SECOND SEMISTER FIRST ROUND PHYSICS PRACTICING QUESTIONS FOR GRADE 12

STUDENTS AT ODA SBS IN 2016/2024.

Unit-5: Introduction to Electronics

Intrinsic and Extrinsic Semiconductors, Diodes, BPJ Transistors and The
Application of Electronics
1. Which of the following statements are true about semiconductors ? conductivity
A. Silicon doped with electron rich impurity is a p-type semiconductor
B. Silicon doped with an electron rich impurity is an n-type semiconductor
C. Delocalised electrons increase the conductivity of doped silicon
D. An electron vacancy increases the conductivity of n-type semiconductor
2. In a semiconductor crystal, the atoms are held together by
A. the interaction of valence electrons C. covalent bonds
B. forces of attraction D. All
3. The conductivity of a semiconductor increases with increase in temperature because
A. number density of free current carriers increases
B. relaxation time increases
C. both number density of carriers and relaxation time increase
D. number density of carriers increases, relaxation is time decreases but effect of decreases in relaxation
time is much less than increase in number density
4. Each atom in a silicon crystal has
A. four valence electrons C. eight valence electrons, four of its own and four shared
B. four conduction electrons D. no valence electrons because all are shared with other atoms
5. When an electrical conductivity of semiconductor is due to the breaking of its covalent bands, then the
semiconductor is said to be
A. Acceptor B. donor C. intrinsic D. extrinsic
6. Doping of a semiconductor (with small traces of impurity atoms) generally changes the resistivity as
follows
A. does not alter C. increases
B. decreases D. may increase or decrease depending on the dopant
7. A trivalent impurity is added to silicon to create
A. germanium B. a p-type semiconductor C. an n-type semiconductor D. a depletion region
8. The purpose of a pentavalent impurity is to
A. reduce the conductivity of silicon C. increase the number of free electrons
B. increase the number of holes D. create minority carriers
9. Electrical conductivity of a semiconductor
A. increases with the rise in its temperature C. decrease does not change with the rise in its temperature
B. decrease with the rise in its temperature D. first increase and then decreases with the rise in its temperature
10. The current in a semiconductor is produced by:
A. electrons only B. holes only C. negative ions D. both electrons and holes

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
11. In an intrinsic semiconductor,
A. there are no free electrons C. there are only holes
B. the free electrons are thermally produced D. there are as many electrons as there are holes (e)
answers (b) and (d)
12. A p-type semiconductor has impurity atoms with valence electrons. A. 3 B. 5 C. 0 D. 1
13. A trivalent impurity is added to silicon to create (a) germanium (b) a p-type semiconductor (c) an n-type
semiconductor (d) a depletion region
14. An n-type and a p-type silicon semiconductor can be obtained by doping pure silicon with
A. sodium and magnesium C. boron and phosphorus respectively
B. phosphorus and boron respectively D. indium and sodium respectively
15. The impurity atoms with which pure silicon may be doped to make it a p-type semiconductor are those of
A. phosphorus B. boron C. antimony D. nitrogen
16. When an impurity is doped into an intrinsic semiconductor, the conductivity of the semiconductor
A. increases B. decreases C. remains the same D. becomes zero
17. The purpose of a pentavalent impurity is to (a) reduce the conductivity of silicon (b) increase the number
of holes (c) increase the number of free electrons d) create minority carriers
18. _______ is an example of an element with five valence electrons.
A. Arsenic B. Boron C. Gallium D. Silicon
19. Hole is
A. an anti-particle of electron C. absence of free electrons
B. a vacancy created when an electron leaves a covalent bond D. an artificially created particle
20. Holes in an n-type semiconductor are
A. minority carriers that are thermally produced C. majority carriers that are thermally produced
B. minority carriers that are produced by doping D. majority carriers that are produced by doping
21. Which statement is correct?
A. N-type germanium is negatively charged and P-type germanium is positively charged
B. Both N-type and P-type germanium are neutral
C. N-type germanium is positively charged and P-type germanium is negatively charged
D. Both N-type and P-type germanium are negatively charged
22. Electronic configuration of germanium is 2, 8, 18 and 4, To make it extrinsic semiconductor small quantity
of antimony is added
A. The material obtained will be N-type germanium in which electrons and holes are equal in number
B. The material obtained will be P-type germanium
C. The material obtained will be N-type germanium which has more electrons than holes at room
temperature
D. The material obtained will be N-type germanium which has less
23. Choose the correct statement
A. When we heat a semiconductor its resistance increases
B. When we heat a semiconductor its resistance decreases
C. When we cool a semiconductor to 0 K then it becomes super conductor
D. Resistance of a semiconductor is independent of temperature
24. In p -type semiconductors, conduction is due to
A. greater number of holes and less number of electrons C. only holes
B. greater number of electrons and less number of holes D. only electrons

