ECE 421 Quiz 1

1. For an emitter feedback bias Circuit having, RE=1Kohm, RC= 4.7Kohm, IB=5μA, IE = 1mA,
VCC = 12V and Vce = 5V. Find the value of beta.
a. 254
b. 245
c. 425
d. 524
2. What is the Thevenin’s voltage (VTH) in a voltage divider bias circuit?
a. (VCCR2)/(R1+R2)
b. (VCCR2)/(R1-R2)
c. (VCCR1)/(R1+R2)
d. VCC(R1+R2)/(R2)
3. Which of the following is a trivalent doping element?
a. Arsenic
b. Antimony
c. Boron
d. Phosphorous
4. The reverse current in a diode is of the order of
a. kA
b. mA
c. μA
d. A
5. The average DC level voltage of the full wave rectifier using Silicon diodes is _______
a. Vdc = 0.636(Vm - 2VK)
b. Vdc = 0.318(Vm - VK)
c. Vdc = 0.636(Vm)
d. Vdc = 0.318(Vm – 2VK)
6. Which of the following is a trivalent doping element?
a. Arsenic
b. Antimony
c. Indium
d. Phosphorous
7. The forward voltage drop across a silicon diode is about
a. 2.5 V
b. 0.3 V
c. 1.2 V
d. 0.7 V
8. An amplifier is designed using fixed bias configuration, what is its output impedance
(source Resistor is bypassed)?
a. RD+rd
b. RD || rd
c. RG
d. 0
9. What is the relation between the drain current and source current once the voltage crosses
pinch off?
a. ID = IS
b. ID = 1/IS
c. ID = IS + IG
d. ID = βIS
10. Which of the following is a trivalent doping element?
a. Arsenic
b. Antimony
c. Gallium
d. Phosphorous
11. The three terminals of a bipolar junction transistor are called:
a. NPN
b. Emitter, Base, Collector
c. Drain, Source, Gate
d. Input, Output, Ground
12. What is the Thevenin’s resistance (RTH) in a voltage divider bias circuit?
a. (R1R2)/(R1+R2)
b. (R2)/(R1+R2)
c. (R1)/(R1+R2)
d. (R1+R2)/(R1R2)
13. Which of the following is a trivalent doping element?
a. Arsenic
b. Antimony
c. Aluminum
d. Phosphorous
14. The βDC of a transistor is its
a. Current Gain
b. Power Gain
c. Voltage Gain
d. Resistance Gain
15. Which of the following is a pentavalent doping element?
a. Boron
b. Phosphorous
c. Indium
d. Gallium
16. In the given transistor amplifier, RC = 2.2kΩ and r’e =20 Ω, the voltage gain is:
a. 4400
b. 2200
c. 110
d. 20
17. Which of the following is a pentavalent doping element?
a. Boron
b. Arsenic
c. Indium
d. Gallium
18. In cutoff, VCE is
a. 0 V
b. Minimum
c. equal to VCC
d. Maximum
19. Which of the following is a pentavalent doping element?
a. Boron
b. Antimony
c. Indium
d. Gallium
20. Emitter bias is
a. Essentially independent of βDC
b. Very Dependent of βDC
c. Provides a stable bias point
d. Answers A and C
21. Which of the following is a pentavalent doping element?
a. Boron
b. Bismuth
c. Indium
d. Gallium
22. The JFET is
a. A Unipolar device
b. A voltage-controlled device
c. A current-controlled device
d. Answers A and B
23. Which among the following is the most commonly used semiconductor?
a. Silicon
b. Carbon
c. Germanium
d. Sulphur
24. What happens to the resistance of a pure semiconductor when heated?
a. The resistance increases
b. The resistance decreases
c. The temperature remains the same
d. The resistance remains the same

