Indiabix I

PART 1
SEMICONDUCTORS
SPECIAL PURPOSE DIODES
BIPOLAR JUNCTION TRANSISTORS
BJT DEVICES
BJT AMPLIFIERS
FET DEVICES
FET AMPLIFIERS
BJT AND FET FREQUENCY RESPONSE
BASIC OP AMP CIRCUITS
SEMICONDUCTOR DIODES
DIODE APPLICATIONS
TRANSISTOR BIAS CIRCUITS
DC BIASING BJTS
FIELD EFFECT TRANSISTORS
DC BIASING FETS
INDIABIX 1
SEMICONDUCTORS 9. An n-type semiconductor material 16. A reverse-biased diode has the
A. is intrinsic. ________ connected to the positive side
1. A silicon diode measures a low value B. has trivalent impurity atoms of the source, and the ________
of resistance with the meter leads in added. connected to the negative side of the
both positions. The trouble, if any, is C. has pentavalent impurity source.
A. the diode is open. atoms added. A. cathode, anode
B. the diode is shorted to ground. D. requires no doping. B. cathode, base
C. the diode is internally shorted. C. base, anode
10. For a forward-biased diode, as
D. the diode is working correctly. D. anode, cathode
temperature is ________, the forward
2. Single-element semiconductors are current ________ for a given value of 17. What types of impurity atoms are
characterized by atoms with ____ forward voltage. added to increase the number of
valence electrons. A. decreased, increases conduction-band electrons in intrinsic
A. 3 B. increased, increases silicon?
B. 4 C. increased, decreases A. bivalent
C. 5 D. decreased, decreases B. octavalent
D. 2 C. pentavalent
11. Which statement best describes
D. trivalent
3. Under normal conditions a diode an insulator?
E. none of the above
conducts current when it is A. A material with many free
A. reverse-biased. electrons. 18. What factor(s) do(es) the barrier
B. forward-biased. B. A material doped to have some potential of a pn junction depend on?
C. avalanched. free electrons. A. type of semiconductive
D. saturated. C. A material with few free material
electrons. B. the amount of doping
4. A diode conducts when it is forward- D. No description fits. C. the temperature
biased, and the anode is connected to D. all of the above
the ________ through a limiting resistor. 12. Effectively, how many valence
E. type of semiconductive
A. positive supply electrons are there in each atom within a
material and the amount of
B. negative supply silicon crystal?
doping but not the temperature
C. cathode A. 2
D. anode B. 4 19. An atom is made up of
C. 8 A. protons.
5. As the forward current through a D. 16 B. neutrons.
silicon diode increases, the internal C. electrons.
resistance 13. The boundary between p-type
D. all of the above
A. increases. material and n-type material is called
B. decreases. A. a diode. 20. Reverse breakdown is a condition in
C. remains the same. B. a reverse-biased diode. which a diode
C. a pn junction. A. is subjected to a large reverse
6. The movement of free electrons in a D. a forward-biased diode. voltage.
conductor is called B. is reverse-biased and there is a
A. voltage. 14. You have an unknown type of diode
small leakage current.
B. current. in a circuit. You measure the voltage
C. has no current flowing at all.
C. recombination. across it and find it to be 0.3 V. The
D. is heated up by large amounts
D. equilibrium. diode might be
of current in the forward direction.
A. a silicon diode.
7. For a forward-biased diode, the barrier B. a germanium diode.
potential ________ as temperature 21. There is a small amount of current
C. a forward-biased silicon diode.
increases. across the barrier of a reverse-biased
D. a reverse-biased germanium
A. decreases diode. This current is called
diode.
B. remains constant A. forward-bias current.
C. increases 15. An ideal diode presents a(n) B. reverse breakdown current.
________ when reversed-biased and a(n) C. conventional current.
8. The wide end arrow on a schematic ________ when forward-biased. D. reverse leakage current.
indicates the ________ of a diode. A. open, short
A. ground 22. As the forward current through a
B. short, open
B. direction of electron flow silicon diode increases, the voltage
C. open, open
C. cathode across the diode
D. short, short
D. anode A. increases to a 0.7 V maximum.
B. decreases.
INDIABIX 1
C. is relatively constant. C. the value of dc voltages for
D. decreases and then increases. the device to operate
properly.
23. Doping of a semiconductor material
D. the status of the diode.
means
A. that a glue-type substance is
added to hold the
SPECIAL- PURPOSE A. increase.
material together.
B. decrease.
B. that impurities are added to DIODES C. remain the same.
increase the resistance of
the material. 1. Schottky diodes are also known as 7. What kind of diode is formed by
C. that impurities are added to A. PIN diodes. joining a doped semiconductor region
decrease the resistance of B. hot carrier diodes. with a metal?
the material. C. step-recovery diodes. A. laser
D. that all impurities are removed D. tunnel diodes. B. tunnel
to get pure silicon. C. pin
2. Zener diodes with breakdown D. Schottky
24. The forward voltage across a voltages less than 5 V operate
conducting silicon diode is about predominantly in what type of 8. Refer to this figure. Which symbol is
A. 0.3 V. breakdown? correct for a zener diode?
B. 1.7 V. A. avalanche
C. –0.7 V. B. zener
D. 0.7 V. C. varactor
25. The most common type of diode D. Schottky
failure is a(n) ________. 3. The Schottky diode is used
A. open A. in high-power circuits. A. a
B. short B. in circuits requiring negative B. b
C. resistive resistance. C. c
C. in very fast-switching circuit D. d
26. What occurs when a conduction-
D. in power supply rectifiers E. e
band electron loses energy and falls
back into a hole in the valence band? 4. You have an application for a diode to 9. Which diode employs graded doping?
A. doping be used in a tuning circuit. A type of A. zener
B. recombination diode to use might be B. LED
C. generation A. an LED. C. tunnel
B. a Schottky diode. D. step-recovery
27. The maximum number of electrons in
each shell of an atom is C. a Gunn diode. 10. Refer to this figure. Identify the
A. 2. D. a varactor. Schottky diode.
2
B. 2n where n is the number of 5. Refer to this figure. Which symbol is
the shell. correct for an LED?
C. 4.
D. 8.
28. A silicon diode is forward-biased.
You measure the voltage to ground from A. a
the anode at ________, and the voltage B. b
from the cathode to ground at A. a C. c
________. B. b D. d
A. 0 V, 0.3 V C. c E. e
B. 2.3 V, 1.6 V D. d 11. LEDs are made out of
C. 1.6 V, 2.3 V E. e A. silicon.
D. 0.3 V, 0 V
6. Refer to this figure. If VIN increases, IZ B. germanium.
29. The term bias in electronics usually will C. gallium.
means D. silicon and germanium, but not
A. the value of ac voltage in the gallium.
signal.
12. The normal operating region for a
B. the condition of current
zener diode is the
through a pn junction.
A. forward-bias region.
INDIABIX 1
B. reverse-bias region. 18. The process of emitting photons B. decrease.
C. zero-crossing region. from a semiconductive material is called C. remain the same.
D. reverse-breakdown region. A. photoluminescence.
25. Zener diodes with breakdown
B. gallium arsenide.
13. Refer to this figure. If VIN attempts to voltages greater than 5 V operate
C. electroluminescence.
increase, VR will predominantly in what type of
D. gallium phosphide.
breakdown?
19. An 8.2 V zener has a resistance of A. avalanche
5Ω. The actual voltage across its B. zener
terminals when the current is 25 mA is C. varactor
A. 8.2 V. D. Schottky
A. increase. B. 125 mV.
26. Back-to-back varactor diodes are
B. decrease. C. 8.325 V.
used for what reason?
C. remain the same. D. 8.075 V.
A. over-voltage protection
14. An LED is forward-biased. The diode 20. What diode operates only with B. a wider tuning range
should be on, but no light is showing. A majority carriers? C. to eliminate harmonic
possible trouble might be A. laser distortion
A. the diode is open. B. tunnel D. no reason; only zeners are used
B. the series resistor is too small. C. Schottky in a back-to-back
C. none. The diode should be off if D. step-recovery configuration
forward-biased. 21. Refer to this figure. Which symbol is 27. A tunnel diode is used
D. the power supply voltage is too correct for a photodiode? A. in high-power circuits.
high. B. in circuits requiring negative
15. A 6.2 V zener is rated at 1 watt. The resistance.
maximum safe current the zener can C. in very fast-switching circuits.
carry is D. in power supply rectifiers.
A. 1.61 A. 28. What type of diode is commonly
B. 161 mA. A. a used in electronic tuners in TVs?
C. 16.1 mA. B. b A. varactor
D. 1.61 mA. C. c B. Schottky
16. Refer to this figure. Find the tunnel D. d C. LED
diode symbol. E. e D. Gunn
22. What type of diode maintains a 29. A laser diode normally emits
constant current? A. coherent light.
A. LED B. monochromatic light.
B. zener C. coherent and monochromatic
C. current regulator light.
A. a D. pin D. neither coherent nor
B. b E. none of the above monochromatic light.
C. c 23. What diode is used in seven-segment 30. A varactor is a pn junction diode that
D. d displays? always operates in ________-bias and is
E. e A. zener doped to ________ the inherent
17. Refer to this figure. If the load current B. LED capacitance of the depletion region.
increases, IR will _____ and IZ will _____. C. laser A. forward, maximize
D. Schottky B. reverse, maximize
C. reverse, minimize
24. Refer to this figure. If VIN decreases,
IR will D. forward, minimize
A. remain the same, increase