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
 25. In an n-type silicon, which of the following statements is true?
A. Electrons are majority carriers and trivalent atoms are the dopants
B. Electrons are minority carriers and pentavalent atoms are the dopants
C. Holes are minority carriers and pentavalent atoms are the dopants
D. Holes are majority carriers and trivalent atoms are the dopants
26. Valence electrons are
A. in the closet orbit to the nucleus C. in the most distant orbit from the nucleus
B. in various orbits around the nucleus D. D.not associated with a particular atom
27. A positive ion is formed when
A. there are more holes than electrons in the C. a valence electron breaks away from the atom
outer orbit D. an atom gains extra valenceelectron
B. two atoms bond together
28. The most widely used semi conductive material in electronic device is
A. silicon B. carbon C. germanium D. copper
29. The energy band in which free electrons exist is the
A. first band B. conduction band C. second band D. valence band
30. Electron-holes pairs are produced by
A. ionization B. thermal energy C. recombination D. doping
31. Recombination is when
A. a crystal is formed C. an electron falls into a hole
B. a positive and a negative ion bond together D. a valence electron becomes a conduction electron
32. In a semiconductor crystal, the atoms are held together by
A. forces of attraction C. covalent bonds
B. the interaction of valence electrons D. answer a, b, c
33. Each atom in a silicon crystal has
A. no valence electrons because all are shared with others atoms
B. eight valence electrons because all are with other atoms
C. four valence electrons
D. four conduction electrons
34. The current in a semiconductor is produced by
A. holes only B. electrons only C. both electrons and holes D. negative ions
35. In an intrinsic semiconductor
A. there are no free electrons D. there are as many electrons as there are holes
B. the free electrons are thermally produced E. answer b and d
C. there are only holes
36. The difference between an insulator and a semiconductor is
A. a wider energy gap between the valence band and the conduction band
B. the number of free electrons C. the atomic structure D. answers a, b and c
37. The process of adding an impurity to an intrinsic semiconductor is called
A. atomic modification B. doping C. recombination D. ionization
38. A trivalent impurity is added to silicon to create
A. germanium B. an n-type semiconductor C. a depletion region D. a p-type semiconductor
39. The purpose of a pentavalent impurity is to
A. increase the number of free electrons D. increase the number of holes
B. create minority carriers
C. reduce the conductivity of silicon
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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
40. The majority carriers in an n-type semiconductor are
A. holes B. conduction electrons C. valence electron D. protons
41. A p-n junction is formed by
A. ionization C. the recombination of electrons and holes
B. the boundary of a p-type and an n-type D. the collision of a proton and a neutron
material
42. The reverse biasing in a PN junction diode
A. decreases the potential barrier
B. increases the potential barrier
C. increases the number of minority charge carriers
D. increases the number of majority charge carriers
43. The dominant mechanisms for motion of charge carriers in forward and reverse biased silicon P-N junctions are
A. Drift in forward bias, diffusion in reverse bias C. Diffusion in forward bias, drift in reverse bias
B. Diffusion in both forward and reverse bias D. Drift in both forward and reverse bias
44. In a p-n junction diode
A. the current in the reverse biased condition is generally very small
B. the current in the reverse biased condition is small but the forward biased current is independent of the bias
voltage
C. the reverse biased current is strongly dependent on the applied bias voltage
D. the forward biased current is very small in small in comparison to reverse biased current
45. p-n junction is said to be forward biased, when
A. the positive pole of the battery is joined to the n-semiconductor
B. the positive pole of the battery is joined to the n-semiconductor and p-semiconductor
C. the positive pole of the battery is connected to n-semiconductor and p-semiconductor
D. a mechanical force is applied in the forward direction
46. In p -n junction, the barrier potential offers resistance to
A. free electrons in n-region and holes in p-region C. only free electrons in n-region
B. free electrons in p-region and holes in n-region D. only holes in p-region
47. In an unbiased p-n junction, holes diffuse from the p
A. free electrons in the n-region attract them.
B. they move across the junction by the potential difference.
C. Hole concentration in p-region is more as compared to n
D. All the above
48. The depletion region is created by
A. ionization B. diffusion C. recombination D. answer a, b and c
49. The depletion region is consist of
A. nothing but minority carriers B. positive and negative ions C. no majority carriers D. answer B and C
50. The barrier potential of a p-n junction depends on:
A. type of semi conductor material
B. amount of doping
C. temperature
51. The term bias means
A. a DC voltage is applied to control the operation of a device
B. the ratio of majority carriers to minority carriers
C. the amount of current across a diode D. neither a, b nor c

