Elec Devices Nci Rcs

ELECTRONIC DEVICES AND CIRCUITS (section1) breakdown voltage.
D. none of the above.

1. At room temperature the current in an intrinsic
semiconductor is due to 11. At very high temperatures the extrinsic semi conductors
A. holes B. electrons become intrinsic because
C. ions D. holes and electrons A. drive in diffusion of dopants and carriers
B. band to band transition dominants over impurity
2. Work function is the maximum energy required by the fastest ionization
electron at 0 K to escape from the metal surface. C. impurity ionization dominants over band to band transition
A. True B. False D. band to band transition is balanced by impurity ionization
3. The most commonly used semiconductor material is 12. When a voltage is applied to a semiconductor crystal then
A. silicon the free electrons will flow.
B. germanium A. towards positive terminal
C. mixture of silicon and germanium B. towards negative terminal
D. none of the above C. either towards positive terminal or negative terminal
D. towards positive terminal for 1 μs and towards negative
4. In which of these is reverse recovery time nearly zero? terminal for next 1 μs
A. Zener diode B. Tunnel diode
C. Schottky diode 13. Ferrite have
D. PIN diode A. low copper loss
B. low eddy current loss
5. A transistor has a current gain of 0.99 in the CB mode. Its C. low resistivity
current gain in the CC mode is D. higher specific gravity compared to iron
A. 100 B. 99
C. 1.01 D. 0.99 14. In a p type material the Fermi level is 0.3 eV above valence
band. The concentration of acceptor atoms is increased. The
6. In p-n-p transistor the current IE has two components viz. new position of Fermi level is likely to be
IEP due to injection of holes from p-region to n-region and IE A. 0.5 eV above valence band
due to injection of electrons from n-region to p-region. Then B. 0.28 eV above valence band
A. IEp and IEn are almost equal C. 0.1 eV above valence band
B. IEp >> IEn D. below the valence band
C. IEn >> IEp
D. either (a) or (c) 15. In an n-p-n transistor, the majority carriers in the base are
A. electrons B. holes
7. In an n channel JFET, the gate is C. both holes and electrons D. either holes or electrons
A. n type B. p type
C. either n or p D. partially n & partially p 16. An LED has a rating of 2 V and 10 mA. It is used along with
6V battery. The range of series resistance is
8. The amount of photoelectric emission current depends on A. 0 to 200 Ω B. 200 - 400 Ω
A. frequency of incident radiation C. 200 Ω and above D. 400 Ω and above
B. intensity of incident radiation
C. both frequency and intensity of incident radiation 17. The number of doped regions in PIN diode is
D. none of the above A. 1 B. 2
C. 3 D. 1 or 2
9. Assertion (A): A p-n junction has high resistance in reverse
direction. 18. A transistor has two p-n junctions. The batteries should be
Reason (R): When a reverse bias is applied to p-n junction, the connected such that
width of depletion layer increases. A. both junctions are forward biased
A. Both A and R are true and R is correct explanation of A B. both junctions are reverse biased
B. Both A and R are true but R is not a correct explanation of A C. one junction is forward biased and the other is reverse
biased
C. A is true but R is false D. none of the above
D. A is false but R is true
19. A silicon (PN) junction at a temperature of 20°C has a
10. In the circuit of figure the function of resistor R and diode D reverse saturation current of 10 pico Ampere. The reverse
are saturation current at 40°C for the same bias is approximately.
A. 30 pA B. 40 pA
C. 50 pA D. 60 pA
20. In a bipolar transistor the barrier potential

A. 0 B. a total of 0.7 V
C. 0.7 V across each depletion layer D. 0.35 V
A. to limit the current and to protect LED against over voltage 21. Recombination produces new electron-hole pairs
B. to limit the voltage and to protect LED against over current A. True B. False—
C. to limit the current and protect LED against reverse
Page 1
22. An amplifier without feedback has a voltage gain of 50, 32. A particular green LED emits light of wavelength 5490, Å,
input resistance of 1 kΩ and output resistance of 2.5 kΩ. The the energy bandgap of the semiconductor material used there
input resistance of the current shunt -ve feedback amplifier is .. h = 6.6 x 10-34 J sec.
using the above amplifier with a feedback factor of 0.2 is A. 2.26 eV B. 1.98 eV C. 1.17 eV D. 0.74 eV
A. 1/11 kΩ B. 1/5 kΩ
C. 5 kW D. 11 kW 33. In a zener diode
A. the forward current is very high
23. As compared to an ordinary semiconductor diode, a B. sharp breakdown occurs at a certain reverse voltage
Schottky diode C. the ratio v-i can be negative
A. has lower cut in voltage B. has higher cut in voltage D. there are two p-n junctions
C. lower reverse saturation current D. both (b) and (c)
34. In a bipolar transistor which current is largest
24. Assertion (A): When a high reverse voltage is applied to a A. collector current
p-n junction the diode breaks down. B. base current
Reason (R): High reverse voltage causes Avalanche effect. C. emitter current
A. Both A and R are true and R is correct explanation of A D. base current or emitter current
B. Both A and R are true but R is not a correct explanation of A
35. The v-i characteristics of a FET is shown in figure. In which
C. A is true but R is false region is the device biased for small signal amplification
25. As compared to an ordinary semiconductor diode, a

Schottky diode
A. has higher reverse saturation current
B. has higher reverse saturation current and higher cut in
voltage
C. has higher reverse saturation current and lower cut in
A. AB B. BC C. CD D. BD
voltage
D. has lower reverse saturation current and lower cut in voltage
36. Secondary emission is always decremental.
A. True B. False
26. Crossover distortion behaviour is characteristic of
A. class A O/P stage
37. In a degenerate n type semiconductor material, the Fermi
B. class B O/P stage--
level,
C. class AB output stage
A. is in valence band
D. common pulse O/P state
B. is in conduction band
C. is at the centre in between valence and conduction bands
27. If aac for transistor is 0.98 then βac is equal to
D. is very near valence band
A. 51 B. 49 C. 47 D. 45
38. The types of carriers in a semiconductor are
28. Assertion (A): The conductivity of p type semiconductor is
A. 1 B. 2 C. 3 D. 4
higher than that of intrinsic semiconductor.
Reason (R): The addition of donor impurity creates additional
39. A potential of 7 V is applied to a silicon diode. A resistance
energy levels below conduction band.
of 1 K ohm is also in series with the diode. The current is
A. Both A and R are true and R is correct explanation of A
A. 7 mA B. 6.3 mA C. 0.7 mA D. 0
B. Both A and R are true but R is not a correct explanation
40. Assertion (A): The reverse saturation current in a
of A semiconductor diode is 4nA at 20°C and 32 nA at 50°C.
C. A is true but R is false Reason (R): The reverse saturation current in a semiconductor
D. A is false but R is true diode doubles for every 10°C rise in temperature.
A. Both A /\and R are true and R is correct explanation of A
29. In an n-p-n transistor biased for operation in forward active
region
A. emitter is positive with respect to base
C. A is true but R is false
B. collector is positive with respect to base
C. base is positive with respect to emitter and collector is
positive with respect to base 41. Calculate the stability factor and change in IC from 25°C to
D. none of the above 100°C for, β = 50, RB/ RE = 250, ΔIC0 = 19.9 nA for emitter
bias configuration.
30. An increase in temperature increases the width of depletion
A. 42.53, 0.85 μA B. 40.91, 0.58 μA
layer.
C. 40.91, 0.58 μA D. 41.10, 0.39 μA
A. True B. False
42. A periodic voltage has following value for equal time
31. A zener diode is used in
intervals changing suddenly from one value to next... 0, 5, 10,
A. voltage regulator circuit
20, 50, 60, 50, 20, 10, 5, 0, -5, -10 etc. Then rms value of the
B. amplifier circuits
waveform is
C. both voltage regulator and amplifier circuit
A. 31 V B. 32 V
D. none of the above
C. insufficient data D. none of these
Page 2
43. Work function of oxide coated cathode is much lower than A. remain unchanged B. decrease
that of tungsten cathode. C. change Polarity D. increase
A. True B. False
4. Which of the following is used for generating time varying
44. The word enhancement mode is associated with wave forms?
A. tunnel diode B. MOSFET A. MOSFET B. PIN diode
C. JFET D. photo diode C. Tunnel diode D. UJT
45. In which region of a CE bipolar transistor is collector 5. Calculate the resistivity of n-type semiconductor from the
current almost constant? following data, Density of holes = 5 x 1012 cm-3. Density of
A. Saturation region B. Active region electrons = 8 x 1013 cm-3, mobility of conduction electron =
C. Breakdown region D. Both saturation and active region 2.3 x 104 cm2/ V-sec and mobility of holes = 100 cm2/V-sec.
A. 0.43 Ω-m B. 0.34 Ω-m
46. A p-n junction diode has C. 0.42 Ω-m D. 0.24 Ω-m
A. low forward and high reverse resistance
B. a non-linear v-i characteristics 6. An one sided abrupt junction has 1021/m3 of dopants on the
C. zero forward current till the forward voltage reaches cut in lightly doped side, zero bias voltage and a built-in potential of
value 0.2 V. The depletion width of abrupt junction.(q = 1.6 x 10-19
D. all of the above C, εr =16, ε0 = 8.87 x 10-12 F/m) is
A. 0.036 nm B. 0.6 μm
47. Which of the following is true as regards photo emission? C. 3 mm D. 1.5 mm
A. Velocity of emitted electrons is dependent on light intensity
B. Rate of photo emission is inversely proportional to light 7. n-type semiconductors
intensity A. are negatively charged
C. Maximum velocity of electron increases with decreasing B. are produced when indium is added as impurity to
germanium
wavelength C. are produced when phosphorus is added as impurity to
D. Both holes and electrons are produced silicon
48. The power dissipation in a transistor is the product of
A. emitter current and emitter to base voltage 8. In all metals
B. emitter current and collector to emitter voltage A. conductivity decreases with increase in temperature
C. collector current and collector to emitter voltage B. current flow by electrons as well as by holes
D. none of the above C. resistivity decreases with increase in temperature
D. the gap between valence and conduction bands is small
49. The normal operation of JFET is
A. constant voltage region 9. The voltage across a zener diode
B. constant current region A. is constant in forward direction
C. both constant voltage and constant current regions B. is constant in reverse direction
D. either constant voltage or constant current region C. is constant in both forward and reverse directions
50. The minority carrier life time and diffusion constant in a
semiconductor material are respectively 100 microsecond and 10. Assertion (A): Two transistors one n-p-n and the other p-n-
100 cm2/sec. The diffusion length is p are identical in all respects (doping, construction, shape,
A. 0.1 cm B. 0.01 cm C. 0.0141 cm D. 1 cm size). The n-p-n transistor will have better frequency response.
Reason (R): The electron mobility is higher than hole mobility.
ELECTRONIC DEVICES AND CIRCUITS (section2) A. Both A and R are true and R is correct explanation of A
1. An incremental model of a solid state device is one which
represents the C. A is true but R is false
A. ac property of the device at desired operating point D. A is false but R is true
B. dc property of the device at all operating points
C. complete ac and dc behaviour at all operating points 11. The threshold voltage of an n-channel enhancement mode
D. ac property of the device at all operating points MOSFET is 0.5 when the device is biased at a gate voltage of
3V. Pinch off would occur at a drain voltage of
2. What is the correct sequence of the following step in the A. 1.5 V B. 2.5 V C. 3.5 V D. 4.5 V
fabrication of a monolithic, Bipolar junction transistor?
1.Emitter diffusion 2.Base diffusion 12. Which of these has degenerate p and n materials?
3.Buried layer formation 4.Epi-layer formation A. Zener diode B. PIN diode
C. Tunnel diode-- D. Photo diode
Select the correct answer using the codes given below:
A. 3, 4, 1, 2 B. 4, 3, 1, 2 13. A Schottky diode clamp is used along with switching BJT
C. 3, 4, 2, 1 D. 4, 3, 2, 1 for
A. reducing the power dissipation
3. For an n-channel enhancement type MOSFET, if the source B. reducing the switching time
is connected at a higher potential than that of the bulk (VSB > C. increasing the value of β
0), the threshold voltage VT of the MOSFET will D. reducing the base current
Page 3
14. From the given circuit below, we can conclude that. 25. Junction temperature is always the same as room
temperature.
A. True B. False
26. The mean free path of conduction electrons in copper is

about 4 x 10-8 m. For a copper block, find the electric field
which can give, on an average, 1 eV energy to a conduction
electron A. 2.62 x 107 V/m B. 2.64 x 107 V/m C. 2.5 x 107
V/m-- D. 2.58 x 107 V/m 27. When a p-n-p transistor is properly
biased to operate in active region the holes from emitter.
A. diffuse through base into collector region
A. BJT is pnp B. BJT is npn B. recombine with electrons in base
C. transistor is faulty D. not possible to determined C. recombine with electrons in emitter
15. In a piezoelectric crystal, applications of a mechanical
stress would produce 28. Assertion (A): Silicon is preferred over germanium in
A. plastic deformation of the crystal manufacture of semiconductor devices. Reason (R): Forbidden
B. magnetic dipoles in the crystal gap in silicon is more than that in germanium.
C. electrical polarization in the crystal A. Both A and R are true and R is correct explanation of A
D. shift in the Fermi level B. Both A and R are true but R is not a correct explanation of A
16. In which of the following is the width of junction barrier very
small?
A. Tunnel diode B. Photo diode
C. PIN diode D. Schottky diode 29. Assertion (A): A decrease in temperature increases the
reverse saturation current in a p-n diode. Reason (R): When a
17. If the reverse voltage across a p-n junction is increased
diode is reverse biased surface leakage current flows.
three times, the junction capacitance
A. will decrease
B. will increase
C. will decrease by an approximate factor of about 2
D. will increase by an approximate factor of about 2
18. Which of these has highly doped p and n region?
30. At room temperature a semiconductor material is
A. PIN diode B. Tunnel diode
A. perfect insulator B. conductor
C. Schottky diode D. Photodiode
C. slightly conducting D. any of the above
19. Measurement of Hall coefficient enables the determination
31. The static characteristic of an adequately forward biased P-
of
n junction is a straight line, if the plot is of ______ Vs → versus
A. recovery time of stored carrier
B. type of conductivity and concentration of charge
A. log I Vs log V B. log I Vs V
carriers
C. I Vs log V D. I Vs V
C. temperature coefficient and thermal conductivity
D. Fermi level and forbidden energy gap 32. In an n channel JFET
A. ID, IS and IG are considered positive when flowing into
20. The units for transconductance are
the transistor
A. ohms B. amperes
B. ID and IS are considered positive when flowing into
C. volts D. siemens
transistor and IG is considered positive when flowing out of it
21. The amount of photoelectric emission current depends on C. ID, IS, IG are considered positive when flowing out of
the frequency of incident light. transistor
A. True B. False D. IS and IG are considered positive when flowing into
transistor and ID is considered positive when flowing out of it
22. When a p-n junction is forward biased
A. the width of depletion layer increases 33. The intrinsic carrier concentration of silicon sample at 300
B. the width of depletion layer decreases K is 1.5 x 1016/m3. If after doping, the number of majority
C. the majority carriers move away from the junction carriers is 5 x 1020/m3. The minority carrier density is A. 4.5 x
D. the current is very small 1011/m3-- B. 3.33 x 104/m3 C. 5 x 1020/m3 D. 3 x 10-5/m3 34.
A diode is operating in forward region and the forward voltage
23. The carriers of n channel JFET are and current are v = 3 + 0.3 sin ωt (volts) and i = 5 + 0.2 sin ωt
A. free electrons and holes B. holes (mA). The average power dissipated is
C. free electrons or holes D. free electrons A. 15 mW B. about 15 mW
C. 1.5 mW D. about 1.5 mW
24. The depletion layer around p-n junction in JFET consists of
A. hole B. electron
C. immobile charges D. none of the above
Page 4
35. Two identical silicon diodes D1 and D2 are connected back C. A is true but R is false
to back shown in figure. The reverse saturation current Is of D. A is false but R is true
each diode is 10-8 amps and the breakdown voltage VBr is 50
v. Evaluate the voltages VD1 and VD2 dropped across the 9. Which of the following elements act as donor impurities?
diodes D1 and D2 assuming KT/q to be 25 m V. Gold, Phosphorus, Boron, Antimony, Arsenic, Indium Select
the answer using the following codes :
A. 1, 2 and 3 B. 1, 2, 4, and 6
C. 3, 4, 5 and 6 D. 2, 4 and 5—
10. Light dependent resistor is

A. photo resistive device B. photo voltaic device
C. photo emissive device D. either (a) or (c)
A. 4.983 V, 0.017 V B. - 4.98 V, - 0.017 V
C. 0.17 V, 4.983 V D. - 0.017 V, - 4.98 V 11. The breakdown voltage in a zener diode
A. is almost constant B. is very small
36. For BJT transistor. The maximum power dissipation is C. may destroy the diode D. decreases with increase in current
specified as 350 mW if ambient temperature is 25°C. If ambient
temperature is 60°C the maximum power dissipation should be 12. A varactor diode is used for
limited to about A. tuning B. rectification
A. 100 mW B. 250 mW C. amplification D. rectification and amplification
C. 450 mW D. 600 mW
13. One eV = 1.602 x 10-19 joules.
37. The concentration of minority carriers in a semiconductor A. True B. False
depends mainly on
A. the extent of doping B. temperature 14. Assertion (A): When VDS is more than rated value the
C. the applied bias D. none of the above drain current in a JFET is very high.
Reason (R): When VDS is more than rated value, avalanche
ELECTRONIC DEVICES AND CIRCUITS (section3) breakdown occurs.
1. Which of these has 3 layers? B. Both A and R are true but R is not a correct explanation of A
A. PIN diode B. Zener diode
C. Schottky diode D. Photo diode C. A is true but R is false
2. As per Einstein's equation, the velocity of emitted electron in
photoelectric emission is given by the equation 15. If ib is plate current, eb is plate voltage and ec is grid
A. 1/2mv2 = hf - Uw B. 1/2mv2 ≤ hf - Uw voltage the v-i curve of a vacuum triode is ib = 0.003 (eb +
C. 1/2mv2 = hf + Uw D. 1/2mv2 ≤ hf + Uw kec)n. Typical values of k and n are
A. 0.5 and 1 B. - 2 and 1 C. 30 and 1 D. 30 and 1.5
3. For a P-channel enhancement type MOSFET determine the
drain current if K = 0.278 x 10-3A/V2, VGS = -4V, VT = -2V, 16. In which material do conduction and valence bands overlap
Voltage equivalent at 27°C = 26 mV. A. insulators B. conductors
A. 10 mA B. 1.11 mA C. 0.751 mA D. 46.98 mA C. conductor and semiconductor D. semiconductors
4. The skin depth of copper is found to be 66 mm at 1 MHz at a 17. For a photoconductor with equal electron and hole
certain temperature. At the same temperature and at 2 MHz, mobilities and perfect ohmic contacts at the ends, an increase
the skin depth would be approximately in illumination results in
A. 47 μm-- B. 33 μm C. 92 μm D. 1.22 μm A. a change in O.C. voltage B. a change in S.C. current
C. a decrease in resistance D. an increase in resistance
5. When p-n junction is reverse biased the holes in p material
move towards the junction and electrons in n material move 18. Discrete transistors T1 and T2 having maximum collector
away from the junction. current rating of 0.75 amp are connected in parallel as shown
A. True B. False in the figure, this combination is treated as a single transistor to
carry a total current of 1 ampere, when biased with self bias
6. A semiconductor diode is biased in forward direction and circuit. When the circuit is switched on, T1 draws 0.55 amps
carrying current I. The current due to holes in p material is and T2 draws 0.45 amps. If the supply is kept on continuously,
A. I B. 0 C. less than I D. 0.5 ultimately it is very likely that
7. Between which regions does BJT act like switch?

