Dsa 00104955

ALSO PUBLISHED ONLINE: APRIL2008
www.highfrequencyelectronics.com
NEW SYNTHESIZED SIGNAL

GENERATOR OFFERS
LOW COST, HIGH VALUE
INSIDE THIS ISSUE:

Transmission Lines on Ion-Implanted Silicon Wafers
Spatial Combining of Microwave Noise Radiators
Tutorial—Performance Capabilities of Antenna Arrays
Technology Report—Recent Component Modeling News
New Products—Couplers, EMI/EMC, Military & Space
Online Edition
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TABLE OF CONTENTS
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ADVERTISER INDEX
Copyright © 2007 Summit Technical Media, LLC
Ideas for today’s engineers: Analog · Digital · RF · Microwave · mm-wave · Lightwave

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IF/RF MICROWAVE COMPONENTS 402 Rev H-WDD

ALSO PUBLISHED ONLINE AT: April2008
www.highfrequencyelectronics.com Vol. 7 No. 4
You can view this issue page-by-page, or click on any of

the articles or columns in the Table of Contents below
18 32 38
ldmos fm amplifier rf on cmos silicon low cost synthesizer
A 300 W Power Ampli- Characterization of RF Low Cost Meets High
fier for the 88 to 108 Transmission Lines on Value in a Synthesized
MHz FM Broadcast Band Ion-Implanted CMOS Signal Generator
Antonio Eguizabal Wafers Richard Houlihan
Kamaljeet Singh, Deepak
Banghar and Surendra Pal
44
54 technology report
tutorial Models are Key in
A Review of the Perfor- 16 Design and Manufact-
mance Capabilities of news feature uring Partnerships
Antenna Arrays High Frequency
Gary Breed Applications
46
noise array
28 Spatial Combining of
product coverage Multiple Microwave
Featured Products Noise Radiators
Jiri Polivka
72
design notes
Return Loss, Reflection
Coefficient and VSWR
Regular Columns
6 Editorial 12 In the News 63 Advertiser Index
8 Meetings & Events 58 New Products 64 Design Notes
On the Cover—This month’s cover announces the new HMC-T2000 synthesized signal generator from Hittite
Microwave. A description of this new product begins on page 38. Artwork provided by Hittite Microwave.
April 2008 5
EDITORIAL
Editorial Director
Gary Breed The 4G Battleground:
gary@highfrequencyelectronics.com
Tel: 608-437-9800
Fax: 608-437-9801 Providing Content or
Publisher
Scott Spencer
scott@highfrequencyelectronics.com
Internet Access
Tel: 603-472-8261
Fax: 603-471-0716
Associate Publisher
Tim Burkhard
tim@highfrequencyelectronics.com
Tel: 707-544-9977
Fax: 707-544-9375
Associate Editor Gary Breed

Katie Landmark Editorial Director
katie@highfrequencyelectronics.com
I
recently attended the CTIA Wireless trade show.
Tel: 608-437-9800 Featured in the center of the entry hall were pavil-
Fax: 608-437-9801
ions for different technologies, each under the ban-
Business Office ner of “The Road to 4G.” It was quite clear that the con-
High Frequency Electronics vergence of services that will become the so-called “4G”
7 Colby Court, Suite 7-436 wireless is being approached from different directions.
Bedford, NH 03110
I see two main factions hoping to get there first.
Editorial and Production Office First, most companies with cell phone origins are
High Frequency Electronics touting services as the way to utilize new broadband
104 S. Grove Street channels. These most basic of these services include subscriptions to
Mount Horeb,WI 53572 weather reports, stock quotes, news headlines, etc. “Yellow Pages” type
Also Published Online at directories tied into GPS navigation is one of the more advanced services
www.highfrequencyelectronics.com being offered. The companies following this approach are using HSDPA or
1xEV-DO broadband technologies, which are part of the “3G” family of
Subscriptions
technologies, supporting data transmission up to 3 Mbps (downlink).
Sue Ackerman
Tel: 651-292-0629 Then there is the approach from the computer side of the business,
Fax: 651-292-1517 where the future of wireless communications is seen as extending the
circulation@highfrequencyelectronics.com reach of the Internet to handheld portable devices. Their efforts are
focused on display technology, including new small-screen protocols for
Internet content that is targeted to wireless devices. These broadband
access technologies are a combination of WiFi® and WiMAX™, which offer
High Frequency Electronics (USPS 024-316) is downlink speeds from 5 Mbps up to tens of Mbps. While the “phone” part
published monthly by Summit Technical Media, of these devices may initially use existing wireless networks, some
LLC, 3 Hawk Dr., Bedford, NH 03110. Vol. 7 No. 4,
April 2008. Periodicals Postage Paid at providers anticipate converting to VoIP (Voice Over Internet Protocol).
Manchester, NH and at additional mailing There is plenty of overlap between these two approaches, so what I am
offices.
describing is more of a trend than an either/or decision. The point I want
POSTMASTER: Send address corrections to High
Frequency Electronics, PO Box 10621, Bedford,
to make is that the evolution of wireless is still underway, and that a sin-
NH 03110-0621. gle “winner” is not likely. None of the companies involved should have a
Subscriptions are free to qualified technical and business plan that depends on future domination of the marketplace!
management personnel involved in the design, I have occasionally noted that the laws of supply and demand have
manufacture and distribution of electronic
equipment and systems at high frequencies. been absent from the wireless communications arena—that companies
Copyright © 2008, Summit Technical Media, LLC
have selected services to offer based on available technology and willing
development partners, such as the providers of the content noted above.
Thus, consumers are limited to choosing from what is available, rather
than getting what they really want.
Now I think that this scenario is changing. At some point not too far
6 High Frequency Electronics

into the future, wireless will able technology, even if it means And the market includes many
achieve performance and coverage supporting what once was consid- different types of users; no single
equivalent to today’s wireline DSL ered a “competing” technology. solution will work. As the battle
and CATV-based broadband ser- As with all competition, each unfolds, interested observers like
vices. With that performance, con- technology and business model will me will watch with interest. After
sumers should be able to choose an be tested. Some will work well, all, the mix of advancing technolo-
appropriate level of service. some will fail, most will be adjusted gy, new business approaches and
The proponents of WiMAX are and adapted as the market prefer- the needs (and budgets) of cus-
quick to suggest that their technol- ences develop. tomers makes a fascinating story.
ogy is the best route, since it has
the necessary bandwidth. They
believe that a conduit into the
Internet is the best way to allow
consumers a full range of wireless
MICROWAVE
services. The limitation, however, is
that it will take a very long time for
AMPS
WiMAX to achieve coverage any-
where near what the “cell phone” TO 20 GHz
industry already has achieved.
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both approaches. I suppose that’s
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finding the best uses for the avail- w w w. t e l e d y n e - c o u g a r. c o m • e m a i l : Am p @ c o u g a rc o r p . c o m

MEETINGS & EVENTS
CONFERENCES June 15-20, 2008

2008 IEEE MTT-S International Microwave Symposium
Atlanta, GA
April 21-24, 2008 Information: Conference Web site
2008 International Conference on Microwave and http://www.ims2008.org
Millimeter Wave Technology
Nanjing, China September 10-12, 2008
Information: Conference Web site IEEE 2008 International Conference on Ultra-Wideband
http://www.icmmt2008.org Hannover, Germany
Information: Conference Web site
April 23-25, 2008 http://www.icuwb2008.org
The Czech and Slovak Microwave and
Radioelectronics Week 2008 September 30 - October 2, 2008
Olympik Hotel Prague, Czech Republic 34th RF & HYPER Europe 2008
Exhibition includes: 14th Conference on Microwave Paris-Nord Villepinte, France
Techniques (COMITE) 2008, and 18th International Information: Conference Web site
Conference RADIOELEKTRONIKA 2008 http://rfhyper.com/eng/presentation.html
Information: Exhibition Web site
http://www.radioelektronika.cz October 27-30, 2008
ISAP 2008—International Symposium on Antennas and
April 24-26, 2008 Propagation
WTS 2008—Wireless Telecommunications Symposium Taipei, Taiwan
Pomona, CA Information: Conference Web site
Information: Conference Web site http://www.isap08.org
http://www.csupomona.edu/~wtsi
April 28-30, 2008

2008 IEEE Sarnoff Symposium SHORT COURSES
Princeton, NJ
Information: Conference Web site Besser Associates
http://www.sarnoffsymposium.org 201 San Antonio Circle, Suite 115
Mountain View, CA 94040
May 19-23, 2008 Tel: 650-949-3300
IEEE International Conference on Communications Fax: 650-949-4400
(ICC 2008) E-mail: info@besserassociates.com
Beijing, China http://www.besserassociates.com
Information: Conference Web site Modern Digital Modulation Techniques
http://www.ieee-icc.org/2008 May 12-16, 2008, Burlington, MA
RF Transceiver Architecture, Design and Evaluation
May 27-30, 2008 May 12-16, 2008, Burlington, MA
ECTC 2008—Electronic Components and Technology Short Range Wireless Networks
Conference May 12-15, 2008, Burlington, MA
Lake Buena Vista, FL Advanced Wireless and Microwave Techniques
Information: Conference Web site May 12-16, 2008, Burlington, MA
http://www.ectc.net Advanced RF Power Amplifier Techniques
May 12-15, 2008, Burlington, MA
June 1-4, 2008 Applied Design of Wireless Digital Modulation Systems
2008 IEEE International Interconnect Technology May 12-14, 2008, Burlington, MA
Conference Production Testing of RF and SOC Devices
Burlingame, CA May 12-16, 2008, Burlington, MA
Information: Conference Web site Applied RF Techniques for Modern Radio Design
http://www.his.com/~iitc May 12-16, 2008, Burlington, MA
WiMAX Broadband Wireless Access
June 3-5, 2008 May 14-16, 2008, Burlington, MA
ICCE—Integration and Commercialization of Micro and Monolithic Microwave Integrated Circuit Design
Nanosystems International Conference & Exhibition May 14-16, 2008, Burlington, MA
Hong Kong, China EMC Design, Bench Top Measurements and
Information: Conference Web site Troubleshooting Techniques—A Practical Approach
http://www.asmeconferences.org/MicroNano08 May 14-16, 2008, Burlington, MA

