Quiz 1

Name: sec:
The High Institute of Engineering Shorouk City Semester Academic Year 2019/2020
Course Name: Electronics Time Allowed: 30 Minutes
Date of Exam: 28/10/2019 Level: 2nd Year
Answer the following
Q1 Marks( 10)
1. In a PN junction with no external voltage, the electric field between acceptor and donor ions is
called a
A. Peak B. Barrier
B. Threshold D. Path
2. An atom consist of
A. one nucleus and only one electron B. one nucleus and one or more electrons
C. protons, electrons, and neutrons D. answer b or c
3- The current in a semiconductor is produced by

A. holes only B. electrons only
C. both electrons and holes D. negative ions
4- The energy band in which free electrons exist is the

A. first band B. conduction band
C. second band D. valence band
5- A reverse-biased PN junctions has

A.A net electron current B.A net hole current
C.A very narrow depletion layer D.Almost zero current
6-. A PN junction is said to be reversed biased when
A. Positive terminal of the battery is connected to P-side and the negative side to the N-side
B. Junction is earthed
C. N-side is connected directly to the p-side
D. Positive terminal of the battery is connected to N-side and the negative side to the P-side
7-. Electron-holes pairs are produced by

A. ionization B. thermal energy
C. recombination D. doping
8- A semiconductor is formed by ……… bonds.

A. Covalent B. Electrovalent
C. Co-ordinate D. None of the above
9- For a PN junction diode, the current in reverse bias may be
A. Few miliamperes B. Between 0.2 A and 15 A
C. Few amperes D. Few micro or Nano amperes
10- The purpose of a pentavalent impurity is to

A. increase the number of free electrons B. create minority carriers
C. reduce the conductivity of silicon D. increase the number of holes
Q2 Marks(5)
For v1=10v find current through the diode and find Vo .

- if the diode is reversed ,find the voltage on the diode
and the current through the diode.
Examiner:
aya assem
Name: sec:
Course Name: Electronics Time Allowed : 30 Minutes
Q1 Marks( 10)
1. . The atomic number of silicon is

A. 8 B. 14 C. 4
2 Each atom in a silicon crystal has

A. no valence electrons because all are shared with others atoms
B. eight valence electrons because all are with other atoms
C. four valence electrons
D. four conduction electrons

4- . In semiconductor the forbidden energy gap lies

A .Just below the conduction band B. Just above the conduction band
C. Either above or below the conduction band D. Between the valence band and conduction band
5- A trivalent impurity is added to silicon to create

A. germanium B. an n-type semiconductor
C. a depletion region D. a p-type semiconductor
6-. A PN junction is said to be forward biased when

7-. Holes in an n-type semiconductor are

A. minority carriers that are thermally produced B. majority carriers that are thermally produced
C. minority carriers that are produced by doping D. majority carriers that are produced by doping
8- When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately
equal to
A. the diode barrier potential B. the bias battery voltage
C. the total circuit voltage D. 0 V
9- At room temperature ,N-type material will have....
A. More of electrons
B. More of holes
C. Equal number of electrons and holes
10- A pn junction is formed by

A. ionization
B. the boundary of a p-type and an n-type material
C. the recombination of electrons and holes
D. the collision of a proton and a neutron
Q2 Marks(5)
For v1=10v find current through the Resistors and find Vo .
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)
1. In a PN junction with no external voltage, the electric field between acceptor and donor ions is
called a
A. Peak b. Barrier
c. Threshold D. Path
2. In an unbiased PN junction
A. The junction current is due to minority carriers only
B. The junction current at equilibrium is zero as equal but opposite carriers are crossing the junction
C. The junction current reduces with rise in temperature
D. The junction current at equilibrium is zero as charges do not cross the junction


5- At room temperature N-type material will have....

B. More of holes
6-. A PN junction is said to be reverse biased when

7 -At room temperature N,-type material will have....

