Semiconductors Diode

Lecture - 2
Jayant Nagda
Physics Educator

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P-N junction Diode

When a P-type semiconductor is suitably joined

to an N-type semiconductor, then resulting arrangemen
is called P-N junction or P-N junction diode
P-N junction Diode

electrons from N-region diffuse through the junction into

P-region and the hole from P region diffuse into N-region
Depletion Region
Example MCQ type Question [ +4 , -1]

In p-n junction what is the direction

of internal electric field -

A. From p to n

B. From n to p

C. Perpendicular to the p-n junction

D. There is no electric field

Potential Barrier

The potential difference created across the P-N junction due to

the diffusion of electron and holes is called potential barrier.

For Ge VB = 0.3 V and

for silicon VB= 0.7 V

On the average the potential barrier in P-N junction

is ~ 0.5 V and the width of depletion region ~ 10–6.

So the Barrier Electric Field,

Example MCQ type Question [ +4 , -1]

A potential barrier of 0.50V exists across a P-N junction.

If the depletion region is 5.0 x 10-7 m wide,
the intensity of the electric field in this region is

A. 1.0 x 106 V/m

B. 1.0 x 105 V/m

C. 2.0 x 105 V/m

D. 2.0 x 106 V/m

important graphs Charge Density

P N

+ve
-ve

Distance
important graphs

Charge Density Electric field Potential

P N N P N
P
+ve
-ve

Distance Distance Distance

 Diffusion Current

Due to difference in concentration of charge carriers,

m hole / electron start diffusing from their side to other side
,

Only those holes / electrons cross the junction which

have high kinetic energy.

This diffusion results is an electric current from the P-

side to the N-side known as diffusion current idiffusion
Drift Current
thermal energy, collisions, covalent bonds break,
electron-hole pair created

they are sent to their regions by the electric field

This makes a current from the N-side to the P-side.

This current is called the drift current idrift

Diffusion & Drift Current

Thus drift current and the diffusion current

are in opposite directions.

Note :
1. In steady state idissusion = idrift so inet = 0
2. When no external source is connected,
diode is called unbiased.
 Biasing

Means the way of connecting emf source to P-N junction diode

Forward biasing Reverse biasing

Positive terminal of the battery is Positive terminal of the battery is connected

connected to the P-crystal and negative to the N-crystal and negative terminal of the
terminal of the battery is connected to N- battery is connected to P-crystal
crystal
Example MCQ type Question [ +4 , -1]

The forward biased diode connection is:

[JEE Main 2014]

+2V -2V
A.
-3V -3V
B.
+2V +4V
C.

-2V +2V
D.
 Forward biasing Reverse biasing

RForward » 10Ω - 25Ω RReverse » 105Ω

Forward bias opposes the potential Reverse bias supports the potential
barrier and for V > VB a forward barrier and no current flows across
current is set up across the junction. the junction due to the diffusion of
the majority carriers.

(A very small reverse currents may

exist)

Width of depletion layer decreases. Width of depletion layer increases

Example MCQ type Question [ +4 , -1]

The ratio of resistance for forward to reverse bias

of P-N junction diode is -

A. 102 : 1 B. 10–2 : 1
C. 1 : 10–4 D. 1 : 104
 Forward biasing Reverse biasing

Cut-in (Knee) voltage : The voltage at Break down voltage : Reverse voltage at which
which the current starts to increase. break down of semiconductor occurs. For Ge it
For Ge it is 0.3 V and for Si it is 0.7 V. is 25 V and for Si it is 35 V.
 Reverse Breakdown And Special Purpose Diodes

1. Zener breakdown

When reverse bias is increased

the electric field at the junction also increases.
At some stage the electric field becomes so high
that it breaks the covalent bonds
creating electron, hole pairs.

Thus a large number of carriers are generated.

This causes a large current to flow.
This mechanism is known as Zener breakdown.
Reverse Breakdown And Special Purpose Diodes

2. Avalanche breakdown
At high reverse voltage, due to high electric field,
the minority charge carriers, while crossing
the junction acquires very high velocities.

These by collision breaks down the

covalent bonds, generating more carriers.
A chain reaction is established,
giving rise to high current.

This mechanism is called avalanche breakdown.