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MEETINGS & EVENTS
Computer Simulation Technology June 11-13, Boston, MA

http://www.cst.com/Content/Events/Workshops.aspx Sept. 17-19, Syracuse, NY
CST announces a series of customer centric work- Nov. 12-14, Philadelphia, PA
shops focusing on high frequency system design chal- RF and Microwave Receiver Design
lenges. The series investigates how new technology April 14-17, Baltimore, MD
will benefit designers working in the high speed data, June 16-19, Boston, MA
power integrity and EMC/EMI areas, as well as on Sept. 22-25, Syracuse, NY
optical applications. CST now offers advanced work- Nov. 17-20, Philadelphia, PA
flows to cover all major aspects of electromagnetic sys- RF Power Amplifiers, Classes A-S: How the Circuits
tem design and optimization and this new technology Operate, How to Design Them, and When to Use Each
will be explained through a series of CST and partner April 29-30, Baltimore, MD
customer presentations. Presenting partners include, June 23-24, Boston, MA
GM, Verigy, Cisco, Agilent, Finisar and Continental Sept. 15-16, Syracuse, NY
Automotive. Nov. 24-25, Philadelphia, PA
Design Challenges: RF/SI & EMC Simulation
May 20, 2008, Santa Rosa, CA
Design Challenges: SI-PI and EMC Simulation
May 21, 2008, Santa Clara, CA CALLS FOR PAPERS
Design Challenges: Optical Simulations with CST MWS
June 3, 2008, University of Twente Enschede, The
Netherlands 2008 IEEE Compound Semiconductor IC Symposium
Design Challenges: EMC and SI-PI Simulation Monterey, CA
August 18, 2008, Detroit, MI Conference Dates: October 12-15, 2008
Abstract Deadline: May 12, 2008
Topics:
Northeast Consortium for Engineering Education Innovative RFIC device & circuit concepts; millime-
68 Port Royal Square ter-wave/high-speed CMOS IC; circuit design & fabri-
Port Royal, VA 22535-0068 cation; manufacturing technology & cost issues;
Tel: 804-742-5611; Fax: 804-742-5030 CAD/CAM/CAT tools & techniques; IC testing &
E-mail: ed-pub@crosslink.com methodology; packaging technology; reliability;
http://www.antennacourse.com advanced device applications; system applications
ANTENNAS: Principles, Design, and Measurements (e.g., wireless, broadband, military); and optoelectron-
May 12-15, 2008 Annapolis, MD ic and OEIC applications.
Information:
Authors must submit an abstract of results not previ-
University of Wisconsin—Madison ously published or not already accepted by another
Department of Engineering conference. Abstracts must be submitted electronical-
Professional Development ly using the www.csics.org Web page. The only accept-
432 N. Lake St. ed file format is PDF. See the Web site for full sub-
Madison, WI 53706 mission information.
Tel: 800-462-0876
Fax: 608-263-3160
E-mail: danbeck@engr.wisc.edu 58th Annual IEEE Broadcast Symposium
http://epd.engr.wisc.edu Alexandria, VA
Understanding and Troubleshooting VoIP Networks Conference Dates: October 15-17, 2008
April 28-29, 2008, Madison, WI Abstract Deadline: May 23, 2008
Understanding and Troubleshooting Videoconferencing Topics:
Networks Topics sought include technical issues associated with
May 1-2, 2008, Madison, WI the termination of analog television broadcasting;
Introduction to Data Communications repurposing of analog television broadcast transmit-
June 10-12, 2008, Madison, WI ters; digital radio and television systems; streaming,
IPTV, VoIP, VoD, mobile TV, wireless multimedia;
wireless broadband networks; and transmission, prop-
R.A. Wood Associates agation, reception, and re-distribution of broadcast
1001 Broad St., Suite 450 signals.
Utica, NY 13501 Information:
Tel: 315-735-4217 Abstracts must be no more than 500 words and sub-
http://www.rawood.com mitted via email to: bts@ieee.org. Include author’s
Introductory RF and Microwaves name and contact information. For details visit the
April 9-11, 2008, Baltimore, MD symposium Web site: www.ieee.org/bts/symposium.

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IN THE NEWS
Business News
TRAK Microwave, a Smiths Interconnect business, and The WiMAX Forum announced it projects more than
University of South Florida, College of Electrical 133 million WiMAX users globally by 2012. The forecast
Engineering, have jointly won a full matching grant is based on the results of an independently commissioned
from the Florida High Technology Corridor program research study to be published in April 2008. Additional
(http://www.floridahightech.com). The grant sponsors data from the study estimates that approximately 70 per-
research programs aimed at “Measuring and Modeling of cent of the forecasted WiMAX users by 2012 will utilize
Phase Noise Conversion In Amplifiers and Frequency mobile and portable WiMAX devices to access broadband
Multipliers.” Internet services.
ANSYS, Inc., a global innovator of simulation software KOR Electronics announced it has purchased the
and technologies designed to optimize product develop- Government Solutions subsidiary Paragon Dynamics,
ment processes, and Ansoft Corporation, a global Inc. (PDI) from Zanett, Inc. for cash. Pagemill Partners
provider of Electronic Design Automation (EDA) soft- served as exclusive financial advisor to KOR Electronics.
ware, announced today that they signed a definitive
agreement whereby ANSYS will acquire Ansoft for a pur- Eubus GMBH, Munich and GIGACOMP signed a dis-
chase price of approximately $832 million in a mix of cash tributor agreement for Central Europe. GIGACOMP
and ANSYS common stock. When completed, ANSYS cur- GmbH is responsible for support and distribution of the
rently anticipates that the transaction will be modestly Eubus products in Germany and Austria and GIGA-
accretive to non-GAAP earnings per share in its first full COMP AG for Switzerland. Eubus develops and produces
year of combined operations. RF components like reactive power divider/combiner,
switches and programmable attenuators as well as RF
TriQuint Semiconductor® and WJ Communications, systems like network attenuator modules (NAMs) and
Inc. announced a definitive agreement for TriQuint to hand-over & cuppling units (HCU).
acquire WJ. Under the terms of the agreement, TriQuint
will acquire by merger all outstanding shares of WJ for Ethertronics Inc. announced the company has shipped
$1.00 per share, implying a purchase price of approxi- more than 100 million of its Isolated Magnetic Dipole™
mately $72 million. (IMD) antennas.
nGimat has received a Small Business Innovation Quik-Pak, a division of Delphon Industries, announced
Research (SBIR) Phase II award from the US Navy to that it has met the strict requirements for ISO compli-
prototype a low cost, miniaturized tunable filter for use in ance and has been awarded ISO 9001:2000 certification
X-band active electronically steered antenna (AESA) for its IC packaging, assembly and prototyping services.
array based radar systems. This is a two-year contract TouchMark, another division of Delphon Industries,
with a funding of $750,000. announced that it has met the strict requirements for ISO
compliance and has been awarded ISO 9001:2000 certifi-
Orolia, a precision electronics technology group special- cation for its precision pad printing services.
ized in high-precision time and frequency generation and
distribution, announced the acquisition of Pendulum Hittite Microwave Corporation announced the launch
Instruments. This acquisition extends the technical of its newly redesigned website at www.hittite.com. Many
competencies and market reach of Orolia to a third area new features have been added including: new page
of expertise: the measurement of high-precision time and designs, a dynamic homepage, individual product splash
frequency signals. This acquisition also allows the Group pages, plus new e-comm and sample request systems.
to expand its geographical presence in the fast-growing
economies of Eastern Europe, Russia, and China. Elcom Technologies, Inc. announced the receipt of a
new contract for $1 Million from a major United States
MIPS Technologies, Inc. announced that Altair aerospace / defense military contractor, for a high perfor-
Semiconductor has integrated MIPS® processor and mance VME based synthesized RF source and synthe-
analog IP in its new ALT2150 mobile WiMAX baseband sized broadband downconverter. Elcom was initially
processor. The ALT2150 is the first baseband processor selected due to its ability to integrate synthesizer and
optimized for handheld devices, combining ultra-low tuner in a VME package. This recurring contract will
power consumption, low cost and the smallest footprint. require support through 2009.
Agilent Technologies Inc. announced that Finisar, a A subsidiary of Isola, Polyclad Laminates Inc, recently
leader in fiber optic solutions for high-speed networks, completed license agreements with Suzhou Fukuda
has selected Agilent’s Advanced Design System (ADS) Metal Co. Ltd (PRC) and Lee Chang Yung
software to support the development of their optics prod- Technology Corp. (ROC) for Isola’s patented Drum Side
ucts designed for the telecom market. Agilent’s ADS soft- Treated Foil (DSTF®) technology. DSTF is an enabling
ware platform includes the Signal Integrity Design Suite technology for dense circuit formation and high-speed sig-
and the Ptolemy system simulator. nal transmission.

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IN THE NEWS
Flex Interconnect Technologies (FIT), a leader in Kyocera Corporation of Kyoto, Japan, has transferred to
design, manufacture and assembly of flexible printed cir- Kyocera America, Inc. and assumed new responsibilities
cuits, announced that its Quality Management System is as Vice President, Asia Ceramic Products Sales. In his
certified to AS9100 revision B standards. The AS9100 new role, Aonuma will be responsible for North American
revision B is a standard developed by International sales of ceramic-based semiconductor package products
Aerospace Quality Group (IAQC). made by Kyocera business units in Asia. Aonuma joined
Kyocera in 1979 and has held sales management posi-
tions both in Japan and the United States, including 10
People in the News years of prior service with Kyocera America, Inc.
Wenjing Lou, assistant professor of electrical and com-
puter engineering at Worcester Polytechnic Institute AR RF/Microwave Instrumentation has expanded its
(WPI) has received a five-year, $450,000 CAREER Award staff of Microwave Design Specialists
from the National Science Foundation. Lou’s research with the addition of Bud Osthaus, who
focuses on wireless networks and their security. The brings 30 years of microelectronics
CAREER Award will enable her to conduct a comprehen- experience to the company. Mr. Osthaus
sive study of a relatively new concept in wireless net- began his career as a designer with
working, one that takes better advantage of the broadcast Microcom Corp. and later worked in pro-
nature of wireless communications. The aim of the cess engineering for a variety of technol-
research is to find ways to increase the efficiency, ogy companies. Prior to joining AR, he
throughput, and reliability of wireless networks and to was with Merrimac Industries, where
develop computer models and protocols that will enable he established a full-service microelectronic prototype
designers to create more effective wireless technology. facility.
Nordic Semiconductor ASA announces that J. NDK announced the addition of frequency control guru
Darren O’Donnell has been appointed Craig Taylor to strengthen their new
as Director of Sales, Americas. While business and application development
Nordic has operated a local San Jose, efforts. Craig will bring over 20 years of
CA-based operation for over a year, this successful technical and marketing
is the first director-level appointment experience to aid NDK’s customers. He
specifically for the Americas. O’Donnell will be working directly with OEMs on
will lead Nordic’s existing sales and their next generation products. By
field applications engineers together nature quartz based frequency control
with the company’s two US-based dis- components carry one of the longest
tributors, Symmetry Electronics, and Nu Horizons; and lead times to develop. By utilizing his depth of engineer-
technical sales engineering representative SC Cubed. ing experience, including time in the lab, Craig will work
O’Donnell has over two decades experience in the US and with customers to gain an understanding of their indus-
global electronics industry. Previous roles include senior try’s future requirements.
positions in manufacturing and distribution companies.
SRCTec, Inc. announces the promotion of David
Two Northrop Grumman Corporation employees, Bessey to Vice President, Business Development. In this
Clayton K.S. Kau and Aaron K. Oki, received awards new role, Bessey is responsible for managing and provid-
for their contributions in science, engineering, and their ing technical leadership for all business development
communities at the 2008 Asian American Engineer of the opportunities at SRCTec, which include radar, electronic
Year (AAEOY) awards. Kau is the vice president and gen- warfare, and integrated logistics services. He is also
eral manager of Space and Defense Products Division, responsible for new product and market development and
and Oki is a technical fellow and deputy director of micro- will continue to direct all proposal efforts. Bessey has
electronics. Both work at the company’s Space Technology served as SRCTec’s Business Development Director since
sector. its inception in 2006. SRCTec, Inc. also announces the
promotion of Drew James to Vice President, Operations.
Kyocera America, Inc. announced two executive-level In this new role, James will be responsible for managing
promotions effective April 1, 2008. Gary Lee has been all aspects of SRCTec’s Operations, including the
promoted to Vice President, Organic Product Sales. Lee Program Management, Manufacturing, Quality
will be responsible for expanding Kyocera’s North Assurance, and Integrated Logistics Support organiza-
American business in semiconductor package products tions. James has more than 20 years experience manag-
based on organic and plastic material technologies. He ing the development and production of complex tactical
joined Kyocera in January 2000 and has more than 25 systems and sensors for the U.S. Department of Defense.
years of experience in microelectronics, including man-
agement positions in sales and manufacturing. Kenji Send business and technology news releases to:
Aonuma, previously General Manager, International editor@highfrequencyelectronics.com
Sales Division, Semiconductor Components Group, at

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Antenna Modeling System Includes Scripting Feature to Design Complex Antenna Systems
Agilent Technologies Inc. (www.agilent.com) has announced the
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Analog Noise-Suppression Technology Requires One-Tenth the Power of DSP Solutions