BIPOLAR JUNCTION
B. decrease, remain the same TRANSISTORS
C. increase, remain the same
D. remain the same, decrease 1. Refer to this figure. Determine the
A. increase. minimum value of IB that will produce
saturation.
INDIABIX 1
A. 9.2 V 14. Refer to this figure. The value of VBE
B. 9.9 V is:
C. –9.9 V
D. –9.2 V
7. When a transistor is used as a switch,
it is stable in which two distinct regions?
A. saturation and active
B. active and cutoff
A. 0.25 mA
C. saturation and cutoff
B. 5.325 µA
D. none of the above A. 0.6 V
C. 1.065 µA
D. 10.425 µA 8. The term BJT is short for B. 0.7 V
A. base junction transistor. C. 1.2 V
2. A transistor amplifier has a voltage
B. binary junction transistor. D. 0.079 V
gain of 100. If the input voltage is 75 mV,
C. both junction transistor. 15. What are the two types of bipolar
the output voltage is:
D. bipolar junction transistor junction transistors?
A. 1.33 V
B. 7.5 V 9. For a silicon transistor, when a base- A. npn and pnp
C. 13.3 V emitter junction is forward-biased, it has B. pnn and nnp
D. 15 V a nominal voltage drop of C. ppn and nnp
A. 0.7 V. D. pts and stp
3. Refer to this figure. If VCE = 0.2 V, IC(sat)
B. 0.3 V.
is: 16. In this circuit βDC= 100 and VIN = 8 V.
C. 0.2 V.
The value of RB that will produce
D. VCC.
saturation is:
10. A certain transistor has IC = 15 mA
and IB = 167µA; βDC is:
A. 15
B. 167
C. 0.011
D. 90
A. 0.05 mA
11. Refer to this figure. The value of VCE
B. 2.085 mA
is:
C. 1.065 mA A. 92 kΩ
D. 7.4 mA B. 9.1 MΩ
4. What is the ratio of IC to IB? C. 100 kΩ
A. βDC D. 150 kΩ
B. hFE 17. The value of βDC
C. αDC A. is fixed for any particular
D. either βDC or hFE, but not αDC transistor.
5. For normal operation of a pnp BJT, the B. varies with temperature.
A. 9.9 V C. varies with IC.
base must be ________ with respect to
B. 9.2 V D. varies with temperature and
the emitter and ________ with respect
C. 0.7 V IC .
to the collector.
D. 19.3 V
A. positive, negative 18. A transistor data sheet usually
B. positive, positive 12. What does βDC vary with? identifies βDC as
C. negative, positive A. IC A. hre.
D. negative, negative B. ºC B. hFE.
C. both IC and ºC C. IC.
6. Refer to this figure. The value of VBC is:
D. IC , but not ºC D. VCE.
13. A BJT has an IB of 50µA and a βDC of 19. What is the ratio of IC to IE?
A. βDC
75; IC is:
B. βDC / (βDC + 1)
A. 375 mA
C. βDC
B. 37.5 mA
D. either βDC / (βDC + 1) or αDC, but
C. 3.75 mA
not βDC
D. 0.375 mA
INDIABIX 1
20. Refer to this figure. The value of βDC 27. What is (are) common fault(s) in a 4. For what kind of amplifications can
= 100 and VIN = 8 V. Determine IC(sat). BJT-based circuit? the active region of the common-
A. opens or shorts internal to the emitter configuration be used?
transistor A. Voltage
B. open bias resistor(s) B. Current
C. external opens and shorts on C. Power
the circuit board D. All of the above
D. all of the above
5. In the active region, while the
28. The dc load line on a family of collector-base junction is ________-
A. 18 mA
collector characteristic curves of a biased, the base-emitter is ________-
B. 7.92 mA
transistor shows the biased.
C. 1.8 mA
A. saturation region. A. forward, forward
D. 8 µA
B. cutoff region. B. forward, reverse
21. Which of the following is true C. active region. C. reverse, forward
for an npn or pnp transistor? D. all of the above D. reverse, reverse
A. I E = I B + IC
29. Refer to this figure. Determine the 6. A transistor can be checked using a(n)
B. IB = IC+ IE
minimum value of VIN from the following ________.
C. IC = IB + IE
that will saturate this transistor. A. curve tracer
D. none of the above
B. digital meter
22. What is the order of doping, from C. ohmmeter
heavily to lightly doped, for each region? D. Any of the above
A. base, collector, emitter
7. What range of resistor values would
B. emitter, collector, base
you get when checking a transistor for
C. emitter, base, collector
forward- and reverse-biased conditions
D. collector, emitter, base
by an ohmmeter?
23. In what range of voltages is the A. 100 to a few kΩ, exceeding
transistor in the linear region of its A. 13.21 V 100 kΩ
operation? B. 12.51 V B. Exceeding 100 kΩ, 100 to a few
A. 0 < VCE C. 0.7 V kΩ
B. 0.7 < VCE < VCE(max) D. 9.4 V C. Exceeding 100 kΩ, exceeding
C. VCE(max) > VCE 100 kΩ
D. 100Ω to a few kΩ, 100Ω to a
24. The magnitude of dark current in a few kΩ
phototransistor usually falls in what
BJT DEVICES
range? 8. Calculate minority current ICO if IC =
A. mA 1. How much is the base-to-emitter 20.002 mA and IC majority = 20 mA.
B. μA voltage of a transistor in the "on" state? A. 20 µA
C. nA A. 0V B. 0.002 µA
D. pA B. 0.7 V C. 2 nA
C. 0.7 mV D. 2 µA
25. A 35 mV signal is applied to the base D. Undefined
of a properly biased transistor with an r'e 9. What is (are) the component(s) of
= 8 and RC = 1 k. The output signal 2. How many layers of material does a electrical characteristics on the
voltage at the collector is: transistor have? specification sheets?
A. 3.5 V A. 1 A. On
B. 28.57 V B. 2 B. Off
C. 4.375 mV C. 3 C. Small-signal characteristics
D. 4.375 V D. 4 D. All of the above
26. What is (are) general-purpose/small- 3. Which of the following equipment can 10. In which region are both the
signal transistors case type(s)? check the condition of a transistor? collector-base and base-emitter
A. TO-18 A. Current tracer junctions forward-biased?
B. TO-92 B. Digital display meter (DDM) A. Active
C. TO-39 C. Ohmmeter (VOM) B. Cutoff
D. TO-52 D. All of the above C. Saturation
E. all of the above D. All of the above
INDIABIX 1
11. An example of a pnp silicon transistor A. Common-base
is a 2N4123. B. Common-collector
A. True C. Common-emitter
B. False D. Emitter-collector
12. Which of the following is (are) the 25. βdc for this set of collector
terminal(s) of a transistor? characteristics is within ________
A. Emitter percent of βac.
B. Base A. 100
C. Collector B. 116
D. All of the above C. 50
D. 110
13. Use this table of collector
characteristics to calculate βac at VCE = 15 19. Which of the following can be
V and IB = 30 µA. obtained from the last scale factor of a
curve tracer?
A. hFE A. 2
B. αdc B. 5
C. αac C. 7
D. βac D. 10
20. Calculate βac for IC = 15 mA and VCE = 26. Which of the following regions is
5 V. (are) part of the output characteristics of
A. 100 a transistor?
B. 106 A. Active
C. 50 B. Cutoff
D. 400 C. Saturation
14. Which of the following D. All of the above
configurations can a transistor set up? 27. How many individual pnp silicon
A. Common-base transistors can be housed in a 14-pin
B. Common-emitter plastic dual-in-line package?
C. Common-collector A. 4
D. All of the above B. 7
A. 200 C. 10
15. What does a reading of a large or
B. 180 D. 14
small resistance in forward- and reverse-
C. 220
biased conditions indicate when 28. In what decade was the first
D. None of the above
checking a transistor using an transistor created?
ohmmeter? 21. βdc = ________ A. 1930s
A. Faulty device A. IB / IE B. 1940s
B. Good device B. IC / IE C. 1950s
C. Bad ohmmeter C. I C / IB D. 1960s
D. None of the above D. None of the above
29. Most specification sheets are broken
16. Determine the value of α when β = 22. How many carriers participate in the down into ________.
100. injection process of a unipolar device? A. maximum ratings
A. 1.01 A. 1 B. thermal characteristics
B. 101 B. 2 C. electrical characteristics
C. 0.99 C. 0 D. All of the above
D. Cannot be solved with the D. 3
30. For a properly biased pnp transistor,
information provided 23. What are the ranges of the ac input let IC = 10 mA and IE = 10.2 mA. What is
17. Transistors are ________-terminal and output resistance for a common- the level of IB?
devices. base configuration? A. 0.2 A
A. 2 A. 10Ω–100Ω , 50 kΩ –1 MΩ B. 200 mA
B. 3 B. 50 kΩ –1 MΩ, 10 Ω – 100Ω C. 200 µA
C. 4 C. 10 Ω–100 kΩ, 50 Ω –1 kΩ D. 20.2 ma
D. 5 D. None of the above
31. What is (are) the component(s) of
18. Calculate βdc at VCE = 15 V and IB = 30 24. What is the most frequently most specification sheets provided by
µA. encountered transistor configuration? the manufacturer?
INDIABIX 1
A. Maximum ratings 10. What is the most important r
B. Thermal characteristics parameter for amplifier analysis?
C. Electrical characteristics A. r b′
D. All of the above B. rc ′
C. re′
32. What is βdc equal to?
A. IB / IE 11. An emitter-follower is also known as:
B. IC / IE A. common-emitter amplifier.
C. I C / IB B. common-base amplifier.
D. None of the above A. 2 mA C. common-collector amplifier.
B. 4 mA D. Darlington pair.
33. List the types of bipolar junction
transistors. C. 5 mA 12. The ________ model fails to account
A. ppn, npn D. 6 mA for the output impedance level of the
B. pnp, npn 5. Which of the following is referred to as device and the feedback effect from
C. npp, ppn the reverse transfer voltage ratio? output to input.
D. nnp, pnp A. hi A. hybrid equivalent
B. hr B. re
34. What is the ratio of the total width to
C. hf C. β
that of the center layer for a transistor?
D. ho D. Thevenin
A. 1:15
B. 1:150 6. Which of the following conditions 13. Refer to this figure. Calculate the
C. 15:1 must be met to allow the use of the value of VB.
D. 150:1 approximate approach in a voltage-
35. Which component of the collector divider bias configuration?
current IC is called the leakage current? A. βre > 10R2
A. Majority B. βre > 10R2
B. Independent C. βre < 10R2
C. Minority D. βre < 10R2
D. None of the above 7. Refer to this figure. Determine the
value of Av.
BJT AMPLIFIERS
A. 5V
B. 3.7 V
1. The current gain for the Darlington
C. 20 V
connection is ________.
D. 3V
A. β1· (β2 /2)
B. β1· β2 14. You have a need to apply an
amplifier with a very high power gain.
C. β1/β2
Which of the following would you
D. β1· (β2 -1) choose?
A. 49.6
2. Which of the following configurations B. 5 A. common-collector
has the lowest output impedance? C. 100 B. common-base
A. Fixed-bias D. 595 C. common-emitter
B. Voltage-divider D. emitter-follower
C. Emitter-follower 8. For a common-emitter amplifier, the
purpose of swamping is 15. What is the voltage gain of a
D. None of the above feedback pair connection?
A. to minimize gain.
3. Which of the h-parameters B. to reduce the effects of r'e A. 1
corresponds to re in a common-base C. to maximize gain. B. –1
configuration? D. no purpose. C. 100
A. hib D. –100
B. hfb 9. What is the typical value of the
current gain of a common-base 16. A common-emitter amplifier has
C. hrb ________ voltage gain, ________ current
D. hob configuration?
A. Less than 1 gain, ________ power gain, and
4. Refer to this figure. Find the value of B. Between 1 and 50 ________ input impedance.
IE. C. Between 100 and 200 A. high, low, high, low
D. Undefined
INDIABIX 1
B. high, high, high, low A. The output and input voltages D. the difference of the two input
C. high, high, high, high are 180º out of phase. voltages.
D. low, low, low, high B. Gain is smaller than 1.
30. The ________ model suffers from
C. Gain is larger than 1.
17. What is the range of the input being limited to a particular set of
impedance of a common-base operating conditions if it is to be
configuration? 24. For the common-emitter fixed-bias considered accurate.
A. A few ohms to a maximum of configuration, there is a ________ phase A. hybrid equivalent
50 Ω shift between the input and output B. re
B. 1 kΩ to 5 kΩ signals. C. β
C. 100 kΩ to 500 kΩ A. 0º D. Thevenin
D. 1 MΩ to 2 MΩ B. 45º
31. Under which of the following
C. 90º
18. The advantage that a Sziklai pair has condition(s) is the current gain Av ≈ β ?
D. 180º
over a Darlington pair is A. ro 10RC
A. higher current gain. 25. Which one of the following B. RB 10re
B. less input voltage is needed to configurations has the lowest input C. ro 10RC and RB 10re
turn it on. impedance? D. None of the above
C. higher input impedance. A. Fixed-bias
D. higher voltage gain. B. Common-base 32. The ________ configuration is
C. Emitter-follower frequently used for impedance
19. What is the typical range of the matching.
D. Voltage-divider?
output impedance of a common-emitter A. fixed-bias
configuration? 26. Which of the following represent(s) B. voltage-divider bias
A. 10Ω to 100Ω the advantage(s) of the system C. emitter-follower
B. 1 kΩ to 5 kΩ approach over the r-model approach? D. collector feedback
C. 40 kΩ to 50 kΩ A. Thevenin's theorem can be
D. 500 kΩ to 1 kΩ used. 33. Refer to this figure. You notice while
B. The effect of changing the load servicing this amplifier that the output
20. What is the unit of the parameter ho? signal at Vout is reduced from normal.
can be determined by a
A. Volt The problem could be caused by
simple equation.
B. Ohm
C. There is no need to go back to
C. Siemen
the ac equivalent
D. No unit
model and analyze the entire
21. Refer to this figure. Calculate the network.
value of Rin(tot). D. All of the above
27. The differential amplifier has
A. one input and one output.
B. two inputs and two outputs.
C. two inputs and one output.
A. an open C3.
D. one input and two outputs.
B. an open C2.
28. The emitter-follower configuration C. an open base-emitter of Q2.
has a ________ impedance at the input D. a shorted C2.
and a ________ impedance at the
34. When the bypass capacitor is
A. 37.7 kΩ output.
B. 3.77 kΩ removed from a common-emitter
A. low, low
C. 378 Ω amplifier, the voltage gain
B. low, high
A. increases.
D. 2.25 kΩ C. high, low
B. decreases.
22. What is the range of the current gain D. high, high
C. has very little effect.
for BJT transistor amplifiers? 29. The differential amplifier produces
35. Refer to this figure. Determine the
A. less than 1 outputs that are
value of VC.
B. 1 to 100 A. common mode.
C. above 100 B. in-phase with the input
D. All of the above voltages.
23. What does the negative sign in the C. the sum of the two input
voltage gain of the common-emitter voltages.
fixed-bias configuration indicate?
INDIABIX 1
46. In an un-bypassed emitter bias
configuration hie replaces ________ in
the re model.
A. re
B. β
C. βre
D. Ib
47. Which of the following is (are) true
regarding the input impedance for
A. 20 V A. 416 Ω frequencies in the midrange 100 kHz of a
B. 10 V B. 5 kΩ BJT transistor amplifier?
C. 5V C. 50 kΩ A. The input impedance is purely
D. 0V D. 500 Ω resistive.
41. Under which of the following B. It varies from a few ohms to
36. In a common-base amplifier, the
conditions is the output impedance of megohms.
input signal is connected to the
the network approximately equal to RC C. An ohmmeter cannot be used
A. base.
for a common-emitter fixed-bias to measure the small-
B. collector.
configuration? signal ac input impedance.
C. emitter.
A. ro 10RC D. All of the above
D. output.
B. ro < 10RC 48. For the collector dc feedback
37. Which of the following is (are) true to C. ro < ro configuration, there is a ________ phase
achieve a good overall voltage gain for D. ro > ro shift between the input and output
the circuit?
42. Which of the following gains is less signals.
A. The effect of Rs and RL must be
than 1 for a common-base A. 0º
considered as a product.
configuration? B. 45º
B. The effect of Rs and RL must
A. Ai C. 90º
be considered as a
B. Av D. 180º
product and evaluated
individually. C. Ap 49. A common-collector amplifier has
C. The effect of Rs and RL must be D. None of the above ________ input resistance, ________
evaluated individually. 43. Which of the following define(s) the current gain, and ________ voltage gain.
D. None of the above conversion efficiency? A. high, high, low
A. Ac power to the load/ac input B. high, low, low
38. To analyze the common-emitter
power C. high, low, high
amplifier, what must be done to
determine the dc equivalent circuit? B. Ac power to the load/dc power 50. The total gain of a multistage
A. leave circuit unchanged supplied amplifier is the ________.
B. replace coupling and bypass C. Dc output power/ac input A. sum of individual voltage gains
capacitors with opens power B. sum of dB voltage gains
C. replace coupling and bypass D. All of the above
51. Which of the following
capacitors with shorts 44. The dc emitter current of a transistor configurations has an output impedance
D. replace VCC with ground is 8 mA. What is the value of re? Zo equal to RC?
39. For the common-emitter amplifier ac A. 320 Ω A. Fixed-bias common-emitter
equivalent circuit, all capacitors are B. 13.3 kΩ B. Common-emitter voltage-
A. effectively shorts. C. 3.125 Ω divider with bypass
B. effectively open circuits. D. 5.75 Ω capacitor
C. not connected to ground. 45. Which of the following should be C. Common-emitter voltage-
D. connected to ground. done to obtain the ac equivalent of a divider without bypass
network? capacitor
40. Refer to this figure. If an emitter
A. Set all dc sources to zero D. All of the above
bypass capacitor was installed,
determine the value of Rin(base). B. Replace all capacitors by a 52. Refer to this figure. Find the value of
short-circuit equivalent. Rin(base).
C. Remove all elements bypassed
by the short-circuit
equivalent.
D. All of the above
INDIABIX 1
58. Which of the following is (are) true 64. The input impedance of a BJT
regarding the output impedance for amplifier is purely ________ in nature
frequencies in the midrange 100 kHz of a and can vary from a few ________ to
BJT transistor amplifier? ________.
A. The output impedance is purely A. resistive, ohms, megohms
resistive. B. capacitive, microfarads, farads
B. It varies from a few ohms to C. inductive, millihenrys, henrys
more than 2 MΩ. D. None of the above
C. An ohmmeter cannot be used
65. The ________ the source resistance
to measure the small-
A. 420 Ω and/or ________ the load resistance, the
signal ac output impedance.
B. 50 kΩ less the overall gain of an amplifier.
D. All of the above
A. smaller, smaller
C. 940 Ω
59. Refer to this figure. The output signal B. smaller, larger
D. 100.8Ω
from the first stage of this amplifier is 0 C. larger, smaller
53. For a common-emitter amplifier, the V. The trouble could be caused by D. larger, larger
purpose of the emitter bypass capacitor
66. Refer to this figure. If an emitter
is
bypass capacitor was installed, what
A. no purpose, since it is shorted
would the new Av be?
out by RE.
B. to reduce noise.
C. to despike the supply voltage.
D. to maximize amplifier gain.
54. For BJT amplifiers, the ________ gain
typically ranges from a level just less
than 1 to a level that may exceed 1000. A. an open C4.
A. voltage B. an open C2.
B. current C. an open base-emitter of Q1.
C. impedance D. a shorted C4.
A. 4.96
D. All of the above
60. What is the limit of the efficiency B. 125
55. The loaded voltage gain of an defined by = Po / Pi? C. 398
amplifier is always more than the no- A. Greater than 1 D. 600
load level. B. Less than 1
67. A Darlington pair provides beta
A. True C. Always 1
________ for ________ input resistance.
B. False D. None of the above
A. multiplication, decreased
56. Which of the following 61. What is re equal to in terms of h B. multiplication, increased
configurations has a voltage gain of –RC parameters? C. division, decreased
/re? A. hre / hoe
68. A Darlington pair amplifier has
A. Fixed-bias common-emitter B. (hre + 1) / hoe
A. high input impedance and high
B. Common-emitter voltage- C. hie – (hre / hoe)(1 + hfe)
voltage gain.
divider with bypass D. hfe
B. low input impedance and low
capacitor E. none of the above
voltage gain.
C. Fixed-bias common-emitter
62. What is the controlling current in a C. a voltage gain of about 1 and a
and voltage-divider with
common-base configuration? low input impedance.
bypass capacitor
A. Ie D. a low voltage gain and a high
D. Common-emitter voltage-
B. Ic input impedance.
divider without bypass
C. Ib
capacitor
57. An emitter-follower amplifier has an FET DEVICES
63. Which of the following techniques
input impedance of 107 kΩ. The input
can be used in the sinusoidal ac analysis
signal is 12 mV. The approximate output
of transistor networks? 1. Which of the following ratings
voltage is (common-collector)
A. Small-signal appear(s) in the specification sheet for
A. 8.92 V
B. Large-signal an FET?
B. 112 mV
C. Small- or large-signal A. Voltages between specific
C. 12 mV
D. None of the above terminals
D. 8.9 mV
B. Current levels
INDIABIX 1
C. Power dissipation A. 0.25 14. The drain current will always be one-
D. All of the above B. 0.5 fourth of IDSS as long as the gate-to-
C. 1 source voltage is ________ the pinch-off
2. What is the level of drain
D. 0 value.
current ID for gate-to-source voltages
A. one-fourth
VGS less than (more negative than) the 9. Referring to this transfer curve,
B. one-half
pinch-off level? determine ID at VGS = 2 V.
C. three-fourths
A. zero amperes
B. IDSS
C. Negative value 15. The transfer curve is not defined by
D. Undefined Shockley's equation for the ________.
A. JFET
3. What is the level of IG in an FET?
B. depletion-type MOSFET
A. Zero amperes
C. enhancement-type MOSFET
B. Equal to ID
D. BJT
C. Depends on VDS
A. 0.444 mA
D. Undefined 16. What is the purpose of adding two
B. 1.333 mA
Zener diodes to the MOSFET in this
4. What is the range of an FET's C. 0.111 mA
figure?
input impedance? D. 4.444 mA
A. 10Ω to 1 kΩ 10. Which of the following controls the
B. 1 kΩ to 10 kΩ level of ID?
C. 50 kΩ to 100 kΩ A. VGS
D. 1 MΩ to several hundred MΩ B. VDS
5. Which of the following applies to a C. IG
safe MOSFET handling? D. VDG
A. Always pick up the transistor by 11. It is the insulating layer of ________
the casing. in the MOSFET construction that A. To reduce the input impedance
B. Power should always be off accounts for the very desirable high B. To protect the MOSFET for
when network changes are made. input impedance of the device. both polarities
C. Always touch ground before A. SiO C. To increase the input
handling the device. B. GaAs impedance
D. All of the above C. SiO2 D. None of the above
6. Refer to this portion of a specification D. HCl 17. Referring to the following transfer
sheet. Determine the values of reverse- 12. The BJT is a ________ device. The curve, determine the level of VGS when
gate-source voltage and gate current if FET is a ________ device. the drain current is 20 mA.
the FET was forced to accept it. A. bipolar, bipolar
B. bipolar, unipolar
C. unipolar, bipolar
D. unipolar, unipolar
13. Referring to this transfer curve.
Calculate (using Shockley's equation)
VGS at ID = 4mA.
A. 25 Vdc, –200 nAdc