Zener Diode It is the highly doped diode in which
reverse current increases very sharply.

It can operate continuously

without damaging the junction.
The symbol of zener diode is

1. A zener diode is like

an ordinary diode except
that it is heavily doped so
as to have a sharp breakdown
voltage called zener voltage.

2. Zener diode is always used in reverse bias.

3. It is used for voltage stabilisation.
Light Emitting Diode

When a conduction electron falls into a hole in valence band,

the energy may be emitted as a photon.

For usual diodes the wavelength of photon emitted

lies in infrared region.

If the wavelength of the photons is

in visible range (4000 Å to 7000 Å),
the emitted photon will cause visual effect.

Such a diode is known as light emitting diode and abbreviated as LED.

The LEDs are usually made from gallium arsenide (GaAs) or indium
phosphide. LED's are used in electronic gadgets and indicator lights.
Photo Diode

Photodiode is a diode whose

function is controlled by the light falling on it.

Light of wavelength λ is sufficient to break the valence bond falls

on the junction, new hole-electron pairs are created.

Circuit current can be controlled by incident light.

Half Wave Rectifier

Input ac RL Output DC
Full Wave Rectifier

D1

Input RL
AC
O/P (DC)

D2
Bridge Rectifier
Bridge Rectifier
Daily Practice Problems
Example MCQ type Question [ +4 , -1]

For making p-n junction diode in forward biased -

A. same potential is applied

B. greater potential is given to n compared to p
C. greater potential is given to p compared to n
D. unbalanced concentration

Ans: C
Example MCQ type Question [ +4 , -1]

In the middle of the depletion layer of a

reverse-biased p-n junction, the

A. Electric field is zero

B. Potential is maximum
C. Electric field is maximum
D. Potential is zero

Ans: A
Example MCQ type Question [ +4 , -1]

When p-n junction diode is forward biased then

A. Both the depletion region and barrier height is reduced

B. The depletion region is widened and barrier height is reduced
C. The depletion region is reduced and barrier height is increased
D. Both the depletion region and barrier height are increased

Ans: A
Example MCQ type Question [ +4 , -1]

In the following, which one of diodes reverse biased?

AIEEE [2006]
+10V
A. B.
R -10V
-5V R
+5 V
+5V
C. D. R
R

-10V

Ans: D
Example MCQ type Question [ +4 , -1]

Current in the circuit will be

A.

B.

C.

D.

Ans: B
Example MCQ type Question [ +4 , -1]

A 2V battery is connected across the points A and B as shown

in the figure given below. Assuming that the resistance of each
diode is zero in forward bias and infinity in reverse bias, the
current supplied by the battery when its positive terminal is
connected to A is

A. 0.2 A

B. 0.4 A

C. Zero

D. 0.1 A
Ans: A
Example MCQ type Question [ +4 , -1]

The circuit has two positively connected ideal diodes in

parallel. What is the current flowing in the circuit?
AIEEE [2006]
4Ω
D1 D2

2Ω
12V
3Ω

A. 1.71 A B. 2.00 A

C. 2.31 A D. 1.33 A
Ans: B
Example MCQ type Question [ +4 , -1]

Radiation of wavelength λ, is incident on a photocell. The

fastest emitted electron has speed v. if the wavelength is
changed to 3λ/4, the speed of the fastest emitted electron
Will be :
[JEE Main 2016]

A. B.

C. D.

Ans: C
Example MCQ type Question [ +4 , -1]

A p-n junction (D) shown in the figure can act as a rectifier.

An alternating current source (J) is connected in the circuit.

Current I in the resistance R will be:

A. B. C. D.

Ans: B
Example MCQ type Question [ +4 , -1]

From the circuit shown below, the maximum and minimum

values of zener diode current are

IL
5KΩ
D1
80-120V 10Ω

A. 6mA, 5mA B. 14mA, 5mA

C. 9mA, 1mA D. 3mA, 2mA

Ans: C
Example MCQ type Question [ +4 , -1]

In a full wave rectifier circuit operating from 50 Hz mains

frequency, the fundamental frequency in the ripple (output)
would be

A. 25 Hz B. 50 Hz

C. 70.7 Hz D. 100 Hz

Ans: D
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