A new microphone array amplifier from National Semicon-
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delivers more natural-sounding voice quality. Incorporating far-
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High Frequency Design
LDMOS FM AMPLIFIER
A 300 W Power Amplifier

for the 88 to 108 MHz
FM Broadcast Band
By Antonio Eguizabal
Freescale Semiconductor
T
he intention of this
This article describes an FM article is to present
band power amplifier, a 300 watt single-
including circuit design, ended RF power amplifi-
thermal considerations, er for the FM broadcast
construction notes and per- band, used in small to
formance measurements medium radio stations in
which economy and flexi-
bility are important to the user.
With the recent availability of low cost
overmolded plastic LDMOS RF power amplifi-
er transistors, such as the Freescale family of
MRF6VXXXXN devices, it is possible to design Figure 1 · Assembled test fixture (top view).
and build a low cost, compact, broadband
power amplifier offering simplicity and relia-
bility. area and ERP has a minimum field strength
In this article, an RF power amplifier using of 70 dBµV or 3.16 mV/m [2].
the low cost OMP Freescale MRF6V2300N
LDMOS transistor is presented (photo in Introduction
Figure 1). It operates at Vdd = 50 VDC with an The Freescale MRF6V2300N is a 10 to 450
average drain efficiency in excess of 60% and MHz 300 W LDMOS RF transistor in a TO-
a gain of 24 dB with a 1 dB gain flatness over 272 WB plastic package featuring 25.5 dB
the 88 MHz to 108 MHz band. No tuning is gain and 68% efficiency at 220 MHz, operating
required as the amplifier is broadband. This in Class AB2 with a 50 VDC Vdd power supply
makes it very attractive for FCC Class A sta- and Idq of 900 mA [3].
tions [1] with a HAAT such that the coverage It is capable of handling 10:1 VSWR oper-
Acronyms and Abbreviations
Class A Station: As defined by the FCC, mini- US telecommunications regulatory agency.
mum ERP of 100 W FM: Frequency Modulation
Class AB2: Operation of a power amplifier that is HAAT: Height Above Average Terrain
DC biased between Class A and B, which requires IRL: Input Return Loss
input power and the conduction angle is between LDMOS: Lateral Diffused Metal Oxide
π and 2π radians. Semiconductor
ACPR: Adjacent Channel Power Ratio OFDM: Orthogonal Frequency Division Multiplex
CW: Continuous Wave, i.e. no modulation OMP: Over Molded Plastic, i.e., epoxy package
dBµV: Decibels referred to 1 µV/m PC: Printed circuit
ERP: Effective Radiated Power P1dB: RF power level at 1 dB gain compression
FCC: Federal Communications Commission, the VSWR: Voltage Standing Wave Ratio

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LDMOS FM AMPLIFIER
Figure 2 · Impedance measurements, Zsource at f0. Figure 3 · Impedance measurements, Zload at f0.
ating at 220 MHz with Vdd = 50 VDC and 300 W. Integral is used since the input impedance of the device is low, as
ESD protection on the gate circuit makes it safe to handle shown on the Smith chart in Figure 2. The input section
in the lab or production floor. Because the device is not is an 80 mil wide microstrip.
internally matched, external matching components are Also, a five-section output matching network is used to
required to bring the input and output impedance level to increase the device output impedance up to the 50-ohm
the standard value of 50 ohms at the RF connectors. load. Due to the high RF currents involved, a 170 mil wide
Operation in the 88 MHz to 108 MHz band requires microstrip is favored to reduce losses.
broadband matching both at the input and output. This is In both cases, the microstrip is bent around in a mean-
usually accomplished with a combination of lumped ele- dering shape to fit into the available PC board space. The
ments (L and C) and lengths of microstrip transmission layout is a compromise between the number of impedance
line. The result is a compact design in a standard PC discontinuities, associated losses and fit.
board material. The output impedance is also low, as given in the
Smith chart in Figure 3. Please note that these are test
Design Objectives fixture impedances defined as Zsource and Zload in the data
The following is a partial list of desired features: sheet [3] and measured with probes and a calibrated net-
work analyzer.
1. Power amplifier device: MRF6V2300N LDMOS RF After tuning, both networks were implemented in a
OMP transistor printed circuit board using Arlon® CuClad 250 GX-0300
2. Single ended design material [4] with an εr = 2.55, a nominal dielectric thick-
3. DC supply 50 VDC ness of 30 mil and 2.8 mil thick copper trace.
4. Class AB2 operation, Idq = 900 mA Figure 4 gives the PC board and assembly diagram for
5. P1dB = 300 W across the band the finished RF power amplifier.
6. Gain ≈ 24 dB; IRL ≤ –10 dB across the band
7. Efficiency ≈60% across the band A Note on the Thermal Design
8. 50 Ω input and output impedances at the test fixture At a predicted drain efficiency of 68%, that is 32% of
RF connectors the input DC power is dissipated in heat. Thus using the
9. Must fit into a standard Freescale 4” × 6” test fixture equations Pdc = Pout/ηd, where ηd is the drain efficiency
PC board space and Pdiss = (1 – ηd) · Pdc, the values are 3 Pdc = 441.18 W
10. Must be compatible with standard hardware, heat and Pdiss = 141.18 W. These are somewhat optimistic as
sink, Cu heat spreader, mounting plates and N type the ηd used is for narrow band 220 MHz design to provide
RF connectors. an estimate. A slight loss in efficiency is expected for
broadband operation.
Design Considerations The thermal and heat sink must be carefully consid-
In order to achieve the desired broadband perfor- ered so that the case temperature Tc < 200°C and the
mance over 88 to 108 MHz, a five-section input network junction temperature Tj < 200°C, otherwise the reliability

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LDMOS FM AMPLIFIER
trical contact impedance, a small

piece of TGON-805® material [7] of
equal footprint to the RF transistor is
placed under the device before bolt
mounting [8] to the copper heat
spreader.
Results
The final fully assembled test fix-
ture is shown in Figure 1. Note input
gate bias decoupling circuit and out-
put drain decoupling network. These
assure stable amplifier operation and
prevent RF fields from reaching the
gate area. The copper heat spreader
and LDMOS power transistor is visi-
ble in the center.
Figures 5 and 5 show the gain,
IRL, drain current and efficiency
Figure 4 · PC board layout and assembly diagram. under a power sweep at low, mid and
high frequency channels. Figures 7
and 7 are graphs giving the gain,
in terms of MTTF will be affected [5]. heat sink by Cool Innovations® [6] IRL, drain current and efficiency
In this design, the MRF6V2300N through a copper plate heat spreader. under a frequency sweep at two
device is thermally coupled to the In order to minimize the source con- power levels: 150 W and 300 W.
aluminum pin-fin type UltraCool III tact thermal impedance and the elec- Intermodulation performance is
Figure 5 · Power sweep, gain and IRL at 88 MHz, 98 MHz Figure 6 · Power sweep, drain current and efficiency
and 108 MHz. at 88 MHz, 98 MHz and 108 MHz.
Figure 7 · Frequency sweep, gain and IRL at Pout = 150 Figure 8 · Frequency sweep, drain current and effi-
W and 300 W. ciency at Pout = 150 W and 300 W.

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High_Frequency_03_08.indd 1 17.03.2008 15:34:12

LDMOS FM AMPLIFIER
Figure 9 · Inter-modulation distortion 3rd order (two Figure 10 · OFDM digital modulation [8K mode, 64
tone test). QAM, 5 symbols].
shown in Figure 9. Digital modulation performance with modulation test, showing reasonably good performance
7 dB back-off under DVB-T OFDM with 64 QAM and five over the band (low, mid and high channels) and at a power
symbols is given in Figure 10. level exceeding 300 W.
Table 1 summarizes the results obtained from a CW Table 3 summarizes the data from an OFDM digital
test conducted in a lab environment with a 50-ohm load modulation signal (8K mode DVBT, 64 QAM data carrier
at low, mid and high channels. At full output power this modulation, 5 symbols) simulating the digital FM band
design exhibits 24 dB gain, a drain efficiency better than broadcast signal for future applications. The ACPR is
61% with a fairly good IRL over the band. Gain compres- measured at 4 MHz offset from the center frequency.
sion is kept close to 1 dB or better. As in most single- Power level is at 7 dB back-off.
ended designs, the harmonic level is elevated and further The total parts cost (in quantity) is less than US$480,
steps can be taken with an external passive LC low pass as detailed in Table 4.
filter to reduce their level even more, in particular the
2nd harmonic and keeping in mind the insertion loss of References
the filter. Figure 11 is a spectrum plot of harmonics while 1. US CFR 47 part 73, §73.211 “Power and antenna
operating at 88 MHz. height requirements,” FCC regulations, available from
Table 2 summarizes the data from the two tone inter- www.fcc.gov.
2. US CFR 47 part 73, §73.315 “FM transmitter loca-
tion,” FCC regulations, available from www.fcc.gov.
3. MRF6V2300N Data Sheet, available from
Table 1. 300W performance data and harmonic levels.
Table 2 · Two-tone IMD test, 155W per tone.
Figure 11 · Harmonics at 88 MHz. Table 3 · OFDM test at 7 dB backoff.

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LDMOS FM AMPLIFIER
www.freescale.com/rf Attach Method for High Power RF Devices in Plastic

4. Arlon Microwave Materials Div., www.arlon-med.com Packages,” and AN3263, “Bolt Down Mounting Method for
5. A Freescale MTTF calculator is available at High Power RF Transistors and RFICs in Over-Molded
http://www.freescale.com/rf; select options for Tools/ Plastic Packages,” both available at www.freescale.com/rf.
Software/Application Software/Calculators to access the
MTTF calculator. Author Information
6. Model 3-505019RX is available from www.coolinno- Antonio Eguizabal is an Applications Engineer in the
vations.com RF Power Products, RF Division of Freescale
7. Thermagon Inc. is now Laird Technologies: Semiconductor in Tempe AZ. He can be reached by e-mail
www.lairdtech.com. at: a.eguizabal@freescale.com. Data for the MRF6V2300N
8. Freescale Application Notes AN1907, “Solder Reflow can be found at: www.freescale.com.
88-108 MHz REV3

Designator Description Part Number Manufacturer Price Each Price Total
B1, B3 95 ohm, 100 MHz Long

Ferrite Bead SMT 2743021447 Fair-Rite $0.13 $0.26
B2 47 ohm, 100 MHz Short
Ferrite Bead SMT 2743019447 Fair-Rite $0.11 $0.11
C1, C15, C24 1000 pF Chip Capacitor ATC100B102JT50X ATC $1.00 $3.00
C2 30 pF Chip Capacitor ATC100B300JT500X ATC $1.00 $1.00
C3, C9 33 pF Chip Capacitor ATC100B330JT500X ATC $1.00 $2.00
C4 15 pF Chip Capacitor 180R150JW 500X ATC $1.00 $1.00
C6 82 pF Chip Capacitor ATC100B820JT 500X ATC $1.00 $1.00
C7 75 pF Chip Capacitor ATC100B750JT 500X ATC $1.00 $1.00
C8 51 pF Chip Capacitor ATC100B510GT500X ATC $1.00 $2.00
C10 4.7 pF Chip Capacitor ATC100B4R7CT500X ATC $1.00 $2.00
C12, C13 510 pF Chip Capacitor ATC100B511JT100X ATC $1.00 $2.00
C16, C17, C18
C19, C26 2.2 µF Chip Capacitor C1825C225J5RAC Kemet $3.16 $15.80
C20, C29 10K pF Chip Capacitor ATC200B103KT50X ATC $1.50 $3.00
C21, C28 20K pF Chip Capacitor ATC200B203KT50X ATC $1.50 $3.00
C22, C25, C27 0.1 µF Chip Capacitor CDR33BX104AKWS AVX $0.70 $2.10
C23 330 µF, 63V Electrolytic MCRH63V337M13X21-
Capacitor RH Multicomp $0.34 $0.34
C30 10 µF, 35V Tantalum
Capacitor T491D106K035AS Kemet $0.32 $0.32
C31 22 µF, 35V Tantalum
Capacitor T491X226K035AS Kemet $0.91 $0.91
C32 47 µF, 50V Electrolytic
Capacitor 476KXM050M Illinois Cap $0.07 $0.07
L1 8 nH Inductor A03T CoilCraft $0.15 $0.15
L2 82 nH Inductor 1812SMS-82NJ CoilCraft $0.15 $0.15
L3 5 Turn #18AWG Inductor,
ID = 0.185" Handwound Freescale $1.00 $1.00
L4 3 Turn #18AWG Inductor,
ID = 0.090" Handwound Freescale $1.00 $1.00
R1, R2 18-ohm 2010 Chip Resistor CRCW201018RFKEA Vishay $0.12 $0.24
Q1 LDMOS RF Power Transistor MRF6V2300N Freescale $45.00 $45.00
Hardware Printed Circuit Board DS2313 DS Electronics $66.00 $66.00
Hardware Endplates Machine shop Freescale $22.00 $44.00
Hardware Copper insert Machine shop Freescale $78.00 $78.00
Hardware Heatsink UltraCool III Cool Innovation $177.00 $177.00
Hardware RF N type female connectors 3052-1648-10 Amphenol/Tyco $10.00 $20.00
Total $476.45
Table 4 · Part list and cost breakdown for the MRF6V2300N FM band power amplifier.