A. Cut off and saturation B. Cut off and forward active
C. Forward active and cut off D. Saturation and active
8. Assertion (A): When a photoconductive device is exposed to

light, its bulk resistance increases.
Reason (R): When exposed to light, electron hole pairs are
generated in the photoconductive device. A. Both T1, and T2 get damaged
A. Both A and R are true and R is correct explanation of A B. Both T1, and T2 will be safe.
B. Both A and R are true but R is not a correct explanation of A C. T1 Will get damaged and T2 will be safe
D. T2 will get damaged and T1, will be safe.
Page 5
19. The number of p-n junctions in a semiconductor diode are 30. If the drift velocity of holes under a field gradient of 100 V/m
A. 0 B. 1 C. 2 D. 1 or 2 in 5 m/s, their mobility (in SI units) is
A. 0.05 B. 0.5 C. 50 D. 500
20. Assertion (A): A high junction temperature may destroy a
diode. Reason (R): As temperature increases the reverse 31. The derating factor for a BJT transistor is about
saturation current increases. A. 0.5 mW/°C B. 2.5 mW/°C C. 10 mW/°C D. 25 mW/°C
B. Both A and R are true but R is not a correct explanation of A 32. An intrinsic silicon sample has 2 million free electrons. The
number of holes in the sample is
C. A is true but R is false A. 2 million B. almost zero
D. A is false but R is true C. more than 2 million D. less than 2 million
21. When a diode is not conducting, its bias is 33. Assertion (A): When reverse voltage across a p-n junction
A. forward B. zero C. reverse D. zero or reverse is increased, the junction capacitance decreases.
Reason (R): Capacitance of any layer is inversely proportional
22. The SCR would be turned OFF by voltage reversal of to thickness.
applied anode-cathode ac supply of frequency of A. Both A and R are true and R is correct explanation of A
A. 30 kHz B. 15 kHz C. 5 kHz D. 20 kHz B. Both A and R are true but R is not a correct explanation of A
23. The number of valence electrons in a donor atom is D. A is false but R is true
A. 2 B. 3 C. 4 D. 5
34. In an n type semiconductor
24. An electron rises through a voltage of 100 V. The energy A. number of free electrons and holes are equal
acquired by it will be B. number of free electrons is much greater than the
A. 100 eV B. 100 joules C. (100)1.2 eV D. (100)1.2 joules number of holes
C. number of free electrons may be equal or less than the
25. Measurement of hall coefficient enables the determination number of holes
of D. number of holes is greater than the number of free electrons
A. mobility of charge carriers
B. type of conductivity and concentration of charge 35. Mobility of electrons and holes are equal.
carriers A. True B. False
C. temperature coefficient and concentration of charge carriers
D. fermi level and forbidden energy gap 36. Electrons can be emitted from a metal surface due to high
electric field.
26. A Varactor diode has A. True B. False
A. a fixed capacitance
B. a fixed inductance 37. In an n type semiconductor the fermi level is 0.35 eV below
C. a voltage variable capacitance the conduction band, the concentration of donor atoms is
D. a current variable inductance increased to three times. The new position of Fermi level will
be
27. The most important set of specifications of transformer oil A. 0.35 eV below conduction band
includes B. about 0.32 eV below conduction band
A. dielectric strength and viscosity C. about 0.32 eV above conduction band
B. dielectric strength and flash point D. about 0.1 eV below conduction band
C. flash point and viscosity
D. dielectric strength, flash point and viscosity 38. Assertion (A): In a BJT, the base region is very thick.
Reason (R): In p-n-p transistor most of holes given off by
28. Assertion (A): In Hall effect the O.C. transverse voltage emitter diffuse through the base.
developed by a current carrying semiconductor with a steady A. Both A and R are true and R is correct explanation of A
magnetic field perpendicular to the current direction has B. Both A and R are true but R is not a correct explanation of A
opposite signs for n and p semiconductors. Reason (R): The C. A is true but R is false
magnetic field pushes both holes and electrons in the same D. A is false but R is true
direction.
A. Both A and R are true and R is correct explanation of A 39. Assertion (A): The behaviour of FET is similar to that of a
B. Both A and R are true but R is not a correct explanation of A pentode.
C. A is true but R is false Reason (R): FETs and vacuum triode are voltage controlled
D. A is false but R is true devices.
29. A voltage of 9 V is applied in forward direction to a B. Both A and R are true but R is not a correct explanation of A
semiconductor diode in series with a load resistance of 1000 C. A is true but R is false
Ω. The voltage across the load resistance is zero. It indicates D. A is false but R is true
that
A. diode is short circuited 40. SCR can be turned on by applying anode voltage at a
B. diode is open circuited sufficient fast rate applying sufficiently large anode voltage
C. resistor is open circuited increasing the temperature of SCR to a sufficiently applying
D. diode is either o.c or s.c sufficiently large gate current.
A. 1, 2, 4 only B. 4 only C. 1, 2, 3, 4 D. none
Page 6
41. In a bipolar transistor D. may cause an increase or decrease in reverse saturation
A. recombination in base regions of both n-p-n and p-n-p current depending on rating of diode
transistor is low
B. recombination in base regions of both n-p-n and p-n-p 2. An air gap provided in the iron core of an inductor prevents
transistors is high A. flux leakage B. hysteresis loss
C. recombination in base region of n-p-n transistor is low but C. core saturation D. heat generation
that in p-n-p transistor is high
D. recombination in base region of p-n-p transistor is low but 3. Generally, the gain of a transistor amplifier falls at high
that in n-p-n transistor is high frequency due to the
A. internal capacitance of the device
42. If for a silicon n-p-n transistor, the base to emitter voltage B. coupling capacitor at the I/P
(VBE) is 0.7 V and the collector to base voltage VCB is 0.2 C. skin effect
Volt, then the transistor is operating in the D. coupling capacitor at the O/P
A. normal active mode B. saturation mode
C. inverse active mode D. cut off mode 4. Which of these has a layer of intrinsic semiconductor?
A. Zener diode B. PIN diode
43. The number of doped regions in a bipolar junction C. Photo diode D. Schottky diode
transistor is
A. 1 B. 2 C. 3 D. 4 5. Assertion (A): When Diode used as rectifier the reverse
breakdown voltage should not be exceeded. Reason (R): A
44. Donor energy level is n type semiconductor is very near high inverse voltage can destroy a p-n junction.
valence band. A. Both A and R are true and R is correct explanation of A
A. True B. False B. Both A and R are true but R is not a correct explanation of A
45. GaAs has an energy gap 1.43 eV the optical cut off C. A is true but R is false
wavelength of GaAs would lie in the D. A is false but R is true
A. visible region of the spectrum
B. infrared region of the spectrum 6. A Si sample is doped with a fixed number of group N
C. ultraviolet region of the spectrum impurities. The electron density n is measured from 4 K to
D. for ultraviolet region of the spectrum 1200 k for the sample. Which one of the following is correct?
A. n remains constant over the temperature range
46. Which of the following is basically a voltage controlled B. n increases monotonicaliy with increasing temp
capacitance? C. n increases first remains constant over a range and again
A. Zener diode B. Diode increases with increasing temperature
C. Varactor diode D. LED D. n increases show a peak and then decrease with
temperature
47. When the i-v curve of a photodiode passes through origin 7. Assertion (A): In design of circuit using BJT, a derating factor
the illumination is is used. Reason (R): As the ambient temperature increases,
A. maximum B. minimum heat dissipation becomes slower.
C. zero D. equal to rated value A. Both A and R are true and R is correct explanation of A
48. An n type silicon bar 0.1 cm long and 100 μm2 in cross-
sectional area has a majority carrier concentration of 5 x C. A is true but R is false
1020/m3 and the carrier mobility is 0.13 m0/V-s at 300k. If the D. A is false but R is true
charge of an electron is 1.6 x 10-19 coulomb, then the
resistance of the bar is 8. If the drift velocity of holes under a field gradient of 100 V/m
A. 10⁶ ohm B. 10⁴ ohm C. 10-¹ ohm D. 10-⁴ ohm is 5m/sec. Their mobility is
A. 0.05 B. 0.5 C. 50 D. 500
49. The threshold voltage of a MOSFET can be lowered by
using thin gate oxide reducing the substrate concentration 9. In a P type silicon sample, the hole concentration is 2.25 x
increasing the substrate concentration. Of the above statement 1015 / cm3. If the intrinsic carrier concentration is 1.5 x 1010/
cm3 the electron concentration is
A. 3 alone is correct B. 1 and 2 are correct A. zero B. 10¹⁰/cm3 C. 10⁵/cm3 D. 1.5 x 10²⁵/cm3
C. 1 and 3 are correct D. 2 alone is correct
10. The behaviour of a JFET is similar to that of
50. In which device does the extent of light controls the A. NPN transistor B. PNP transistor
conduction C. SCR D. Vacuum triode
A. photovoltaic cell B. photo electric relay
C. LED D. photo sensitive device 11. What is the effect of cut in voltage on the wave form of
output as compared to input in a semiconductor diode?
ELECTRONIC DEVICES AND CIRCUITS (section4) A. The duration of output waveform is less than 180°
B. Output voltage is less than input voltage
1. An increase in junction temperature of a semiconductor C. Output voltage is more than input voltage
diode D. Both (a) and (b)
A. causes a small increase in reverse saturation current
B. causes a large increase in reverse saturation current
C. does not affect reverse saturation current
Page 7
12. As temperature increases the number of free electrons and becomes approximately equal to
holes in an intrinsic semiconductor
A. increases B. decreases
C. remains the same D. may increase or decrease
13. At room temperature kT = 0.03 eV.

A. True B. False
A. 747 mV B. 660 mV C. 680 mV D. 700 mV
14. Assertion (A): A JFET behaves as a resistor when VGS <
25. The work function of a photo surface whose threshold wave
VP. Reason (R): When VGS < VP, the drain current in a JFET
length is 1200 A, will be
is almost constant.
A. 0.103 eV B. 0.673 eV C. 1.03 eV D. 1.27 eV
26. The diameter of an atom is
A. 10-⁶ metre B. 10-¹⁶ metre
D. A is false but R is true C. 10-¹⁵ metre D. 10-²¹ metre
15. In a reverse biased P-N junction, the current through the 27. N-type silicon is obtained by doping silicon with
junction increases abruptly at A. germanium B. aluminium
A. zero voltage B. 1.2 V C. boron D. phosphorus
C. 0.72 V D. breakdown voltage
28. When a p-n junction is reverse biased
16. Dielectric strength of polythene is around A. holes and electrons move away from the junction--
A. 10 kV/mm B. 40 kV/mm B. holes and electrons move towards the junction
C. 100 kV/mm D. 140 kV/mm C. holes move towards junction and electrons move away from
17. Resistivity of hard drawn copper is