B. –25 Vdc, 10 mAdc
C. –6 Vdc, –1.0 nAdc
A. 1.66 V
B. –1.66 V
7. At which of the following condition(s) C. 0.66 V
is the depletion region uniform? D. –0.66 V
A. No bias
18. The region to the left of the pinch-off
B. VDS > 0 V
locus is referred to as the ________
C. VDS = VP A. 2.54 V region.
D. None of the above B. –2.54 V A. saturation
8. What is the ratio of ID / IDSS for C. –12 V B. cutoff
VGS = 0.5 VP? D. Undefined
INDIABIX 1
C. ohmic A. 2 A. Reduced channel resistance
D. All of the above B. 3 B. Higher current and power
C. 4 ratings
19. Refer to the following curves.
D. 3 or 4 C. Faster switching time
Calculate ID at VGS = 1 V.
D. All of the above
25. Refer to the following figure.
Calculate VGS at ID = 8 mA for k = 0.278 × 32. Hand-held instruments are available
–2 2
10 A/V . to measure ________ for the BJT.
A. βDC
B. IDSS
C. VP
D. All of the above
33. Which of the following input
impedances is not valid for a JFET?
10
A. 10 Ω
9
A. 3.70 V B. 10 Ω
8
B. 5.36 V C. 10 Ω
11
C. 7.36 V D. 10 Ω
D. 2.36 V
34. Refer to the following characteristic
26. The level of VGS that results in ID = 0 curve. Calculate the resistance of the
mA is defined by VGS = ________. FET at VGS = –0.25 V if ro = 10 kΩ.
A. 8.167 mA A. VGS(off)
B. 4.167 mA B. VP
C. 6.167 mA C. VDS
D. 0.616 mA D. None of the above
20. Which of the following transistor(s) 27. Which of the following FETs has the
has (have) depletion and enhancement lowest input impedance?
types? A. JFET
A. BJT B. MOSFET depletion-type
C. MOSFET enhancement-type A. 1.1378 kΩ
B. JFET
D. None of the above B. 113.78 Ω
C. MOSFET
D. None of the above C. 11.378 Ω
28. Which of the following applies
D. 11.378 kΩ
21. The three terminals of the JFET are to MOSFETs?
the ________, ________, and ________. A. No direct electrical connection 35. Which of the following is (are)
A. gate, collector, emitter between the gate not an FET?
B. base, collector, emitter terminal and the channel A. n-channel
C. gate, drain, source B. Desirable high input impedance B. p-channel
D. gate, drain, emitter C. Uses metal for the gate, drain, C. p-n channel
and source connections D. n-channel and p-channel
22. Which of the following is (are) the D. All of the above
terminal(s) of a field-effect transistor
(FET). 29. At which of the following is the level FET AMPLIFIERS
A. Drain of VDS equal to the pinch-off voltage?
B. Gate A. When ID becomes equal to IDSS
1. A common-gate amplifier is similar in
C. Source B. When VGS is zero volts
configuration to which BJT amplifier?
D. All of the above C. IG is zero
A. common-emitter
D. All of the above
23. A BJT is a ________-controlled B. common-collector
device. The JFET is a ________ - 30. Which of the following represent(s) C. common-base
controlled device. the cutoff region for an FET? D. emitter-follower
A. voltage, voltage A. ID = 0 mA
2. The theoretical efficiency of a class D
B. voltage, current B. VGS = VP
amplifier is
C. current, voltage C. IG = 0
A. 75%.
D. current, current D. All of the above
B. 85%.
24. How many terminals can a MOSFET 31. Which of the following is (are) the C. 90%.
have? advantage(s) of VMOS over MOSFETs? D. 100%.
INDIABIX 1
3. A common-source amplifier is similar A. common-emitter
in configuration to which BJT amplifier? B. common-collector
A. common-base C. common-base
B. common-collector D. common-gate
C. common-emitter
9. Referring to this figure, calculate Av
D. emitter-follower
for yos = 58µS.
4. Refer to this figure. If R6 opened, the
signal at the drain of Q1 would
A. 176 mV p-p
B. 88 mV p-p
C. 48 mV p-p
D. 24 mV p-p
14. Referring to the following figure,
A. increase. calculate gm for VGSQ = –1.25 V.
B. decrease. A. –7.29
C. remain the same. B. –7.50
D. distort. C. –8.05
D. –8.55
5. Refer to this figure. Find the value of
VD. 10. Refer to this figure. If Vin = 1 V p-p, the
output voltage Vout would be
A. 2 mS
B. 2.5 mS
C. 2.75 mS
D. 3.25 mS
15. Referring to this figure, calculate the