B. More of holes
8- A PN junction
A. Has low resistance in forward as well as reverse directions
B. Has high resistance in forward as well as reverse directions
C. Conducts in forward direction only
D. Conducts in reverse direction only
9- As a PN junction is forward biased

A. Holes as well as electrons tend to drift away from the junction B. The depletion region decreases
C. The barrier tends to breakdown D. None of the above
10- The purpose of a trivalent impurity is to

Q2 Marks(5)
Find current through the resistors and voltage on the 6kΩ.
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)
1. The current in a semiconductor is produced by

2 -At Room Temperature, N-type material will have....

B. More of holes
3- In a PN junction with no external voltage, the electric field between acceptor and donor ions is
called a
A. Peak b. Barrier
4- . A pn junction is formed by
A. ionization B. the boundary of a p-type and an n-type material
C. the recombination of electrons and holes D. the collision of a proton and a neutron
5- When PN junction is in forward bias, by increasing the battery voltage

A. Circuit resistance increases B. Current through P-N junction increases
C. Current through P-N junction decreases D. None of the above happens


8- A PN junction

Q2 Marks(5)
Using ideal model diode, find v and i.
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)
1. When PN junction is in forward bias, by increasing the battery voltage

3-. When a voltmeter is placed across a forward-biased diode, it will read a voltage approximately equal to

5- A PN junction is said to be Reverse biased when

A.Positive terminal of the battery is connected to P-side and the negative side to the N-side
B.Junction is earthed
C.N-side is connected directly to the p-side
6-. At room temperature N-type material will have....

B. More of holes
7-. In a p-n junction , the positive voltage of which the diode starts to conduct consequently is called
A-cutoff voltage b-saturation voltage
c-knee voltage d- breakdown voltage.
8- A PN junction
9- In semiconductor the forbidden energy gap lies

A .Just below the conduction band B. Just above the conduction band
10- in p-n junction V-I characteristics during biased, at which region the current increase is very
small
A-saturation b- depletion
c-cut off d- breakdown
Q2 Marks(5)
Find the voltage v and the current I.
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)
1. The process of adding an impurity to an intrinsic semiconductor is called

A. atomic modification B. doping
C. recombination D. ionization
3- In a p-n junction , the positive voltage of which the diode starts to conduct consequently is called



E. Positive terminal of the battery is connected to P-side and the negative side to the N-side
F. Junction is earthed
G. N-side is connected directly to the p-side
H. Positive terminal of the battery is connected to N-side and the negative side to the P-side

8- A PN junction
D .Conducts in reverse direction only

Q2 Marks(5)
Find the current in the following circuit and the voltage across D1.
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)
1. At room temperature, N-type material will have....

B. More of holes
3- In a PN junction with no external voltage, the electric field between acceptor and donor ions is
called a
B. Peak b. Barrier
4- . A p-n junction is formed by

A. ionization B. the boundary of a p-type and an n-type material
C. the recombination of electrons and holes D. the collision of a proton and a neutron
5- When PN junction is in forward bias, by increasing the battery voltage

6-in p-n junction V-I characteristics during biased, at which region the current increase is very
small
7-. In a p-n junction , the positive voltage of which the diode starts to conduct consequently is called
8- A PN junction

Q2 Marks(5)
Find the voltage v and the current I.
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)
1. . The atomic number of silicon is

A. 8 B. 14 C. 4
2 Each atom in a silicon crystal has

A. no valence electrons because all are shared with others atoms
B. eight valence electrons because all are with other atoms
C. four valence electrons
D. four conduction electrons

4- . In semiconductor the forbidden energy gap lies

A. Just below the conduction band B. Just above the conduction band

6-.the cutoff voltage for diode of silicon semiconductor and germanium semiconductor
is…….respectively
A- 0.5 and 0.1 c- 0.7 and 0.5
B- 0.3 and 0.5 d- 0.7 and 0.3
7-. In a pn junction , the positive voltage of which the diode starts to conduct consequently is called
C-knee voltage d- breakdown voltage.
8- A PN junction
10- in pn junction V-I characteristics during biased, at which region the current increase is very
small
Q2 Marks(5)
Find the voltage v and the current I through the resistor assume practical diode model.
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)



6-.- in p-n junction V-I characteristics during biased, at which region the current increase is very
small
8- At room temperature, N-type material will have....