junction
A. less than that of annealed copper
D. holes move away from junction and electrons move towards
B. more than that of annealed copper
C. same as that of annealed copper
junction
D. decreasing when temperature increases
29. If a sample of germanium and a sample of Si have the
18. The channel of JFET consists of
impurity density and are kept at room temperature then
A. p type material only
A. both will have equal value of resistivity
B. n type material only
B. both will have equal -ve resistivity
C. conducting material
C. resistivity of germanium will be higher than that of silicon
D. either p or n type material
D. resistivity of Si will be higher than of germanium
19. In a bipolar junction transistor adc = 0.98, ICO= 2 μA and
30. When a large number of atoms are brought together to
1B = 15 μA. The collector current IC is
form a crystal
A. 635 mA B. 735 mA
A. the energy levels of inner shell electrons are affected
C. 835 mA D. 935 mA
appreciably by the presence of other neighbouring atoms.
B. The energy levels of outer shell electrons are affected
20. The voltage across the secondary of the transformer in a
appreciably by the presence of other neighbouring atoms.
half wave rectifier with a shunt capacitor filter is 50 volts. The
C. the energy levels of both inner and outer shell electrons are
maximum voltage that will occur on the reverse biased diode
affected appreciably by the presence of other neighbouring
will be
atoms.
A. 100 V B. 88 V C. 50 V D. 25 V
D. none of the above.
21. Assertion (A): The forward resistance of a p-n diode is not
31. Determine the transistor capacitance of a diffused junction
constant. Reason (R): The v-i characteristics of p-n diode is
varicap diode of a reverse potential of 4.2 V if C(0) = 80 pf and
non-linear.
VT = 0.7 V
A. Both A and R are true and R is correct explanation of A--
A. 42 pf B. 153.03 pf
C. 13.33 pf D. Data inadequate
C. A is true but R is false D. A is false but R is true 22. For
32. At room temperature the barrier potential in a silicon diode
a photoengraving the mask used is A. master mask B.
is
slave mask C. working mask--
A. 0.1 V B. 0.3 V C. 0.7 V D. 1 V
D. photo mask
33. The cut in voltage of a diode is nearly equal to
23. In a varactor diode the increase in width of depletion layer
A. applied forward voltage B. applied reverse voltage
results in
C. barrier potential D. none of the above
A. decrease in capacitance B. increase in capacitance
C. no change in capacitance D. either (a) or (b) 34. Assertion (A): In a BJT base current is very small. Reason
(R): In a BJT recombination in base region is high.
24. In given figure a silicon diode is carrying a constant current
of 1 mA. When the temperature of the diode is 20°C, VD is
found to be 700 mV. If the temperature rises to 40°C, VD
Page 8
A. only holes B. only electrons
C. A is true but R is false C. mainly holes D. mainly electrons
45. In a JFET
35. A reverse voltage of 18 V is applied to a semiconductor A. drain current is very nearly equal to source current
diode. The voltage across the depletion layer is B. drain current is much less than source current
A. 0 V B. 0.7 V C. about 10 V D. 18 V C. drain current may be equal to or less than source current
D. drain current may be even more than source current
36. As temperature increases the forbidden gap in silicon
increases. 46. Consider the following statements: The function of oxide
A. True B. False layer in an IC device is to
•mask against diffusion or non implant
37. Assertion (A): Germanium is more commonly used than •insulate the surface electrically
silicon. Reason (R): Forbidden gap in germanium is less than •increase the melting point of silicon
that in silicon. •produce a chemically stable protective layer Of these
A. Both A and R are true and R is correct explanation of A statements:
B. Both A and R are true but R is not a correct explanation of A A. 1, 2, 3 are correct B. 1, 3, 4 are correct
C. 2, 3, 4 are correct D. 1, 2, 4 are correct
D. A is false but R is true 47. An extrinsic semiconductor sample has 6 billion silicon
atoms and 3 million pentavalent impurity atoms. The number of
38. Which of the following devices has substrate? electrons and holes is
A. JFET A. 3 million each
B. Depletion Type MOSFET B. 6 billion each
C. Enhancement type MOSFET C. 3 million free electrons and very small number of holes--
D. Both (b) and (c)— D. 3 million holes and very small number of free electrons
39. Assertion (A): The amount of photoelectric emission 48. In a reverse biased p-n junction, the reverse bias is 4V.
depends on the intensity of incident light. Reason (R): Photo The junction capacitance is about
electric emission can occur only if frequency of incident light is A. 0.1 F B. 4 μF C. 10 nF D. 20 pF
less than threshold frequency.
A. Both A and R are true and R is correct explanation of A 49. Photoconductive devices uses A. metallic conductors B.
B. Both A and R are true but R is not a correct explanation of A good quality insulators C. semiconductors-- D. either (a) or (c)
C. A is true but R is false 50. Assertion (A): Oxide coated cathodes are very commonly
D. A is false but R is true used. Reason (R): Work function of oxide coated cathode is 1
eV whereas it is 4.5 eV for pure tungsten.
40. In degenerate p type semiconductor material, the Fermi A. Both A and R are true and R is correct explanation of A
level, B. Both A and R are true but R is not a correct explanation of A
A. is in the valence band
B. is in conduction band C. A is true but R is false
C. is at the centre in between valence and conduction bands D. A is false but R is true
D. is very near conduction band
ELECTRONIC DEVICES AND CIRCUITS (section5)
41. Assertion (A): When a photoconductive device is exposed
to light, its bulk resistance increases. Reason (R): When 1. A JFET operates in ohmic region when
exposed to light, electron hole pairs are generated in the A. VGS = 0 B. VGS is less than pinch off voltage
photoconductive device. C. VGS = is Positive D. VGS = VDS
B. Both A and R are true but R is not a correct explanation of A 2. In CE connection, the leakage current of a transistor is about
A. 10 x 10-⁹ A B. 5 x 10-⁶ A C. 200 x 10-⁶ A D. 5 x 10-³
C. A is true but R is false A
3. The early effect in a BJT is caused by
42. As comparated to an ordinary p-n diode, the extent of A. fast turn on
impurity atoms in a tunnel diode B. fast turn off
A. is more B. is less C. large collector base reverse bias
C. may be more or less D. is almost the same D. large emitter base forward bias
43. In active filter circuits, inductances are avoided mainly 4. In a common emitter BJT amplifier, the maximum usable
because they supply voltage is limited by
A. are always associated with some resistance A. avalanche Beakdown of Base-Emitter junction
B. are bulky and unsuitable for miniaturisation B. collector emitter breakdown voltage with base
C. are non-linear in nature open(βVCEO)
D. saturate quickly C. collector emitter breakdown voltage with emitter
open(βVCEO)
44. When a p-n-p transistor is operating in active region, the D. zener break down voltage of the emitter base junction
current in the n region is due to
Page 9
5. Assertion (A): In active region of CE output characteristics of 16. The output v-i characteristics of enhancement type
BJT, collector current is nearly constant. Reason (R): Base MOSFET has
current in CE connection is very small. A. only an ohmic region
A. Both A and R are true and R is correct explanation of A B. only a saturation region
B. Both A and R are true but R is not a correct explanation of A C. an ohmic region at low voltage value and a saturation
region at high voltage
C. A is true but R is false D. a saturation region at low voltage value and an ohmic region
at high voltage
6. The temperature of cathode is increased from 2500K to
2600K. The increase in thermionic emission current is about 17. In a full wave rectifier, the current in each of the diodes
A. 0.1% B. 4% C. 50% D. 150%-- flows for
A. the complete cycle of the input signal
7. Consider the following statement: At finite temperature, B. half cycle of the input signal
magnetic dipoles in a material are randomly oriented giving low C. less than half cycle of the input signal
magnetization. When magnetic field H is applied, the D. one-fourth cycle of the input signal
magnetization?
•Increases with H 18. In an ideal junction transistor the impurity concentration in
•Decreases with H emitter (E ), base (B) and collector (C) is such that
•Decreases with temp for constant H Which of the statement A. E > B > C B. B > C > E
given above is/are correct? C. C > E > B D. C = E = B
A. 1 B. 2 C. 2, 3 D. 1 and 3
19. The rating of a transformer to deliver 100 watts of D.C.
8. Ferrites have power to a load under half wave rectifier will be nearly
A. low copper loss B. low eddy current loss A. 1 kVA B. 350 VA C. 175 VA D. 108 VA
C. low resistivity D. higher specific gravity compared to iron
20. When a p-n junction is forward biased, the current remains
9. Eg is the band gap, A is pre-factor, k is Boltzmann constant? zero till the applied voltage overcomes the barrier potential.
Which one of the following is the remaining grade of paper A. True B. False
used in paper capacitor, besides the other two grade of paper-
low and extra low loss? 21. Which rectifier has the best ratio of rectification?
A. Strong dielectric B. Regular A. Half wave rectifier B. Full wave rectifier
C. Rough D. High loss C. Bridge rectifier D. Three phase full wave rectifier
10. Barkhausen criterion of oscillation is 22. Assertion (A): A p-n junction is used as rectifier. Reason
A. Aβ > 1 B. Aβ = 1 C. Aβ = < 1 D. Aβ ≤ 1 (R): A p-n junction has low resistance in forward direction and
high resistance in reverse direction.
11. The current through a PN Junction diode with v volts A. Both A and R are true and R is correct explanation of A
applied to the P region to the N region, where (I0 is the reverse B. Both A and R are true but R is not a correct explanation of A
saturation current to the diode, m the ideality factor, k the
Boltzmann constant, T the absolute temperature and q the C. A is true but R is false
magnitude of charge on an electron) is D. A is false but R is true
A. I0 (e-qv/mkT - 1) B. I0 e-qv/mkT
C. I0 (1 - eqv/mkT) D. I0 (eqv/mkT - 1) 23. In an integrated circuit the SiO2 layers provide
A. electrical connection to external Ckt.
12. The ratio of diffusion constant for hole DP to the mobility for B. physical strength
holes is proportional to C. isolation
A. T2 B. T C. 1/T D. T3 D. conducting path.
13. The carrier mobility in a semiconductor is 0.4 m2/Vs. Its 24. For a n-channel JFET with r0 = 10 kW, (VGs= 0 V, VP = - 6
diffusion constant at 300k will be (in m2/s). V)the drain resistance rd at VGS= - 3 V is given by
A. 0.43 B. 0.16 C. 0.04 D. 0.01 A. 40 kΩ B. 2.5 kΩ C. 4.44 kW D. 120 kW
14. During induction heating of metals which of the following is 25. Which of the following are voltage controlled devices?
abnormally high? A. Vacum triode B. FET
A. Frequency B. Voltage C. SCR D. Both (a) and (b)
C. Current D. Power factor
26. Which of the following is known as insulated gate FET?
15. Assertion (A): Alkali metals are used as emitters in A. JFET B. MOSFET
phototubes. Reason (R): Alkali metals have low work functions. C. Both JFET and MOSFET D. None of the above
A. Both A and R are true and R is correct explanation of A 27. Assertion (A): The hybrid p model of a transistor can be
B. Both A and R are true but R is not a correct explanation of A reduced to h parameter model and vice versa. Reason (R):
Hybrid p and h parameter models are interrelated as both of
C. A is true but R is false them describe the same device.
D. A is false but R is true A. Both A and R are true and R is correct explanation of A
Page 10
C. A is true but R is false 39. Consider the following circuit configuration
D. A is false but R is true •common Emitter
•common Base
28. Which impurity atom will give p type semiconductor when •emitter follower
added to intrinsic semiconductor? •emitter follower using Darlington pair.
A. Phosphorus B. Boron The correct sequence in increasing order of I/P impedance of
C. Arsenic D. Antimony these configuration:
A. 2, 1, 4, 3 B. 1, 2, 4, 3
29. An insulator will conduct when the
A. voltage applied is more than the breakdown voltage C. 2, 1, 3, 4 D. 1, 2, 3, 4
B. temperature is raised to very high level
C. either (a) or (b) a 40. Assertion (A): Field emission is substantially independent
D. none of the above of temperature. Reason (R): When a high electric field is
created at metal surface field emission may occur.
30. Zener breakdown occurs A. Both A and R are true and R is correct explanation of A
A. due to rapture of covalent band B. Both A and R are true but R is not a correct explanation
B. mostly in germanium junctions of A
C. in lightly doped junctions C. A is true but R is false D. A is false but R is true
D. due to thermally generated minority carriers
41. In a p-n-p transistor operating in forward active mode
31. The maximum power handling capacity of a resistor A. base is positive with respect to emitter and collector
depends on B. base is negative with respect to emitter and collector
A. total surface area C. emitter is positive with respect to base and base is
B. resistance value positive with respect to collector
C. thermal capacity of the resistor D. emitter is negative with respect to base and base is positive
D. resistivity of the material used in the resistor with respect to collector
32. Epitaxial growth is used in ICs 42. Consider the following statements.
A. because it produces low parasitic capacitance •Etching
B. because it yields back to back isolating pn Junction •Exposure to UV radiation
C. to grow single crystal n doped silicon on a single crystal P- •Stripping
type substrate •Developing After a wafer has been coated with photo resist
D. to grow Selectivity single crystal P doped silicon of one the correct sequence of these steps in photolithography is
resistivity on a P type substrate of a different resistivity A. 2, 4, 3, 1 B. 2, 4, 1, 3
C. 4, 2, 1, 3 D. 3, 2, 3, 1
33. The mean life time of carrier may range from 10-9 seconds
to hundreds of μ-seconds. 43. If both the emitter base and the collector base junctions of
A. True B. False a bipolar transistor are forward biased, the transistor is in the
A. active region B. saturated region
34. In which mode of BJT operation are both junctions forward C. cut off region D. inverse mode
biased?
A. Active B. Saturation 44. In a triode the potential of grid (with respect to cathode) is
C. Cut off D. Reverse active usually
A. zero B. negative
35. Addition of a small amount of antimony to germanium will C. positive D. zero or positive
result in
A. formation of P-type semiconductor 45. A varactor diode is
B. more free electrons than holes in the semiconductors A. reverse biased B. forward biased
C. antimony concentrating on the edges of the crystals C. biased to breakdown D. unbiased
D. increased resistance
46. Fermi level in intrinsic semiconductor is at the centre of
36. In intrinsic semiconductor magnitude of free electron and forbidden energy band.
hole concentrations are equal. A. True B. False
A. True B. False
47. In a photo transistor the photocurrent is
37. A P-N junction offers A. emitter base junction B. collector base junction
A. high resistance in forward as well as reverse direction C. collector D. either (a) or (b)
B. low resistance in forward as well as reverse direction
C. conducts in forward direction only 48. In photoelectric emission the maximum kinetic energy of
D. conducts in reverse direction only emitted electron is proportional to
A. f B. f C. f2 D. f3
38. In modern MOSFETS, the material used for the gate is
A. high purity silicon 49. In a P-type semiconductor, the conductivity due to holes
B. high purity silica σP) is equal to e = charge of hole, μP = hole mobility, P = hole
C. heavily doped polycrystalline silicon concentration,
D. epitaxial grown silicon A. P•e/μp B. μp/P•e C. P•e•Μp D. 1/P•e•μp
Page 11
50. Hall effect is observed in a specimen when it is carrying 9. Which of the following statement about the photo electric
current and is placed in a magnetic field. The resulting electric emission is incorrect?
field inside the speciment will be in A. The maximum velocity of emission varies with the frequency
A. direction normal to both current and magnetic field of incident light
B. the direction of current B. The maximum velocity of emission varies with the
C. direction antiparallel to magnetic field intensity of light
D. an arbitrary direction depend upon conductivity C. The amount of photoelectric emission is directly proportional
ELECTRONIC DEVICES AND CIRCUITS (section6) to the intensity of light

D. The quantum yield depends on the frequency and not the
1. In P-N junction, the region containing the uncompensated intensity of incident light
acceptor and donor ions is called
A. transition zone B. depletion region 10. In a semiconductor avalanche breakdown occurs when
C. neutral region D. active region A. reverse bias exceeds the limiting value
B. forward bias exceeds the limiting value
2. In a photodiode the current is due to C. forward current exceeds the limiting value
A. majority carriers D. potential barrier is reduced to zero
B. minority carriers
C. both majority and minority carriers 11. No load d.c. output will be least in case of
D. either (a) or (b) A. half wave rectifier
B. full wave rectifier
3. Consider the following statements C. bridge rectifier
•Acceptor level lies close the valence band. D. three phase full wave rectifier
•Donor level lies close to the valence band.
•n type semiconductor behaves as an insulator at 0 K. 12. When an electron breaks a covalent bond and moves
•p type semiconductor behaves as an insulator at 0 K. away,
Of these statements: A. a hole is created
A. 2 and 3 are correct B. 1 and 3 are correct B. a proton is also lost
C. 1 and 4 are correct D. 3 and 4 are correct C. atom becomes an ion
D. rest of the electron move at a faster rate
4. If the temperature of on extrinsic semiconductor is increased
so that the intrinsic carrier concentration is doubled, then 13. A photo diode is
A. the majority carrier density doubles A. forward biased B. reverse biased
B. the minority carrier density doubles C. either forward or reverse biased D. unbiased
C. the minority carrier density becomes 4 times the original
value 14. Germanium and Si phosphorus have their maximum
D. both majority and minority carrier densities double spectral response in the
A. infrared region B. ultraviolet region
5. Assertion (A): The conductivity of an n type semiconductor C. visible region D. X-ray region
increases with increase in temperature and increase in density
of donor atoms. Reason (R): Diffusion of carriers occurs in 15. In which condition does BJT behave like a closed switch?
semiconductors. A. Cut off B. Saturation
A. Both A and R are true and R is correct explanation of A C. Forward active D. Reverse active
of A 16. High purity copper is obtained by
C. A is true but R is false A. rolling casting B. casting
D. A is false but R is true C. electrolytic refining D. induction heating
6. The conductivity of materials found in nature ranges from 17. Photo electric emission can occur only if the frequency of
109 ohm-1m-1 to nearly 1018 ohm-1 m-1 from this it can be light is more than threshold frequency.
concluded that the conductivity of silicon in ohm-1 cm-1 will be A. True B. False
nearly
A. 0.5 x 10-¹⁵ B. 0.5 x 10-²¹ 18. In a JFET the width of channel is controlled by
C. 0.5 x 10-¹² D. 0.5 x 10-³ A. gate voltage B. drain current
C. source current D. all of the above
7. At any point on the v-i characteristics of a semiconductor
diode, the slope of v-i characteristics is called 19. The unit of thermal resistance of a semi-conductor device
A. resistance of diode is
B. conductance of diode A. Ohms B. Ohms/°C C. °C/ohm D. °C/watt
C. incremental resistance of diode
20. Figure represents a
D. incremental conductance of diode
8. The collector to emitter cutoff current (ICE0) of a transmitter

is related to collector to base cut off current (ICB0) as A. Varactor B. LED
A. ICE0 = ICB0 B. ICE0 = a ICB0 C. Zener diode D. Temperature dependent diode
C. ICE0 = ICBO/1-a D. ICE0 = ICBO/1+a
21. For generating 1 MHz frequency signal, the most suitable
circuit is
Page 12
A. phase shift oscillator B. weinbridge oscillator 34. Assertion (A): FET is a unipolar device. Reason (R): BJT is
C. colpitt's oscillator D. clapp oscillator bipolar device.
22. A doped semi-conductor is called B. Both A and R are true but R is not a correct explanation
A. impure semi-conductor B. dipole semi-conductor of A
C. bipolar semi-conductor D. extrinsic semi-conductor C. A is true but R is false
23. In n type MOSFET, the substrate
A. is p type B. is n type 35. Ferrites are
C. is metallic D. may be p or n type A. ferromagnetic materials
B. ferrimagnetic materials
24. The first and the last critical frequency of an RC driving C. ferroelectric materials
point impedance function must respectively by D. ferri-ferromagnetic materials
A. a zero and a pole B. a zero and a zero
C. a pole and a pole D. a pole and a zero 36. In a p-n-p transistor the main current carriers and the
mechanism of flow respectively are
25. The diffusion current is proportional to A. electrons, drift B. holes, drift
A. applied electric field C. holes, diffusion D. electrons, diffusion
B. concentration gradient of charge carrier
C. square of the electric field 37. The 6 V zener diode shown in figure has zero zener
D. cube of the applied electric field resistance and a knee current of 5 mA. The minimum value of
R, so that the voltage across it does not fall below 6 V is (Pic)
26. In the fabrication of n-p-n transistor in an IC, the buried A. 1.2 kΩ B. 80 Ω C. 50 W D. 0
layer on the P-type substrate is
A. P+ -doped 38. Secondary emission occurs in
B. n+ -doped A. diode B. triode
C. used to reduce the parasitic capacitance C. tetrode D. pentode
D. located in the emitter region
39. In common base connection, the output characteristics of a
27. Which quantity controls the effectiveness of LED in emitting bipolar junction transistor is drawn between
light? A. IC and VCB B. IC and VCE
A. Applied voltage B. Current C. IE and VCB D. IE and VCE
C. Extent of doping D. Temperature
40. In fabricating silicon BJT in ICs by the epitaxial process, the
28. The current gain of a BJT is number of diffusions used is usually
A. gm r0 B. gm/r0 C. gm rp D. gm/rp A. 2 B. 3 C. 4 D. 6
29. Ferromagnetic materials exhibit 41. Consider the following statements about diamagnetic
A. a linear B-H behaviour B. a non-linear B-H behaviour material and diamagnetism.
C. an exponential B-H behaviour D. none of the above •The materials have negative magnetic susceptibility.
•At very low temperature diamagnetic materials. Which of the
30. The saturation current in a semi-conductor diode statements given above is/are correct?
A. depends on forward voltage A. 1 only B. 2 only
B. depends on reverse voltage C. Both 1 and 2 D. neither 1 nor 2
C. is due to thermally generated minority carriers
D. none of the above 42. In a photo emissive device and emission efficiency is
increased by
31. When a ferromagnetic substance is magnetised, there are A. coating the cathode ray by an active materials
small changes in its dimensions. This phenomenon is called B. coating the cathode by an insulating material
A. hysteresis B. magnetostriction C. heating the cathode
C. diamagnetism D. bipolar relaxation D. cooling the anode
32. Gold is often diffused into silicon PN junction devices to 43. Materials in order of decreasing electrical conductivity are
A. increase the recombination rate A. aluminum, silver, gold, copper
B. reduce the recombination rate B. gold, silver, copper, aluminum
C. make silicon a direct gap semiconductor C. copper, silver, gold, aluminum
D. make silicon semimetal D. silver, copper, gold, aluminum
33. In the figure shows the circuits symbol of 44. Transconductance characteristics of JFET depict the
relation between
A. ID and VGS for different value of VDS
B. ID and VDS for different value of VGS
C. VGS and VDS for different values of ID
D. VDS and ID for different values of VGS
45. The resistivity of intrinsic semiconductor material is about

A. FET B. PMOSFET A. 10⁵ ohm-m B. 10³ ohm-m
C. CMOSFET D. NMOSFET C. 100 ohm-m D. 1 ohm-m
Page 13
46. Which of the following exhibits negative resistance in a
portion of its characteristics?
A. Tunnel diode B. Zener diode
C. JFET D. MOSFET and tunnel diode
47. The emission of light is LED due to