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RF ON CMOS SILICON
Characterization of RF
Transmission Lines on
Ion-Implanted CMOS Wafers
By Kamaljeet Singh, Surendra Pal, ISRO Satellite Center
and Deepak Bhanager, University of Rajasthan
I
n spite of rapid tech- high-resistivity wafers using ion-implantation
This article reports on nology evolution for with a low energy dose. The process reported
experiments with transmis- the use of silicon in in the literature utilizes proton and arsenic
sion lines on silicon that has RF applications, the main implantation at an energy dose in MeV range
been modified to improve technology challenge to [3-6].
its dielectric properties realize high RF perfor- In this article, the novel concept of poly-sil-
mance in silicon to over- icon deposition over oxide has been imple-
come the high substrate losses and cross-talk mented. This technique, along with controlled
associated with the CMOS grade silicon. dose of implantation, gives high resistivity at
Further, technology advancement demands low energy levels (KeV range). The proton
on-chip integration of transformers, baluns, implantation has little effect on oxide integri-
filters, and the co-integration of digital and RF ty that can be integrated into VLSI back-end
systems on a single silicon chip. But this is processes. Further, 50 ohm transmission lines
hampered due to low-resistivity of CMOS have been fabricated both on an ion-implant-
grade Si (typically 3-5 Ω-cm) wafer, resulting ed silicon wafer and standard alumina sub-
in substantial energy losses and dielectric strate. The performance of the ion-implanted
attenuation. [1] wafer has shown to be at par with the stan-
One of the most common solutions is to uti- dard substrate, thus paving the way for RF-
lize VLSI back-end dielectric layers on top of CMOS integration.
Si wafer to reduce lossy effects. However, large
losses from Si substrate are still unavoidable Resistivity Effects on Transmission Lines
because of limited oxide thickness provided by Transmission lines are of great importance
current VLSI technology. The stack of oxide- in any RF design and their performance rep-
nitride-oxide has been reported by Ng et al [2] resents one of the key issues in RF-CMOS
as having good linearity, absence of dispersion integration, especially for higher operating
behavior and low leakage. Still, this technique frequencies. Two types of modes generally
has the limitation of an interfacial layer propagate on silicon substrate, known as slow
thickness constraint and cannot be used at wave and quasi-TEM mode, corresponding to
higher frequencies. Other options employed lossy silicon substrate and lossless (dielectric)
are the thicker polyimide or selective removal silicon substrate. The substrate losses depend
of the underlying substrate, but this increases on frequency and surface resistivity [7]. At
complexity due to process intensive steps, higher frequencies, the dielectric behavior of
along with the risk of contamination of the the silicon substrate cannot be neglected at
foundry machinery. Even the use of SOI (sili- frequencies approaching or exceeding the
con-on-insulator) shows little improvement in dielectric relaxation (cut-off) frequency fc
substrate losses and cross-talk because thick- defined as
er isolation is required for RF performance
improvement. This article details a simple
CMOS grade compatible process to develop

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RF ON CMOS SILICON
Rs Ls
Csi Gsi
Figure 1 · Transmission line. (a) Lumped physical model; (b) Cross-section Figure 2 · Fabricated transmission
view of line on the silicon wafer. line on ion-implanted wafer
in Figure 1.
The substrate losses represented
by Gsi and metallization losses can be
represented as Rsi as shown above.
For low and medium resistivity (ρ <
60 ohm-cm), the losses are mainly
due to shunt conductance, Gsi. At
high resistivity, substrate behaves
purely as capacitive and contribution
(a) (b)
of Gsi is negligible so it exhibits low-
est losses.
Figure 3 · Measured output performance with sinusoidal wave. (a) 1 MHz;
(b) 16 MHz. Concept of Ion Implantation
The concept of high resistivity is
shown as a cross section view in
where Rsi and Csi are the resistance ly. This relation shows the effect of Figure 1(b). This technique makes a
and capacitance of the substrate and resistivity on the cut off frequency. high resistivity wafer compatible
ρsi and εsi are the resistivity and per- The equivalent lumped physical with the CMOS process. The oxide is
mittivity of the substrate respective- model can be represented as shown deposited on the silicon wafer to
increase substrate isolation over
which ion implantation of poly-silicon
Personal ProbePoint™ CPW-µStrip has been carried out. This technique
has been used for RF applications
Probe Adapter Substrates and in authors view still not reported
Adapt
Station
Probe Tip
er S
ubst
rates elsewhere. The resistivity of heavily
FET
doped poly-Si is about ten times high-
Very Low Cost er than that of diffusion doped poly-
High Function
Si [Ref. 9, pp. 181-182]. A subsequent
A compact full featured, modestly priced, manually operated probe annealing step redistributes and acti-
station developed for engineers and scientists.
Measure Microwave, RF and DC parameters of Semiconductor Devices, vates the implanted dopant.
Packages and Assemblies with NIST traceability .
•Precision CPW to µStrip Adapter Substrates•
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The Experiment
•6.5X-112.5X Stereo Zoom Microscope • Adjustable Halogen Illuminator • •Accurate Electrical Data to Frequencies >50 GHz• A standard 6-in Si wafer of 675
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•Test wafers, microstrip packages and surface mount components•
J microTechnology J microTechnology dation of 250 Å followed by poly depo-
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3744 NW Bluegrass Pl
Portland, OR 97229
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implantation of the proton (dose of
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Test Tooling for the Untestable 8.0e15 cm–3) at 75 KeV has been car-
A Probe Station On Every Bench ried out. The wafer is then annealed

at 1000°C to redistribute the implanted dopants. The Failure Is Not
An Option.
metallization of aluminum is carried out using E-beam
and patterned using lift-off to have transmission line of
dimension 0.5 × 2.7 mm. Backside metallization is carried
out as required for microstrip configuration. The complete
topology is shown in Figure 2. Standard MIC fabrication
of 50-ohm line is also carried out on alumina (25 mils)
substrate having width of 0.25 mm. The measurement of KMW1031
resistivity is carried out using I-V measurement. The AC 20 - 30 Watts,
30 - 512 MHz
characterization has been carried out using function gen-
erator (Tektronix, AFG 310) and output is measured
using oscilloscope (Tektronix, T5540D).
The structure is mounted in the standard COB pack-
KMW1030HP
age with leads thermo-bonded to the output terminals. 20 Watts Manpack,
Multiple leads have been bonded to minimize intercon- 40 Watts Vehicle Mounted,
30 - 512 MHz
nection inductance.
Results and Discussions AR amplifier modules and systems have

The resistivity of proton-implanted Si comes out been on the front lines, in the toughest battle
conditions. They’re not only tough and KMW1040
around 24 kΩ which is much higher than the standard 50 Watts CW,
CMOS grade silicon wafer value of ~300Ω. The perfor- dependable, they’re lightweight, versatile, 30 - 512 MHz
mance of the transmission line on ion-implanted Si wafer and easy to use. And they’re ready for
has been compared with the transmission line fabricated anything. Always.
on the standard alumina substrate. Both sinusoidal as
well as square wave has been given at different frequen- • Booster amplifiers for tactical military
cies ranging from 1 MHz to 16 MHz. Figure 3 shows the radios from 30 – 512 MHz (VHF and
measured performance of the standard alumina substrate UHF bands) – from 12 to 200 watts
KMW2030
at two different frequencies. The output voltage comes out • High-Efficiency Modules for Jamming 125 Watts CW,
in the range of 50 mV. It has been observed that square applications / Electronic Warfare / ECM / 30 - 512 MHz
wave got distorted after 8 MHz due to the inherent prop- ECCM / Improvised Explosive Devices
erty of the dielectric (Figure 4). • Man-Pack / Vehicle-Mount KMW2050
The same experiment has been carried out using ion- • Self-Tuning / Multi-Band 200 Watts CW,
implanted wafer (Figures 5 and 6). The output voltage 225 - 400 MHz
• Ultra-Compact
comes out around in the range of 100 mV and same phe- • Exceed MIL-STD 810F
nomena have been observed with the square wave. • Compatible with virtually every
This result shows good agreement with the standard military transceiver
alumina dielectric, indicating the high resistivity achieved • Backed by the strongest, most
in the Si process. The high resistivity after ion-implanta-
comprehensive warranty in the
tion may be due to implantation-created high defect densi-
industry and a global support KMW1092
ties that effectively trap free carriers. The trend of the out-
put voltage variation also shows creation of high resistiv-
network that’s second to none 5 - 10 Watts CW,
25 - 1000 MHz
ity on the wafer. When failure is not an option, AR amps are
Conclusion
your only choice.
Simple ion-implantation methodology has been For more information, call us at 425-485-9000
demonstrated for RF circuits applications using a stan- KMW1095
or visit us at www.ar-worldwide.com. 30 Watts CW,
dard CMOS foundry process. The comparison with the 10 - 1000 MHz
standard alumina substrate has also been made. The
results show the effectiveness of the desired process
topology for changing the resistivity. The process enables
easier integration into current technology paving way for
RF-CMOS to become a reality on a single chip. It is hoped
that this development will lead to practical high integrity modular rf
Other ar divisions: rf/microwave instrumentation • receiver systems • ar europe
and low cost topologies. Copyright© 2008 AR. The orange stripe on AR products is Reg. U.S. Pat. & TM. Off.