B. More of holes
A.Holes as well as electrons tend to drift away from the junction B.The depletion region decreases
C.The barrier tends to breakdown D.None of the above
small
Q2 Marks(5)
Find the voltage v and the current I. assume ideal diode model.
Examiner:
aya assem
Name: sec:
Q1 Marks( 10)

B.T he junction current at equilibrium is zero as equal but opposite carriers are crossing the junction


6-.the cutoff voltage for diode of silicon semiconductor and germanium semiconductor
is…….respectively
A- 0.5 and 0.1 c- 0.7 and 0.5
B- 1 and 0.4 d- 0.7 and 0.3
small
Q2 Marks(5)
Find the voltage v and the current I. assume practical diode model.
Examiner:
aya assem

Quiz 1

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Name: sec:

Course Name: Electronics Time Allowed: 30 Minutes

Date of Exam: 28/10/2019 Level: 2nd Year

Answer the following

3- The current in a semiconductor is produced by

4- The energy band in which free electrons exist is the

5- A reverse-biased PN junctions has

6-. A PN junction is said to be reversed biased when

7-. Electron-holes pairs are produced by

8- A semiconductor is formed by ……… bonds.

10- The purpose of a pentavalent impurity is to

For v1=10v find current through the diode and find Vo .

Course Name: Electronics Time Allowed : 30 Minutes

Date of Exam: 28/10/2019 Level: 2nd Year

Answer the following

1. . The atomic number of silicon is

2 Each atom in a silicon crystal has

3- The current in a semiconductor is produced by

4- . In semiconductor the forbidden energy gap lies

5- A trivalent impurity is added to silicon to create

6-. A PN junction is said to be forward biased when

7-. Holes in an n-type semiconductor are

10- A pn junction is formed by

For v1=10v find current through the Resistors and find Vo .

Course Name: Electronics Time Allowed: 30 Minutes

Date of Exam: 28/10/2019 Level: 2nd Year

Answer the following

3- The current in a semiconductor is produced by

4- The energy band in which free electrons exist is the

5- At room temperature N-type material will have....

6-. A PN junction is said to be reverse biased when

7 -At room temperature N,-type material will have....

9- As a PN junction is forward biased

10- The purpose of a trivalent impurity is to

Find current through the resistors and voltage on the 6kΩ.

Course Name: Electronics Time Allowed: 30 Minutes

Date of Exam: 28/10/2019 Level: 2nd Year

Answer the following

1. The current in a semiconductor is produced by

2 -At Room Temperature, N-type material will have....

5- When PN junction is in forward bias, by increasing the battery voltage

6-. A PN junction is said to be forward biased when

7-. Electron-holes pairs are produced by

10- The purpose of a pentavalent impurity is to

Using ideal model diode, find v and i.

Course Name: Electronics Time Allowed: 30 Minutes

Date of Exam: 29/10/2019 Level: 2nd Year

Answer the following

1. When PN junction is in forward bias, by increasing the battery voltage

4- The energy band in which free electrons exist is the

5- A PN junction is said to be Reverse biased when

6-. At room temperature N-type material will have....

9- In semiconductor the forbidden energy gap lies

Find the voltage v and the current I.

Course Name: Electronics Time Allowed: 30 Minutes

Date of Exam: 28/10/2019 Level: 2nd Year

Answer the following

1. The process of adding an impurity to an intrinsic semiconductor is called

4- The energy band in which free electrons exist is the

5- A reverse-biased PN junctions has

6-. A PN junction is said to be forward biased when

7-. Electron-holes pairs are produced by