A. emission of holes
B. emission of electrons
C. generation of electromagnetic radiations A. output characteristics of n-p-n transistor (common base)
D. conversion of heat energy into illumination B. output characteristics of p-n-p transistor (common
base)
48. For bipolar transistor C. output characteristics of n-p-n transistor (common emitter)
A. -- B. D. output characteristics of p-n-p transistor (common emitter)
C. D. 8. Zener diode is invariably used with

A. forward bias B. reverse bias
C. either (a) or (b) D. zero bias
49. The sum of two or more arbitrary sinusoidal is
9. The relation between plate current and plate voltage of a
A. always periodic
vacuum diode is called
B. periodic under certain conditions
A. Richardson Dushman equation
C. never periodic
B. Langmuir Child law
D. periodic only if all the sinusoidals are identical in
C. Ohm's law
frequency and phase
D. Boltzmann's law
50. Which of the following is used as a passive component in
10. Given that the band gap of cadmium sulphide is 2.5 eV, the
electronic circuits?
maximum photon wavelength, for e--hole pair generation will
A. Tunnel diode B. Capacitor
be A. 5400 mm B. 540 mm
C. Transistor D. Vacuum tube
C. 5400 Å D. 540 Å
11. The maximum rectification efficiency in case of full wave
1. Lowest resistivity of the following is rectifier is
A. constantan B. german silver A. 100% B. 81.2% C. 66.6% D. 40.6%
C. manganin D. nichrome
12. For a full wave bridge rectifier supplied with 50 Hz a.c., the
2. Peak inverse voltage will be highest for lowest ripple frequency will be
A. half wave rectifier B. full wave rectifier A. 50 Hz B. 100 Hz C. 200 Hz D. 400 Hz
C. bridge rectifier D. three phase full wave rectifier
13. When an electron rises through a potential of 100 V it will
3. In CE configuration, the output characteristics of a bipolar acquired an energy of
junction transistor is drawn between A. 100 eV B. 100 Joules
A. IC and VCB B. IE and VCB C. 100 ergs D. 100 x 10-⁶ Newtons
C. IC and VCE D. IE and VCE
14. Which one of the following gain equations is correct for a
4. Assertion (A): The reverse current in a p-n junction is nearly MOSFET common-source amplifier? (gm is mutual
constant. Reason (R): The reverse breakdown voltage of a p-n conductance, and RD is load resistance at the drain)
diode depends on the extent of doping. A. AV = gm/(1 - RD) B. AV = gm/RD
A. Both A and R are true and R is correct explanation of A C. AV = gm/(1 + RD) D. AV = RD/gm
15. If 1 kVA transformer is used for all of the following rectifiers,
of A
the d.c. power availability will be least in case of
A. half wave rectifier
B. full wave rectifier
5. An n type semiconductor is illuminated by a steady flux of C. bridge rectifier
photons with energy greater than the band gap energy. The D. three phase full wave rectifier
change in conductivity Δσ obeys which relation? [ Here, e is
16. Which of the following is the ferric electric material?
the electron charge, μn electron mobility, μp hole mobility, Δn
A. Rochelle salt
(Δp) is the excess electron (hole) density ].
B. Barium titanate
A. Δσ = 0 B. Δσ = e(σn + σp) Δn
C. Potassium dihydrogen phosphate
C. Δσ = e(μnΔn - μpΔp) D. Δσ = e μnΔn
D. All of the above
6. Resistivity of metals is expressed in terms of
17. The amount of time between the creation and
A. μ ohm B. μ ohm/cm
disappearance of a hole in an intrinsic semiconductor material
C. μ ohm-cm D. μ ohm-cm/°C
is called
7. Figure shows characteristics curves for bipolar transistor. A. life cycle B. recombination time
These curves are C. life time D. half life
Page 14
18. In photo electric emission, the threshold frequency f0, work 31. Under low level injection assumption, the infected minority
function Uw, and Planck's constant h are related as carrier current for an extrinsic semiconductor is essentially the
A. B. A. diffusion current B. drift current
C. recombination current D. induced current
C. f0 = (Uw)(h)2 D. h = (Uw)(f0)
32. As the reverse voltage is increased, the depletion layer
19. In which n type device does p substrate extend upto silicon A. becomes narrow B. widens
dioxide layer? C. remains the same D. reduce to zero
A. JFET
B. Depletion type MOSFET 33. The cascade amplifier is a multistage configuration of
C. Enhancement type MOSFET A. CC-CB B. CE-CB
D. Both (b) and (c) C. CB-CC D. CE-CC
20. In a N-type semi-conductor, the concentration of minority 34. The light output of LED varies as (current)n. The value of n
carriers is mainly depends on is about
A. the number of acceptor atoms A. 0.5 B. 1 C. 1.3 D. 2.1
B. the number of donor atoms
35. If an electron move through a potential difference of 500 V,
C. the extent of doping
the energy possesses by it will be
D. the temperature of the material
A. 500 ergs B. 500 joules
21. The band gap of Si at room temperature is C. 500 eV-- D. 500 mV
A. 1.3 eV B. 0.7 Ev C. 1.1 eV D. 1.4 eV
36. In which of the following does a negative resistance region
22. Spot the odd one out exist in the v-i characteristics?
A. aluminium B. silver A. PIN diode B. Schottky diode
C. porcelain D. copper C. Tunnel diode D. Zener diode
23. Transition capacitance is associated with ________ and 37. The intrinsic resistivity of silicon at 300 K is about
depletion capacitance is associated with ________ diodes. A. 1 Ω-cm B. 400 Ω-cm
A. reverse bias and forward bias C. 10000 Ω-cm D. 230000 Ω-cm
B. forward bias and reverse bias
38. What happens when forward bias is applied to a junction
C. reverse bias and reverse bias
diode?
D. forward bias and forward bias
A. Majority carrier current is reduced to zero
24. Figure represents a(pic) B. Minority carrier current is reduced to zero
A. Tunnel diode B. PNP transistor C. Potential barrier is increased
C. Photo sensitive diode D. Photo emissive diode D. Potential barrier is decreased
25. If the energy gap of a semiconductor is 1.1 eV, then it 39. A differential amplifier is invariably used in the I/P stage of
would be. all OP-amps. This is done basically to produce the OP-amp
A. opaque to the visible light with a very high.
B. transparent to the visible light A. CMRR B. bandwidth
C. transparent to the ultraviolet radiation C. slew rate D. open-loop gain
D. opaque to the infrared radiation
40. The addition of impurity in extrinsic semiconductor is about
26. The primary reason for the widespread use of Si in 1 part in 108 parts.
semiconductor device technology is A. True B. False
A. abundance of Si on the surface of earth
41. Hall effect can be used
B. larger band gap of Si in comparison to Ge
A. to find type of semiconductor (whether p or n)
C. favourable properties of Silicon-dioxide (SiO2)
B. to find carrier concentration
D. lower melting point
C. to measure conductivity
27. If the conductivity of pure germanium is 1.54 D. all of the above
siemens/metre, its resistivity in ohm-metre will be nearly
42. The v-i characteristic of an element is shown in below
A. 65 B. 6.5 C. 0.65 D. 0.065
figure the element is
28. Reluctivity is analogous to
A. permeability B. conductivity
C. resistivity D. retentivity
29. The v-i characteristics of a diode may be linear or non

linear. A. non-linear, active, non-bilateral
A. True B. False B. linear, active, non-bilateral
C. non-linear, passive, non-bilateral
30. If a coil has diameter 'd' number of turns 'N' and form factor D. non-linear, active, bilateral
F then the inductance of the coil is proportional to
A. N2dF B. Nd2F 43. Diffusion constants Dp, Dn mobility μp, μn and absolute
C. D. temperature T are related as (Pics)
Page 15
4. In which of the following case the rating of the transformer to
A. B. deliver 100 watts of d.c. power to a load, will be least?
A. Half wave rectifier
C. D.
B. Full wave rectifier
44. The probability giving distribution of electrons over a range C. Bridge type full wave rectifier
of allowed energy levels is known as D. Three phase full wave rectifier
A. Maxwell's Distribution
5. When a p-n Junction is forward biased
B. Fermi-Dirac Distribution
A. the current flow is due to electrons only
C. Richardson Dushman Distribution
B. the majority carriers in both p and n materials are
driven toward the junction.
45. Hall coefficient is reciprocal of charge density. C. the majority carriers in both p and n materials are away from
A. True B. False the junction.
D. both (a) and (c).
46. It is required to trace the output characteristics of a CE
bipolar transistor on a CRO screen. The proper method is 6. In a JFET, the drain current is maximum when
A. apply the voltage drop across collector resistance to Y A. VGS = 0
input, disconnect sweep generator and apply VCE to X B. VGS is not zero but is slightly negative
input C. VGS is negative
B. apply voltage drop across collector resistance to Y input D. VGS is negative and equal to VDS
C. apply VCE to X input
7. A potential difference is developed across a current carrying
D. apply VCE to Y input, disconnect the sweep generator and
metal strip when the strip is placed in a transverse magnetic
apply voltage drop across collector resistance to X input
field. The above effect is known as
47. Atomic number of germanium is A. Fermi's effect B. Photo electric effect
A. 24 B. 28 C. 32 D. 36 C. Joule's effect D. Hall's effect
48. The resistivity of ferrites is 8. In a zener diode

A. very much lower than that of the ferromagnetic metals A. forward voltage rating is high
B. slightly lower than that of the ferromagnetic materials B. negative resistance characteristics exists
C. slightly higher than that of the ferromagnetic metals C. sharp breakdown occurs at low reverse voltage
D. very much higher than that of the ferromagnetic metals D. none of the above
49. A JFET 9. Which one of the following bipolar transistors has the highest
A. is current controlled device current gain bandwidth Product (fr) for similar geometry?
B. has low input resistance A. NPN germanium transistor
C. has high gate current B. NPN silicon transistor
D. is a voltage controlled device C. PNP germanium transistor
D. PNP silicon transistor
50. In monostable multivibrator
A. has no stable state 10. The depletion layer across a P+ n junction lies
B. has one stable state A. mostly in the P+ region--
C. has two stable states B. mostly in n region
D. switches automatically from one state to other state C. equally in both the P+ and n-region
D. entirely in the P+ region
1. Assertion (A): Hall effect is used to find the type of 11. An increase of reverse voltage decreases the junction
semiconductor. Reason (R): When a specimen of capacitance.
semiconductor carrying current I lies in a magnetic field the A. True B. False
force on electrons and holes is in opposite directions.
12. The maximum forward current in case of signal diode is in
the range of
A. 1 A to 10 A B. 0.1 A to 1 A
C. few milli amperes D. few nano amperes
13. On which of the following effect do thermocouples work?
A. Thomson effect B. Seebeck effect
2. The fT of a BJT is related to its gm, Cp and Cμ as follows.
C. Peltier effect D. Joule effect
A. B.
14. Which of the following constitutes an active component?
A. Semiconductor device B. Resistors
C. D.
C. Capacitors D. Inductors
3. When a p-n junction is forward biased. The width of 15. Which of the following characteristics of a silicon p-n
depletion layer decreases. junction diode make it suitable for use as ideal diode?
A. True B. False •It has low saturation current.
•It has high value of cut in voltage.
•It can withstand large reverse voltage.
Page 16
•When compared with germanium diode, silicon diode shows a 26. An intrinsic semiconductor (intrinsic electron density = 1016
lower degree of temperature dependence under reverse m-3) is deped with donors to a level of 1022 m-3. What is the
conditions. hole density assuming all donors to be ionized?
Select the answer using the given below A. 10⁷ m-³ B. 10⁸ m-³ |
A. 1 and 2 B. 1, 2, 3, 4 . 10¹⁰ m-³ D. 10⁶ m-³
C. 2, 3, 4 D. 1, 3
27. The capacitor filter provides poor voltage regulation
16. Resistivity of carbon is around because
A. 10 to 70 m-ohm-cm B. 80 to 130 m-ohm-cm A. the increase in ripple with load current causes a
C. 800 to 1300 m-ohm-cm D. 8000 to 13000 m-ohm-cm decrease in average voltage
B. the increase in ripple with load current causes a increase in
17. Which of the following is anti-ferromagnetic material? average voltage
A. CrSb B. NIO C. MnO D. All of the above C. filter promotes ripple at peak voltage
18. Assertion (A): The capacitance of a reverse biased pin
diode is lower than that of reverse biased p-n diode. Reason 28. If Vr is the reverse voltage across a graded P-N Junction,
(R): A PIN diode has an intrinsic layer between p and n then the junction capacitance cj is proportional to
regions. A. (Vr)^2 B. (Vr)^n C. (Vr)^-n D. (Vr)^3/2
B. Both A and R are true but R is not a correct explanation of A 29. In the schematic representation of bipolar junction
transistor, the direction of arrow shows the direction of flow of
C. A is true but R is false A. holes
D. A is false but R is true B. electrons
C. holes in pnp and electrons in npn
19. In the saturation region of CE output characteristics of n-p- D. electrons in pnp and holes in npn
n transistor, VCE is about
A. 0.5 V B. 15 V C. - 0.5 V D. - 15 V 30. Conductivity σ, mobility μ and Hall coefficient KH are
related as
20. In n channel JFET A. μ = σKH B. σ = μKH
A. ID and VDS are positive but VGS is negative C. KH = μσ D. KH =(μσ)1.1
B. ID and VGS are positive but VDS is negative
C. VDS and VGS are positive but ID is negative 31. The forbidden band in semiconductors is of the order of
D. ID, VDS and VGS are all positive A. 6 eV B. 1 eV C. 10 eV D. 0.01 eV
21. Figure represents a 32. For an P-N-P transistor in normal operation its junction are
biased as
A. emitter base : reverse, collector base : forward
B. emitter base : forward, collector base : reverse
A. Esaki diode B. Triac C. emitter base : forward, collector base : forward
C. Varactor D. Gunn diode D. emitter base : reverse, collector base : reverse
22. Almost all resistors are made in a monolithic integrated 33. A FET is to be operated as voltage variable resistor. For
circuit this drain to source voltage VDS should be,
A. during the entire diffusion A. 74 B. = VP C. < VP D. > VP
B. while growing the epitaxial layer
C. during the base diffusion 34. Assertion (A): FET has characteristics very similar to that of
D. during the collector diffusion pentode. Reason (R): Both FET and pentode are voltage
controlled devices.
23. The forbidden energy gap for silicon is A. Both A and R are true and R is correct explanation of A
A. 0.12 eV B. 1.12 eV B. Both A and R are true but R is not a correct explanation of A
C. 0.72 eV D. 7.2 eV
24. In energy band diagram of n type semiconductor, the donor D. A is false but R is true
energy level is
A. in valence band 35. The current gain of a bipolar transistor drops at high
B. in conduction band frequencies because of
C. slightly above valence band A. transistor capacitance
D. slightly below conduction band B. high current effects in the base
C. parasitic inductive elements
25. For an n-channel JEFT having drain source voltage D. the early effect
constant if the gate source voltage is increased (more
negative) pinch off would occur for 36. In an intrinsic semiconductor, the intrinsic charge
A. high values of drain current concentration at any absolute temperature T is proportional to
B. saturation values of drain current A. T B. T² C. T³ D. T⁴
C. zero drain current
D. gate current equal to the drain current 37. The conductivity of an intrinsic semiconductor is (symbols
have the usual meanings).
A. generally less than that a doped semiconductor
Page 17
B. σi = eni (μn - μp) C. tin oxide resistors
C. σi = eni (μn + μp) D. metal film resistors
D. σi = ni (μn - μp)
48. For a BJT, under the saturation condition,
38. The current due to thermionic emission is proportional to A. IC = βIB
A. T B. T² C. T³ D. T⁴ B. IC = aIB
C. IC is independent of all other parameters
39. For radiating ultraviolet rays, LEDs use D. IC < βIB
A. zinc sulphide B. gallium arsenide
C. gallium phosphide D. none of the above 49. When a semiconductor bar is heated at one end, a voltage
across the bar is developed. If the heated is positive the
40. Addition of a small amount of antimony to germanium will semiconductor is
result in A. P-type B. n-type
A. formation of p-type semiconductor C. intrinsic D. highly degenerate
B. more free electrons than holes in semiconductor
C. antimony concentrating on the edges of the crystal ELECTRONIC DEVICES AND CIRCUITS (section9)
D. increased resistance
1. The O/P char, of a FET is given in the figure. In which region
41. Consider the following statements about conditions that is the device biased for small signal amplification?
make a metal semiconductor contact rectifying
•N type semiconductor with work function φs more than work
function φM of metal
•N type semiconductor with work function φs less than work
•P type semiconductor with work function φs more than work
•P type semiconductor with work function φs less than work A. AB B. BC C. CD D. BD
function φM of metal.
Of these statements 2. Photoelectric effect occurs only in semiconductors and not in
A. 1 and 3 are correct B. 2 and 3 are correct metals.
C. 1 and 4 are correct D. 2 and 4 are correct A. True B. False
42. Silicon diodes have ________ reverse resistance than 3. Which of these has peak and valley points in v-i curve?
germanium diodes. A. Tunnel diode B. Zener diode
A. a much smaller B. a much larger C. PIN diode D. Schottky diode
C. an infinite D. a negligible
4. The scaling factor of an MOS device using constant voltage
43. The kinetic energy of photoelectrons emitted by a photo scaling model, the gate area of the device will be scaled as
sensitive surface depends on A. 1/a B. 1/a² C. 1/a³ D. 1/a⁴
A. intensity of the incident radiation
5. A full wave bridge rectifier is supplied voltage at 50 Hz. The
B. wavelength of the incident radiation
lowest ripple frequency will be
C. surface conditions of the surface
A. 400 Hz B. 200 Hz
D. angle of incidence of radiation
C. 100 Hz D. 50 Hz
44. When reverse bias is applied to a junction diode
6. Electric breakdown strength of a material depends on its
A. minority carrier current is increased
A. composition B. moisture content
B. majority carrier current is increased
C. thickness D. all of the above
C. potential barrier is lowered
D. potential barrier is raised 7. The atomic weight of an atom is determined by
A. the number of protons
45. Which of the following statements regarding two transistor
B. the number of neutrons
model of p-n-n-p device is correct?
C. the number of protons and neutrons
A. It explain only the turn on portion of the device
D. the number of electrons and protons
characteristics
B. It explain only the turn off portion of the device 8. The minimum charge carried by an ion is
characteristics A. zero
C. It explain only the negative region portion of the device B. equal to the change of an electron
characteristics C. equal to the change of a pair of electrons
D. It explain all the regions of the device characteristics D. equal to the change of electrons left in the atom
46. Highest resistivity of the following is 9. In intrinsic semiconductor at 300 K, the magnitude of free
A. nichrome B. constantan electron concentration in silicon is about
C. metal D. manganin A. 15 x 10⁴ per cm³ B. 5 x 10¹² per cm³
C. 1.45 x 10¹⁰ per cm³ D. 1.45 x 10⁶ per cm³
47. Lowest noise can be expected in case of
A. carbon composition resistors 10. EG for silicon is 1.12 eV and that for germanium is 0.72 eV.
B. carbon film resistors Therefore it can be concluded that
Page 18
A. more number of electron-hole pairs will be generated in 19. The mean life time of the minority carriers is in the range of
silicon than in germanium at room temperature a few
B. less number of electron hole pairs will be generated in A. seconds B. milli seconds
silicon than in germanium at room temperature-- C. micro seconds D. nano seconds
C. equal number of electron-hole pairs will be generated in
both at lower temperatures 20. Choose the correct match for input resistance of various
D. equal number of electron-hole pairs will be generated in amplifier configurations shown below configuration.
both at higher temperatures CB : Common Base LO : Low
CC : Common Collector MO : moderate
11. A long specimen of P type semiconductor material CE : Common Emitter HI: High
A. is + vely charged A. CB-LO, CC-MO, CE-HI
B. is electrically neutral B. CB-LO, CC-HI, CE-MO
C. has an electric field directed along its length C. CB-MO, CC-HI, CE-LO
D. acts as a dipole D. CB-HI, CC-LO, CE-MO
12. For BJT, under saturation condition 21. The resistivity of a semiconductor
A. IC = βIB A. increases as the temperature increases
B. IC > bIB B. decreases as the temperature increases
C. IC is independent of all other parameters C. remains constant even when temperature varies
D. IC < βIB D. none of the above
13. An inductor filter has a ripple that ________ with load 22. The voltage at which Avalanche occurs is known as
resistance and consequently is used only with relatively A. cut in voltage B. barrier voltage
________ load currents. C. breakdown voltage D. depletion voltage
A. decreases, low B. decreases, high
C. increases, low D. increases, high 23. If the energy gap of a semiconductor is 1.1 eV, then it
would be
14. In a JFET A. opaque to visible light
A. the source gate junction is forward biased and gate drain B. transparent to visible light
junction is reverse biased C. transparent to ultraviolet radiation
B. both the junctions are forward biased D. transparent to infrared radiation
C. both the junctions are reverse biased--
D. the source gate junction is reverse biased and gate drain 24. In intrinsic semiconductor the increase in conductivity per
junction is forward biased degree increase in temperature is about
A. 2% B. 6% C. 15% D. 25%
15. Introducing a resistor in the emitter of a common amplifier
stabilizes the d.c. operating point against variations in 25. The ripple factor for a bridge rectifier is
A. only the temperature B. only β of the transistor A. 0.406 B. 1.21 C. 1.11 D. 2.22
C. both temperature and β D. none of these
26. Which of the following semi-conductor has forbidden
16. Consider the following statement S1 and S2. energy gap less 1 eV?
S1: The β of a bipolar transistor reduces if the base width is A. Sulphur B. Phosphorous
increased. C. Germanium D. Carbon
S2: the β of a bipolar transistor increases if the doping
concentration in the base is increased 27. In the vacuum diode equation ib = keb1.5, the current is
Which one of the following is correct? A. temperature limited current
A. S1 is False, S2 is true B. S1 and S2 both are true B. space charge limited current
C. any of the above
C. S1 and S2 both are false D. S1 is true, S2 is false D. none of the above
17. Assertion (A): A BJT can be used as a switch. 28. Thermosetting polymers are
Reason (R): In forward active mode emitter base junction is A. injection moulded B. extruded
forward biased and base collector junction is reverse biased. C. cast moulded D. none of the above
29. Which of these is used in seven segment display?
A. PIN diode B. LED
of A
C. Photo diode D. Tunnel diode
D. A is false but R is true 30. The current in a p-n junction diode with V volts applied in p
region relative to n region (where I0 is reverse saturation
18. The concentration of minority carriers in an extrinsic
current, m is ideality factor, k is Boltzmann's constant, T is
semiconductor under equilibrium is
absolute temp and q is charge on electron) is
A. directly proportional to the doping concentration
A. I0 (e^-qV/mkT - 1) B. I0 e^-qV/mkT
B. inversely proportional to doping concentration
C. I0 (e^qV/mkT) D. I0 (e^qV/mkT - 1)
C. directly proportional to intrinsic concentration
D. inversely proportional to the intrinsic concentration 31. In the BJT amplifier shown in the figure is the transistor is
biased in the forward active region. Putting a capacitor across
RE will
Page 19
41. The turn off time of a bipolar transistor is about
A. 0.5 ns B. 10 ns
C. 70 ns D. 150 ns
42. Hystresis loss least depends on