RF ON CMOS SILICON
(a) (b)
Figure 4 · Measured output performance on alumina substrate with Figure 7 · Comparison of the output
square wave. (a) 1 MHz; (b) 16 MHz. voltage with frequency.
Microwave and Wireless Components

Letters, Vol. 12, No. 11, pp. 429-431,
Nov. 2002.
6. K.T. Chan, Albert Chin et al.,
“Low RF noise and power loss for Ion-
implanted Si having an improved
Implantation process,” IEEE Electron
Device Letters, Vol. 24, No. 1, pp. 28-
(a) (b)
30, Jan. 2003.
Figure 5 · Measured output performance on ion-implanted wafer with 7. Yong-Zhong Xiong et al.,
sinusoidal wave. (a) 1 MHz; (b) 16 MHz. “Substrate effects on Resonant
Frequency of Silicon-Based RF on-
chip MIM capacitor,” IEEE
Transactions on Electrons Devices,
Vol. 53, No. 11, pp. 2839-2845, Nov.
2006
8. G. Cellere, M.G. Valentini et al.,
“Different Nature of Process -Induced
and stress-induced defects on thin
SiO2 Layers,” IEEE Electron Device
Letters, Vol. 24, No. 6, pp. 393-395,
(a) (b)
June 2003.
Figure 6 · Measured output performance on ion-implanted wafer with 9. Stanley Wolf and Richard N.
square wave. (a) 1 MHz; (b) 16 MHz. Tauber, Silicon Processing for The
VLSI Era. Lattice Press, Sunset
Beach, California, 1986.
References 3. R. Yuang Yang, Cheng-Yuan
1. Claus Schollhorn,Weimei Zhao Hung, et al., “Loss characteristics of Author Information
et al, “Attenuation Mechanism of alu- silicon substrate with different resis- Kamaljeet Singh is a researcher
minum millimeter-wave coplanar tivities,” Microwave and Optical and and Surendra Pal is scientist and
waveguides on silicon,” IEEE Trans. Technology Letters, Vol. 48, No. 9, pp. deputy director at the ISRO Satellite
On Electron Devices, Vol. 50., No. 3, 1773-1776, Sept. 2006. Center in Bangalore, India. They can
pp 740-746, March 2003. 4. Y.H. Wu, Albert Chin et al., be reached by e-mail at kamaljs@
2. C.H. Ng, K.W. Chew, and S.F. “Fabrication of Very High Resistivity sclchd.co.in, and pal_surendra@
Chu, “Characterization and compari- Si with Low-loss and Cross-talk,” hotmail.com, respectively.
son of PECVD silicon nitride and sil- IEEE Electron Device Letters, Vol. 21, Deepak Bhatnagar is affiliated
icon Oxynitride dielectric for MIM No. 9, pp. 394-396, Sept. 2000. with Microwave Lab, Department of
capacitors,” IEEE Electron Device 5. K.T. Chan, C.Y. Chen et al., “40 Physics, University of Rajasthan,
Letters, Vol. 24, No. 8, pp. 506-508, GHz Coplanar Waveguide Band pass Jaipur, India. He can be reached at
August 2003. Filters on Silicon substrate,” IEEE dbhatnagar_2000@rediffmail.com

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LOW COST SYNTHESIZER
Low Cost Meets High

Value in a Synthesized
Signal Generator
By Richard Houlihan
Hittite Microwave Corporation
S
ignal generation is
This new signal generator a core building
offers a high quality CW block for all trans-
output at a level as high as mit and receive architec-
+20 dBm, fast switching tures. Its advancement
speed and PC remote has enabled superior sys-
control via a USB port tem design and the prolif-
eration of the radio fre-
quency spectrum, both key contributors to the
rapid evolution of the wireless industry. Test
equipment manufacturers have played a key Figure 1 · Front view of the HMC-T2000 syn-
role in this effort by creating the means by thesized signal generator.
which we measure and evaluate these systems
as well as the components from which they are
built. However, many users are resigned to quency screening.
using elaborate equipment to perform very The high output power of +17 dBm (0.5 dB
basic functions with a significant portion resolution) allows the user the luxury of sim-
never using more than a fraction of the unit’s plifying their test configurations particularly
capability. in cases where inter-stage buffer amplifiers
Hittite Microwave Corporation is proud to are required. The output power is convenient-
introduce a new signal generation product ly leveled across certain frequency bands to
solution, the HMC-T2000. Built on a founda- ensure a consistent amplitude as one navi-
tion of high performance Hittite MMICs, the gates through frequency bands of interest.
HMC-T2000 is a synthesized signal generator However, the user may access the total maxi-
that combines essential capabilities with the mum output, approximately +20 dBm, if
benefits of a low acquisition cost of $3998. The desired. Figure 2 displays the unleveled out-
HMC-T2000 operates over a broad frequency put power capability of the HMC-T2000 over
range from 700 to 8,000 MHz and delivers a the entire frequency range.
high output power capability of +17 dBm. The One important measure of spectral purity
unit may also be controlled remotely via a is the generator’s ability to limit harmonic
USB port and graphical user interface (GUI) generation. Self-generated harmonic and spu-
on a PC. rious products typically manifest themselves
With an operating frequency range of 700 over the entire frequency range outside the
to 8,000 MHz, the HMC-T2000 covers all frequency of interest. Left unchecked, they can
major communication bands with a frequency play a significant role in reducing the overall
resolution of 1 MHz and a fast switching speed dynamic range of the entire measurement sys-
of 200 µs at 100 MHz steps. The HMC-T2000 tem and hence limit the measurement of the
is especially suited for CW frequency testing device under test. Expensive filter products
but can easily be programmed for swept fre- are sometimes required to attenuate unwant-

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BMA* DC to 22 GHz
BMMA DC to 28 GHz
BMZ DC to 18 GHz
BZ** DC to 2 GHz
VSWR:
BMA 1.02 + .008 (f) GHz
BMMA 1.05 + .01 (f) GHz
BMZ 1.05 + .01 (f) GHz
BZ 1.02 + .05 (f) GHz
Insertion Loss:
BMA .03 x √(f) GHz
BMMA .04 x √(f) GHz
BMZ .06 x √(f) GHz
BZ .15 x √(f) GHz
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BMA Radial: .020 (.51) Axial: .060 (1.5)
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In/Out VSWR 1.5:1/2:1 1.5:1/2:1
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NOISE ARRAY
Spatial Combining of
Multiple Microwave
Noise Radiators
By Jiri Polivka
Spacek Labs Inc.
N
oise generators
This article reports on are used to mea-
experiments to increase the sure noise figure
noise temperature of a in receivers, to test sys-
test system by combining tem health in built-in test
individual radiators in a (BIT) circuits, in jam-
two-dimensional matrix ming, and in testing digi-
tal data transmission
systems bit error rate (BER).
Combining a noise generator with an
antenna creates a noise radiator [1]. Such a
noise radiator generates a random (non-coher-
ent) noise field in which near-field interfer-
ence is not observed. A noise field can be uti-
lized in various experiments: field distribution
in waveguides, antennas and other structures,
testing the properties of moving objects, etc.
This paper discusses experiments to
increase the noise temperature or power den-
sity by the spatial combination of noise Figure 1 · Photograph and diagram and of
sources. The experiments were done to evalu- a noise radiator with DC bias circuit (diode is
ate this method as an alternative to using the e-b junction of a SMD transistor).
microwave amplifiers. The results confirm the
independence of individual noise sources and
the possibility of increasing the noise temper- For a matched resistor, the noise power Pn
ature as well, as possible focusing by adapting is traditionally defined as
the form of the noise source matrix.
Pn = kTB (1)
The Noise Radiator
The simplest noise radiator was described Where Pn is measured in watts, k is
in [1]. It is a half-wave dipole with a noise Boltzmann’s constant, 1.38 × 10–23 joules/
diode in it, plus a DC bias inserting circuit as Kelvin, T is the (ambient) temperature in
shown in Figure 1. In [2] more noise radiators Kelvins and B is the bandwidth in Hertz.
were described and compared. Their impor- A more practical formula is for Pn mea-
tant parameters are: sured in dBm is:
Excess Noise Ratio, the noise output
referred to a matched load under the ambient Pn(dBm) = –174(dBm/Hz) + 10logB(Hz) (2)
temperature, ~290K. Usually, ENR ~30 dB
when avalanche noise diodes are used. Finally, the ENR in dB is simply added to

NOISE ARRAY
the above equation to estimate the real power level that a

well-matched noise source delivers into a matched load θa or Θa
The noise bandwidth is usually determined by the
power meter (receiver). For example, we can take B ~500 Ts
θs or
MHz, and ENR ~30 dB as before. 10 log (500E8) is +87 Θs
dB, so Pn = –174 + 87 + 30 = –57 dBm.
Polarization Ratio (PR), the ratio of noise power den-
sity for copolar and orthopolar orientation of the receiving Ta
antenna with respect to noise radiator.
DC bias is required to generate noise by diode Figure 2 · Radiometry principle.
avalanche breakdown. Usually, noise diodes break down
with 6-10V reverse voltage, and the current is adjusted to
obtain the required noise spectrum. Usually 5-10 mA is Where Ta and Ts are in Kelvins, Θs and Θa in steradi-
best. Two such noise radiators were used slightly sepa- ans, θs and θa in degrees. The square approximation holds
rated, to simulate Young’s experiment that established for axially symmetric geometry.
the wave concept in optics [3]. The noise temperature In the described experiment the noise radiator or
detected by a remote (20-40 cm) radiometer with antenna matrix was positioned at ~40 cm distance from the
increased by factor of two when both noise radiators were radiometer antenna, the single noise radiator used a half-
biased. Varying the distance between the two noise radia- wave dipole ~13 mm long while the nine-dipole matrix
tors resulted in a smooth decrease from the maximum was ~48 mm long.
indicated noise temperature, but no interference effects Determining the viewing angle of the dipole is not
were observed.. easy as the ratios in Eq. (3) refer to antenna apertures.
The aperture of a half-wave dipole is often defined as an
Noise Radiator Matrix ellipse, with the longer axis ~one wavelength, the shorter,
In antenna technology, antennas can be arranged in ~one half-wavelength. In the matrix, these ellipses over-
arrays to improve directional concentration of the trans- lap, so the viewing solid angles are somewhat larger than
mitted energy. Radiation parameters of antenna arrays the radiator mechanical size (see Figure 3). The solid
are mathematically determinable, with sizes and dis- angle of the single dipole over 40 cm distance will be:
tances are referenced to the radiated wavelength [4]. This
is valid for coherent signal combination, where mutual θsV × θsH ~ 3.5 × 1.8 = 6.26 sterad
coupling and relative phase is important in all array ele-
ment radiators. For the matrix (Figure 4), we obtain:
With noise radiators, it was determined by experi-
ments [2] that they radiate a random noise field, with the θsV × θsH ~10.3 × 6.77 = 69.7 sterad
power density determined by ENR, and the radiation pat-
tern roughly corresponding to that of the dipole, with a The ratio of those solid angles indicates the possible
maximum radiation corresponding to the wavelength of ratio of the detectable noise temperatures:
the radiator dipole. The spectral function of a noise radi-
ator was investigated [1] by direct tests at different fre- Tm / Td = 69.7/6.26 = 11.1 times
quencies, and by measuring the coherence radius.
The question addressed by these experiments was: where Tm is the noise temperature received from the
While the noise power density should grow with the num- matrix, and Td is that detected from the single dipole.
ber of noise radiators in a matrix, how the radiation dia- Obviously, one would expect that the noise temperature
gram and polarization ratio will be affected? should increase nine-fold—the sum of the nine noise
Radiometric Approach
Figure 2 illustrates the radiometry principle, As long
as the viewing angle of a target is smaller than the receiv-
ing antenna beam width, the radiometer connected to
that antenna will read antenna noise temperature equal
to the target temperature, diminished by the ratio of
these solid angles:
Ta = Ts (Θs / Θa) ~ Ts (θs / θa)2 (3) Figure 3 · Approximate aperture of the dipole noise
radiator.
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Figure 4 · Equivalent aperture of the 3 × 3 element noise dipole matrix.
radiators that comprise the matrix. ratio (PR) was >20 dB.
The results of the experiment, Next, three inline radiators were LC Miniature
however, gave Tm / Td as approxi- tested with their diodes were con- Filters
mately five times instead of nine nected in series. The directivity of the
times greater. array was similar to that of the single
Still, the result is a significant dipole was observed, as shown in the Small package.
increase, and can be accepted as con- Green trace, however, the PR was High volume.
firming the possibility of augmenting poorer due to inexact mechanical
the noise temperature by the spatial alignment. Right price.
combination of noise radiators. So far, In the nine-element matrix, the
the efficiency of the matrix can only noise radiators were mounted in a Large-scale production
be estimated. block of polyethylene foam, and the capabilities and custom
Note that the LNB input horn three triplets were biased in parallel. design solutions that
antenna used in the radiometer has a ~50 V, ~21 mA was necessary for the work for you – today
beam width of ~86 degrees, therefore, complete matrix. The blue trace in and tomorrow.
the detected noise temperature will Figure 6 shows the results—again a
be not affected by it, per Eq. (3). slight directivity above the single
noise radiator was observed, but only s(IGHVOLUMELOWCOSTMINIATUREFILTERS
UPTO'(Z
The Experiments ~7 dB PR, obviously due to the
The experiment measured the mechanical deviations. The excess s!VAILABLEIN0#"ANDSURFACEMOUNT
radiation of one noise radiator, three CONFIGURATIONS
noise radiators in line, and the
s%XCELLENT0ERFORMANCETO#OST2ATIO
matrix of nine noise radiators, in a 3
× 3 two-dimensional arrangement s#USTOM$ESIGNSAVAILABLE
(see Figures 5 and 6).
The receiver was a 11 GHz
radiometer, with a 0.4 dB LNB. The
distance between receiver antenna
and the tested radiators was 40 cm.
Figure 7 presents the results of
tests, with the measured radiation
patterns compared on a single plot. To find out more, call
The red trace is the result for one (800) 344-2412 or
noise radiator (as described in [3]). visit www.trilithic.com.
Its radiation pattern was like that of Figure 5 · Photo of the assembled 9
a dipole, and its copolar/orthopolar × 9 noise dipole matrix.

