NGTB25N120IHLWG

IGBT
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications. Incorporated
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into the device is a rugged co−packaged free wheeling diode with a
low forward voltage.
25 A, 1200 V
Features VCEsat = 1.85 V
• Low Saturation Voltage using Trench with Fieldstop Technology
Eoff = 0.8 mJ
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Case Temperature in IH Cooker Application C
• Low Gate Charge
• These are Pb−Free Devices

Typical Applications
G
• Inductive Heating
• Consumer Appliances
E
• Soft Switching

ABSOLUTE MAXIMUM RATINGS

Rating Symbol Value Unit
Collector−emitter voltage VCES 1200 V
Collector current IC A G TO−247
C
@ TC = 25°C 50 E CASE 340L
@ TC = 100°C 25 STYLE 4
Pulsed collector current, Tpulse ICM 200 A
limited by TJmax
MARKING DIAGRAM
Diode forward current IF A
@ TC = 25°C 50
@ TC = 100°C 25
Diode pulsed current, Tpulse limited IFM 200 A
by TJmax

Gate−emitter voltage VGE $20 V 25N120IHL

AYWWG
Power Dissipation PD W
@ TC = 25°C 192
@ TC = 100°C 77
Operating junction temperature TJ −55 to +150 °C
range

Storage temperature range Tstg −55 to +150 °C

A = Assembly Location
Lead temperature for soldering, 1/8” TSLD 260 °C Y = Year
from case for 5 seconds WW = Work Week
Stresses exceeding Maximum Ratings may damage the device. Maximum G = Pb−Free Package
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device Package Shipping
NGTB25N120IHLWG TO−247 30 Units / Rail
(Pb−Free)

© Semiconductor Components Industries, LLC, 2012 1 Publication Order Number:

August, 2012 − Rev. 2 NGTB25N120IHLW/D
 NGTB25N120IHLWG

THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case, for IGBT RqJC 0.65 °C/W
Thermal resistance junction−to−case, for Diode RqJC 2.0 °C/W
Thermal resistance junction−to−ambient RqJA 40 °C/W

ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)

Parameter Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage, VGE = 0 V, IC = 500 mA V(BR)CES 1200 − − V
gate−emitter short−circuited

Collector−emitter saturation voltage VGE = 15 V, IC = 25 A VCEsat − 1.85 2.3 V

VGE = 15 V, IC = 25 A, TJ = 150°C − 2.1 −

Gate−emitter threshold voltage VGE = VCE, IC = 250 mA VGE(th) 4.5 5.5 6.5 V
Collector−emitter cut−off current, gate− VGE = 0 V, VCE = 1200 V ICES − − 0.5 mA
emitter short−circuited VGE = 0 V, VCE = 1200 V, TJ = 150°C − − 2.0

Gate leakage current, collector−emitter VGE = 20 V, VCE = 0 V IGES − − 100 nA

short−circuited

DYNAMIC CHARACTERISTIC
Input capacitance Cies − 4700 − pF
Output capacitance VCE = 20 V, VGE = 0 V, f = 1 MHz Coes − 155 −
Reverse transfer capacitance Cres − 100 −
Gate charge total Qg 200 nC
Gate to emitter charge VCE = 600 V, IC = 25 A, VGE = 15 V Qge 38
Gate to collector charge Qgc 100
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time TJ = 25°C td(off) 235 ns
Fall time VCC = 600 V, IC = 25 A tf 160
Rg = 10 W
Turn−off switching loss VGE = 0 V/ 15V Eoff 0.8 mJ
Turn−off delay time TJ = 125°C td(off) 250 ns
Fall time VCC = 600 V, IC = 25 A tf 225
Rg = 10 W
Turn−off switching loss VGE = 0 V/ 15V Eoff 1.9 mJ
DIODE CHARACTERISTIC
Forward voltage VGE = 0 V, IF = 25 A VF 1.7 1.8 V
VGE = 0 V, IF = 25 A, TJ = 150°C 1.8

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TYPICAL CHARACTERISTICS
120 120
VGE = 20 to 13 V VGE = 20 to 11 V
TJ = 25°C TJ = 150°C
IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

100 11 V 100
10 V
80 80

10 V
60 60
9V
9V
40 40
8V
20 20
8V
7V
7V
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 1. Output Characteristics Figure 2. Output Characteristics

120 120
VGE = 20 to 13 V

IC, COLLECTOR CURRENT (A)

IC, COLLECTOR CURRENT (A)

100 100
11 V

80 80
TJ = −40°C 10 V
60 60

40 40
9V TJ = 150°C
20 7V 20
TJ = 25°C
8V
0 0
0 1 2 3 4 5 0 5 10 15
VCE, COLLECTOR−EMITTER VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V)
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics

10,000 120
Cies
100
IF, FORWARD CURRENT (A)

TJ = 25°C TJ = 125°C
C, CAPACITANCE (pF)

1000 80

60

100 Coes 40

Cres 20

10 0
0 25 50 75 100 125 150 175 200 0 0.5 1.0 1.5 2.0 2.5 3.0
VCE, COLLECTOR−EMITTER VOLTAGE (V) VF, FORWARD VOLTAGE (V)
Figure 5. Typical Capacitance Figure 6. Diode Forward Characteristics

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TYPICAL CHARACTERISTICS

16 2.0

Eoff, TURN−OFF SWITCHING LOSS (mJ)