A. frequency B. magnetic field intensity
A. decrease the voltage gain and decrease the I/P impedance C. volume of the material D. grain orientation of material
B. increase the voltage gain and decrease the I/P
43. In a bipolar transistor, emitter efficiency is about
impedance
A. 0.99 B. 0.9 C. 0.8 D. 0.7
C. decrease the voltage gain and Increase the I/P impedance
44. For signal diodes the PIV rating is usually in the range
32. In a centre tap full wave rectifier, 50 V is the peak voltage
A. 1 V to 10V B. 10 V to 30V
between the centre tap and one of the ends of the secondary.
C. 30 V to 150V D. 150 V to 400V
The maximum voltage across the reverse biased diode will be
A. 100 V B. 72 V 45. The potential of suppressor grid (with respect to cathode) is
C. 50 V D. 38 V usually
A. zero B. negative
33. Consider the following statements. The functions of an
C. positive D. zero or positive
oxide layer in an IC device is to
•mask against diffusion or ion implant 46. In n type semiconductor, the free electron concentration
•insulate the surface electrically A. is nearly equal to density of donor atoms
•increase the melting point of silicon B. is much greater than density of donor atoms
•produce a chemically stable protective layer of these C. is much less than density of donor atoms
statements. D. may be equal to or more or less than density of donor atoms
A. 1, 2, 3 B. 1, 3, 4
C. 2, 3, 4 D. 1, 2, 4 47. If both emitter base and collector base junctions of a BJT
are forward biased, the transistor is in
34. The forbidden energy gap for germanium is A. active region B. saturated region
A. 0.12 eV B. 0.32 eV C. cut off region D. inverse mode
C. 0.72 eV D. 0.92 eV
48. Which of the following can be operated with positive as well
35. If the gate of JFET is reverse biased, the width of depletion as negative gate voltage?
region A. JFET B. Both JFET and MOSFET
A. becomes zero B. is uniform C. MOSFET D. Neither JFET nor MOSFET
C. is more near the source D. is more near the drain
49. The reverse breakdown voltage of a diode depends on the
36. If the atomic number of germanium is 32, the number of extent of doping.
electrons in the outer most shell will be A. True B. False
A. 2 B. 3 C. 4 D. 6
37. Dielectric loss due to polarisation occurs in of
A. bipolar dielectrics B. non-metallic dielectrics A. mobility of charge carriers
C. liquid dielectrics D. all of the above B. type of the conductivity and concentration of charge
carriers
38. A metal loses electrons at room temperature.
C. temperature coefficient and thermal conductivity
A. True B. False
D. fermi level and forbidden energy gap
39. Figure shows small signal common base transistor
circuit.The current source I and resistor R on the output side
are 1. At a P-N junction, the potential barrier is due to the charges
on either side of the junction, which consists of
A. fixed donor and acceptor ions
B. majority carriers only
C. minority carriers only
A. ie and re B. ie and (1 - a)re
D. both majority and minority carriers
C. (1 - a)ie and (1 - a)re D. a ie and re
2. In a vacuum triode μ = rpgm.
40. Consider the following statement associated with bipolar A. True B. False
junction transistor and JFET
•The former has higher input impedance than the later 3. The material which has zero temperature coefficient of
•The former has higher frequency stability than the later resistance is
•The later has lower noise figure than the former A. manganin B. porcelain
•The later has higher power rating than the former. C. carbon D. aluminium
Of these statements
A. 1 and 2 are correct B. 2 and 3 are correct 4. When the light falling on a photodiode increases, the reverse
C. 3 and 4 are correct D. 1 and 4 are correct minority current
Page 20
A. increases B. increases or decreases 17. With increasing temperature, the electrical conductivity of
C. decreases D. remains the same metals
A. increases B. decreases
5. When a ferromagnetic substance is magnetised, small C. increases first and then decreases D. remains unaffected
changes in dimensions occur. Such a phenomenon is known 18. The reverse saturation current in a semiconductor diode
as consists of
A. magnetic hystresis B. magnetic expansion A. avalanche current
C. magneto striction D. magneto calorisation B. zener current
C. minority carrier current
6. As the temperature of an intrinsic semiconductor material is D. minority carrier current and surface leakage current
increased
A. protons get excited 19. The current gain of a transistor is the ratio of
B. neutrons acquire charge A. emitter current to base current
C. energy of the atom is increased B. emitter current to collector current
D. additional holes are created in the conduction band C. collector current to base current
D. collector current to emitter current
7. In an insulated gate FET, the polarity of inversion layer is the
same as that of 20. If a sample of Ge and a sample of Si have the same
A. minority carriers in source impurity density are kept at room temperature
B. majority carriers in source A. both will have equal value of resistivity
C. charge on gate electrode B. both will have equal - ve of resistivity
D. minority carriers in drain C. resistivity of germanium will be higher than that of silicon
D. resistivity of silicon will be higher than of Ge
8. Hall effect can be used to find the type of semiconductor.
A. True B. False 21. Varactor diode is forward biased when it is used.
A. True B. False
9. The conductivity of germanium increases by about 6 percent
per degree increase in temperature. 22. A good ohmic contact on a P-type semiconductor chip is
A. True B. False formed by introducing
A. gold as an impurity below the contact
10. The range of visible light is B. high concentration of donors below the contact
A. 300 to 2000 Å B. 200 - 4000 Å C. high concentration of acceptors below the contact
C. 4000 to 7700 Å D. more than 10000 Å D. thin insulator layer between the metal and semiconductor
11. Higher value of ripple factor indicates 23. The impurity added to extrinsic semiconductor is of the
A. poor rectification order of
B. ideal rectification A. 1 in 100 B. 1 in 1000
C. r.m.s. value to peak value C. 1 in 100, 0000 D. 1 in 100, 000, 000
24. For a BJT, avalanche multiplication factor depends on
12. When a semi-conductor is doped, its electrical conductivity A. VCE B. VCB
A. increases C. VBE D. none
B. decreases in the direct ratio of the doped material
C. decreases in the inverse ratio of the doped material 25. The impurity commonly used for realizing the base region
D. remains unaltered of a n-p-n transistor is
A. gallium B. indium
13. The conduction band is C. boron D. phosphorus
A. same as forbidden energy gap
B. generally located on the top of the crystal 6. Assertion (A): In CE connection of n-p-n transistor. VCE is
C. generally located on the bottom of the crystal positive. Reason (R): In BJT, the base collector junction is
D. a range of energies corresponding to the energies of reverse biased.
the free electrons A. Both A and R are true and R is correct explanation of A
14. If an additional two diodes were used to connect the 1 kW
load across a bridge rectifier circuits, utilizing the full secondary C. A is true but R is false
of the transformer, how much d.c. power could be delivered D. A is false but R is true
using a transformer with the rating of 105 VA?
A. 35 W B. 60 W 27. Assertion (A): Tunnel diode is used in many pulse and
C. 85 W D. 100 W digital circuits. Reason (R): The v-i curve of a tunnel diode
resembles letter 'N'.
15. In an n channel JFET, VGS = VGS(off). Then A. Both A and R are true and R is correct explanation of A
A. ID is zero B. ID may be zero or positive B. Both A and R are true but R is not a correct explanation of A
C. ID is positive D. ID may be zero or negative
16. In a bipolar transistor which current is smallest
A. collector current B. base current
C. emitter current D. any of the three currents 28. In ferromagnetic materials
A. the atomic magnetic moments are antiparallel and unequal
Page 21
B. the atomic magnetic moments are parallel 40. In a triode
C. the constituent is iron only A. grid is nearer to cathode than anode
D. one of the constituents is iron B. grid is nearer to anode than cathode
C. grid is equidistant from anode and cathode
29. Which one of the following circuits is most suitable as an D. any of the above
oscillator at a frequency of 100Hz?
A. Hartley oscillator B. Colpitts oscillator 41. The output characteristics of a bipolar transistor has three
C. Crystal oscillator D. Twin-T oscillator distinct regions. They are known as
A. saturation region, active region and breakdown region
30. The conductivity of an intrinsic semiconductor is B. inactive region, active region and breakdown region
A. generally less than that of a doped semiconductor C. inactive region, saturation region and active region
B. given by σ1 = eni (μn - μp) D. inactive region, saturation region and breakdown region
C. given by σ1 = eni (μp + μn)
D. given by σ1 = ni (μn + μp) 42. Assertion (A): In a BJT, adc is about 0.98. Reason (R): In a
BJT, recombination in base region is high.
31. Which of the following materials has the highest electrical A. Both A and R are true and R is correct explanation of A
conductivity? B. Both A and R are true but R is not a correct explanation of A
A. Steel B. Silver
C. Aluminium D. Zinc C. A is true but R is false
32. In a bipolar transistor
A. the base is thick and highly doped 43. Wienbridge oscillator uses
B. the base is thin and highly doped A. -ve feedback B. +ve feedback
C. the base is thick and lightly doped C. both +ve, -ve feedback D. feedback is not required
D. the base is thin and lightly doped
44. Which of the following material is preferred for transformer
33. Hay bridge is suitable for measuring inductance of which cores operating in micro wave frequency range?
one of the following inductors? A. Ferrites B. Silicon steel
A. Having Q value less than 10 C. Superalloy D. Copper
B. Having Q value greater than 10
C. Having any value of Q 45. The ac resistance of a forward biased p-n junction diode
D. Having phase angle of reactance very large operating at a bias voltage V and carrying current 'I' is
A. 0
34. When a substance is repelled by a magnetic field it is B. constant value independent of V and I
known as
A. ferromagnetic B. antiferromagnetic C.
C. diamagnetic D. paramagnetic
D.
35. If μn is mobility of free electron and μp is mobility of holes
then for silicon at 300 K 46. Photoelectric emitters in photo tubes are generally made of
A. μn = μp
B. μn > μp A. alkali metals B. metals
C. μn < μp C. semiconductors D. metal and semiconductors
D. μn may be more or less than μp
47. Assertion (A): Power transistors are more commonly of
36. In a specimen of n type semiconductor, the initial silicon npn type. Reason (R): The fabrication of silicon npn
concentration of holes and electrons is pno and nno. When the transistors is easy.
specimen is subjected to radiation, the hole and electron A. Both A and R are true and R is correct explanation of A
concentration increase to pn and nn. Then B. Both A and R are true but R is not a correct explanation of A
A. pn - pno = nn - nno B. pn + pno = nn + nno
C. pn - pno = nno + nno D. pn + pno = nn - pno C. A is true but R is false
37. Which of the following diode is designed to operate in the
breakdown region? 48. In N-type semiconductor
A. Signal diode B. Power diode A. electrons are majority carriers while holes are minority
C. Zener diode D. None of the above carriers
B. electrons are majority carriers while holes are majority
38. Fill in the suitable word in the blanks is the following carriers
questions. The electron in the outermost orbit is called C. both electrons as well as holes are majority carriers
________ electron. D. both electrons as well as holes are minority carriers
A. valence B. covalent
C. acceptor D. donor 49. The addition of n type impurity to intrinsic material creates
allowable energy levels.
39. A silicon diode is forward biased and total applied voltage A. slightly below conduction band
is 5 V. The voltage across p-n junction is B. slightly above conduction band
A. 5 V B. Slightly less than 5 V C. slightly below valence band
C. 0.7 V D. 0 D. slightly above valence band
Page 22
50. Which of the following elements act as donor impurities? 11. Before doping the semiconductor material is
•Gold A. dehydrated B. heated
•Phosphorus C. hardened D. purified
•Boron
•Antimony 12. The atomic number of silicon is 14. It can be therefore
•Arsenic concluded that
•Indium A. a silicon atom contains 14 protons
Select the correct answer using the codes given below: B. a silicon atom contains 14 neutrons
A. 1, 2, 3 B. 1, 2, 4, 6 C. a silicon atom contains 14 electrons
C. 3, 4, 5, 6 D. 2, 4, 5 D. all of the above
ELECTRONIC DEVICES AND CIRCUITS (section11) 13. X-rays cannot penetrate through a thick sheet of
A. wood B. paper
1. The depletion layer in a reverse biased p-n junction is due to C. lead-- D. aluminium
the presence of
A. electrons B. holes 14. Ohmic range of metal film resistors is
C. both electrons and holes D. immobile ions A. 1 to 100 ohms B. 10 to 1 K ohms
C. 100 to 1 M ohms D. 100 to 100 M ohms
2. Which materials find application in MASER?
A. Diamagnetic B. Paramagnetic 15. The current density J, free electron mobility μn, hole
C. Ferromagnetic D. Ferrimagnetic mobility μp , magnitude of free electron and hole concentration
ni electric field E and charge on electron e, in intrinsic
3. An electrically neutral semiconductor has semiconductor are related as
A. no free charges A. J = (μn + μp)eniE B. J =
B. no majority carriers
C. J = D. J =
C. no minority carriers
D. equal number of positive and negative charges—
16. In order to achieve good stabilization in potential divider
method current I1 through R1 and R2 should be
4. Magnetic recording tape is most commonly made from
A. I1 > 20 IB B. I1 > 15 IB
A. small particles of iron B. silicon iron
C. I1 < 5 IB D. I1 > 10 IB
C. ferric-oxide D. silver nitrate
17. A sample of N type semiconductor has electron density of
5. The circuit shown in the figure is best described as a (Pic)
6.25 x 108/cm2 at 300 K. If the intrinsic concentration of
carriers in this sample is 2.5 x 1013/cm3 at this temperature,
the hole density works out to be
A. 10⁶/cm³ B. 10⁸/cm³
C. 10¹⁰/cm³ D. 10¹²/cm³
A. bridge rectifier B. ring modulator
C. frequency discriminator D. voltage doubler 18. Addition of 0.3 to 3.5% silicon to iron
A. increases the electrical resistivity of iron
6. Gold is often diffused into silicon P-N junction devices to B. decreases the electrical resistivity of iron
A. increase recombination rate C. does not change electrical resistivity of iron
B. reduce recombination rate D. silicon can't be added with iron
C. make silicon a direct gap semiconductor
D. make silicon semimetal 19. A bistable multivibrator
A. has no stable state B. has one stable state
7. In a solar cell, the photovoltaic voltages is the voltage at C. has two stable state D. none of the above
which the resultant current is
A. positive B. zero 20. Transconductance indicates the
C. negative D. rated current A. control of output voltage by input voltage
B. control of output current by input voltage
8. The forbidden energy gap between the valence band and C. control of input voltage by output current
conduction band will be wide in case of D. control of input current by input voltage
A. semiconductors B. all metals
C. good conductors of electricity D. insulators 21. In n channel JFET, the gate voltage is made more negative
9. At 0 K the forbidden energy gap in intrinsic semi conductor is A. the channel width will increase
about B. the channel width will decrease
A. 10 eV B. 6 eV C. the channel width and drain current will decrease
C. 1 Ev D. 0.2 eV D. the channel width will decrease and drain current will
increase
10. The resistance of a metallic wire would
A. increase as the operating frequency increase 22. Metals approach superconductivity conditions
B. decrease as the operating frequency increase A. near absolute zero temperature
C. remain unaffected on increasing the operating frequency B. near critical temperature
D. first increase then decrease C. at triple point
D. under the conditions of high temperature and pressure
Page 23
23. The phenomenon known as "Early effect" in a BJT refers to 34. In standard TTL, the 'totem pole' stage refers to
a reduction of the effective base width caused by A. the multi-emitter I/P stage
A. electron-hole recombination at the base B. phase splitter
B. reverse biasing of the base collector junction C. the O/P buffer
C. forward biasing of emitter base junction D. open collector O/P stage
D. the early removal of stored base charge during saturation to
cut off switching 35. In p type semiconductor, the hole concentration
A. is nearly equal to density of acceptor atoms
24. At absolute zero temperature a semiconductor behaves like B. is much greater than density of acceptor atoms
C. is much less than density of acceptor atoms
A. an insulator B. a super conductor D. may be equal to or more or less than density of acceptor
C. a good conductor D. a variable resistor atoms
25. In a 741 OP-amp, there is 20 dB/decade fall-off starting at 36. If 100 V is the peak voltage across the secondary of the
a relatively low frequency. This is due to transformer in a half-wave rectifier (without any filter circuit),
A. applied load B. internal compensation then the maximum voltage on the reverse-biased diode is
C. impedance of the source D. power dissipation in the chip A. 200 V B. 141.4 V
C. 100 V D. 86 V
26. Which of the following material can be used in cable
shields? 37. The O/P Power of a power amplifier is several times its
A. Copper B. Aluminium input power. It is possible because
C. Cast iron D. Lead A. power amplifier introduces a -ve resistance
B. there is +ve feed back in the circuit
27. The charge of an electron is C. step up transformer is use in the circuit
A. 1.6 x 10-¹⁷ coulomb B. 1.6 x 10-¹⁹ coulomb D. power amplifier converts a part of I/P d.c. power into
C. 1.6 x 10-²¹ coulomb D. 1.6 x 10-²³ coulomb a.c. power
28. The on voltage and forward breakover voltage of an SCR 38. In p type semiconductor holes are majority carriers.
depend on A. True B. False
A. gate current alone
B. band gap of semiconductor alone 39. Due to the formation of Schottky defects the density of the
C. gate current and semiconductor band gap respectively crystal
D. semiconductor band gap and gate current respectively A. increases slightly B. increases appreciably
C. decreases slightly D. decreases appreciably
29. EG for silicon is 1.12 eV and that for germanium is 0.72 eV.
Therefore, it can be concluded that 40. The band gap of silicon at 300K is
A. the conductivity of silicon will be less than that of A. 1.36 eV B. 1.10 eV
germanium at room temperature C. 0.80 eV D. 0.67 eV
B. the conductivity of silicon will be more than that of
germanium at room temperature 41. The current due to thermionic emission is given by
C. the conductivity of two will be same at 60°C Richardson Dushman equation.
D. the conductivity of two will be same at 100°C A. True B. False
30. Assertion (A): The resistivity of intrinsic semiconductor 42. The thermionic emission current is given by
decreases with increase in temperature. Reason (R): The A. Fermi-Dirac distribution B. Maxwell's equation
forbidden gap decreases with increase in temperature. C. Richardson Dushman equation D. Langmuir Child law
B. Both A and R are true but R is not a correct explanation of A 43. In forward active region, the operation of a BJT
A. both junctions are forward biased
C. A is true but R is false B. both junctions are reverse biased
D. A is false but R is true C. emitter base junction is forward biased and base
collector junction is reverse biased
31. Typical value of reverse current in a semiconductor diode is D. emitter base junction is reverse biased and base collector
A. 1 A B. 0.1 A C. 1 μA D. 0.1 μA junction is reverse biased
32. Which of the following element has four valence electrons? 44. The conductivity of a semiconductor crystal due to any
A. Silicon B. Germanium current carrier is not proportional to
C. Both (a) and (b) above D. None of the above A. mobility of the carrier
B. effective density of states in the conduction band
33. In a transistor operating in forward active mode C. electronic charge
A. depletion layer between emitter and base is thin and that D. surface states in the semiconductor
between base and collector is also thin
B. both depletion regions are thick 45. A P-N junction diode dynamic conductance is directly
C. depletion layer between emitter and base is thin and proportional to
that between base and collector is thick A. the applied voltage B. the temperature
D. depletion layer between emitter and base is thick and that C. its current D. thermal voltage
between base and collector is thin
Page 24
46. The Ni-Zn ferrites are used for audio and TV transformers A. boron B. indium
is that C. gallium D. arsenic
A. they have large saturation magnetisation
B. they are easy to fabricate by rolling 11. What is the function of silicon dioxide layer in MOSFETS?
C. they are free from pores and voids A. To provide high input resistance
D. they have high electro-resistivity B. To increase current carriers
C. To provide high output resistance
47. Hall's effect can be used to measure D. Both (a) and (c)
A. magnetic field intensity B. average number of holes
C. carriers concentration D. electrostatic field intensity 12. The modulation of effective base width by collector voltage
is known as Early effect, hence reverse collector voltage
48. For insulators the energy gap is of the order of A. increases both a and β
A. 0.1 eV B. 0.7 eV B. decrease both a and β
C. 1.1 eV to 1.2 eV D. 5 to 15 eV C. increase a but decrease β
D. decrease a but increase β
49. When electronic emission occurs due to bombardment of
high velocity electrons on a metal surface, it is called 13. Assertion (A): In intrinsic semiconductors, the charge
secondary emission. concentration increases with temperature. Reason (R): At
A. True B. False higher temperatures, the forbidden energy gap in
semiconductors is lower.
50. The reverse saturation current depends on the reverse A. Both A and R are true and R is correct explanation of A
bias. B. Both A and R are true but R is not a correct explanation of A
A. True B. False
ELECTRONIC DEVICES AND CIRCUITS (section12) D. A is false but R is true
1. One electron volt is equivalent to
A. 1.6 x 10-¹⁰ joule B. 1.6 x 10-¹³ joule 14. Covalent bond energy in Germanium is approximately
C. 1.6 x 10-¹⁶ joule D. 1.6 x 10-¹⁹ joule A. 3.8 eV B. 4.7 eV
C. 7.4 eV D. 12.5 eV
2. Resistivity of electrical conductors is most affected by
A. Pressure B. temperature 15. Which is correct for a vacuum triode?
C. composition D. ageing A. μ = rpgm B. rp = μgm
C. gm = μrp D.√rpgm
3. Wiedemann-Franz law correlates
A. electrical and thermal conductivities 16. A 2 bit binary multiplier can be implemented using
B. electron arrangement in shells A. 2 I/P only
C. temperature and photo electric emission B. 2 I/P XORs and 4 I/P and gates only
D. all of the above C. two 2 I/Ps NOR and one XNOR gate
D. XOR gates and shift Register
4. In bipolar transistors dc current gain is (Pics)
17. Secondary emission results
A. B. C. D.
A. when temperature of metals is raised to a level above the
crystallization temperature
5. Holes and electrons move in opposite directions.
B. when metals are subjected to strong magnetic fields
A. True B. False
C. when light rays fall on the metal surface
6. The energy of one quantum of light equal to hf. D. when a high velocity beam of electrons strikes as metal
A. True B. False surface
7. For most metals, Fermi level EF is less than 18. Ohmic range of carbon composition resistors is
A. 0.1 eV B. 2 eV A. 10 to 100 ohms B. 10 to 10 K ohms
C. 5 eV D. 10 eV C. 10 to 200 ohms D. 10 to 25 M ohms
8. The spins in a ferrimagnetic material are 19. The depletion layer consists of immobile ions.
A. all aligned parallel A. True B. False
B. partially aligned antiparallel without exactly cancelling out
20. The output V-I characteristics of an Enhancement type
sublattice magnetisation--
MOSFET has
C. randomly oriented
A. only an ohmic region
D. all aligned antiparallel such that the sublattice cancels out
B. only a saturation region
exactly
C. an ohmic region at low voltage value followed by a
9. The permeability of soft iron can be increased by saturation region at higher voltages.
A. purifying it B. reducing carbon percentage D. an ohmic region at large voltage values. Preceded by a
C. alloying with cobalt D. increasing percentage saturation region at lower voltages.
10. All of the following elements have three valence electrons 21. A sample of N-type semiconductor has electron density of
EXCEPT 6.25 x 1018/cm3 at 300k. If the intrinsic concentration of
carriers in this sample is 2.5 x 1013/cm3 at this temperature
the hole density works out to be
Page 25
A. 10⁶/cm³ B. 10⁷/cm³ C. A is true but R is false
C. 10¹⁰/cm³ D. 10¹²/cm³ D. A is false but R is true
22. Mobility is directly proportional to Hall coefficient. 32. The factor n in the equation for calculating current for a
A. True B. False silicon diode is
A. 1 B.
23. n channel FETs are better as compared to p-channel FET 2 C.
because 2.5
A. they are more efficient D. 2 for low levels of current and 1 for high levels of
B. they have high switching time current
C. they have higher input impedance
D. mobility of electrons is more than that of holes 33. An LED is
A. an ohmic device B. a display device
24. An n channel depletion type MOSFET has C. a voltage regulated device D. all of the above
A. lightly doped p substrate and highly doped n source
and drain 34. An enhancement mode MOSFET is on when the gate
B. highly doped p substrate and highly doped n source and voltage is
drain A. zero B. positive
C. highly doped p substrate and lightly doped n source and C. high D. more threshold value
drain
D. lightly doped n substrate and highly doped n source and 35. For the n-type semiconductor with n = NP and P = , the
drain hole concentration will fall below the intrinsic value because
some of the holes
25. In a JFET avalanche breakdown occurs when VDS = 22 V A. drop back to acceptor impurity states.
and VGS = 0. If VGS = -1 V, the avalanche breakdown will B. drop to donor impurity states
occur at C. virtually leave the crystal
A. VDS = 22 V D. recombine with the electrons.
B. VDS more than 22 V
C. VDS equal to or more than 22 V 36. For a junction FET in the pinch off region as the drain
D. VDS less than 22 V voltage is increased, the drain current
A. becomes zero B. abruptly decreases
26. The density of states (i.e. number of states per eV per m3) C. abruptly increases D. remains constant
in the conduction band for energy level E is proportional to
A. √E-- B. E C. E1.5 D. E2 37. To avoid thermal runaway in the design of an analog
circuit, the operating point of the BJT should be such that it
27. A-P type material has an acceptor ion concentration of 1 x satisfies the condition.
1016 per cm3. Its intrinsic carrier concentration is 1.48 x 1010/ A. VCE = 1/2 VCC B. VCE ≤ 1/2VCC
cm. The hole and electron mobilities are 0.05m2/V-sec and C. VCE ≥ 1/2VCC D. VCE ≤ 0.78 VCC
0.13 m2/V-sec respectively calculate the resistivity of the
material 38. For a MOS capacitor fabricated on a P-type semiconductor,
A. 12.5 Ω-cm B. 1.25 Ω-cm strong inversion occurs when
C. 0.125 Ω-cm D. 125 Ω-cm A. surface potential is equal to Fermi potential
B. surface Potential is greater than Fermi potential
28. Resistivity is a property of a semiconductor that depends C. surface potential is - ve and equal to Fermi potential in
on magnitude
A. the atomic weight of the semiconductor D. surface potential is + ve and equal to twice the Fermi
B. the atomic number of the semiconductor potential—
C. the atomic nature of the semiconductor
D. the shape of the semiconductor 39. The primary function of a clamper circuit is to
A. suppress variations in signal voltage
29. Operating point signifies that B. raise +ve half cycle to the signal
A. zero signal IC and VBE B. zero signal IC and VCE C. Lower -ve half cycle of the signal
C. zero signal IB and VCE D. zero signal IC, VCE D. introduce a dc level into an a.c. signal
30. Figure represents a 40. Breakdown in dielectric may be