NOISE ARRAY
noise temperature on-axis, however, mined; both CRs were 9.5-10 cm, in Hz, c is the speed of light, 3E8 m/s,
increased only ~5 times only. With a from any point on axis to the noise and CR is the coherence radius mea-
conductive reflector added about one temperature dropping to one-half. sured on-axis from one noise temper-
wavelength behind the matrix, the The spectrum bandwidth can be ature value to its half value, by
on-axis noise temperature increase, calculated by [1]: increasing the distance from the radi-
was observed to be ~8 times. ator to radiometer antenna. From
Following the method presented BW = 0.605 c / CR (4) this equation, the noise spectrum
first in [1], the coherence radius (CR) bandwidth is ~1.8 GHz with a center
of both noise radiators was deter- where BW is the spectrum bandwidth at ~11 GHz.
Conclusions
The experiment with a 3x3 array
of noise radiators confirmed that:
• Combining several noise radiators

in a 2-D matrix combines the
resulting on-axis noise tempera-
ture by less than the sum of indi-
vidual radiator contributions,
although the combining efficiency
is only estimated.
• The directional radiation pattern is
mostly unaffected by using the
matrix as compared to a single
noise radiator, as expected from no-
coherent sources.
• The copolar/orthopolar (PR) ratio
has deteriorated, due to imperfect
planarity of the dipoles, due to the
presence of bias lines, etc.
• No interference effects were
observed; the rotation and move-
ment of the matrix under bias
always produced a smooth
response. It is confirmed that all
array noise radiators remain non-
coherent and independent, and no
coupling among the individual
radiators occurs.
As an alternative to using wide-

band high-gain amplifiers, the spa-
tial array combination of noise radia-
tors offers to multiply the on-axis
noise power density or noise temper-
ature.
By curving the face of the matrix,
or by using reflectors, it is expected
that the radiation pattern can be
shaped and possibly focused.
All described experiments were
done on a laboratory bench. No ane-
choic arrangement was necessary as
no interference field was created.

Figure 6 · Layout and biasing arrangement for the 9 × 9 matrix.
References Hill, New York, 1950

1. J. Polivka, “Active MW 5. J. Polivka, “Overview of
Radiometry And Its Applications,” Microwave Sensor Technology,” High
Internat. Journal of IR and MM Frequency Electronics, April 2007,
Waves, Vol.15, March 1995, pp.1673- pp. 32-42.
1683 6. Amplified Noise Sources,
2. J. Polivka, “Mapping Field www.NoiseCom.com.
Distribution in Microwave
Radiators,” Internat. Journal of IR Author Information
and MM Waves, Vol.16, Oct,1996, Dr. Jiri Polivka is Chief Scientist
pp.1779-1788 at Spacek Labs Inc., 212 East
3. J. Polivka, “Noise Can Be Good, Gutierrez St., Santa Barbara, CA
Too,” Microwave Journal, March 93101. He can be reached by tele-
2004, pp. 66-78 phone at 805-564-4404 or by e-mail at
4. J.D. Kraus, Antennas, McGraw- polivka@spaceklabs.com.
Figure 7 · Measured radiation patterns for the three configurations: single

noise dipole (red), three dipoles inline (green), and the 9 × 9 matrix (blue).

ANTENNA ARRAYS
A Review of the
Performance Capabilites of
Antenna Arrays
By Gary Breed
Editorial Director
A
ntenna arrays are 2 elements
This tutorial shows some back in the news
of the coverage patterns for engineers, with
that can be obtained with MIMO (multiple input,
antenna arrays, with the multiple output) technol-
intent of illustrating array ogy beginning to be
capabilities to engineers deployed for improved
who do not regularly work wireless communications.
with antennas When we also consider
established technologies
such as radar and broadcasting, it’s clear that Figure 1 · This is the pattern shape obtained
antenna arrays are an important part of RF from two antenna elements spaced λ/2, fed
and microwave systems. with equal in-phase currents.
This subject is far too detailed to explain in
one short tutorial, so readers are encouraged to
do more reading, beginning with the references examples in this article, the elements are
at the end of this article. arranged in line—they would be left to right
across the bottom of each plot.
Evolution of Arrays from Single Antennas If we had simply extended the array of
At some time in our education, we are Figure 1 and maintained all elements in-phase
exposed to the basic “figure eight” pattern of and with equal currents, the resulting pattern
the dipole, or the omnidirectional horizontal would have had large sidelobes. Instead, the
pattern of a vertical monopole. For this article, current is “tapered,” with the center element
the antenna elements are short dipoles, oper- having more than twice as much current as the
ating in free space, oriented vertically so that two outer elements. For maximum radiation
they are omnidirectional in the horizontal directly broadside, all currents are in-phase.
plane. The plots are one-half of the resulting 3 elements
horizontal patterns.
Figure 1 begins the discussion by showing
the pattern shape obtained with two elements,
spaced one-half wavelength, fed in-phase with
equal currents. The improvement of two ele-
ments compared to the omnidirectional pattern
of one element is quite significant. This illus-
trates the power of arrays—large directivity
and gain improvements can be had with rela-
tively simple arrays having only a few elements. Figure 2 · When a third element is added,
Figure 2 is one step toward greater com- with currents adjusted to minimize unwanted
plexity, a three-element array. As with all the sidelobes, a narrower pattern is achieved.

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UPG2009TB High power, high isolation, low insertion loss
UPG2155TB High power, low harmonics, for GSM • •
UPG2157T5F High power, non-reflective, optimized for WiMAX • •
UPG2158T5K Medium power, miniature pkg, spec’d at 1.8 & 2.7 V • • • •
UPG2159T5K Low insertion loss, high isolation, miniature package • • •
UPG2163T5N 2 – 6 GHz, industry’s best insertion loss, compact pkg • •
UPG2176T5N High power, non-reflective, compact package • •
UPG2179TB Medium power, high performance, standard pin-out • • • •
UPG2185T5K 2 – 6GHz, miniature 1.0 x 1.0 x 0.37 mm package • •
UPG2214TB/TK Low cost, performance guaranteed at 1.8 and 3 Volts • • •
SINGLE CONTROL SPDT
UPG2010TB High power, high isolation, low insertion loss • • •

UPG2012TB/TK Great at 2.4 GHz, industry-standard or miniature package • • •
UPG2015TB Medium power, great performance • • • •
UPG2160T5K Miniature 1.0 x 1.0 x 0.37 mm package • •
UPD5713TK Low cost CMOS, miniature package • •
MULTI-THROW SWITCHES
UPG2031TQ SP3T Ideal for CDMA2000-1x dual band, GPS • • • •

UPG2150T5L SP3T Extra isolation for WiFi & Bluetooth apps • • •
UPG2162T5N DPDT 2.4 – 6GHz dual-band, compact, high isolation • • •
UPG2164T5N DPDT 2.4 – 6GHz dual-band, compact, low insertion loss • • •
UPG2181T5R DP4T High power, non-reflective •
UPD5731T6M SP4T CMOS, only two control lines req’d, miniature pkg • •
Custom Antenna Switches, too!

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ANTENNA ARRAYS
4 elements 6 elements
split beam
Figure 5 · More complex patterns may also be

6 elements obtained, such as this beam with a deep notch at
boresight, flanked by two major lobes.
The narrower pattern of three elements is clearly seen in

comparison with the two-element array.
Figure 3 shows progressively narrower patterns with
more elements. From top to bottom, these are arrays of
four, six and eight elements. Note the very small improve-
ment from six to eight elements. The eight-element array
would benefit from further optimization.
8 elements
The relative phases and currents of antenna elements
can create a huge variety of pattern shapes. For example,
a smart antenna might simply have an electronically
steerable array. Figure 4 shows a four-element array with
phases selected to move the main beam 15 degrees from
the broadside direction. This figure does not have opti-
mized phases and currents, so a significant sidelobe is
seen toward the right side. Although not optimized, this
sidelobe is more than 20 dB down from the main lobe and
may be acceptable without further adjustment.
Finally, Figure 5 shows a more complex pattern, with a
Figure 3 · From top to bottom are the progressively deep notch in the broadside direction, which would be use-
narower minimum-sidelobe patterns for inline arrays of ful for eliminating a strong interfering signal arriving
4, 6 and 8 elements, respectively. from that direction. This pattern has two moderately
broad lobes on either side, but patterns with single major
lobes can also be achieved.
4 elements
steered
Summary Comments
A the old saying goes, pictures often show more than
words. This “bite-size” tutorial is intended to illustrate
some of the pattern characteristics of antenna arrays. We
hope this is useful as a beginning to your appreciation of
this part of communication engineering.
References
1. John Kraus, Antennas, McGraw-Hill, (any edition) 1950
to present. Current 3rd edition is co-authored by Ronald
Figure 4 · The narrow beam of a multi-element array- Marhefka.
can be steered by adjusting the phase and currents for 2. Henry Jasik, editor, Antenna Engineering Handbook,
each element. This 4-element offset pattern was creat- McGraw-Hill, (any edition) 1961 to present. Current 4th
ed using straightforward phasing and the same current edition is edited by John Volakis.
distribution of the boresight array at the top of Figure 3. 3. Plots created using EZNEC+, www.eznec.com

Z VA
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IF/RF MICROWAVE COMPONENTS 440 Rev A

NEW PRODUCTS
kit includes hardware, cables, and compliant, 2 × 2 × 0.6 mm plastic

verbose software which will pro- package. Pricing depends on quan-
vide a user friendly GUI. tities.
Availability of the development kit Skyworks Solutions, Inc.
is planned for Q1 2008. Prices for www.skyworksinc.com
the kit start at $4,999 USD.
NuWaves Engineering
Micro-miniature TCXOs www.nuwaves-ltd.com
NDK (Nihon Dempa Kogyo Co.,
Ltd.) announces the availability of
their NT2520SA series, an SMD
TCXO (temperature compensated
crystal oscillator) measuring 2.5 ×
2.0 mm with a height of 0.8 mm
max. and weighing 0.013 g. Two New Test Cables
Exhibiting very tight frequency Rosenberger introduces two
stability of ±0.5 ppm over the unique products to improve pro-
broad operating temperature ductivity in test applications. The
range of –30 to +85°C makes this ZigBee Radio Module SMA Quick-Lock™ provides a
oscillator ideal for GPS, PND, and California Eastern Laboratories unique locking mechanism to
cellular phone handset applica- has added another transceiver replace threaded SMA male con-
tions. It is available in frequencies platform to its growing family of nections. The SMA Push-On™
ranging from 13 to 38.4 MHz and ZigBee/IEEE 802.15.4 radio mod- offers a faster slide on connection.
popular GPS frequencies of 13, ules. CEL’s new Matrix module is Both work with any SMA female
16.368, 16.369, 16.8, 19.2, 24.5535, based on the Texas Instruments™ connector. These products are
26, 27.456, & 38.4 MHz. Delivery is CC2430 transceiver platform and offered as test cables in various
12 weeks ARO. joins CEL’s Freescale™-based sizes, cable types and configura-
NDK (Nihon Dempa Kogyo Co., Ltd.) modules in providing a fully-inte- tions and provide excellent electri-
www.ndk.com grated, drop-in ZigBee radio solu- cal performance to 18 GHz.
tion. The module measures just 23 Rosenberger of North America, LLC
× 29 mm. An integrated antenna www.rosenbergerna.com
helps to reduce total system costs,
while an integrated ADC allows
direct connection to analog sen-
sors. Evaluation kits are also avail-
able.
California Eastern Laboratories
www.cel.com
RF Upconverter SP3T Antenna Switch