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
52. To forward -bias a diode
A. an external voltage is applied that is positive at the anode and negative at the cathode
B. an external voltage applied that is negative at the anode and positive at the cathode
C. an external voltage is applied that is positive at the p region and negative at the n region
D. answer a and c
53. When diode is forward-biased
A. the only current is hole current C. the only current is produced by majority carriers
B. the current is produced by both holes and electrons D. the only current is electron current
54. Although current is blocked in reverse bias
A. there is some current due to majority carriers
B. there is very small current due to minority carriers
C. there is an avalanche current
55. For a silicon diode, the value of the forward-bias voltage typically
A. must be greater than 0.3V C. depends on the concentration of majority carriers
B. depends on the width of the depletion region D. must be greater than 0.7 V
56. When forward-biased, a diode
A. block current B. has a high resistance C. conducts current D. drops a large voltage
57. A semiconductor device is connected in a series circuit with a battery and a resistance. A current is found to pass
through the circuit. If the polarity of the battery is reversed, the current drops almost to zero. The device may be
A. a p-type semiconductor C. a p-n junction
B. an n-type semiconductor D. an intrinsic semiconductor
58. A full wave rectifier circuit along with the input and output are shown in the figure, the contribution from the
diode I is (are)

A. C B. A, C C. B, D D. A, B, C, D
59. An LED
A. emits light when forward-biased C. acts as a variable resistance
B. emits light when reverse-biased D. senses light when reverse-biased
60. When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to
A. the diode barrier potential B. the bias battery voltage C. the total circuit voltage D. 0V
61. The positive lead of an ohmmeter is connected to the anode of a diode and the negative lead is
connected to the cathode. The diode is
A. reverse-biased B. forward-biased C. open D. faulty E. answers b and d

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
62. A transistor has ........
A. one pn junction B. two pn junctions C. three pn junctions D. four pn junctions
63. The transistor are usually made of
A. metal oxides with high temperature coefficient of resistivity
B. metals with high temperature coefficient of resistivity
C. metals with low temperature coefficient of resistivity
D. semiconducting materials having low temperature coefficient of resistivity
64. A transistor has three impurity regions. All the three regions have different doping levels. In order of increasing
doping level, the regions are
A. emitter, base and collector C. base, emitter and collector
B. collector, base and emitter D. base, collector and emitter
65. In a pnp transistor, the current carriers are........
A. acceptor ions B. donor ions C. free electrons D. holes
66. A NPN transistor conducts when
A. both collector and emitter are positive with respect to the base
B. collector is positive and emitter is negative with respect to the base
C. collector is positive and emitter is at same potential as the base
D. both collector and emitter are negative with respect to the base
67. In case of n-p-n-transistors the collector current is always less than the emitter current because
A. collector side is reverse biased and emitter side is forward biased
B. after electrons are lost in the base and only remaining ones reach the collector
C. collector side is forward biased and emitter side is reverse biased
D. collector being reverse biased attracts less electrons
68. For operation as an amplifier, the base of a npn transistor must be
A. 0 V
B. negative with respect to the emitter
C. positive with respect to the collector
D. positive with respect to the emitter
69. In an npn BJT, one of the following statements is correct:
A. The base is moderately doped and thick. C. The emitter region is heavily doped.
B. The base is lightly doped and very thick. D. The collector region is heavily doped.
69. The emitter current is always
A. greater than the base current C. greater than the collector current
B. less than the collector current D. answer a and c
70. For transistor action, which of the following statements are correct?
A. Base, emitter and collector regions should have similar size and doping concentrations
B. The base region must be very thin and lightly doped
C. The emitter junction is forward biased and collector junction is reverse biased
D. Both the emitter junction as well as the collector junction are forward biased
71. A transistor is used in common emitter mode as an amplifier, then
A. the base emitter junction is forward biased
B. the base emitter junction is reversed biased
C. the input signal is connected in series with the voltage applied to the base emitter junction
D. the input signal is connected in series with the voltage applied to bias the base collector junction

