = 10 V, VDS = 5 V 20 A
gFS Forward Transconductance VDS = 15 V, I D= 6 A 18 S
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 15 V, VGS = 0 V, 830 pF
f = 1.0 MHz
Coss Output Capacitance 185 pF
Crss Reverse Transfer Capacitance 80 pF
SWITCHING CHARACTERISTICS (Note 2)

tD(on) Turn - On Delay Time VDS= 15 V, I D = 1 A 6 12 ns

tr Turn - On Rise Time VGS = 10 V , RGEN = 6 Ω 10 18 ns
tD(off) Turn - Off Delay Time 18 29 ns
tf Turn - Off Fall Time 5 12 ns
Qg Total Gate Charge VDS = 15 V, I D = 7.5 A, 9 13 nC
Qgs Gate-Source Charge VGS = 5 V 2.8 nC
Qgd Gate-Drain Charge 3.1 nC
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
IS Maximum Continuous Drain-Source Diode Forward Current 1.3 A
VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.3 A (Note 2) 0.73 1.2 V
Notes:
1. RθJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RθJC is guaranteed by
design while RθCA is determined by the user's board design.

a. 78OC/W on a 0.5 in2 b. 125OC/W on a 0.02 in2 c. 135OC/W on a 0.003 in2

pad of 2oz copper. pad of 2oz copper. pad of 2oz copper.

Scale 1 : 1 on letter size paper

2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

FDS6912A Rev.C
 Typical Electrical Characteristics

40 5
VGS =10V

DRAIN-SOURCE ON-RESISTANCE
I D , DRAIN-SOURCE CURRENT (A)

5.5V
4.5V V GS = 2.5V
32 4.0V 4

RDS(ON) , NORMALIZED
24 3.5V 3
3.0 V

16 2
3.5 V
3.0V 4.5 V
8 1 10V

2.5V
0 0
0 1 2 3 4 0 6 12 18 24 30
VDS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with

Drain Current and Gate Voltage.

1.6 0.15
ID = 3A

R DS(ON) , ON-RESISTANCE (OHM)

DRAIN-SOURCE ON-RESISTANCE

I D = 6A
1.4 VGS = 10V 0.12
RDS(ON) , NORMALIZED

1.2 0.09

1 0.06
TA = 125°C

0.8 0.03
25°C

0.6 0
-50 -25 0 25 50 75 100 125 150 0 2 4 6 8 10
TJ , JUNCTION TEMPERATURE (°C) V GS , GATE TO SOURCE VOLTAGE (V)

Figure 3. On-Resistance Variation with Figure 4. On-Resistance Variation with

Temperature. Gate-to-Source Voltage.

25 20
TJ = -55°C
I S , REVERSE DRAIN CURRENT (A)

V DS =5.0V VGS = 0V
25°C
I D , DRAIN CURRENT (A)

20
125°C TJ = 125°C
1
15
25°C
0.1
10 -55°C

0.01
5

0 0.001
1 2 3 4 5 0 0.2 0.4 0.6 0.8 1 1.2 1.4
VGS , GATE TO SOURCE VOLTAGE (V) V SD, BODY DIODE FORWARD VOLTAGE (V)

Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage

Variation with Source Current
and Temperature.

FDS6912A Rev.C
Typical Electrical Characteristics

10 1500
VGS , GATE-SOURCE VOLTAGE (V)

I D = 6A V DS = 5V
C iss
10V
8
15V 500

CAPACITANCE (pF)
6
200 Coss

4 100

C rss
50 f = 1 MHz
2 V GS = 0 V

0 0.1 0.2 0.5 1 2 5 10 30

0 3 6 9 12 15 18 VDS , DRAIN TO SOURCE VOLTAGE (V)
Q g , GATE CHARGE (nC)

Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics.

100 30
50 SINGLE PULSE
IT 100 25
LIM us R θJA =135 °C/W
N)
I D , DRAIN CURRENT (A)

(O
10 R DS 1m TA = 25°C
s
20

POWER (W)
10m
s
2 10
0m 15
s
0.5 1s
VGS =10V 10s 10
DC
SINGLE PULSE
0.05 RθJA = 135°C/W 5
A
TA = 25°C
0.01 0
0.1 0.5 1 2 5 10 30 50 0.01 0.1 0.5 10 50 100 300
VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC)

Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power
Dissipation.

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 R θJA (t) = r(t) * R θJA

0.2
R θJA =135° C/W
0.1 0.1

0.05 0.05
P(pk)
0.02
0.02 0.01 t1
0.01 t2
Single Pulse
TJ - TA = P * R JA (t)
0.005 θ
Duty Cycle, D = t1 /t2
0.002
0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)

Figure 11. Transient Thermal Response Curve.

Thermal characterization performed using the conditions described in note 1c.
Transient thermal response will change depending on the circuit board design.

FDS6912A Rev.C