value of RD if the ac gain is 10. Assume
A. 20 V VGSQ = ¼Vp.
B. 11 V A. undistorted.
C. 10 V B. clipped on the negative peaks.
D. 9V C. clipped on the positive peaks.
D. 0 Vp-p
6. A BJT is a ________-controlled device.
11. Use the following equation to
A. current
B. voltage calculate gm for a JFET having IDSS = 10
mA, VP = –5 V, and VGSQ = –2.5 V.
7. Referring to this figure, calculate Av if
rd = 19 kΩ.
[ ] A. 2.2 kΩ
| |
B. 2.42 kΩ
C. 2.62 kΩ
A. 2 mS
D. 2.82 kΩ
B. 3 mS
C. 4 mS 16. Where do you get the level of gm and
D. 5 mS rd for an FET transistor?
A. from the dc biasing
12. For what value of ID is gm equal to 0.5
arrangement
gm0?
A. –2.85 B. from the specification sheet
A. 0 mA
B. –3.26 C. from the characteristics
B. 0.25 IDSS
C. –2.95 D. All of the above
C. 0.5 IDSS
D. –3.21 D. IDSS 17. The class D amplifier uses what type
8. A common-drain amplifier is similar in of transistors?
13. Refer to this figure. If Vin = 20 mV p-p
configuration to which BJT amplifier? A. JFETs
what is the output voltage?
INDIABIX 1
B. BJTs
C. MOSFETs
D. any of the above
18. What is (are) the function(s) of the
coupling capacitors C1 and C2 in an FET
circuit?
A. to create an open circuit for dc
analysis
B. to isolate the dc biasing
arrangement from the applied
signal and load A. 1.85 kΩ
C. to create a short-circuit B. 1.92 kΩ
C. 2.05 kΩ A. 2 mS
equivalent for ac analysis
D. 2.15 kΩ B. 3 mS
D. All of the above
C. 4 mS
19. An FET is a ________-controlled 24. Which of the following is a required
D. 5 mS
device. condition to simplify the equations for
Zo and Av for the self-bias configuration? 31. Which type of FETs can operate with
A. current
A. rd ≤10RD a gate-to-source Q-point value of 0 V?
B. voltage
B. rd = RD A. JFET
20. What is the input resistance C. rd ≥ 10RD B. E-MOSFET
(Rin(source)) of a common-gate amplifier? D. None of the above C. D-MOSFET
A. Rs
25. The steeper the slope of the ID versus 32. On which of the following
B. (1+ gm) || Rs
VGS curve, the ________ the level of gm. parameters does rd have no or little
C. 1 / gm
A. less impact in a source-follower
B. same configuration?
21. There is a ________º phase inversion C. greater A. Zi
between gate and source in a source B. Zo
follower. 26. What is the typical value for the
C. Av
A. 0 input impedance Zi for JFETs? @
D. All of the above
B. 90 A. 100 kΩ
B. 1 MΩ 33. Refer to this figure. For midpoint
C. 180
C. 10 MΩ biasing, ID would be
D. 1000 MΩ
22. Refer to this figure. If C4 opened, the
signal voltage at the drain of Q1 would 27. MOSFETs make better power
switches than BJTs because they have
A. lower turn-off times.
B. lower on-state resistance.
C. a positive temperature
coefficient.
D. all of the above
28. When VGS = 0.5 Vp gm is ________ the
maximum value.
A. one-fourth A. 10 mA.
A. increase.
B. one-half B. 7.5 mA.
B. decrease.
C. three-fourths C. 5 mA.
C. remain the same.
D. 2.5 mA.
D. distort. 29. MOSFET digital switching is used to
produce which digital gates? 34. Class D amplifiers differ from all
23. Referring to this figure, find Zo if yos =
A. inverters other classes of amplifiers because
20µS.
B. NOR gates A. the output transistors are
C. NAND gates operated as switches.
D. all of the above B. of their very low input
capacitance.
30. Referring to the transfer
C. of their high-frequency
characteristics shown below, calculate response capabilities.
gm at VGSQ = –1 V. D. they employ dual MOSFETs
INDIABIX 1
35. Refer to this figure. If R7 were to A. 100 kΩ
decrease in value, Vout would B. 80 kΩ
C. 25 kΩ
D. 5 kΩ
40. Referring to this figure, calculate Zo
if rd = 19 kΩ.
A. 362.52 Ω
B. 340.5 Ω
A. increase. C. 420.5 Ω
B. decrease. D. 480.9 Ω
C. remain the same. 45. The more horizontal the
D. distort characteristic curves on the drain
36. Refer to this figure. If ID = 4 mA, find characteristics, the ________ the output
A. 1.75 kΩ impedance.
the value of VGS.
B. 1.81 kΩ A. less
C. 1.92 kΩ B. same
D. 2.00 kΩ C. greater
41. Referring to this figure, calculate Zi if 46. Refer to this figure. If gm = 4000 mS
rd = 19 kΩ. and a signal of 75 mVrms is applied to the
gate, calculate the p-p output voltage.
A. 10.8 V
B. 6V
C. –0.7 V
D. –6 V
A. 2.42 MΩ
37. Which FET amplifier(s) has (have) a
B. 2.50 MΩ
phase inversion between input and
C. 2.53 MΩ A. 990 mV
output signals?
D. 2.59 MΩ B. 1.13 V p-p
A. common-gate
C. 2.8 V p-p
B. common-drain 42. For the fixed-bias configuration, if rD
D. 990 V p-p
C. common-source < 10 RD , then Zo = ________.
D. all of the above A. RD 47. Refer to this figure. The approximate
B. RD || rD value of Rin is
38. What common factor determines the
voltage gain and input resistance of a C. RG
common-gate amplifier? D. -gm · (RD || rD )
A. RD 43. Referring to this figure, obtain gm for
B. RL ID = 6 mA.
C. gm
39. Referring to the figure below,
determine the output impedance for VGS
= –3 V at VDS = 5 V.
A. 100 MΩ.
B. 1.5 kΩ.
C. 3.3 kΩ.
A. 2.83 mS
B. 3.00 mS D. 48 MΩ.
C. 3.25 mS 48. Which of the following is (are)
D. 3.46 mS related to depletion-type MOSFETs?
44. Referring to this figure, calculate Zo A. VGSQ can be negative, zero, or
for VGSQ = –3.2 V. positive.
INDIABIX 1
B. gm can be greater or smaller B. high input impedance
than gm0. C. low power consumption
C. ID can be larger than IDSS. D. All of the above
D. All of the above
54. CMOS digital switches use
49. Refer to this figure. If C2 shorted, Vout A. n-channel and p-channel D-
would MOSFETs in series.
B. n-channel and p-channel D-
MOSFETs in parallel.
C. n-channel and p-channel E-
MOSFETs in series.
D. n-channel and p-channel E- A. 2.2 kΩ
MOSFETs in parallel. B. 1.2 kΩ
C. 600 kΩ
55. What is the range of gm for JFETs?
D. 100 kΩ
A. increase. A. 1 µS to 10µS
B. decrease. B. 100µS to 1000 µS 61. A JFET cascade amplifier employs
C. remain the same. C. 1000 µS to 5000 µS A. 2 common-gate amplifiers.
D. distort. D. 10000 µS to 100000 µS B. 2 common-source amplifiers.
C. 1 common-gate and 1
50. The input resistance at the gate of a 56. Calculate gm and rd if yfs = 4 mS and
common-source amplifier.
FET is extremely yos = 15ΩS.
D. 1 common-gate and 1 common-
A. high. A. 4 mS, 66.7 kΩ
drain amplifier.
B. low. B. 4 mS, 15 kΩ
C. 66.7 kΩ, 4 mS 62. E-MOSFETs are generally used in
51. Determine the value for RD if the ac D. None of the above switching applications because
gain is 8. A. of their very low input
57. What limits the signal amplitude in
capacitance.
an analog MOSFET switch?
B. of their threshold
A. the switch input capacitance
characteristic (VGS(th)).
B. VGS(th)
C. of their high-frequency
C. the switch's power handling
response capabilities.
D. VDS
D. of their power handling.
58. Input resistance of a common-drain
63. For an FET small-signal amplifier,
amplifier is
one could go about troubleshooting a
A. RG || RIN(gate).
circuit by ________.
A. 1.51 kΩ B. RG + RIN(gate).
A. viewing the circuit board for
B. 1.65 kΩ C. RG.
poor solder joints
C. 1.85 kΩ D. RIN(gate).
B. using a dc meter
D. 2.08 kΩ
59. Refer to this Figure. If Vin was C. applying a test ac signal
52. Referring to this figure, calculate Zi increased in amplitude a little, the signal D. All of the above
for yos = 20 µS. Assume VGSQ = −2.2V. voltage at the source of Q2 would
64. The E-MOSFET is quite popular in
________ applications.
A. digital circuitry
B. high-frequency
C. buffering
D. All of the above
65. Referring to this figure, calculate Av if
yos = 20 µS.
A. increase.
A. 300.2 Ω B. decrease.
B. 330.4 Ω C. remain the same.
C. 340.5 Ω D. distort.
D. 350.0 Ω
60. Refer to this figure. If VGS = –6 V,
53. FET amplifiers provide ________. calculate the value of RS that will provide
A. excellent voltage gain this value.
INDIABIX 1
A. –3.48 A. 19.2 V B. 46.13 Hz
B. –3.56 B. –6 V C. 238.73 Hz
C. –3.62 C. 10.8 V D. 1575.8 Hz
D. –4.02 D. 30 V
5. The smaller capacitive elements of the
66. Referring to this figure, calculate Zo 70. If ID = IDSS / 2, gm = ________ gmo. design will determine the ________
if yos = 40µS. A. 1 cutoff frequencies.
B. 0.707 A. low
C. 0.5 B. mid
C. high
6. What is the range of the capacitor Cds?
BJT AND FET FREQUENCY A. 0.01 to 0.1 pF
RESPONSE B. 0.1 to 1 pF
C. 0.1 to 1 nF
1. A change in frequency by a factor of D. 0.1 to 1 F
________ is equivalent to 1 octave. 7. An amplifier rated at 30-W output is
A. 2.92 kΩ
A. 2 connected to a 5- speaker. Calculate the
B. 3.20 kΩ
B. 10 input voltage for the rated output if the
C. 3.25 kΩ
C. 5 amplifier voltage gain is 20 dB.
D. 3.75 kΩ
D. 20 A. 1.225 mV
67. In a common-source amplifier, the B. 12.25 mV
2. What is the ratio of the capacitive
purpose of the bypass capacitor, C2, is to C. 122.5 mV
reactance XCS to the input resistance RI
A. keep the source effectively at D. 1.225 V
of the input RC circuit of a single-stage
ac ground.
BJT amplifier at the low-frequency 8. A 3-dB drop in hfe will occur at a
B. provide a dc path to ground.
cutoff? frequency defined by ________.
C. provide coupling to the input.
A. 0.25 A. fα
D. provide coupling to the load.
B. 0.50 B. fβ
68. Refer to this figure. The voltage gain C. 0.75 C. 1
is D. 1.0 D. 2
3. For which of the following frequency 9. An amplifier rated at 30-W output is
region(s) can the coupling and bypass connected to a 5- speaker. Calculate the
capacitors no longer be replaced by the input power required for full power
short-circuit approximation? output if the power gain is 20 dB.
A. Low-frequency A. 3 mW
B. Mid-frequency B. 30 mW
C. High-frequency C. 300 mW
D. All of the above D. 3W
4. Determine the lower cutoff frequency 10. The larger capacitive elements of the
A. 1.2. of this network. design will determine the ________
B. 2.4. cutoff frequency.
C. 4.4. A. low
D. 8.8. B. mid
69. Refer to this figure. If ID = 4 mA, IDSS = C. high
16 mA, and VGS(off) = –8 V, find VDS. 11. Which of the following elements is
(are) important in determining the gain
of the system in the high-frequency
region?
A. Interelectrode capacitances
B. Wiring capacitances
C. Miller effect capacitance
D. All of the above
12. The input power to a device is 10,000
W at 1000 V. The output power is 500 W,
and the output impedance is 100Ω. Find
A. 15.8 Hz the voltage gain in decibels.
INDIABIX 1
A. –30.01 dB 27. In the hybrid π or Giacoletto model,
20. Determine the break frequency for
B. –20.0 dB which one of the following does rb
this circuit.
C. –13.01 dB include?
D. –3.01 dB A. Base spreading resistance
B. Base contact
13. By what factor does an audio level
C. Base bulk
change if the power level changes from
D. All of the above
4 W to 4096 W?
A. 2 28. What is the ratio of the output
B. 4 voltage to the input voltage at the cutoff
C. 6 A. 15.915 Hz frequencies in a normalized frequency
D. 8 B. 159.15 Hz response plot?
C. 31.85 Hz A. 0.25
14. For audio systems, the reference D. 318.5 Hz B. 0.50
level is generally accepted as ________.
21. What is the ratio of the common C. 0.707
A. 1 mW
logarithm of a number to its natural D. 1
B. 1W
C. 10 mW logarithm? 29. Which of the following statements is
D. 100 mW A. 0.435 true for a square-wave signal?
B. 2 A. It is composed of both even and
15. What is the range of the capacitors C. 2.3 odd harmonics.
Cgs and Cgd? D. 3.2 B. It is composed only of odd
A. 1 to 10 pF
22. Which of the following harmonics.
B. 1 to 10 nF
configurations does (do) not involve the C. It is composed only of even
C. 1 to 10 F
Miller effect capacitance? harmonics.
D. 1 to 10 F
A. Common-emitter D. The harmonics waveforms are
B. Common-base also square waves.
16. For the low-frequency response of a
BJT amplifier, the maximum gain is C. Common-collector 30. A change in frequency by a factor of
where ________ . D. All of the above ________ is equivalent to 1 decade.
A. RB = 0 Ω 23. What magnitude voltage gain A. 2
B. RC = 0 Ω corresponds to a decibel gain of 50? B. 10
C. RE = 0 Ω A. 31.6238 C. 5
B. 316.228 D. 20
17. In the input RC circuit of a single-
stage BJT, by how much does the base C. 3162.38 31. Which of the following capacitors is
voltage lead the input voltage at the D. 31623.8 (are) included in Ci for the high-
cutoff frequency in the low-frequency 24. By what other name(s) are the cutoff frequency region of a BJT or FET
region? frequencies in a frequency response plot amplifier?
A. About 0º called? A. Input wiring capacitance Cw1
B. 45º A. Corner frequency B. The transition capacitance (Cbe /
C. About 90º B. Break frequency Cqs)
D. None of the above C. Half-power frequency C. Miller capacitance CM1
D. All of the above D. All of the above
18. What is the normalized gain
expressed in dB for the cutoff 32. In the input RC circuit of a single-
frequencies? 25. The ________-frequency response of stage BJT, by how much does the base
A. –3 dB a transformer-coupled system is voltage lead the input voltage for
B. +3 dB calculated primarily by the stray frequencies much larger than the cutoff
C. –6 dB capacitance between the turns of the frequency in the low-frequency region?
D. –20 dB primary and secondary windings. A. About 0º
A. low B. 45º
19. Which of the low-frequency cutoffs B. mid C. About 90º
determined by CS, CC, or CE will be the C. high D. None of the above
predominant factor in determining the
low-frequency response for the 26. logea = ________ log10a 33. In the ________-frequency region,
complete system? A. 2.3 the capacitive elements of importance
A. lowest B. 2.718 are the interelectrode (between
B. middle C. e terminals) capacitances internal to the
C. highest D. 1.414 active device and the wiring capacitance
D. None of the above between the leads of the network.
INDIABIX 1
A. low The output voltage is most likely to be C. summing amplifier
B. mid D. comparator
C. high
11. Refer to the given figure. If Vin = 5 V,
34. What is the ratio of the output power the rate of change of the output voltage
to the input power at the cutoff in response to a single pulse input is:
frequencies in a normalized frequency
response plot?
A. 0.25 A. a square wave.
B. 0.50 B. a triangle wave.
C. 0.707 C. a sine wave.
D. 1 D. no output.
6. Refer to the given figure. What is the A. 15.2 mV/μs
output voltage? B. 1.52 V/μs
BASIC OP AMP CIRCUITS C. 1.52 mV/μs
D. 15.2 V/μs
1. A Schmitt trigger is
12. In a flash A/D converter, the priority
A. a comparator with only one
encoder is used to
trigger point.
A. 2V A. select the first input.
B. a comparator with hysteresis.
B. –2 V B. select the highest value input.
C. a comparator with three trigger
C. +Vsat C. select the lowest value input.
points.
D. –Vsat D. select the last input.
D. none of the above.
7. If an op-amp comparator has a gain of 13. What circuit produces an output that
2. Refer to the given figure. This circuit is
100,000, an input difference of 0.2 mV approximates the area under the curve
known as
above reference, and a supply of ± 12 V, of an input function?
the output will be A. integrator
A. 20 V. B. differentiator
B. 12 V. C. summing amplifier
C. 10 V. D. comparator