A. electrical breakdown B. thermal breakdown
C. electrochemical breakdown D. any of the above
A. Tunnel diode B. Zener diode 41. AE 139 is a
C. Photo diode D. Photo sensitive diode A. tunnel diode |
B. germanium power transistor
31. Assertion (A): In n-p-n transistor conduction is mainly due
C. photoconductive cell
to electrons. Reason (R): In n type materials electrons are
D. silicon diode
majority carriers.
A. Both A and R are true and R is correct explanation of A 42. The function off an oxide layer in an IC device is to
B. Both A and R are true but R is not a correct explanation of A •mask against diffusion or ion implantation
•insulate the surface electrically
•increase the melting point of Si
Page 26
•produce a chemically stable protective layer B. to positive terminal of battery
A. 1, 2, 3 B. 1, 3, 4 C. to either positive or negative terminal of battery
C. 2, 3, 4 D. 4, 1, 2 D. none of the above
43. The passage of current in an electrolyte is due to the 5. Piezoelectric materials serves as a source of
movement of A. microwaves B. ultrasonic waves
A. electrons B. molecules C. musical waves D. resonant waves
C. atoms D. ions
6. Which of the following is not a semiconductor?
44. In a CE bipolar transistor operating in active region, A. Silicon B. Calcium arsenide
collector current is independent of C. Germanium D. Zinc sulphide
A. VCE B. IB
C. both VCE and IB D. none of the above 7. At absolute temperature
A. the forbidden energy gap in germanium is higher than that in
45. When a normal atom loses an electron
A. the atom loses one-proton simultaneously silicon
B. rest of the electrons move faster B. the forbidden energy gap in germanium and silicon are
C. the atom becomes a positive ion equal
D. the atom becomes a negative ion C. the forbidden energy gap in silicon is higher than that in
46. The main purpose of using transformer coupling in a class germanium

