Basic Science - Physics MCQ of Semiconductors

Basic Science Physics

Unit II: Semiconductors
MCQ
1) The substances which conducts electricity are called _____
a) Conductors b) insulators c) semiconductors d) bad conductors
2) The electrical conductivity of conductors is
a) Low b) high c) zero d) infinity
3) The substances which does not conducts electricity are called ______
a) Conductors b) insulators c) semiconductors d) good conductors
4) The electrical conductivity of an insulators is ______
a) Low b) high c) zero d) infinity
5) The substances whose conductivity lies between conductivity of conductors and insulators are called
a) Conductors b) insulators c) semiconductors d) good conductors
6) The electrical conductivity of semiconductors is depends on ______
a) Temperature b) length c) area d) volume
7) Which of the following is semiconductor
a) Steel b) Silicon c) germanium d) both b and c
8) The energy level of all electrons in a particular orbit of an atom is called ______
a) Super band b) lower band c) energy band d) level band
9) The band energy occupied by the valence electrons is called _____
a) Valence band b) conduction band c) forbidden band c) all of above
10) The band energy occupied by the free electrons or conduction electrons are called
a) Valence band b) conduction band c) forbidden band c) all of above
11) The gap between valence band and conduction band is called
a) Forbidden energy gap b) breakdown gap c) both a and b d) valence gap
12) The valence band and conduction band overlap each other in ______
a) Conductors b) insulators c) semiconductors d) all of above
13) The valence band is completely filled with electrons in _____
a) Conductors b) insulators c) semiconductors d) all of above
14) Forbidden energy gap is large in ____
a) Conductors b) insulators c) semiconductors d) all of above
15) In which substance electrons are not available for conduction?
a) Conductors b) insulators c) semiconductors d) all of above
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Basic Science - Physics MCQ of Semiconductors
16) The energy gap in silicon is _____
a) 0.7 eV b) 1.1 eV c) 1.9 eV d) 0.3 eV
17) The energy gap in Ge is _____
a) 1.1 eV b) 0.7 eV c) 1.9 eV d) 0.3 eV
18) In conductors the temperature increases, the conductivity _____
a) Increases b) decreases c) zero d) infinity
19) As temperature increases, the conductivity of insulators _____
a) Increases b) decreases c) zero d) infinity
20) Current flows due to free electrons in ________
a) Conductors b) insulators c) semiconductors d) both a and b
21) In _______, current flows due to free electrons and holes
a) Conductors b) insulators c) semiconductors d) all of above
22) A pure semiconductors are called _______
a) Extrinsic b) intrinsic c) pentavalent d) trivalent
23) In intrinsic semiconductors _____
a) ne = nh b) ne > nh c) ne = nh d) ne < nh
24) In extrinsic semiconductors, ______
a) ne = nh b) ne ≠ nh c) zero d) none of above
25) N-type and P-type semiconductors are the types of ________
a) Intrinsic semiconductors b) extrinsic semiconductors c) pure semiconductors d) all of above
26) In N-type semiconductor _______
a) ne = nh b) ne > nh c) ne = nh d) ne < nh
27) In P-type semiconductors, ________
a) ne = nh b) ne > nh c) ne = nh d) ne < nh
28) when pentavalent impurities are doped in a pure semiconductor, semiconductor is formed _____
a) P-type b) N-type c) both a and b c) pure
29) _________ impurities are formed P-type semiconductors.
a) Trivalent b) pentavalent c) N-type d) all of above
30) The process of adding an impurities into pure semiconductor is called _______
a) Doping b) impurities c) conduction d) resistance
31) At absolute zero temperature, intrinsic semiconductor acts as _______
a) Conductors b) insulators c) semiconductors d) all of above
32) If temperature of pure semiconductors increases, resistivity _______
a) Increases b) decreases c) zero d) infinity

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Basic Science - Physics MCQ of Semiconductors
33) The current in intrinsic semiconductor is _____ and in extrinsic semiconductor is _______
a) Large, small b) small, large c) same d) both a and b
34) Which of the following is trivalent impurity
a) Arsenic b) antimony c) indium d) Phosphorus
35) Find trivalent impurity of the following
a) Indium b) Boron c) Gallium and aluminium d) all of the above
36) The pentavalent impurities are _______
a) Arsenic b) antimony c) Phosphorus d) all of the above
37) Pure semiconductor + trivalent impurities = ______ semiconductor
a) N-type b) P-type c) intrinsic d) none of the above
38) Pure semiconductor + pentavalent impurities = ______ semiconductor
a) N-type b) P-type c) intrinsic d) none of the above
39) Ge + As = __________ and Ge + In = ________
a) N-type, P-type b) P-type, N-type c) both N-type d) Both P-type
40) ________ impurities forms a N-type semiconductors
a) Donor b) Acceptor c) Pure d) both and b
41) Acceptor impurities forms ________ semiconductor
a) P-type b) N-type c) both a and b d) none of above
42) In which semiconductor, electrons are majority and holes are minority carriers
a) N-type b) P-type c) intrinsic d) pure
43) The holes are majority carriers and electrons are minority charge carriers in ____ semiconductor
a) N-type b) P-type c) intrinsic d) pure
44) In P-type semiconductors, doping increases number of _____
a) Holes b) electrons c) neutrons d) both a and b
45) In N-type semiconductors, doping increases number of _____
a) Holes b) electrons c) neutrons d) both a and b
46) The doped semiconductor is called ______
a) Intrinsic semiconductors b) extrinsic semiconductors c) pure semiconductors d) all of above
47) The impurity which donate electrons when doped into pure semiconductor is called ____
a) Donor impurity b) acceptor impurity c) constant impurity d) all of the above
48) The impurity which accept electrons when doped into pure semiconductor is called ____
a) Donor impurity b) acceptor impurity c) constant impurity d) all of the above
49) Bismuth is _____
a) Donor impurity b) acceptor impurity c) constant impurity d) all of the above