D. 15 V. 14. An op-amp has an open-loop gain of
A. a noninverting amplifier. 8. A comparator with a Schmitt trigger 90,000. Vsat = ±13 V. A differential
B. a differentiator. has voltage of 0.1 Vp-p is applied between the
C. an integrator. A. two trigger levels. inputs. What is the output voltage?
D. a summing amplifier. B. a fast response. A. 13 V
3. The output of a Schmitt trigger is a C. a slow response. B. –13 V
A. pulse waveform. D. one trigger level. C. 13 Vp-p
B. sawtooth waveform. D. 26 Vp-p
9. Refer to the given figure. Determine
C. sinusoidal waveform. 15. Refer to the given figure. Determine
the upper trigger point.
D. triangle waveform. the output voltage.
4. Refer to the given figure. This circuit is
known as
A. 1V
B. –1 V
A. V(out)max
C. +Vsat
B. –V(out)max
A. a noninverting amplifier. D. –Vsat
C. –1.41 V
B. a differentiator. D. +1.41 V 16. A good example of hysteresis is a(n)
C. an integrator. A. AM radio.
D. a summing amplifier. 10. In a(n) ________, when the input
B. thermostat.
voltage exceeds a specified reference
5. Refer to the given figure. A square- C. alarm clock.
voltage, the output changes state.
wave input is applied to this amplifier. D. none of the above
A. integrator
B. differentiator
INDIABIX 1
17. To reduce the effects of noise A. summer B. junction
resulting in erratic switching of output B. nonzero-level detector C. zener
states of a comparator, you can use C. averaging amplifier D. varactor
A. the upper trigger point. D. summer and nonzero-level
29. A comparator with hysteresis is
B. the lower trigger point. detector
sometimes known as a(n)
C. nonzero-level detection.
23. A differentiator is used to measure A. integrator.
D. hysteresis.
A. the sum of the input voltages. B. differentiator.
18. Refer to the given figure. With the B. the difference between two C. Schmitt trigger.
inputs shown, determine the output voltages. D. none of the above
voltage. C. the area under a curve.
30. Which of the following are variations
D. the rate of change of the input
of the basic summing amplifier?
voltage.
A. averaging amplifier
24. Refer to the given figure. Determine B. scaling amplifier
the lower trigger point. C. both of the above
A. 7V SEMICONDUCTOR DIODES
B. –7 V
C. +Vsat 1. One eV is equal to ________ J.
D. –Vsat A. 6.02 × 1023
–19
B. 1.6 × 10
19. Refer to the given figure. Determine C. 6.25 × 10
18
the output voltage, VOUT. A. +V(out)max D. 1.66 × 10
–24
B. –V(out)max
C. –2.47 V 2. The diode ________.
D. +2.47 V A. is the simplest of
semiconductor devices
25. A(n) ________ amplifier is a B. has characteristics that closely
summing amplifier with a closed-loop match those of a simple switch
gain equal to the reciprocal of the C. is a two-terminal device
A. 1.05 V number of inputs. D. All of the above
B. –0.35 V A. averaging
B. scaling 3. It is not uncommon for a germanium
C. 0.35 V diode with an Is in the order of 1–2 µA at
D. –1.05 V C. none of the above
25°C to have leakage current of 0.1 mA
20. What is (are) the necessary 26. ________ is a mathematical process at a temperature of 100°C.
component(s) for the design of a for determining the rate of change of a A. True
bounded comparator? function. B. False
A. rectifier diodes A. Integration
B. Differentiation 4. What does a high resistance reading in
B. zener diodes both forward- and reverse-bias
C. both of the above C. Summing
D. Comparatoring directions indicate?
21. Refer to the given figure. What is the A. A good diode
output voltage? 27. An integrator circuit B. An open diode
A. uses a resistor in its feedback C. A shorted diode
circuit. D. A defective ohmmeter
B. uses an inductor in its feedback
circuit. 5. Which capacitance dominates in the
C. uses a capacitor in its reverse-bias region?
feedback circuit. A. depletion
D. uses a resistor in its feedback B. conversion
A. 0.5 V circuit or uses a capacitor in its C. 40 Ω Diffusion
B. –0.5 V feedback circuit D. 140 Ω None of the above
C. 2V 28. In a comparator with output 6. What is the state of an ideal diode in
D. –2 V bounding, what type of diode is used in the region of nonconduction?
22. What type(s) of circuit(s) use the feedback loop? A. An open circuit
comparators? A. Schottky B. A short circuit
C. Unpredictable
INDIABIX 1
D. Undefined 15. Which of the following devices can D. 280 A
check the condition of a semiconductor
7. How many orbiting electrons does the 24. Which of the following elements is
diode?
germanium atom have? most frequently used for doping pure Ge
A. Digital display meter (DDM)
A. 4 or Si?
B. Multimeter
B. 14 A. Boron
C. Curve tracer
C. 32 B. Gallium
D. All of the above
D. 41 C. Indium
16. Which of the following is an atom D. All of the above
8. How many terminals does a diode
composed of?
have? 25. Calculate the temperature
A. Electrons
A. 1 coefficient in %/° C of a 10-V nominal
B. Protons
B. 2 Zener diode at 25° C if the nominal
C. Neutrons
C. 3 voltage is 10.2 V at 100° C.
D. All of the above
D. 4 A. 0.0238
17. The condition of a semiconductor B. 0.0251
9. What unit is used to represent the
diode can be determined quickly using a C. 0.0267
level of a diode forward current IF?
________. D. 0.0321
A. pA
A. DDM
B. nA 26. In general, LEDs operate at voltage
B. VOM
C. µA levels from ________ V to ________ V.
C. curve tracer
D. mA A. 1.0, 3.0
D. Any of the above
B. 1.7, 3.3
10. The diffused impurities with
18. How many valence electrons does a C. 0.5, 4.0
________ valence electrons are called
silicon atom have? D. None of the above
donor atoms.
A. 1
A. 4 27. Determine the nominal voltage for
B. 2
B. 3 the Zener diode at a temperature of
C. 3
C. 5 120° C if the nominal voltage is 5.1 volts
D. 4
D. 0 at 25° C and the temperature coefficient
19. What is the resistor value of an ideal is 0.05%/° C.
11. In which of the following color(s) is
diode in the region of conduction? A. 4.6 V
(are) LEDs presently available?
A. 0Ω B. 4.86 V
A. Yellow
B. 5kΩ C. 5.1 V
B. White
C. Undefined D. 5.34 V
C. Orange
D. Infinity
D. All of the above 28. What is the maximum power rating
20. Calculate the power dissipation of a for LEDs?
12. Determining rd to a high degree of
diode having ID = 40 mA. A. 150 mW
accuracy from a characteristic curve is
A. 28 mW B. 500 mW
very accurate.
B. 28 W C. 1W
A. True
C. 280 mW D. 10 W
B. False
D. Undefined
29. The ________ diode model is
13. What is the range of the operating
21. Calculate static resistance RD of a employed most frequently in the
voltage level for LEDs?
diode having ID = 30 mA and VD = 0.75 V. analysis of electronic systems.
A. 5–12 mV
A. 25 A. ideal device
B. 1.7–3.3 V
B. 40 B. simplified
C. 5–12 V
C. 0.04 C. piecewise-linear
D. 20–25 V
D. 0.025
30. What is the value of the transition
14. At what kind of operating frequency
22. In which of the following is the light capacitance for a silicon diode when VD =
diffusion or transition is a capacitor
intensity measured? 0? (Choose the best answer.)
represented in parallel with the ideal
A. Candela A. 1 pF
diode?
B. Efficacy B. 3 pF
A. Low frequency
C. Flux C. 5 pF
B. Moderate frequency
D. Illumination D. 10 pF
C. Mid frequency
D. Very high frequency 23. Calculate ID if RD = 30 and VD = 0.84 V. 31. Which of the following ratings is
A. 28 mA true?
B. 0.028 mA
C. 2.8 A
INDIABIX 1
A. Si diodes have higher PIV and A. clipper or limiter
narrower temperature B. clamper
ranges than Ge diodes. C. IC voltage regulator
B. Si diodes have higher PIV and D. none of the above
wider temperature
4. Each diode in a center-tapped full-
ranges than Ge diodes.
wave rectifier is ________ -biased and A. 25 V
C. Si diodes have lower PIV and
conducts for ________ of the input cycle. B. 15 V
narrower temperature
A. forward, 90º C. –25 V
ranges than Ge diodes.
B. reverse, 180º D. –15 V
D. Si diodes have lower PIV and
C. forward, 180º
wider temperature 10. In a regulated supply, what term
D. reverse, 90º
ranges than Ge diodes. describes how much change occurs in
5. What is the voltage measured from the output voltage for a given change in
32. The ideal diode is a(n) ________
the negative terminal of C4 to the the input voltage?
circuit in the region of nonconduction.
negative terminal of the transformer? A. load regulation
A. open
B. voltage regulator
B. short
C. line regulation
33. Which capacitance dominates in the D. ripple voltage
forward-bias region?
11. A short circuit has a ________ drop
A. Diffusion
across its terminals, and the current is
B. Transition A. –10 V limited only by the surrounding network.
C. Depletion
B. –20 V A. 5V
D. None of the above C. 10 V B. 0V
34. In what state is a silicon diode if the D. 20 V C. 1V
voltage drop across it is about 0.7 V? D. ∞
6. The output frequency of a full-wave
A. No bias
rectifier is ________ the input frequency.
B. Forward bias A. one-half 12. Determine the peak for both half
C. Reverse bias B. equal to cycles of the output waveform.
D. Zener region
C. twice
D. one-quarter
7. PIV is which of the following?
DIODE APPLICATIONS
A. peak input voltage
B. peak inverse voltage
1. Determine the total discharge time for
C. peak immediate voltage A. 16 V, –4 V
the capacitor in a clamper having C =
D. positive input voltage B. 16 V, 4 V
0.01µ F and R = 500 kΩ.
A. 5 ms 8. Determine the peak value of the C. –16 V, 4 V
B. 25 ms current through the load resistor. D. –16 V, –4 V
C. 2.5 ms 13. What is the peak inverse voltage
D. 50 ms across each diode in a voltage doubler?
2. Which element dictates the maximum A. Vm
level of source voltage? B. 2Vm
C. 0.5Vm
D. 0.25Vm
14. What is the VRRM (PIV rating) for the
A. 2.325 mA 1N4001 rectifier diode?
B. 5 mA A. 50 V
C. 1.25 mA B. 100 V
A. VZ C. 200 V
D. 0 mA
B. IZM D. 400 V
C. IZ 9. Determine the peak value of the E. none of the above
D. None of the above output waveform.
15. What type of diode circuit is used to
3. What type of diode circuit is used to add or restore a dc level to an electrical
clip off portions of signal voltages above signal?
or below certain levels? A. clipper or limiter
INDIABIX 1
B. clamper 20. What best describes the circuit? 25. If the ac supply is 50 Hz, what will be
C. IC voltage regulator the ripple frequency out of the full-wave
D. none of the above rectifier?
A. 50 Hz
16. Determine ID2.
B. 60 Hz
C. 100 Hz
D. 120 Hz
26. How many terminals do the 7800
series fixed positive voltage regulators
A. Full-wave rectifier have?
B. Half-wave rectifier A. 2
C. Clipper B. 3
A. 6.061 mA C. 4
D. Clamper
B. 0.7 mA D. 5
C. 3.393 mA 21. What is the PIV for each diode in a E. none of the above
D. 3.571 mA full-wave center-tapped rectifier? Note:
Vp(out) = peak output voltage. 27. An open circuit can have any voltage
17. What is the logic function of this across its terminals, but the current is
A. Vp(out) – 0.7 V
circuit? always ________.
B. Vp(out) + 0.7 V
C. 2Vp(out) – 0.7 V
D. 2Vp(out) + 0.7 V A. 5A
B. 0A
22. Determine ID2. C. 1A
D. ∞
28. Determine ID1.
A. 29.40 mA
A. Positive logic AND gate
B. 30.30 mA
B. Positive logic OR gate
C. 14.70 mA
C. Negative logic AND gate
D. Negative logic OR gate A. 0 mA
23. Determine the current level if E = 15 B. 29.40 mA
18. In a regulated supply, what term
V and R = 3 kΩ. C. 14.70 mA
describes how much change occurs in
D. 14.09 mA
the output voltage over a certain range
of load current values, from minimum to 29. Refer to the figure given below.
maximum current? Which diode arrangement will supply a
A. line regulation negative output voltage?
B. voltage regulator A. 0A
C. current regulator B. 4.76 mA
D. load regulation C. 5 mA
D. 5A
19. Determine the average value of the
current through the load resistor. 24. Determine V2.
A. a
B. b
C. c
A. 3.201 V D. d
A. 2.5 mA
B. 0 mA B. 0V 30. A silicon diode in a half-wave rectifier
C. 1.37 mA C. 4.3 V has a barrier potential of 0.7 V. This has
D. 1.479 mA D. 1.371 V the effect of
INDIABIX 1
A. reducing the peak output A. 9.3 V
voltage by 0.7 V. B. 10 V
B. increasing the peak output C. –10 V
voltage by 0.7 V. D. 0V
C. reducing the peak input voltage
A. 2 mA, 0 mA 41. The output frequency of a half-wave
by 0.7 V.
B. 4 mA, 2 mA rectifier is ________ the input frequency.
D. no effect.
C. 2 mA, 2 mA A. one-half
31. What best describes the circuit? D. 2 mA, 4 mA B. twice
C. equal to
36. In the operation of a half-wave D. none of the above
rectifier with a capacitor-input filter, the
ripple factor can be lowered by ________ 42. A diode is in the "________" state if
the value of the filter capacitor or the current established by the applied
________ the load resistors. sources is such that its direction matches
A. Full-wave rectifier that of the arrow in the diode symbol,
A. decreasing, decreasing
B. Half-wave rectifier and VD ≥ 0.7 V for Si and VD ≥ 0.3 V for
B. decreasing, increasing
C. Clipper Ge.
C. increasing, decreasing
D. Clamper A. off
D. increasing, increasing
32. Determine the value of the load B. on
37. Refer to the figure given below. The C. neutral
resistor.
probable trouble, if any, indicated by D. quiescent
these voltages is
43. Determine ID.
A. RL = 5 kΩ
B. RL = 5.5 kΩ
C. RL = 6 kΩ A. one of the diodes is open.
D. None of the above A. 0 mA
B. a diode is shorted.
B. 1.893 mA
33. Use the information provided here to C. an open transformer secondary.
C. 2.036 mA
determine the value of IDQ. D. the filter capacitor is shorted.
D. 2.143 mA
E. no trouble exists.
44. What best describes the circuit?
38. In a particular problem, which mode
has the highest level of IDQ?
A. Ideal
B. Approximate equivalent
C. Exact mode using characteristic
curve A. Full-wave rectifier
D. None of the above B. Half-wave rectifier
C. Clipper
39. Which diode(s) has (have) a zero D. Clamper
level current and voltage drop in the
A. 0 mA 45. In a voltage-multiplier circuit, the
ideal model?
B. 4.3 mA number of diodes is directly proportional
A. Si
C. 5 mA to the multiplicative voltage factor.
B. Ge
D. 10 mA A. True
C. Both Si and Ge
34. If the ac supply is 60 Hz, what will be D. Neither Si nor Ge B. False
the ripple frequency out of the half-wave 46. Rectifiers are commonly used in
40. Determine Vo if E1 = E2 = 10 V.
rectifier? battery chargers.
A. 30 Hz A. True
B. 50 Hz B. False
C. 60 Hz
D. 120 Hz 47. List the categories of clippers.
A. Series
35. Calculate IL and IZ. B. Parallel
C. Series and parallel
INDIABIX 1
48. A silicon diode has a voltage to 52. Refer to the figure given below. If the C. the transistor being driven into
ground of –117 V from the anode. The voltmeter across the transformer reads 0 cutoff.
voltage to ground from the cathode is – V, the probable trouble, if any, would be D. all of the above
117.7 V. The diode is
2. Which transistor bias circuit
A. open.
arrangement provides good stability
B. shorted.
using negative feedback from collector
C. forward-biased.
to base?
D. reverse-biased.
A. base bias
49. Which diode arrangement will supply A. one of the diodes is open. B. collector-feedback bias