A amplifier is to make it more D. none of the above
A. efficient B. less costly
C. less bulky D. distortion free 8. If E is electric field intensity, the current density due to field
emission is proportional to
47. The effective channel length of a MOSFET in saturation A. E B. E2 C. E2.5 D. E3/2
decreases with increase in
A. gate voltage B. drain voltage 9. When a high voltage reference is required it is advantageous
C. source voltage D. body voltage to use two or more zener diodes in series to allow
A. higher voltage B. higher dissipation
48. Which of the following element does not have three C. lower temperature coefficient D. all of the above
valence electrons?
A. Boron B. Aluminium 10. Assertion (A): When p-n junction is forward biased, steady
C. Gallium D. Phosphorus current flows. Reason (R): When a p-n junction is forward
biased, free electrons cross the junction from n to p and holes
49. Which of the following is used in the sterilization of water? from p to n.
A. Hydrogen bromide B. Oxygen A. Both A and R are true and R is correct explanation of A
C. Ozone D. Caustic potash B. Both A and R are true but R is not a correct explanation of A
50. Electrons within a metal have energy levels from zero to C. A is true but R is false
Fermi level EF. D. A is false but R is true
A. True B. False
11. Pentavalent impurity creates n type semiconductor.
ELECTRONIC DEVICES AND CIRCUITS (sectio13) A. True B. False
1. A Darlington emitter follower circuit is some times used in
the output stage of a TTL gate in order to 12. When a BJT is operated under saturated condition
A. increase its IQL A. both junctions are forward biased --
B. reduce its I0H B. both junctions are reverse biased
C. increase its speed of operation C. CB junction is forward biased and EB junction is reverse
D. reduce power dissipation biased
D. EB junction is forward biased and CB junction is reverse
2. Assertion (A): At room temperature the fermi level in p type biased
semiconductor lies nearer to the valence band and in n type
semiconductor it lies nearer to the conduction band. Reason 13. Indium, aluminium, arsenic are all p type impurities.
(R): At room temperature, the p type semiconductor is rich in A. True B. False
holes and n type semiconductor is rich in electrons.
A. Both A and R are true and R is correct explanation of A 14. As the temperature of an intrinsic semiconductor material is
B. Both A and R are true but R is not a correct explanation of A increased
A. additional holes are created in the conduction band
C. A is true but R is false B. protons get excited
D. A is false but R is true C. protons acquire charge
D. energy of the atom is increased –
3. The drift velocity of electrons and holes is proportional to
electric field strength. 15. Hall coefficient KH and charge density r are related as
A. True B. False A. KH = 1/p B. KH = r
C. KH = (1/p)^1/2 D. KH = (r)^1.2
4. In an n channel MOSFET, the substrate is connected
A. to negative terminal of battery
Page 27
16. When a diode is forward biased, the diode current is 27. In commercial electron tubes the current produced by the
A. high B. low cathode at 1000 K is about
C. zero D. low or zero A. 0.01 A per cm^2 of cathode surface
B. 0.1 A per cm^2 of cathode surface
17. In p type semiconductors the conduction due to holes ( = C. 1 A per cm^2 of cathode surface
σp ) is (where e = charge on hole, μp is hole mobility and p is D. 5 A per cm^2 of cathode surface
hole concentration)
A. pe/ In p type semiconductors the conduction due to holes ( = 28. In a conductor the conduction and valence bands overlap
A. True B. False
σp ) is (where e = charge on hole, μp is hole mobility and p
is hole concentration) A. pe/μp 29. In which of the following device electrons will be the
B. μp/pe majority carriers?
C. peμp A. P-type semiconductor B. N-type semiconductor
D. 1/ peμp C. N-P-N transistor D. P-N-P transistor
18. At room temperature, the current in the, intrinsic 30. An n channel JFET has IDS whose value is
semiconductor is due to A. maximum for VGS = 0 and minimum for VGS negative
A. holes B. electrons and large
C. ions D. holes and electrons B. minimum for VGS = 0 and maximum for VGS negative and
large
19. Which of these is also called 'hot carrier diode'? C. maximum for VGS = 0 and minimum for VGS positive and
A. PIN diode B. LED large
C. Photo diode D. Schottky diode D. minimum for VGS = 0 and maximum for VGS positive and
large
20. A d.c. power supply has an open circuit voltage of 100 V.
When the full load current is drawn, the output drops to 80 V. 31. How is an N-channel junction Field Effect Transistor
The percentage voltage regulation is operated as an amplifier?
A. 97.25% B. 75% C. 50% D. 25% A. With a forward bias gate source junction
B. With a reverse bias gate-source junction
21. The dc output voltage from a power supply C. With a open gate source junction
A. increases with higher values of filter capacitance and D. With a shorted gate source junction
decreases with more load current
B. decreases with higher values of filter capacitance and 32. The Ebers-moll equation for IE in CB configuration is given
increases with more load current by
C. decreases with higher values of filter capacitance as well as A. IE = anICIEC0
with more load current B. IE = aIIC + IC0
D. increases with higher values of filter capacitance as well as C. IE = anIC + IC0(eqVEB/KT-1)
with more load current D. IE = aIIC + IE0(eqVEB/KT - 1)
22. Avalanche beakdown is primarily dependent on the 33. Ferrites are

phenomenon of A. hard materials
A. doping B. collision B. brittle materials
C. recombination D. ionization C. not easily machinable
D. materials with all above properties
23. In a JFET, the drain current is maximum when
A. VGS = VDS B. VGS = pinch off voltage 34. The merging of a hole and an electron is called
C. VGS = 0 D. VGS is negative A. recombination B. covalent bonding
C. thermal union D. none of the above
24. The holes diffuse from P-region to the N-region in a P-N
junction diode because 35. Which of the following semiconductor has the highest
A. there is greater concentration of holes in the P-region melting point?
as compared to N-region A. Germanium B. Silicon
B. there is greater concentration of holes in the N-region as C. Gallium arsenide D. Lead sulphide
compared to P-region
C. the free electrons in the N-region attract them 36. The equivalent circuit of an ideal diode is
D. potential difference facilities such transfer A. a charging condenser B. a discharging condenser
C. a switch D. a resistor
25. Surface leakage current is a part of
A. reverse current B. forward current 37. What is meant by "continuous collector current" in BJT?
C. reverse breakdown D. forward breakdown A. Maximum collector current
B. Current at Quiescent condition
26. The forbidden energy gap in semiconductors C. Leakage current
A. is always zero D. Junction Capacitance charging and discharging current
B. lies just below the valence band
C. lies between the valence band and the conduction band 38. The small signal input impedance of a transistor whose
D. lies just above the conduction band output is shorted for the measuring signal is
Page 28
metals
A. B. C. the product of the residual resistivities of the component
C. D. metals
D. depend on the concentration of the minor component in
39. Assertion (A): The frequency of light used for photoelectric the alloy
emission is high. Reason (R): As per Einstein's equation 0.5
mv2 < hf - Uw. 49. Which of the following insulating material is restricted to
A. Both A and R are true and R is correct explanation of A temperatures below 100°C?
B. Both A and R are true but R is not a correct explanation of A A. Micanite B. Asbestos
C. Teflon D. Polythene
50. - ve feedback in an amplifier
A. reduces gain
40. The electric breakdown strength is affected by B. increase frequency and phase distortion
A. shape of the waveform of applied voltage C. reduce bandwidth
B. steepness of the wavefront of the applied voltage D. increase noise
C. composition of the material
D. all of the above
1. The ratio of impurity atoms to intrinsic semiconductor atoms
41. Gel is in an extrinsic semiconductor is about.
A. a polymer having side groups distributed randomly along a A. 1 : 10 B. 1 : 1000
vinly polymer chain C. 1 : 100000 D. 1 : 10⁸
B. a polymer having secondary chains branching from the main
2. To ensure that a zener diode does not get destroyed
molecular chain
A. the applied voltage should not exceed breakdown voltage
C. a solid frame work of colloidal particles linked together
B. the current should not exceed rated current
and containing a fluid
C. the current should be less than magnitude of barrier
D. a polymer in which the repeating unit of each molecule has
potential
vinyl group
D. both (a) and (b)
42. When a P-N junction is unbiased, the junction current at
3. SCR turns of from conducting state to blocking state on
equilibrium is
A. reducing gate current
A. zero as no charges cross the junction
B. reversing gate voltage
B. zero as equal number of carriers cross the barrier
C. reducing anode current below holding current value
C. mainly due to diffusion of majority carriers
D. applying ac to the gate
D. mainly due to diffusion of minority carriers
4. The kinetic energy of free electrons in a metal is (where k is
43. Which one of the following material has the highest
the de-Broglie wave number of the electron)
dielectric strength?
A. inversely proportional to k
A. Porcelain B. Soft rubber
B. inversely proportional to square of k
C. Glass D. polystyrene
C. proportional to k
44. Assertion (A): In p type semiconductor conduction is mainly D. proportional to the square of k
due to holes. Reason (R): In p type material the holes are
5. The turn on time of an SCR is 5 micro second. Its trigger
majority carriers.
pulse should have
A. short rise time with pulse width = 2.5 μs
B. long rise time with pulse width = 3 μs
C. short rise time with pulse width = 4 μs
D. long rise time with pulse width = 4 μs
6. The cut in voltage
45. In common base configuration, the input characteristics of
A. is the same for silicon and germanium diodes
bipolar junction transistor are drawn between
B. is a forward voltage
A. VEB and IE B. VCB and IC
C. is a reverse voltage
C. IC and VCE D. IE and VCE
D. is a forward voltage below which the current is very
46. Fermi level is the maximum energy that an electron can small
possess at 0 K.
7. With an ac input from 50 Hz power line, the ripple frequency
A. True B. False
is
47. The voltage across the secondary of the transformer in a A. 50 Hz in the dc output of half wave as well as full wave
half wave rectifier (without any filter circuit) is 25 volts. The rectifier
maximum voltage on the reverse biased diode will be B. 100 Hz in the dc output of half wave as well as full wave
A. 100 V B. 50 V C. 25 V D. 12.5 V rectifier
C. 50 Hz in the dc output of half wave and 100 Hz in the dc
48. The residual resistivity of a binary alloy at 0°K is output of full wave
A. the sum of the residual resistivities of the component metals D. 100 Hz in the dc output of half wave and 50 Hz in the dc
B. the difference of the residual resistivities of the component output of full wave
Page 29
8. For an insulating material, dielectric strength and dielectric 19. Thermal runaway is not possible in FET, because as the
loss should be respectively temperature of FET increases.
A. high and high B. low and high A. the mobility decreases
C. high and low D. low and low B. the transconductance increases
C. impedance of the source
9. Semiconductors have D. power dissipation in the chip
A. aero temperature coefficient of resistance
B. positive temperature coefficient of resistance 20. Which of the following pairs of semiconductors and current
C. negative temperature coefficient of resistance carriers is correctly matched?
D. none of the above A. Intrinsic : number of electrons = number of holes
B. P type : number of electrons > number of holes
10. The dipole moment per unit volume as a function of E in C. N type : number of electrons < number of holes
the case of an insulator is given by (symbols have the usual D. Bulk : neither electrons nor holes
meaning).
A. P = ε0E (εr - E) -- B. P = ε0E 21. If E is energy level of electron and EF is Fermi level, then
A. all quantum states with E less than EF will be occupied
C.=. D.P= at T = 0
B. all quantum states with E less than EF will be empty at T = 0
11. The I/P impedance (Zi) and the O/P impedance (Zo) of an
ideal trans conductance (Voltage controlled current source) C. some quantum states with E less than EF will be occupied
amplifier are at T = 0
A. Zi = 0, Zo = 0 B. Zi = 0, Zo = ∞ D. none of the above
C. Zi = ∞, Zo = 0 D. Zi = ∞, Zo = ∞
22. In the equation i = I0 (e^V/ηVT - 1), VT =
12. The relation between thermionic emission current and
temperature is known as A. B. C. T x 11600 D.
A. Richardson Dushman equation
23. The range of life time carriers (electrons and holes) is
B. Langmuir child law
A. 1 μs to 100 μs B. 1 nano sec to 1 μs
C. Ohm's law
C. 1 nano sec to hundreds of μs D. none of the above
D. Boltzmann's law
24. In the forward blocking region of a silicon, controlled
13. Assertion (A): When forward biased a p-n junction has low
rectifier, the SCR is
resistance. Reason (R): The ratio () is called dynamic
A. in the off-state B. in the ON state
resistance.
C. reverse biased D. at the point of breakdown
25. Which of the following is a passive component?
of A
A. Semiconductor devices B. Vacuum tube devices
C. Capacitors D. All of the above
26. From an n channel JFET for VDS constant and if VGS is
14. Assertion (A): JFET is a voltage controlled device. Reason
made more negative, pinch off would occur at
(R): The drain current can be controlled by controlling VGS.
A. higher value of drain current
B. saturation value of drain current
C. zero drain current
D. gate current equal to drain current
27. The diode and the moving coil milliammeter
15. For a P-N junction diode, the current in reverse bias may of figure are assumed to be ideal. The meter
be reading is
A. few amperes B. between 0.5 A and 1 A
C. few milliamperes D. few micro or nanoamperes
16. Greatest mobility can be expected in case of

A. holes B. protons
C. electrons D. negative ions
A. 0.1 mA B.
17. An enhancement mode MOSFET is off when the gate
voltage is C. D.
A. zero B. negative
C. less than threshold value D. none of the above
18. When atoms are held together by the sharing of valence of
electrons A. transportation factor decreases and a increases
A. each atom becomes free to move B. transportation factor increases and a increases
B. neutrons start shifting C. transportation factor increases and a decreases
C. they form a covalent bond D. transportation factor decreases and a decreases
D. some of the electrons are lost
Page 30
29. The V-I characteristic of a semi-conductor diode is shown C. ni(T) = A exp (- E8/2kT²)
in figure. From this figure it can be concluded that (ADD PIC) D. ni(T) = AT3/2 exp (-E8/2kT)
A. The diode is a silicon diode
B. The diode is a germanium diode 39. Electrical contact materials used in switches, brushes and
C. Break down voltage of the diode is 0.7 V relays must possess
D. At 1 V rated current will pass through the diode A. high thermal conductivity and high melting point
B. low thermal conductivity and low melting point
30. The process of deliberately adding impurity to a semi- C. high thermal conductivity and low melting point
conductor material is called D. low thermal conductivity and high melting point
A. impurification B. pollution
C. deionisation D. doping 40. A JFET behaves as a constant current source when
A. VGS = 0
31. The electron and hole concentration in a intrinsic B. VGS is less than pinch off voltage
semiconductor are ni and Pi respectively when doped with a P C. VGS = VDS
type material, these change to n and P, respectively. Then D. VGS is more than pinch off voltage
A. n + P = ni + Pi B. n + ni = P + Pi
C. nPi = niP D. nP = ni Pi 41. The effect of a finite gain of operational amplifier used in an
integrator is that
32. The energy to cause thermionic emission is supplied by A. it would not integrator
heating the cathode. B. slope of the O/P will varied with time
A. True B. False C. final value of the O/P
D. there will be instability in the cirucuit
33. Assertion (A): In an n-p-n transistor as the electrons enter
the collector region, they are accelerated towards the collector 42. The ripple factor from a capacitor filter ________ as the
terminal. Reason (R): Emitter base junction in BJT is forward load resistance ________ .
biased. A. decreases, decreases B. decreases, increases
A. Both A and R are true and R is correct explanation of A C. increases, decreases D. increases, increases
of A 43. Of the various capacitances associated with a junction
C. A is true but R is false transistor the gain bandwidth product is affected to maximum
D. A is false but R is true extend by
A. base collector parasitic capacitor
34. Assertion (A): In reverse biased p-n junction, the reverse B. base collector space charge layer capacitance
saturation current is nearly constant if the reverse voltage is C. base emitter space charge layer capacitance
less than critical value. Reason (R): The total reverse current is D. base emitter diffusion capacitance
sum of reverse saturation current and surface leakage current.
A. Both A and R are true and R is correct explanation of A 44. Choose proper substitutes for x and y to make the following
B. Both A and R are true but R is not a correct explanation statement correct. Tunnel diode, Avalanche photodiode are
of A operated in x bias and y bias respectively.
C. A is true but R is false A. x : Reverse, y : Reverse B. x : Reverse, y : forward
D. A is false but R is true C. x : Forward, y : Reverse D. x : forward, y : forward
35. The mass of an electron is nearly 45. Assertion (A): When a zener diode breakdown, occurs the
A. 9.1 x 10-²⁷ kg B. 9.1 x 10-²⁹ kg voltage across it is constant. Reason (R): The upper limit of
C. 9.1 x 10-³¹ kg D. 9.1 x 10-³⁵ kg zener current is determined by power handling capacity.
36. Assertion (A): In a Schottky diode the reverse recovery B. Both A and R are true but R is not a correct explanation
time is almost zero. Reason (R): A Schottky diode has of A
aluminium silicon junction. C. A is true but R is false
A. Both A and R are true and R is correct explanation of A D. A is false but R is true
46. Consider the following statements
C. A is true but R is false 1. An iron cored choke is a nonlinear device.
D. A is false but R is true 2. A carbon resistor kept in a sunlight is a time - invariant and
passive device.
37. The drain characteristics of JFET are drawn between 3. A dry cell is a time - varying and active device.
A. VGS and VDS for different values of drain current 4. An air capacitor is a time - invariant and passive device
B. drain current and VGS for different values of VDS Of these statements
C. drain current and VDS for different values of VGS A. 1, 2, 3 and 4 are correct B. 1, 2 and 3 are correct
D. drain current and VGS for one value of VDS C. 1, 2 and 4 are correct D. 2 and 4 are correct
38. Which of the following expressions may be used to 47. If 10 V is the peak voltage across the secondary of the
correctly describe the temperature (T) variation of the intrinsic transformer in a half wave rectifier (without any filter circuit),
carrier density (ni) of a semiconductor? then the maximum voltage on the reverse biased diode will be
A. ni(T) = (A/T) exp (- E8/kT²) A. 20 V B. 14.14 V C. 10 V D. 7.8 V
B. ni(T) = A (- E8/2kT)¹⁰
48. In energy band diagram of p type semiconductor the
acceptor energy level is
Page 31
A. in valence band 9. The forbidden energy gap between the valence band and
B. in conduction band conduction band will be least in case of
C. slightly above valence band A. metals B. semiconductors
D. slightly below conduction band C. insulators D. all of the above
49. Given a power supply filter circuit, what measurements 10. If too large current passes through the diode
must be made of determine percentage regulation A. all electrons will leave
A. current through and voltage across the capacitor B. all holes will freeze
B. d.c. load voltage and r.m.s. load voltage C. excessive heat may damage the diode
C. current through load and voltage across load resistance D. diode will emit light
D. number of turns and gauge of secondary winding of
transformer 11. Figure shows the terminals of a transistor in plastic
package TO 18. Then
50. When the gate terminal of MOSFET is positive, it is said to
operate in
A. depletion mode B. conduction mode
C. enhancement mode D. none of the above
A. terminals 1, 2, 3 are emitter, collector, base respectively
B. terminals 1, 2, 3 are emitter, base, collector respectively
C. terminals 1, 2, 3 are base, emitter collector, respectively
1. The product kT (where k is Boltzmann's constant and T is
D. terminals 1, 2, 3 are collector, emitter, base respectively
absolute temperature) at room temperature is about
A. 0.051 eV B. 0.026 eV
12. The network shown in the figure represents a
C. 0.01 eV D. 0.001 eV
2. If E is energy level of electron and EF is fermi level, and T =