25. How many valence electrons does a pentavalent impurity have?

a. 3
b. 4
c. 5
d. 6
26. For a certain JFET, IGSS is 10nA at VGS = 10 V, the input resistance is:
a. 100 MΩ
b. 1 MΩ
c. 10 MΩ
d. 1000 MΩ
27. What is the effect of temperature on the recombination rate of electrons in electronic
circuits?
a. Recombination rate increases with increase in the temperature
b. Recombination rate decreases with increase in the temperature
c. Recombination rate is independent of temperature
d. Recombination of electrons doesn’t occur in semiconductors
28. Which of the following is wrong about solar cell electronic devices?
a. Solar cell responsivity is directly proportional to the wavelength of light
b. It produces dark current
c. It is a photovoltaic cell
d. No external voltage is applied
29. If the peak voltage on a centre tapped full wave rectifier circuit is 5V and diode cut in
voltage is 0.7. The peak inverse voltage on diode is_________
a. 4.3V
b. 9.3V
c. 5.7V
d. 10.7V
30. How many valence electrons does a pentavalent impurity have?
a. 3
b. 4
c. 5
d. 6
31. Which of the following is created when trivalent impurities are added to a semiconductor?
a. Free electrons
b. Holes
c. Bound electrons
d. Valence electrons
32. Which of the following does a hole in the semiconductor define?
a. A free proton
b. A free neutron
c. A free-electron
d. An incomplete part of an electron pair bond
33. An electron and a hole in close proximity would tend to _____.
a. attract each other
b. repel each other
c. have no effect on each other
d. destroy each other
34. Which of the following does the resistivity of a semiconductor depend upon?
a. Length of the semiconductor
b. Atomic nature of the semiconductor
c. Shape and atomic nature of the semiconductor
d. Shape of semiconductor
35. Intrinsic semiconductors are those
a. Which are made of semiconductor material in its purest form
b. Which have zero energy gap
c. Which have more electrons than holes
d. Which are available locally
36. A pure semiconductor behaves like an insulator at 0 deg. K because
a. There is no recombination of electrons with holes
b. Drift velocity of free electrons is very small
c. Free electrons are not available for current conduction
d. Energy possessed by electrons at that low temperature is almost zero
37. The energy gap is much more in silicon than in germanium because
a. It has less number of electrons
b. It has high atomic mass number
c. Its crystal has much stronger bonds called ionic bonds
d. Its valence electrons are more tightly bound to their parent nuclii
38. A P-type semiconductor results when
a. A pentavalent impurity is added to an intrinsic semiconductor
b. A trivalent impurity is added to an intrinsic semiconductor
c. Either a pentavalent or trivalent impurity is added to an intrinsic semiconductor
d. None of the above
39. An intrinsic semiconductor at absolute zero.........
a. Becomes extrinsic semiconductor
b. Behaves like an insulator
c. Disintegrates into pieces
d. Becomes superconductor
40. A semiconductor has.... temperature co-efficient of resistance.
a. Zero
b. Positive
c. Negative
d. None of the above
41. A doped semiconductor is also known as
a. Intrinsic semiconductor
b. Extrinsic semiconductor
c. Diffused semiconductor
d. None of the above
42. The diode is in __________ state if the current established by the applied sources is such that
its direction matches that of the arrow in the diode symbol, and VD ≥ 0.7V for Si and VD ≥
0.3V for Ge.
a. Off
b. On
c. Neutral
d. Quiescent
43. A short circuit has a _________ drop across its terminals, and the current is limited only by the
surrounding network.
a. 5 V
b. 0 V
c. 1 V
d. ∞
44. What is the peak inverse voltage across each diode in a voltage doubler?
a. Vm
b. 2 Vm
c. 0.5 Vm
d. 0.25 Vm
45. The quiescent point (Q-point) is defined by a(n) __________.
a. AC network
b. DC network
c. AC and DC network
d. None of the above
46. The x-intercept of the load line with the characteristic curve is determined by the _________.
a. load resistor
b. diode
c. source voltage and the load resistor
d. source voltage
47. As the load resistor increases, the slope of the dc load line and the levels of diode current
__________.
a. increase
b. decrease
c. remain unchanged
d. are unpredictable
48. The PIV rating of the diodes in a full-wave rectifier must be larger than _______ Vm.
a. 0.318
b. 0.636
c. 2
d. 1
49. When a diode is forward-biased, the anode:
a. Is negative relative to the cathode.
b. Is positive relative to the cathode.
c. Is at the same voltage as the cathode.
d. Alternates between positive and negative relative to the cathode.
50. For a fixed bias circuit having RC=2Kohm and VCC=60V, IB=250 μA and β=100, find Vce.
a. 12V
b. 10V
c. 5V
d. 2.5V