a positive output voltage? B. a diode is shorted. C. voltage-divider bias
C. an open transformer D. emitter bias
secondary. 3. Refer to the given figure. The most
D. the filter capacitor is shorted. probable cause of trouble, if any, from
E. no trouble exists. these voltage measurements is
53. Determine the voltage across the
resistor.
A. a
B. b
A. 0V
C. c
B. 0.09 V
D. d
C. 0.2 V
50. What is the logic function of this D. 0.44 V
circuit?
54. With this Zener diode in its "on A. the base-emitter junction is
state," what is the level of IZ for the open.
maximum load resistance? B. RE is open.
C. a short from collector to
emitter.
D. no problems.
4. Refer to the given figure. The most
probable cause of trouble, if any, from
these voltage measurements is
A. 0 mA
A. Positive logic AND gate B. Undefined
B. Positive logic OR gate C. Equal to IRL
C. Negative logic AND gate D. IZM
D. Negative logic OR gate 55. In a voltage regulator network with
51. Determine the current through each fixed RL and R, what element dictates
diode if E1 = E2 = 0 V. the minimum level of source voltage?
A. VZ
B. IZ
C. IZM
A. the base-emitter junction is
open.
TRANSISTOR BIAS B. RE is open.
CIRCUITS C. a short from collector to
emitter.
A. 4.65 mA D. no problems.
1. Clipping is the result of
B. 9.3 mA
A. the input signal being too large. 5. What is the dc input resistance at the
C. 18.6 mA
B. the transistor being driven into base of a BJT?
D. 0.7 mA
saturation. A. βDCRC
B. βDC · (RC || RE )
INDIABIX 1
C. βDC·re′ 11. What is the Q-point for a fixed-bias A. saturated.
D. βDCRE transistor with IB = 75µ A, βDC = 100, VCC = B. cutoff.
20 V, and RC = 1.5 kΩ? C. nonconducting.
6. Which transistor bias circuit provides
A. VC = 0 V
good Q-point stability with a single- 16. Which transistor bias circuit
B. VC = 20 V
polarity supply voltage? arrangement has poor stability because
C. VC = 8.75 V
A. base bias its Q-point varies widely with βDC?
D. VC = 11.25 V
B. collector-feedback bias A. base bias
C. voltage-divider bias 12. Emitter bias requires B. collector-feedback bias
D. emitter bias A. only a positive supply voltage. C. voltage-divider bias
B. only a negative supply voltage. D. emitter bias
7. Refer to this figure. In the voltage-
C. no supply voltage.
divider biased npn transistor circuit, if R2 17. What is the most common bias
D. both positive and negative
opens, the transistor is circuit?
supply voltages.
A. base
13. Refer to this figure. The value of βDC B. collector
is C. emitter
D. voltage-divider
18. Refer to the given figure. The most
probable cause of trouble, if any, from
these voltage measurements would be
A. saturated.
B. cutoff.
C. nonconducting. A. 5.3.
B. 53.
8. Ideally, for linear operation, a
C. 94.
transistor should be biased so that the
D. 100.12.
Q-point is
A. near saturation. 14. Refer to this figure. Assume that
B. near cutoff. IC≈IE. Find VE.
C. where IC is maximum.
D. halfway between cutoff and
saturation. A. the base-emitter junction is
open.
9. The most stable biasing technique
B. RE is open.
used is the
C. a short from collector to
A. voltage-divider bias.
emitter.
B. base bias.
D. no problems.
C. emitter bias.
D. collector bias. 19. Refer to this figure. Determine IC.
A. 5V
10. Refer to this figure. The value of IB is
B. 10 V
C. 15 V
D. 2.5 V
15. Refer to this figure. In the voltage-
divider biased npn transistor circuit, if RC
opens, the transistor is
A. 5A
B. 5 mA
A. 53 µA.
C. 0 mA
B. 50 µA.
D. 10 mA
C. 50 mA.
D. 53 mA. 20. At saturation the value of VCE is
nearly ________, and IC = ________.
A. zero, zero
INDIABIX 1
B. VCC, IC(sat) B. cutoff.
C. zero, I(sat) C. nonconducting.
D. VCC, zero
29. Changes in βDC result in changes in
21. Voltage-divider bias has a relatively A. IC.
stable Q-point, as does B. VCE.
A. base bias. C. the Q-point.
B. collector-feedback bias. D. all of the above
C. both of the above
22. Refer to this figure. Assume IC≈IE.
DC BIASING BJTs
A. 10 µA.
Determine the value of RC that will allow B. 10 mA.
VCE to equal 10 V. 1. Calculate VCE.
C. 5 mA.
D. 50 mA.
26. Which transistor bias circuit
arrangement provides good Q-point
stability, but requires both positive and
negative supply voltages?
A. base bias
B. collector-feedback bias
C. voltage-divider bias
D. emitter bias
27. Refer to this figure. Calculate the A. –4.52 V
A. 1 kΩ current I2. B. 4.52 V
B. 1.5 kΩ C. –9 V
C. 2 kΩ D. 9V
D. 2.5 kΩ
2. For the BJT to operate in the active
23. The linear (active) operating region (linear) region, the base-emitter junction
of a transistor lies along the load line must be ________-biased and the base-
below ________ and above ________. collector junction must be ________-
A. cutoff, saturation biased.
B. saturation, cutoff A. forward, forward
B. forward, reverse
24. The input resistance of the base of a C. reverse, reverse
voltage-divider biased transistor can be D. reverse, forward
neglected A. 32 mA
A. at all times. B. 3.2 mA 3. The cutoff region is defined by IB
B. only if the base current is C. 168 µA ________ 0 A.
much smaller than the D. 320 µA A. >
current through R2 (the lower B. <
bias resistor). 28. Refer to this figure. In the voltage- C. ≤
C. at no time. divider biased npn transistor circuit, if R1 D. ≥
D. only if the base current is much opens, the transistor is
4. Determine the reading on the meter
larger than the current when VCC = 20 V, RC = 5 kΩ, and IC = 2
through R2 (the lower bias mA.
resistor).
25. Refer to this figure. The value of IC is
A. saturated.
INDIABIX 1
A. 10 V
B. –10 V
C. 0.7 V
D. 20 V
5. In a fixed-bias circuit, which one of the
stability factors overrides the other
factors?
A. S(ICO)
B. S(VBE) A. 20 A. True
C. S(β) B. 50 B. False
D. Undefined C. 75
6. Calculate the voltage across the 91 kΩ D. 116 14. In the case of this circuit, you must
resistor. assume that VE = 0.1·VCC in order to
10. Determine the change in IC from calculate RC and RE.
25ºC to 175ºC for the transistor defined
in this table for fixed-bias with RB = 240
kΩ and β= 100 due to the S(VBE) stability
factor.
A. 18 V
B. 9.22 V A. True
A. 145.8 µA
C. 3.23 V B. False
B. 145.8 nA
D. None of the above C. –145.8 µ A 15. For an "on" transistor, the voltage VBE
7. Calculate the value of VCEQ. D. –145.8 nA should be in the neighborhood of 0.7 V.
A. True
11. Which of the following is (are) related
B. False
to an emitter-follower configuration?
A. The input and output signals 16. In a voltage-divider circuit, which one
are in phase. of the stability factors has the least
B. The voltage gain is slightly less effect on the device at very high
than 1. temperature?
C. Output is drawn from the A. S(ICO)
emitter terminal. B. S(VBE)
D. All of the above C. S(β)
A. 8.78 V D. Undefined
12. At what region of operation is the
B. 0V base-emitter junction forward biased 17. Which of the following is (are) a
C. 7.86 V and the base-collector junction reverse stability factor?
D. 18 V biased? A. S(ICO)
A. Saturation B. S(VBE)
8. Calculate the approximate value of
B. Linear or active C. S(β)
the maximum power rating for the
C. Cutoff D. All of the above
transistor represented by the output
characteristics of Figure 4.1? 18. Calculate ICsat.
A. 250 mW 13. You can select the values for the
B. 170 mW emitter and collector resistors from the
C. 50 mW information that is provided for this
D. 0 mW circuit.
9. For what value of β does the transistor
enter the saturation region?
INDIABIX 1
23. Which of the following voltages must A. True
have a negative level (value) in any npn B. False
bias circuit?
29. Calculate Rsat if VCE = 0.3 V.
A. VBE
B. VCE
C. VBC
24. Determine the values of VCB and IB
for this circuit.
A. 35.29 mA
B. 5.45 mA A. 49.2 Ω
C. 1.86 mA B. 49.2 k Ω
D. 4.72 mA C. 49.2 m Ω
D. 49.2 M Ω
19. Calculate the storage time in a
A. 1.4 V, 59.7 µA
transistor switching network if toff is 56 30. The ratio of which two currents is
B. –1.4 V, 59.7 µA
ns, tf = 14 ns, and tr = 20 ns. represented by β?
C. –9.3 V, 3.58 µA
A. 70 ns A. IC and IE
D. 9.3 V, 3.58 µA
B. 42 ns B. IC and IB
C. 36 ns 25. Use this table to determine the C. IE and IB
D. 34 ns change in IC from 25ºC to 175ºC for RB / D. None of the above
RE = 250 due to the S(ICO) stability factor.
20. Determine ICQ at a temperature of 31. Which of the following is assumed in
Assume an emitter-bias configuration.
175º C if ICQ = 2 mA at 25º C for RB / RE = the approximate analysis of a voltage
20 due to the S(β) stability factor. divider circuit?
A. 2.417 mA A. IB is essentially zero amperes.
B. 2.392 mA B. R1 and R2 are considered to be
C. 2.25 mA series elements.
D. 2.58 mA C. RE ≥ 10R2
D. All of the above
21. Calculate ETh for this network.
A. 140.34 nA
B. 140.34 µA 32. The saturation region is defined by
C. 42.53 nA VCE ________ VCEsat.
D. 0.14034 nA A. >
B. <
26. For the typical transistor amplifier in C. ≤
the active region, VCE is usually about D. ≥
________ % to ________ % of VCC.
A. 10, 60 33. Calculate VCE.
B. 25, 75
C. 40, 90
27. For the BJT to operate in the
saturation region, the base-emitter
A. −12.12 V junction must be ________-biased and
B. 16.35 V the base-collector junction must be
C. −3.65 V ________-biased.
D. 10 V A. forward, forward
B. forward, reverse A. 4.52 V
22. Which of the following currents is B. –4.52 V
C. reverse, reverse
nearly equal to each other? C. 4.48 V
D. reverse, forward
A. IB and IC D. –4.48 V
B. IE and IC 28. The total time required for the
C. IB and IE transistor to switch from the "off" to the 34. Which of the following is (are) the
D. IB, IC, and IE "on" state is designated as ton and application(s) of a transistor?
defined as the delay time plus the time A. Amplification of signal
element. B. Switching and control
INDIABIX 1
C. Computer logic circuitry B. 8V
D. All of the above C. 6V
D. 2V
35. It is desirable to design a bias circuit
that is independent of the transistor 5. A self-biased n-channel JFET has a VD
beta. = 6 V. VGS = –3 V. Find the value of VDS.
A. True A. –3 V
B. False B. –6 V
C. 3V
D. 6V A. –6 V
FIELD EFFECT 6. Refer to the given figure. ID = 6 mA. B. 6V
C. 12 V
TRANSISTORS Calculate the value of VDS.
D. –3 V
1. For a JFET, the value of VDS at which ID 11. Refer to figure given below.
becomes essentially constant is the Determine the value of VGS.
A. pinch-off voltage.
B. cutoff voltage.
C. breakdown voltage.
D. ohmic voltage.
2. The ________ has a physical channel
between the drain and source. A. –9 V
A. D-MOSFET B. 9V
B. E-MOSFET C. 6V
C. V-MOSFET D. –3 V A. –20 V
B. –8 V
3. Refer to figure given below. Calculate C. –6 V
the value of VDS. D. –2 V
7. What type(s) of gate-to-source
voltage(s) can a depletion MOSFET (D- 12. Which of the following devices has
MOSFET) operate with? the highest input resistance?
A. zero A. diode
B. positive B. JFET
C. negative C. MOSFET
D. any of the above D. bipolar junction transistor
8. Midpoint bias for a D-MOSFET is ID = 13. The value of VGS that makes ID
________, obtained by setting VGS = 0. approximately zero is the
A. IDSS / 2 A. pinch-off voltage.
B. IDSS / 3.4 B. cutoff voltage.
A. 0V C. IDSS C. breakdown voltage.
B. 2V D. ohmic voltage.
9. On the drain characteristic curve of a
C. 4V 14. The JFET is always operated with the
JFET for VGS = 0, the pinch-off voltage is
D. –2 V gate-source pn junction ________ -
A. below the ohmic area.
4. Refer to figure shown below. B. between the ohmic area and biased.
Determine the value of VS. the constant current area. A. forward
C. between the constant current B. reverse
area and the breakdown 15. Identify the p-channel D-MOSFET.
region.
D. above the breakdown region.
10. Refer to the given figure. ID = 6 mA.
Calculate the value of VDS.
A. a
B. b
C. c
D. d
A. 20 V
INDIABIX 1
16. All MOSFETs are subject to damage 23. High input resistance for a JFET is 29. Identify the n-channel E-MOSFET.
from electrostatic discharge (ESD). due to
A. true A. a metal oxide layer.
B. false B. a large input resistor to the
device.
17. Identify the n-channel D-MOSFET.
C. an intrinsic layer.
D. the gate-source junction being A. a
reverse-biased.
B. b
24. For a JFET, the change in drain C. c
current for a given change in gate-to- D. d
A. a source voltage, with the drain-to-source
30. If VD is less than expected (normal)
B. b voltage constant, is for a self-biased JFET circuit, then it
C. c A. breakdown. could be caused by a(n)
D. d B. reverse transconductance.
A. open RG.
C. forward transconductance.
18. A dual-gated MOSFET is B. open gate lead.
D. self-biasing. C. FET internally open at gate.
A. a depletion MOSFET.
B. an enhancement MOSFET. 25. Identify the p-channel E-MOSFET. D. all of the above
C. a VMOSFET. 31. Refer to the given figure. ID = 6 mA.
D. either a depletion or an Calculate the value of VDS.
enhancement MOSFET.
19. Refer to figure show below. Calculate
the value of VD.
A. a
B. b
C. c
D. d
26. Refer to figure shown below. What is
the value of IG? A. 13.2 V
B. 10 V
C. 6.8 V
A. 20 V D. 0V
B. 8V
C. 6V
D. 2V DC BIASING FETs
20. What three areas are the drain
characteristics of a JFET (VGS = 0) divided 1. Calculate the value of VDS.
into? A. 6 mA
A. ohmic, constant-current, B. 4 mA
breakdown C. 2 mA
B. pinch-off, constant-current, D. 0 mA
avalanche
27. A JFET data sheet specifies VGS(off) = –
C. ohmic, constant-voltage,
6 V and IDSS = 8 mA. Find the value of ID
breakdown
when VGS = –3 V.
21. In a self-biased JFET circuit, if VD = A. 2 mA
VDD then ID = ________. B. 4 mA A. 0V
A. 0 C. 8 mA B. 0.35 V
B. cannot be determined from D. none of the above C. 3.8 V
information above D. 33.5 V
28. A JFET data sheet specifies VGS(off) = –
22. The resistance of a JFET biased in the 10 V and IDSS = 8 mA. Find the value of ID 2. Calculate the value of VDS.
ohmic region is controlled by when VGS = –3 V.
A. VD. A. 2 mA
B. VGS. B. 1.4 mA
C. VS. C. 4.8 mA
D. VDS. D. 3.92 mA
INDIABIX 1
11. On the universal JFET bias curve, the
vertical scale labeled ________ can, in
itself, be used to find the solution to
________ configurations.
A. m, fixed-bias
B. M, fixed-bias
C. M, voltage-bias
D. m, voltage-bias
A. 0V
B. 8V 12. Calculate the value of RS. Assume
C. 4.75 V VGSQ = −2V.
D. 16 V
A. 10 MΩ
3. Given the values of VDQ and IDQ for this B. 100 MΩ
circuit, determine the required values of C. 110 MΩ
RD and RS. D. 220 MΩ
7. Which of the following is (are) true of a
self-bias configuration compared to a
fixed-bias configuration?
A. One of the dc supplies is A. 0 kΩ
eliminated. B. 1.68 kΩ
B. A resistor RS is added. C. 6.81 kΩ
C. VGS is a function of the output D. 8.5 kΩ
current ID.
D. All of the above 13. Calculate the value of RD.
A. 2 kΩ, 2 kΩ 8. The input controlling variable for a(n)
B. 1 kΩ, 5.3 kΩ ________ is a current level and a voltage
C. 3.2 kΩ, 400 Ω level for a(n) ________.
D. 2.5 kΩ, 5.3 kΩ A. BJT, FET
4. For what value of RD is the voltage B. FET, BJT
across VDS zero? C. FET, FET
D. BJT, BJT
9. Through proper design, a ________ A. 2 kΩ