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
72. In n-p-n transistor, in CE configuration, identify true statements from the following :
(a) The emitter is heavily doped than the collector (b) Emitter and collector can be interchanged
(c) The base region is very thin but is heavily doped (d) The conventional current flows from base to emitter
A. a and d are correct C. b and c are correct
B. a and b are correct D. c and d are correct
73. When npn transistor is used as an amplifier
A. electrons move from collector to base C. electrons move from base to collector
B. holes move from emitter to base D. holes move from base to emitter
74. To use a transistor as an amplifier, emitter-base junction is kept in ...X... and base-collector junction is kept in
...Y...Here, X and Y refer to
A. forward bias, forward bias C. reverse bias, forward bias
B. reverse bias, reverse bias D. forward bias, reverse bias
75. A transistor is used in common emitter mode as an amplifier, then
A. the base emitter junction is forward biased
B. the base emitter junction is reversed biased
C. the input signal is connected in series with the voltage applied to the base emitter junction
D. the input signal is connected in series with the voltage applied to bias the base collector junction
76. Current gain in common emitter configuration is more than 1 because
B. IC > IB B. I𝐶 < I𝐵 C. I𝐶 > I𝐸 D. I𝐶 < I𝐸
77. In a common base mode of transistor, the collector current is 5.488 mA for an emitter current of 5.60 mA. The
value of the base current amplification factor (β) will be
A. B. C. D.
78. In a transistor if β= 100 and collector cur-rent is 10 mA, then I𝐸 is ........
A. 100 mA B. 100.1 mA C. 110 mA D. 10mA
79. The circuit symbol shown below are BJT transistors. Which of the following is the correct name the transistors and name of
their junctions a), b), c) , d) and f respectively.

80. In saturation, what statement correctly describes the operation of a BJT transistor? Select one:
A. No current flows through the transistor.
B. There is a nonlinear relationship between collector current and base current.
C. There is a linear relationship between collector and base current.
D. There is an inverted but linear relationship between collector and base current.
81. Which of the following states of operation is it best to bias a BJT transistor in a single transistor amplifier circuit?
Select one:
A. Cut-off B. Reverse Active C. Forward Active D. Saturation
82. The arrow in the symbol of a transistor indi-cates the direction of .........
A. electron current in the emitter C. electron current in the collector
B. hole current in the emitter D. donor ion current

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
83. An NPN transistor circuit is arranged as shown in figure. It is action

A. a common base amplifier circuit

B. a common emitter amplifier circuit
C. a common collector circuit

84. In an p-n-p transistor working as a common base amplifier current gain is 0.96 and emitter current is 7.2 mA. The
base current is
A. 0.2 mA B. 0.29 mA C. 0.35 mA D. 0.4 mA
85. The following truth table corresponds to the logic gate
A 0 0 1 1
B 0 1 0 1
X 0 1 1 1
a) NAND (b) OR (c) AND (d) XOR
86. Correct statement for ‘NOR’ gate is that, it gives
A. high output when both the inputs are low C. low output when both the inputs are low
B. high output when both the inputs are high D. None of these
87. To get an output 1 from the circuit shown in the figure, the input can be

A. A = 0, B =1, C = 0 (C) A =1, B = 0, C = 0

B. A =1, B = 0, C =1 (D) A =1, B =1, C = 0

88. Given below are symbols for some logic gates. The XOR gate and NOR gate respectively are

A. 1 and 2 (B) 2 and 3 (C) 3 and 4 (D) 1 and 4

89. A system of logic gates is shown in the figure. From the study of truth table it can be found that no produce a high
output (1) at R, we must have

A) X = 0, Y = 1 B) X = 1, Y = 1 C) X = 1, Y = 0 D) X = 0, Y = 0

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024
90. In the given figure, which of the diodes are forward biased?

A. 1,2,3 B. 2,4,5 C. 1,3,4 D. 2,3,4

91. For the transistor circuit shown in figure, if β=100, voltage drop across emitter and base is 0.7 V, then the value
of VCE will be :

92. In the combination of the following gates the output Y can be written in terms of inputs A and B as

A. B. C. D.
93. Truth table for system of four NAND gates as shown in figure is

A. B. C. D.

94. The correct option for getting x=1 from the logic circuit shown below is:

A. B. C. D.

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Physics PQ for G 12 students at ODA SBS FEBRUARY 2024