200 V VCE = 600 V
VGE, GATE−EMITTER VOLTAGE (V)

14 1.8
VGE = 15 V
400 V 600 V 1.6 IC = 25 A
12 Rg = 10 W
1.4
10
1.2
8 1.0

6 0.8
0.6
4
0.4
2
0.2
0 0
0 50 100 150 200 250 0 20 40 60 80 100 120 140 160
QG, GATE CHARGE (nC) TEMPERATURE (°C)
Figure 7. Typical Gate Charge Figure 8. Energy Loss vs. Temperature

1000 3.0

Eoff, TURN−OFF SWITCHING LOSS (mJ)

VCE = 600 V
td(off) VGE = 15 V
2.5
TJ = 150°C
SWITCHING TIME (ns)

Rg = 10 W
tf
100 2.0

1.5

10 1.0
VCE = 600 V
VGE = 15 V
IC = 25 A 0.5
Rg = 10 W
1 0
0 20 40 60 80 100 120 140 160 10 14 18 22 26 30 34 38 42
TEMPERATURE (°C) IC, COLLECTOR (A)
Figure 9. Switching Time vs. Temperature Figure 10. Energy Loss vs. IC

1000 3.0
Eoff, TURN−OFF SWITCHING LOSS (mJ)

tf
2.5
td(off)
SWITCHING TIME (ns)

100 2.0

1.5

10 1.0
VCE = 600 V VCE = 600 V
VGE = 15 V VGE = 15 V
TJ = 150°C 0.5
IC = 25 A
Rg = 10 W TJ = 150°C
1 0
10 14 18 22 26 30 34 38 42 5 15 25 35 45 55 65 75 85
IC, COLLECTOR (A) Rg, GATE RESISTOR (W)
Figure 11. Switching Time vs. IC Figure 12. Energy Loss vs. Rg

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TYPICAL CHARACTERISTICS
10,000 2.5

2.0
td(off)
SWITCHING TIME (ns)

1000

ENERGY (mJ)
1.5
tf

1.0
100
VGE = 15 V
VCE = 600 V
IC = 25 A
VGE = 15 V 0.5
Rg = 10 W
IC = 25 A
TJ = 150°C
TJ = 150°C
10 0
5 15 25 35 45 55 65 75 85 375 425 475 525 575 625 675 725 775
Rg, GATE RESISTOR (W) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 13. Switching Time vs. Rg Figure 14. Energy Loss vs. VCE

1000 1000
1 ms 50 ms

IC, COLLECTOR CURRENT (A)

td(off)
100
SWITCHING TIME (ns)

tf 100 ms
100
10 dc operation

1
10 Single Nonrepetitive
VGE = 15 V Pulse TC = 25°C
IC = 25 A 0.1 Curves must be derated
Rg = 10 W linearly with increase
TJ = 150°C in temperature
1 0.01
375 425 475 525 575 625 675 725 775 1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V) VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 15. Switching Time vs. VCE Figure 16. Safe Operating Area

1000
IC, COLLECTOR CURRENT (A)

100

10

VGE = 15 V, TC = 125°C
1
1 10 100 1000
VCE, COLLECTOR−EMITTER VOLTAGE (V)
Figure 17. Reverse Bias Safe Operating Area

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TYPICAL CHARACTERISTICS
1

50% Duty Cycle RqJC = 0.65

20%
0.1 10%
R(t) (°C/W)

Junction R1 R2 Rn Case Ri (°C/W) ti (sec)

5%
0.02659 1.0E−4
0.06231 1.76E−4
2% Ci = ti/Ri
0.10246 0.002
0.01 1% 0.2121 0.1
C1 C2 Cn 0.1057 2.0

Duty Factor = t1/t2

Single Pulse
Peak TJ = PDM x ZqJC + TC
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 18. IGBT Transient Thermal Impedance

10
RqJC = 2.0

50% Duty Cycle

1
20%
10%
R(t) (°C/W)

Junction R1 R2 Rn Case Ri (°C/W) ti (sec)

5% 0.25813 1.48E−4
0.1
0.57713 0.002
2% Ci = ti/Ri
0.67147 0.03
0.38693 0.1
1% C1 C2 Cn 0.1057 2.0
0.01
Single Pulse Duty Factor = t1/t2
Peak TJ = PDM x ZqJC + TC
0.001
0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
PULSE TIME (sec)
Figure 19. Diode Transient Thermal Impedance

Figure 20. Test Circuit for Switching Characteristics

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Figure 21. Definition of Turn On Waveform

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Figure 22. Definition of Turn Off Waveform

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PACKAGE DIMENSIONS

TO−247
CASE 340L−02
ISSUE F

−T− NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
−B− 2. CONTROLLING DIMENSION: MILLIMETER.
E
MILLIMETERS INCHES
U L
DIM MIN MAX MIN MAX
A 20.32 21.08 0.800 8.30
N B 15.75 16.26 0.620 0.640
4
C 4.70 5.30 0.185 0.209
A D 1.00 1.40 0.040 0.055
−Q− E 1.90 2.60 0.075 0.102
1 2 3 0.63 (0.025) M T B M F 1.65 2.13 0.065 0.084
G 5.45 BSC 0.215 BSC
H 1.50 2.49 0.059 0.098
P J 0.40 0.80 0.016 0.031
−Y− K 19.81 20.83 0.780 0.820
L 5.40 6.20 0.212 0.244
K N 4.32 5.49 0.170 0.216
P --- 4.50 --- 0.177
Q 3.55 3.65 0.140 0.144
U 6.15 BSC 0.242 BSC
W 2.87 3.12 0.113 0.123
W J STYLE 4:
F 2 PL H PIN 1. GATE
G 2. COLLECTOR
3. EMITTER
D 3 PL 4. COLLECTOR
0.25 (0.010) M Y Q S

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