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Basic Science - Physics MCQ of Semiconductors
50) The conductivity of extrinsic semiconductor is depends upon ____
a) Temperature b) impurity c) pressure d) both a and b
51) At absolute temperature, extrinsic semiconductor acts as _______
a) Insulator b) conductor c) bad conductor d) both a and b
52) When half part of a Si crystal is doped with trivalent and half is doped with pentavalent, ___ is formed
a) p-n junction diode b) triode c) conductor d) semiconductor
53) In p-n junction diode, the border where p-region meets with n-region is called ____
a) Barrier b) junction c) potential d) depletion
54) The region near the junction is depleted of free charges called ____
a) Junction b) depletion layer c) border d) both a and c
55) The potential difference developed across the p-n junction diode is called ____
a) Current potential b) barrier potential c) resistance d) knee voltage
56) The barriers potential across the junction opposes ____
a) Depletion b) concentration c) diffusion d) both a and c
57) The barrier potential across the p-n junction diode of Si and Ge are _____
a) 0.7 V, 1.2 V b) 1.2 V, 0.7 V c) 0.7 V , 0.3 V d) 0.3 V, 0.7 V
58) When the positive terminal of battery is connected to p-side and negative terminal of battery is
connected to n-side then the diode is said to be ______
a) Reverse bias b) forward bias c) no biased d) both a and b
59) When the positive terminal of battery is connected to n-side and negative terminal of battery is
connected to p-side then the diode is said to be ______
a) Reverse bias b) forward bias c) no biased d) both a and b
60) In forward bias p-n junction diode, if applied potential increases, the width of barrier potential ___
a) Increases b) decreases c) same d) both a and b
61) In forward bias p-n junction diode, if applied potential increases, the width of barrier potential and
width of depletion layer ___
b) Increases b) decreases c) same d) both a and b
62) The forward bias acts as _____
a) Open switch b) connection switch c) closed switch d) none of the above
63) In reverse bias, the applied potential increase, the electron and holes are move _____
a) Towards junction b) away from junction c) across the junction d) none of these
64) In reverse bias p-n junction diode, if applied potential increases, the width of barrier potential ___
a) Increases b) decreases c) same d) both a and b

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Basic Science - Physics MCQ of Semiconductors
65) In reverse bias p-n junction diode, if applied potential increases, the width of barrier potential and
width of depletion layer ____
a) Increases b) decreases c) same d) both a and b
66) The reverse voltage at which the diode breakdown occurs is called ____
a) Forward voltage b) breakdown voltage c) barrier voltage d) all of the above
67) The potential difference across the depletion region is called _____
a) Breakdown voltage b) forward voltage c) barrier voltage d) applied voltage
68) The value of forward voltage above which forward current increases rapidly is called ____
a) Applied voltage b) knee voltage c) barriers potential d) both a) and b)
69) When diode is reverse bias, a very small current flows through it called _____
a) Forward saturation current b) reverse saturation current c) constant saturation current d) all
70) The p-n junction diode is used in _____
a) Detector circuit b) rectifier c) voltage regulator d) all of above
71) The p-n junction died is used in ____
a) Demodulator circuits b) switch c) clipping circuits for wave shaping d) all
72) Which of the following is semiconductor material
a) Si b) Ge c) GaAs d) all of above
73) When junction diode is reverse biased then diode acts like _____
a) Short switch b) close switch c) an open switch d) all of the above
74) What is the charge of mobile charge carrier of holes?
a) Negatively charged b) no charged c) positively Charged d) none of these
75) When junction diode is forward biased, the thickness of the depletion region _____
a) Larger b) smaller c) medium d) not determine
76) Which are the mobile charge carriers present in semiconductor diode?
a) Holes b) electrons c) neutrons d) both a and b
77) What is the majority carriers in N-type semiconductors
a) Protons b) Holes c) Electrons d) none of the above

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