A new high performance, multi- Skyworks Solutions, Inc.
octave RF upconverter delivers a announces SKY13309-370 LF, a S-band Coaxial Resonator
spectrally pure RF output yielding single pole three throw (SP3T) Oscillator
a highly flexible input and output antenna switch for the 2.4-2.5 GHz Z-Communications, Inc. announces
frequency range selection. The band. The low loss, high isolation, the introduction of their new lead
RF2-3000UCV1 model offers the high linearity, small size, and low- free, RoHS compliant, coaxial res-
end user design versatility. The IF cost features make this switch onator oscillator (CRO2545B-LF)
input ranges from 2 MHz to 70 ideal for wireless local area net- in S band (2500-2590 MHz) offer-
MHz to provide a RF upconversion work (WLAN), Bluetooth® sys- ing an ultra low (typ) phase noise
between 2 MHz and 3 GHz with tems, and other applications performance of –107 dBc/Hz at 10
gain flatness under 2 dB for the including analog and digital kHz offset. This design offers a lin-
specified spectrum. It has 50 dB of mobile television in emerging mar- ear tuning sensitivity of 30 MHz/V
attenuation control with incremen- kets, wireless headsets, and receiv- (typ) and covers the band between
tal steps of 0.5 dB. The frequency er chain of phones. This pHEMT 0.5-4.5 V. It has excellent (typ) 2nd
step size is 5 kHz. The device can GaAs integrated circuit switch harmonic suppression of –20 dBc.
handle input signals up +8 dBm. operates up to the 3 GHz frequen- It is designed to deliver 5 dBm out-
NuWaves Engineering is offering a cy range. The switch is packaged in put power (typ) at 5 Vdc supply
development kit to assist users in a lead (Pb)-free and restriction of while drawing 20 mA (typical) over
getting up-and-running fast. The hazardous substances (RoHS)- the extended operating tempera-

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IF/RF MICROWAVE COMPONENTS 403 Rev J

NEW PRODUCTS
ture range of –40º to 85ºC. This a remote location for better signal ware platform from Agilent
VCO is ideal for automated surface strength. Electrically, this antenna Technologies. The Agilent ADS
mount assembly and reflow. It is has a power handling capability of design integration package fea-
available in tape and reel packag- 10 watts. It is vertically polarized tures a broad set of simulation
ing for production requirements. with an elevation pattern of 60 technologies for developers of wire-
Z-Communications, Inc. degrees and 360 degrees in less products, such as cellular and
www.zcomm.com azimuth. The VSWR is <2.1. portable phones, pagers, wireless
Mechanically, the PCD800V is 1/2" networks, radar and satellite com-
in diameter and only 8-1/2" long. munications systems, and high-
This low profile antenna is avail- speed digital serial links. With
able for the cellular 824-896 MHz ADI’s analog-to-digital converter
(PCD800V), PCS 1850-1970 MHz models, Agilent’s ADS users can
(PCD1900V), and the spread spec- now identify and test off-the-shelf
trum 2.4-2.5 MHz frequencies converters for their designs during
(PCD2400V). the early stages of development,
Astron Wireless eliminating costly re-specification
www.astronwireless.com and re-design steps. In addition,
Agilent’s ADS enables fully stan-
New Miniature GPSDO dard-compliant evaluations for
Frequency Standard 4th-Generation (4G) systems such
Jackson Labs announced the avail- as HSDPA (High-Speed Downlink
ability of FireFly. FireFly is an Packet Access), 3GPP LTE (3rd-
extremely small Global Positioning Generation Partnership Long
System Disciplined Oscillator Term Evolution) and WiMAX.
(GPSDO) that has very low power Analog Devices
consumption, delivers long-term www.analog.com
performance similar to Atomic Agilent Technologies
Frequency Standards, and sup- 20 to 38 GHz GaAs MMIC Low www.agilent.com
ports mobile as well as stationary Noise Amplifier
applications. At 1.25 cubic inches Mimix Broadband, Inc. introduces
small, FireFly provides Stratum-1 a GaAs MMIC low noise amplifier
long-term performance of better (LNA) offered in an RoHS compli-
than 10 parts per trillion (1E-011) ant, standard 3 × 3 mm QFN plas-
averaged over 24 hours when tic package, covering 20 to 38 GHz.
locked to GPS at less than 1/2 the This LNA, identified as XL1010-
size of the smallest competitive QT, delivers 3 dB noise figure and T1 Public Safety Radio
products. The unit generates both 17 dB small signal gain and is well Carlson Wireless announces that it
an OCXO-driven 1PPS output that suited for multiple receiver appli- recently acquired the SafeTLink™
is phase–synchronized to better cations that require broadband point-to-point T1 digital micro-
than 100ns rms to UTC, and a syn- performance with simple bias wave 4.9 GHz radio. The radio
chronized low-noise +12 dBm 10 requirements. The XL1010- QT operates in the 4.9 GHz public
MHz sine-wave output. FireFly also includes on-chip ESD protec- safety frequency band and trans-
has excellent phase noise, superior tion structures and DC by-pass mits a full or fractional T1 signal
spurious suppression, and very low capacitors to ease implementation along with an independent IP data
jitter at a power consumption of and volume assembly. Mimix per- stream. The radio incorporates
only 1.4W typically. forms 100% RF testing on the Carlson Wireless’ TrueTDM™
Jackson Labs Technologies, Inc. XL1010-QT. Samples are available technology with IP. TrueTDM
www.jackson-labs.com today from stock, along with pro- allows for fully synchronous time
duction quantities in six to eight division multiplexed fixed-latency
Omni Directional Dipole weeks. of less than 4 milliseconds. This
Antenna Mimix Broadband, Inc. provides wireline quality for voice
Astron Wireless Technologies www.mimixbroadband.com and 4-wire/E&M signaling.
offers a 3dBi omni directional SafeTLink also operates in the
dipole antenna to replace the stan- High-Speed ADC lower and upper 1 MHz channels
dard rubber ducky or whip anten- Analog Devices, Inc. announced of the 4.9 GHz public safety band
na on a wireless telephone termi- the availability of its high-speed leaving the 5 MHz channels avail-
nal (Wireless Local Loop) or data analog-to-digital converter (ADC) able for other purposes
devices. The PCD800V allows the behavior models for the Advanced Carlson Wireless
subscriber to place the antenna in Design System (ADS) EDA soft- www.CarlsonWireless.com

antennas include Ethertronics’ EVM at 64 QAM OFDM) and a
patented Isolated Magnetic high gain of 30 dB when operated
Dipole™ (IMD) technology. at 3.3V and 400 mA. The half watt
Ethertronics’ miniature GPS MGA-30x16 family of power ampli-
antenna measures 8 × 3 × 1.3 mm. fiers provides very high linearity
Additionally, the high-selectivity of and exceptional PAE (power added
the antenna’s RF response elimi- efficiency) at 1 dB gain compres-
nates the need for additional filters sion point for base station applica-
50-Watt 700-800 MHz SSPA for removing UMTS- or AWS-band tions ranging from 750 MHz to 3.9
Stealth Microwave introduces the signal interference. Measuring 12 GHz.
SM07080-47, a GaAsFET amplifier × 3 × 1.3 mm, the dual-band, dual- Avago Technologies
designed for next generation 700 feed GPS/Bluetooth combination www.avagotech.com/rf
MHz applications. The unit oper- antenna provides unparalleled
ates from 700 to 800 MHz with a performance in an extremely small Wide Bandwidth RF Memory
P1dB of +47 dBm (min.). Small sig- package. Ethertronics’ Savvi Line KOR Electronics has introduced
nal gain is 55 dB with a flatness of of ceramic antennas also includes: the CRFM-9041, a wide band-
±0.5 dB across the band. Standard a WLAN, WiMAX, combination width, ultra-fine resolution
features include thermal protec- PCS/ WiMAX, and a compact Coherent Radio Frequency
tion with auto reset and Bluetooth antenna. Memory (CRFM). Sampling at
over/reverse voltage protection. Ethertronics 2,200 MHz, the CRFM captures,
Optional features include TTL www.ethertronics.com stores, and replays RF signals,
on/off, RF sampling, and high delaying the signal up to 7.5 ms
speed switching up to 1 µs. In mod- with 1 ns resolution. The CRFM is
ule form, the unit measures 7.5 × a multi-functional test asset for
3.97 × 0.79 inches. development of EW, radar, seeker,
Stealth Microwave, Inc. and communication systems. Up to
www.stealthmicrowave.com 1 GHz instantaneous bandwidth is
available with –45 dBc spurs. The
CRFM fits into a 5-slot 6U VME
card cage, and is supplied with sin-
gle board computer, master oscilla-
High-Power Coaxial Relays tor, power supply, and either a
RelComm Technologies, Inc. has desktop or rack mount enclosure.
available a new high power 1P2T KOR Electronics
coaxial relay with Type N connec- www.korelectronics.com
tors. This robust device is
High Power Single and Dual enhanced throughout with low
Directional Couplers loss, high temperature dielectrics
RLC Electronics’ high power direc- and is configured in an industry Laboratory
tional couplers offer accurate cou- standard outline. Performance is (RF)MicroProbe
pling, low insertion loss and high rated to 3 GHz VSWR 1.20:1 maxi- Station
directivity in a compact package. mum, insertion loss 0.20 dB maxi- Extremely Low Cost
The standard units are optimized mum and isolation better than –60 < $10,000 US
for 2 octave bandwidths and are dB. Power handling is rated 1 kW DC/RF/Microwave Test
available with a choice of coupling CW at 1 GHz and 600 watts CW at
values. These units are ideal for 3 GHz. This device can be provided A ultra compact, manually operated probe station for engineers,
scientists and students. Measure Microwave, RF and IV parameters of
sampling forward and reflected in latching or failsafe configura- Semiconductor Devices. Characterize MEMS, wireless, photonic and
power with a negligible effect on tions and includes auxiliary posi- nanoelectronic components and assemblies.
the transmission line and very low tion indicators. • Benchtop Size(1ft2) • 2” Vacuum chuck with pump• 1” X-Y-Ø stage with z-lift•
•2 ea. 0.5” X-Y-Z probe positioners, includes 2 ea. 18 GHz probes & DC needles•
intermodulation products. RelComm Technologies, Inc. •10X/30X Stereo Zoom Trinocular Microscope • Flourescent Illuminator •
•Compatible with additional Magnetic Mount Positioners(optional)•
RLC Electronics, Inc. www.relcommtech.com •Compatible with industry standard microwave probes(optional)•
www.rlcelectronics.com •Cost effective for research projects•
Power Amplifiers for Wireless
J microTechnology
Miniaturized Ceramic Avago Technologies has announced 3744 NW Bluegrass Pl
Antennas two new power amplifier product