can be introduced that will affect the B. 3 kΩ
biasing level of a voltage-controlled C. 3.5 kΩ
JFET resistor. D. 4.13 kΩ
A. photodiode
14. At what value of RS does the circuit
B. thermistor
switch from depletion mode to
C. laser diode
enhancement mode?
A. 2.400 kΩ D. Zener diode
B. 5.167 kΩ
C. 6.167 kΩ 10. For what value of RS can the
D. 6.670 kΩ depletion-type MOSFETs operate in
enhancement mode?
5. For the FET, the relationship between
the input and output quantities is
________ due to the ________ term in
Shockley's equation.
A. nonlinear, cubed
B. linear, proportional
C. nonlinear, squared
6. For what value of R2 is VGSQ equal to 1
A. 2.4 kΩ
V?
B. 5 kΩ A. 250 Ω
C. 6.2 kΩ B. 500 Ω
D. None of the above C. 10 M Ω
INDIABIX 1
D. Both are obtained by writing
15. Which of the following current
Kirchhoff's voltage law (KVL)
equations is true?
at the input side loop
A. IG = ID
B. IG = IS 21. Calculate VDS.
C. ID = IS
D. IG = ID = IS
16. Calculate VDSQ.
A. 0V
B. 20 V
C. 30 V
D. 40 V
26. What is the approximate current
level in the gate of an FET in dc analysis?
A. 0A
A. 0V
B. 0.7 mA
A. 1.0 V B. 6V
C. 0.3 mA
B. 1.50 V C. 16 V
D. Undefined
C. 2.56 V D. 11 V
D. 3.58 V 27. Calculate VD.
22. For the noninverting amplifier, one
17. Calculate the value of VDS. of the most important advantages
associated with using a JFET for control
is the fact that it is ________ rather than
________ control.
A. dc, ac
B. ac, dc
23. What are the voltages across RD and
RS?
A. 23.0 V
B. 17.0 V
A. –3 V C. 4.6 V
B. 3V D. 12.4 V
C. –4 V 28. Calculate VCE.
D. 4V
18. Which of the following represents
the voltage level of VGS in a self-bias
configuration?
A. VG
B. VGS(off)
C. VS
D. VP A. 0 V, 0 V
B. 5 V, 5 V
19. The self-bias configuration
C. 10 V, 10 V A. 0V
eliminates the need for two dc supplies.
D. 20 V, 20 V B. 2V
A. True
B. False 24. Depletion-type MOSFETs do not C. 3V
permit operating points with positive D. 5.34 V
20. Which of the following is a false
values of VGS and levels of ID that exceed 29. Seldom are current levels measured
statement regarding the dc load line
IDSS. since such maneuvers require disturbing
when comparing self-bias and voltage-
A. True the network structure to insert the
divider configurations?
B. False meter.
A. Both are linear lines.
B. Both cross the origin. 25. Calculate the value of VDSQ. A. True
C. Both intersect the transfer B. False
characteristics.
INDIABIX 1
30. In the design of linear amplifiers, it is
good design practice to choose
operating points that do not crowd the
saturation level or cutoff regions.
A. True
B. False
31. What is the new value of RD when
there is 7 V across VDS?
A. 1.2 mA, –1.8 V