0 and E > EF, then
A. the probability of finding an occupied quantum state of
energy higher than EF is zero
A. band pass filter B. low pass filter
B. all quantum states with energies greater than EF are
C. high pass filter D. band stop filter
occupied
C. some quantum states with energies greater than EF are 13. In a bipolar transistor, the emitter base junction has
occupied A. forward bias B. reverse bias
D. majority of quantum states with energies greater than EF C. zero bias D. zero or reverse bias
are occupied
14. Which of these has semi-conductor metal junction?
3. Which variety of copper has the best conductivity? A. PIN diode B. Photo diode
A. Pure annealed copper C. Tunnel diode D. Schottky diode
B. Hard drawn copper
C. Induction hardened copper 15. The ripple factor of power supply is a measure of
D. Copper containing traces of silicon A. its filter efficiency B. diode rating
C. its voltage regulation D. purity of power output
4. The number of valence electrons in a silicon atom is
A. 4 B. 2 C. 1 D. 0 16. Assertion (A): When light falls at junction of p-n photodiode,
its p side becomes positive and n side becomes negative.
5. In a JFET VDS exceeds the rated value. Then it operates in Reason (R): When a photodiode is short circuited, the current
A. active region B. ohmic region in the external circuit flows from p side to n side.
C. cut off region D. either cut off or active region A. Both A and R are true and R is correct explanation of A
6. Figure represents a (ADD PIC)
A. Diode rectifier B. Schottky diode
C. Varistor D. None of the above
17. In what condition does BJT act like an open switch
7. The output, V-I characteristics of an Enhancement type
A. cut off B. saturation
MOSFET has
C. active D. both (b) and (c)
A. only an ohmic region
B. only a saturation region 18. In a JFET
C. an ohmic region at low voltage value followed by a A. gate source cut off voltage is equal to VDS
saturation region at higher voltages B. gate source cut off voltage is equal to pinch off voltage
D. an ohmic region at large voltage values preceded by a C. gate source cut off voltage is twice the pinch off voltage
saturation region at lower voltages D. gate source cut off voltage is equal to negative pinch
off voltage
8. Piezoelectric quartz crystal resonators find application where
19. A power supply has full-load voltage of 20 V. What will be
A. signal amplification is required its no load voltage when its voltage regulation is 100%
B. rectification of the signal is required A. 0 V B. 10 V C. 20 V D. 40 V
C. signal frequency control is required
D. modulation of signal is required
Page 32
20. For a photo conductor with equal electron and hole 31. In a junction transistor biased for operation at emitter
mobilities and perfect ohmic contacts at the ends, an increase current 'IE' and collector current 'IC' the transconductance 'gm'
in the intensities of optical illumination results in is.
A. change in open circuit voltage
B. change in short circuit current A. B. C. D.
C. a reduction resistance
D. an increase of resistance 32. Ferrities are particularly suited for high frequency
applications because of their
21. Holes act like A. low distortion B. low eddy current loss
A. positive charges -- B. neutral atoms C. high conductivity D. high mobility
C. negative charges D. crystals
33. In intrinsic semiconductor, the fermi level
22. Assertion (A): Silicon is less sensitive to changes in A. lies at the centre of forbidden energy gap
temperature than germanium. Reason (R): It is more difficult to B. is near the conduction band
produce minority carriers in silicon than in germanium. C. is near the valence band
A. Both A and R are true and R is correct explanation of A D. may be anywhere in the forbidden energy gap
34. Electromagnetic waves transport
C. A is true but R is false A. energy only
D. A is false but R is true B. momentum only
C. energy as well as momentum
23. The number of protons in a silicon atom is D. neither energy nor momentum
A. 32 B. 28 C. 14 D. 4
35. In a forward biased p-n junction current enters p material
24. The emitter follower is widely used in electronic instrument as hole current and leaves n material as electron current of the
because same magnitude.
A. its voltage gain is less than unity A. True B. False
B. its voltage gain is very high
C. its O/P Impedance is low and input impedance is high 36. When P-N junction is in forward bias, by increasing the
D. its O/P Impedance is high and I/P impedance is low battery voltage
A. current through P-N junction reduces
25. A cascade amplifier stage is equivalent to B. current through P-N junction increases --
A. a common emitter stage followed by a common stage C. circuit resistance increases
B. a common base stage followed by an emitter follower D. none of the above
C. an emitter follower stage followed by a common base stage
D. a common base stage followed by a common emitter stage 37. A semiconductor in its purest form called
A. intrinsic semiconductor --
26. An amplifier with resistive -ve feedback has two left poles in B. extrinsic semiconductor
its open loop transfer function. The amplifier C. P-type semiconductor
A. will always be unstable at high frequencies D. N-type semiconductor
B. will be stable for all frequencies
C. may be unstable, depending on the feedback factor 38. Which of the following is an active device?
D. will oscillate at low frequencies A. Transformer B. Silicon controlled rectifier
C. Electric bulb D. Loudspeaker
27. Amplification of ultrasonic waves is possible in a
piezoelectric semiconductor under applied electric field. The 39. Assertion (A): The forward dynamic resistance of p-n diode
basic phenomenon involved is known as varies inversely with current. Reason (R): The forward dynamic
A. electrostriction resistance of p-n diode varies with the operating voltage.
B. acousto-optic interaction A. Both A and R are true and R is correct explanation of A
C. acousto-electric interaction B. Both A and R are true but R is not a correct explanation
D. stimulated Brillouin scattering of A
28. For a junction FET in the pinch off region, as the drain D. A is false but R is true
voltage is increased, the drain current
A. becomes zero B. abruptly decrease 40. If E (i.e., available energy state) = EF(i.e., Fermi level),
C. abruptly increases D. remains constant then probability that state E will be occupied is 0.5 for any
temperature T.
29. For a BJT, under the saturation region. A. True B. False
A. IC = βIB
B. IC > βIB 41. CE saturation resistance of n-p-n transistor is
C. IC is independent of other parameter
A. B. C. D.
D. IC < βIB
30. In which mode of BJT operation are both junctions reverse 42. In LED the radiation is in
biased? A. visible region B. infrared region
A. Active B. Saturation C. both (a) and (b) D. neither (a) nor (b)
C. Cut off D. Reverse active
Page 33
43. The rate of change of excess carrier density is proportional 3. Which of the following has highest resistivity?
to carrier density. A. Mica B. Paraffin wax
A. True B. False C. Air D. Mineral oil
44. Tuned voltage amplifiers are not used 4. Assertion (A): In p-n-p transistor collector current is termed
A. radio receivers negative. Reason (R): In p-n-p transistor holes are majority
B. public address system carriers.
C. T.V. Receivers A. Both A and R are true and R is correct explanation of A
D. band of freq. selected and amplified B. Both A and R are true but R is not a correct explanation
of A
45. The main reason why Ni-Zn ferrites are used for audio and C. A is true but R is false
T.V. transformers is that D. A is false but R is true
A. they have large saturation magnetization
B. they are easy to fabricate by rolling 5. The sensitivity of human eyes is maximum at
C. they are totally free from pores and voids A. white portion of spectrum
D. they have a high electrical resistivity B. green portion of spectrum
C. red portion of spectrum
46. Assertion (A): Intrinsic semiconductor is an insulator at 0 K. D. violet portion of spectrum
Reason (R): Fermi level in intrinsic semiconductor is in the
centre of forbidden energy band. 6. In a bipolar transistor, the base collector junction has
A. Both A and R are true and R is correct explanation of A A. forward bias B. reverse bias
B. Both A and R are true but R is not a correct explanation of A C. zero bias D. zero or forward bias
C. A is true but R is false 7. An intrinsic silicon sample has 1 million free electrons at
D. A is false but R is true room temperature. As the temperature is increased
A. the number of free electrons increases
47. Typical values of h parameters at about 1 mA collector B. the number of free electrons increases but the number of
current for small signal audio amplifier in CE configuration are : holes decreases
C. the number of free electrons and holes increase by the
A. hie = 100 Ω, hre = 10-¹, hfe = 50, hoe = 1 m mho same amount
B. hie = 5 kΩ, hre = 10-⁴, hfe = 200, hoe = 20 m mho D. the number of free electrons and holes increase but not by
C. hie = 5 kΩ, hre = 0, hfe = 50, hoe = 2 m mho the same amount
D. hie = 100 kΩ, hre = 10-², hfe = 100, hoe = 10 m mho
8. What is the necessary a.c. input power from the transformer
48. A CMOS amplifier when compared to an N-channel. secondary used in a half wave rectifier to deliver 500 W of d.c.
MOSFET, has the advantage of power to the load?
A. higher cut off frequency A. 1232 W B. 848 W
B. higher voltage gain C. 616 W D. 308 W
C. higher current gain
D. lower current drain from the power supply, there by less 9. In a semi-conductor diode, the barrier offers opposition to
dissipation A. holes in P-region only
B. free electrons in N-region only
C. majority carriers in both regions
49. Dynamic resistance of diode is D. majority as well as minority carriers in both regions
A. True B. False
10. In a half wave rectifier, the load current flows
50. The presence of some holes in an intrinsic semiconductor A. only for the positive half cycle of the input signal
at room temperature is due to B. only for the negative half cycle of the input signal
A. valence electrons B. doping C. for full cycle
C. free electrons D. thermal energy D. for less than fourth cycle
ELECTRONIC DEVICES AND CIRCUITS (section16) 11. For a NPN bipolar transistor, what is the main stream of
1. Voltage series feedback (Also called series-shunt feedback) current in the base region?
results in A. Drift of holes B. Diffusion of holes
A. increase in both I/P and O/P impedances C. Drift of electrons D. Diffusion of electrons
B. decrease in both I/P and O/P impedances
C. increase in I/P impedance and decrease in O/P 12. Assertion (A): A VMOS can handle much larger current
impedance than other field effect transistors. Reason (R): In a VMOS the
D. decrease in I/P impedance and increase in O/P impedance conducting channel is very narrow.
2. How many free electrons does a p type semiconductor has? B. Both A and R are true but R is not a correct explanation of A
A. only those produced by thermal energy
B. only those produced by doping C. A is true but R is false
C. those produced by doping as well as thermal energy D. A is false but R is true
D. any of the above
13. In monolithic ICs, all the components are fabricated by
A. diffusion process B. oxidation
C. evaporation D. none
Page 34
14. Which one of the following is not a characteristic of a 26. Maximum rectification efficiency for a half wave rectifier is
ferroelectric material? A. 100% B. 88% C. 50% D. 40.6% --
A. High dielectric constant
B. No hysteresis 27. For a semiconductor, the conductivity is a function of the
C. Ferroelectric characteristic only above the curie point products of the number of charge carriers and their mobilities.
D. Electric dipole moment As result, if the temperature of a slab of intrinsic silicon
increases, how does its conductivity vary?
15. In case of photo conductor for germanium when forbidden A. Decreases
energy gap is 0.72 eV, the critical wavelength for intrinsic B. Increases
excitation will be C. Remains unaffected
A. 1.43 m B. 1.43 mm C. 1.73 mm D. 1.73 x 10¹² m D. Increases or decreases depending upon the rise in
temperature
16. In the sale of diamonds the unit of weight is carat. One
carat is equal to 28. In a junction transistor, the collector cut-off current 'ICB0'
A. 100 mg B. 150 mg C. 200 mg D. 500 mg reduces considerably by doping the
A. emitter with high level of impurity
17. R.M.S. value of the waveform shown will be B. emitter with low level of impurity
C. collector with high level of impurity
D. collector with low level of impurity
29. A Schottky diode clamp is used along with a switching BJT

for
A. 3.53 V B. 1 V C. 7.07 V D. 8.56 V A. reducing the power
B. reducing the switching time dissipation
18. The effect of current shunt feedback in an amplifier is to C. increasing the value of β
A. increase the I/P resistance and decrease the O/P resistance D. reducing the base current
B. increase both I/P and O/P resistance 30. The first dominant pole encountered in the frequency
C. decrease both I/P and O/P resistance response of a compensated op-amp is approximately at
D. decrease the I/P resistance and increase O/P resistance A. 5 Hz B. 10 kHz C. 1 MHz D. 100 MHz
19. Assertion (A): A JFET can be used as a current source. 31. For a UJT if R1 = Resistor from emitter to the base 1 R2 =
Reason (R): In beyond pinch off region the current in JFET is Resistor from emitter to the base 2 and RBB = R1 + R2, then
nearly constant. the intrinsic stand off ratio (η) is
B. Both A and R are true but R is not a correct explanation of A A. B. C. D.
C. A is true but R is false 32. The kinetic energy of free electrons in a metal is (where k is
D. A is false but R is true de-Broglie wave number of the electrons)
20. Permalloy is A. ∝ B. ∝ C. μk D. μk2

A. a variety of stainless steel
B. a polymer 33. Intrinsic concentration of charge carriers in a
C. a conon-ferrous alloy used in aircraft industry semiconductor varies as
D. a nickel an iron alloy having high permeability – A. T B. T² C. T³ -- D. T-²
21. Which of the following could be the maximum current rating 34. The dynamic resistance of a forward biased p-n diode
of junction diode by 126? A. varies inversely with current
A. 1 A B. 10 A C. 20 A D. 100 A B. varies directly with current
C. is constant
22. Each cell of a static Random Access memory contains D. is either constant or varies directly with current
A. 6 MOS transistor
B. 4 MOS transistor, 2 capacitor 35. A thermistor is a
C. 2 MOS transistor, 4 capacitor A. thermocouple
D. 1 MOS transistor and 1 capacitor B. thermometer
C. miniature resistance
23. An electron in the conduction band D. heat sensitive explosive
A. has higher energy than the electron in the valence band
B. has lower energy than the electron in the valence band 36. When diodes are connected in series to increase voltage
C. loses its charge easily rating the peak inverse voltage per junction
D. jumps to the top of the crystal A. should not exceed half the breakdown voltage
B. should not exceed the breakdown voltage
24. The magnetization 'm' of a superconductor in a field of H is C. should not exceed one third the breakdown voltage
A. extremely small B. - H D. may be equal to or less than breakdown voltage
C. - 1 D. Zero
37. Hall effect is observed in a specimen when it is carrying
25. The number of free electrons in acceptor atom is current and is placed in a magnetic field. The resultant electric
A. 1 B. 2 C. 3 D. 4 field inside the specimen is
Page 35
A. normal to both current and magnetic field
B. in the direction of current
C. antiparallel to magnetic field
D. in arbitrary direction
38. In an ideal diode there is no breakdown, no ________

current, and no forward ________ drop.
A. reverse, voltage B. forward, current
C. forward, voltage D. reverse, current
39. Silicon is not suitable for fabrication of light emitting diodes

because it is
A. an indirect band gap semiconductor
B. direct band gap semiconductor
C. wideband gap semiconductor
D. narrowband gap semiconductor
40. MOSFET can be used as a

A. current controlled capacitor
B. voltage controlled capacitor
C. current controlled inductor
D. voltage controlled inductor
41. Power diodes are generally

A. silicon diodes B. germanium diodes
C. either of the above D. none of the above
42. The inductance of a single layer solenoid of 10 turns is 5

μH. Which one of the following is the correct value of
inductance when the number of turns is 20 and the length is
doubled.
A. 10 μH B. 20 μH C. 40 μH D. 5 μH
43. The depletion layer width of Junction

A. decreases with light doping
B. is independent of applied voltage
C. is increased under reverse bias
D. increases with heavy doping
44. Forbidden energy gap in germanium at 0 K is about

A. 10 eV B. 5 eV C. 2 eV D. 0.78 eV
45. Light dependent resistors are

A. highly doped semiconductor
B. intrinsic semiconductor
C. lightly doped semiconductor
D. either (a) or (c)
46. Fermi level is the amount of energy in which

A. a hole can have at room temperature
B. an electron can have at room temperature
C. must be given to an electron move to conduction band
47. When avalanche breakdown occurs covalent bonds are not

affected.
A. True B. False
48. In p channel JFET, VGS is positive.

A. True -- B. False
49. Human body cannot sustain electric current beyond

A. 1 μA B. 10 μA C. 5 μA D. 35 μA
50. To produce p type semiconductor we add

A. acceptor atoms B. donor atoms
C. pentavalent impurity D. trivalent impurity
Page 36

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ELECTRONIC DEVICES AND CIRCUITS (section1) breakdown voltage.

D. none of the above.

20. In a bipolar transistor the barrier potential

25. As compared to an ordinary semiconductor diode, a

26. The mean free path of conduction electrons in copper is

10. Light dependent resistor is

7. Between which regions does BJT act like switch?

8. Assertion (A): When a photoconductive device is exposed to

13. At room temperature kT = 0.03 eV.

17. Resistivity of hard drawn copper is

ELECTRONIC DEVICES AND CIRCUITS (section6) to the intensity of light

8. The collector to emitter cutoff current (ICE0) of a transmitter

45. The resistivity of intrinsic semiconductor material is about

47. The emission of light is LED due to

C. D. 8. Zener diode is invariably used with

29. The v-i characteristics of a diode may be linear or non

48. The resistivity of ferrites is 8. In a zener diode

42. Hystresis loss least depends on

30. Figure represents a 40. Breakdown in dielectric may be

46. The main purpose of using transformer coupling in a class germanium

22. Avalanche beakdown is primarily dependent on the 33. Ferrites are

16. Greatest mobility can be expected in case of

2. If E is energy level of electron and EF is fermi level, and T =

29. A Schottky diode clamp is used along with a switching BJT

20. Permalloy is A. ∝ B. ∝ C. μk D. μk2

38. In an ideal diode there is no breakdown, no ________

39. Silicon is not suitable for fabrication of light emitting diodes

40. MOSFET can be used as a

41. Power diodes are generally

42. The inductance of a single layer solenoid of 10 turns is 5

43. The depletion layer width of Junction

44. Forbidden energy gap in germanium at 0 K is about

45. Light dependent resistors are

46. Fermi level is the amount of energy in which

47. When avalanche breakdown occurs covalent bonds are not

48. In p channel JFET, VGS is positive.

49. Human body cannot sustain electric current beyond

50. To produce p type semiconductor we add

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