Portland, OR 97229
(503) 614-9509
(503) 531-9325 [FAX]
J micro Technology
Ethertronics Inc. introduced two families designed for next genera- www.jmicrotechnology.com
new miniaturized ceramic anten- tion cellular and WiMAX applica- Research Performance / Student Price
nas: an innovative GPS/Bluetooth tions. The ALM-42316 delivers 23
version and a GPS antenna. Both dBm linear output power (2.5% Get info at www.HFeLink.com
April 2008 61
IEEE MICROWAVE THEORY AND TECHNIQUES SOCIETY
INTERNATIONAL MICROWAVE SYMPOSIUM
ATLANTA, GA • JUNE 15–20, 2008
ES ON MY MI
ROWAV ND
M IC
Mark Your Calendar Now

TO ATTEND THE
2008 IEEE MTT-S INTERNATIONAL
MICROWAVE SYMPOSIUM & EXHIBITION
June 15–20, 2008 • Georgia World Congress Center
Featuring Technical Sessions and Workshops for Wireless, Commercial and Military Applications
• Field Analysis and Guided Waves • Frequency Conversion and Control
• Frequency Domain Techniques • HF/VHF/UHF Technologies and Applications
• Time Domain Techniques • Power Amplifier Devices and Integrated Circuits
• CAD Algorithms and Techniques • High Power Amplifiers
• Linear Device Modeling • Low Noise Components and Receivers
• Nonlinear Device Modeling • Millimeterwave and Terahertz Components and Technologies
• Nonlinear Circuit Analysis and System Simulation • Microwave Photonics
• Transmission Line Elements • Digital Circuits and Systems at GHz Speeds
• Passive Circuit Elements • Packaging, Interconnects, MCMs and Hybrid Manufacturing
• Planar Passive Filters and Multiplexers • Instrumentation and Measurement Techniques
• Non-Planar Passive Filters and Multiplexers • Biological Effects and Medical Applications
• Active and Integrated Filters • Smart Antennas, Spatial Power Combining and Phased Arrays
• Ferroelectric, Ferrite and Acoustic Wave Components • Radars and Broadband Communication Systems
• MEMS Components and Technologies • Wireless and Cellular Communication Systems
• Semiconductor Devices and Monolithic IC Technologies • Sensors and Sensor Systems
• Signal Generation
In addition to the outstanding Symposium, visit the World’s Largest Microwave Exhibition, featuring more than 400 industry
innovators displaying their newest wireless and commercial products and services. Once again this year, industry
representatives will be presenting application and marketing seminars that will be open to all attendees.
For information on attending the 2008 IEEE MTT-S International Microwave Symposium, please visit the official
show Website: www.ims2008.org. For information on the exhibition, please contact the Exhibition Manager at:
Microwave Journal Telephone: 781-769-9750
685 Canton St. Fax: 781-769-5037
Norwood, MA 02062 Email: mwj@mwjournal.com
Conference Programs will be mailed in March
Access MTT-S On-Line at Microwave Journal® via http://www.mwjournal.com.

Advertiser Index
Company.......................................................................Page Company.......................................................................Page
Agilent Technologies .............................................................9 Mini-Circuits .......................................................................11

American Technical Ceramics (ATC) .................................25 Mini-Circuits .......................................................................15
Applied Wave Research (AWR)...........................................21 Mini-Circuits .......................................................................37
AR RF/Microwave Instrumentation...................................35 Mini-Circuits ..................................................................42-43
Besser Associates ................................................................50 Mini-Circuits .......................................................................45
California Eastern Laboratories ........................................55 Mini-Circuits .......................................................................57
CST ......................................................................................23 Mini-Circuits .......................................................................59
C.W. Swift & Associates .............................................Cover 2
MITEQ ...................................................................................1
DAICO .................................................................................41
MITEQ ........................................................................Cover 4
Emerson Network Power ......................................................4
Molex RF.....................................................................Cover 3
Hittite Microwave Corporation ..........................................33
RelComm .............................................................................47
IEEE 2008 International Microwave Symposium ............62
J microTechnology...............................................................34 RLC Electronics ..................................................................27
J microTechnology...............................................................34 Samtec .................................................................................31
J microTechnology...............................................................61 SV Microwave......................................................................39
Krytar ..................................................................................52 Teledyne Cougar....................................................................7
Linear Technology ...............................................................13 Trilithic ................................................................................51
Micro Lambda Wireless ......................................................19 Trilithic ................................................................................53
Microwave Components ......................................................49 TriQuint Semiconductor .....................................................17
Mini-Circuits ......................................................................2-3 WiseWave/Ducommun ........................................................29
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Advertising and media information is available online at www.highfrequencyelectronics.com
April 2008 63
DESIGN NOTES
Return Loss, Reflection Coefficient and VSWR Return loss (RL) is the ratio of the magnitude of the
Here is a brief review of three related RF trans- forward and reverse traveling waves, squared to rep-
mission parameters, along with a reference table of resent power and converted to dB. Thus, it is related to
their values. reflection coefficient by
At high frequencies, the actual voltages, currents
and phase relationships that define an impedance are Γ|2)
RL = 10 log (|Γ
difficult to measure directly. Instead, we use steady-
state measurements of the traveling waves in trans- Voltage standing wave ratio (VSWR) dates to the
mission lines, which can be separated by a directional time when slotted lines were the primary means of
coupler into those traveling in “forward” and “reverse” transmission line measurements. VSWR is simply the
(or “reflected”) directions. ratio of the standing wave maxima and minima, as
Return loss, reflection coefficient and voltage stand- measured by moving the probe along the line. Being a
ing wave ratio are different numerical values for these voltage measurement, it is related to Γ by
radio frequency transmission measurements.
Although they are related mathematically, each refers Vmax Vfwd + Vref Γ|
1+|Γ
VSWR = = =
to a different means of measurement or analysis. Vmin Vfwd – Vref Γ|
1–|Γ
Γ) is the fraction of a forward
Reflection coefficient (Γ
traveling wave that is reflected from a mismatched VSWR is typically used with installed systems
load, expressed in polar coordinates (|Γ Γ|(θ). The mag- such as transmitter and antenna installations. RL and
nitude has no units, since it is a ratio, and is also Γ are more common in laboratory practice.
referred to as rho (ρ ). The phase angle may be given as The accompanying table is a handy reference to
0 to 360 degrees or +180 to –180 degrees, depending on equivalent values of RL, VSWR and |Γ Γ| over a range
the analytical system that will use the data. of RL values from 1 to 60 dB.
Return VSWR Reflection Return VSWR Reflection

Loss (dB) Coefficient Loss (dB) Coefficient
Magnitude Magnitude
60.00 1.002 0.001 14.00 1.499 0.200
55.00 1.004 0.0018 13.50 1.536 0.211
50.00 1.006 0.0032 13.00 1.577 0.224
45.00 1.011 0.0056 12.50 1.622 0.237
40.00 1.02 0.01 12.00 1.671 0.251
37.00 1.029 0.0141 11.50 1.70 0.266
34.00 1.041 0.020 11.00 1.75 0.282
31.00 1.058 0.0282 10.50 1.785 0.299
30.00 1.065 0.0316 10.00 1.851 0.316
29.00 1.074 0.0355 9.50 2.007 0.335
28.00 1.083 0.0398 9.00 2.10 0.355
27.00 1.094 0.0447 8.50 2.15 0.376
26.00 1.106 0.0501 8.00 2.323 0.398
25.00 1.119 0.0562 7.50 2.458 0.422
24.00 1.135 0.0631 7.00 2.615 0.447
23.00 1.152 0.0708 6.50 2.796 0.473
22.00 1.173 0.0794 6.00 3.10 0.501
21.00 1.196 0.0891 5.50 3.263 0.531
20.00 1.222 0.1 5.00 3.57 0.562
19.00 1.253 0.112 4.50 3.946 0.596
18.00 1.288 0.126 4.00 4.419 0.631
17.00 1.329 0.141 3.50 5.030 0.668
16.50 1.352 0.150 3.00 5.848 0.707
16.00 1.377 0.159 2.50 7.00 0.750
15.50 1.404 0.168 2.00 8.724 0.794
15.00 1.433 0.178 1.50 11.610 0.841
14.50 1.464 0.188 1.00 17.391 0.891

VSWR POWER
FREQ. (Max.) (Watts, Max.)
FREQ. MODEL COUPLING FLATNESS INSERTION LOSS DIRECTIVITY PRI. SEC. AVG. AVG. PEAK
(GHz) NUMBER (dB) (±dB) (dB, Max.) (dB, Typ.) LINE LINE FORWARD REVERSE (kW)
0.5–1 CD-501-102-10S 10 ±1.25 0.75 0.8 20 1.2:1 1.2:1 50 5 3

CD-501-102-20S 20 ±1.25 0.75 0.25 20 1.2:1 1.2:1 50 50 3
CD-501-102-30S 30 ±1.25 0.75 0.2 20 1.2:1 1.2:1 50 50 3
1–2 CD-102-202-10S 10 ±1.25 0.75 0.8 20 1.25:1 1.25:1 50 5 3

CD-102-202-20S 20 ±1.25 0.75 0.25 20 1.25:1 1.25:1 50 50 3
CD-102-202-30S 30 ±1.25 0.75 0.2 20 1.25:1 1.25:1 50 50 3
2–4 CD-202-402-10S 10 ±1.25 0.75 0.8 20 1.25:1 1.25:1 50 5 3
CD-202-402-20S 20 ±1.25 0.75 0.2 20 1.25:1 1.25:1 50 50 3
CD-202-402-30S 30 ±1.25 0.75 0.2 20 1.25:1 1.25:1 50 50 3
2.6–5.2 CD-262-522-10S 10 ±1.25 0.75 1 20 1.25:1 1.25:1 50 5 3
CD-262-522-20S 20 ±1.25 0.75 0.5 20 1.25:1 1.25:1 50 50 3
CD-262-522-30S 30 ±1.25 0.75 0.3 20 1.25:1 1.25:1 50 50 3
4–8 CD-402-802-10S 10 ±1.25 1 1 16 1.4:1 1.4:1 50 5 3
CD-402-802-20S 20 ±1.25 0.75 0.4 20 1.3:1 1.3:1 50 50 3
CD-402-802-30S 30 ±1.25 0.75 0.25 20 1.3:1 1.3:1 50 50 3
7–12.4 CD-702-1242-6S 6 ±1.25 0.5 2 17 1.3:1 1.3:1 50 5 3
CD-702-1242-10S 10 ±1.25 0.5 1 17 1.3:1 1.3:1 50 5 3
CD-702-1242-20S 20 ±1.25 0.5 0.35 17 1.3:1 1.3:1 50 50 3
CD-702-1242-30S 30 ±1.25 0.5 0.3 17 1.3:1 1.3:1 50 50 3
7.5–16 CD-752-163-10S 10 ±1.25 0.75 1.2 15 1.35:1 1.35:1 50 5 2
CD-752-163-20S 20 ±1.25 0.75 0.55 15 1.35:1 1.35:1 50 50 2
CD-752-163-30S 30 ±1.25 0.75 0.5 15 1.35:1 1.35:1 50 50 2
12.4–18 CD-1242-183-10S 10 ±1.25 1 1.2 12 1.5:1 1.5:1 50 5 1
CD-1242-183-20S 20 ±1.25 0.75 0.55 15 1.5:1 1.5:1 50 50 1
CD-1242-183-30S 30 ±1.25 0.5 0.5 15 1.5:1 1.5:1 50 50 1
1–10 CD-102-103-10S 10 ±1.5 1 1 15 1.5:1 1.5:1 50 5 1
CD-102-103-20S 20 ±1.5 0.8 0.8 15 1.5:1 1.5:1 50 50 1
CD-102-103-30S 30 ±1.5 0.5 0.6 15 1.5:1 1.5:1 50 50 1
100 Davids Drive • Hauppauge, NY 11788

TEL.: (631) 436-7400 • FAX: (631) 436-7430
www.miteq.com

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