B. 1.5 mA, –1.5 V
C. 2.0 mA, –1.2 V
D. 3.0 mA, –0.8 V
A. 3 kΩ
B. 3.3 kΩ
C. 4 kΩ
D. 5 kΩ
32. Which of the following describe(s)
the difference(s) between JFETs and
depletion-type MOSFETs?
A. VGS can be positive or negative
for the depletion- type.
B. ID can exceed IDSS for the
depletion-type.
C. The depletion-type can operate
in the enhancement
mode.
D. All of the above
33. Determine the value of VDSQ.
A. 3.5 V
B. 4.86 V
C. 7.14 V
D. 10 V
34. Specification sheets typically provide
the value of the constant k for
enhancement-type MOSFETs.
A. True
B. False
35. Determine the quiescent values of ID
and VGS.

Indiabix I

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Indiabix I

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PART 1

SPECIAL PURPOSE DIODES

BIPOLAR JUNCTION TRANSISTORS

BJT AND FET FREQUENCY RESPONSE

BASIC OP AMP CIRCUITS

TRANSISTOR BIAS CIRCUITS

FIELD EFFECT TRANSISTORS

A. remain the same, increase

A. 25 Vdc, –200 nAdc

15. Referring to this figure, calculate the

9. Through proper design, a ________ A. 2 kΩ

A. 1.2 mA, –1.8 V

33. Determine the value of VDSQ.

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