Top 100 Electronic Devices and Circuits Interview Questions

10/19/2017 100 TOP ELECTRONIC DEVICES and CIRCUITS Questions and Answers pdf ELECTRONIC DEVICES and CIRCUITS
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1. At room temperature the current in an intrinsic
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7. Assertion (A): A p-n junction has high resistance in reverse Choice Questions and
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A. Both A and R are true and R is correct explanation of A
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C. increase in I/P impedance and decrease in O/P impedance Answers
D. decrease in I/P impedance and increase in O/P impedance
Answer: C
9. How many free electrons does a p type semiconductor has?
A. only those produced by thermal energy

B. only those produced by doping
C. those produced by doping as well as thermal energy
D. any of the above
Answer: A
10. Which of the following has highest resistivity?
A. Mica
B. Paraffin wax
C. Air
D. Mineral oil
Answer: C
11. Assertion (A): In p-n-p transistor collector current is termed

negative.
Reason (R): In p-n-p transistor holes are majority carriers.

B. Both A and R are true but R is not a correct explanation of A
C. A is true but R is false
D. A is false but R is true
Answer: B
12. The sensitivity of human eyes is maximum at
A. white portion of spectrum

B. green portion of spectrum
C. red portion of spectrum
D. violet portion of spectrum
Answer: B
13. In a bipolar transistor, the base collector junction has
A. forward bias
B. reverse bias
C. zero bias
D. zero or forward bias
Answer: B
14. An intrinsic silicon sample has 1 million free electrons at

room temperature. As the temperature is increased
A. the number of free electrons increases

B. the number of free electrons increases but the number of
holes decreases
C. the number of free electrons and holes increase by the same
amount
D. the number of free electrons and holes increase but not by
the same amount
Answer: C
15. What is the necessary a.c. input power from the transformer
secondary used in a half wave rectifier to deliver 500 W of d.c.
power to the load?
A. 1232 W
B. 848 W
C. 616 W
D. 308 W
Answer: A
16. In a semi-conductor diode, the barrier offers opposition to
A. holes in P-region only

B. free electrons in N-region only
C. majority carriers in both regions
D. majority as well as minority carriers in both regions
Answer: C
17. In a half wave rectifier, the load current flows
A. only for the positive half cycle of the input signal

B. only for the negative half cycle of the input signal
C. for full cycle
D. for less than fourth cycle
Answer: A
18. For a NPN bipolar transistor, what is the main stream of

current in the base region?
A. Drift of holes
B. Diffusion of holes
C. Drift of electrons
D. Diffusion of electrons
Answer: B
19. Assertion (A): A VMOS can handle much larger current than
other field effect transistors.
Reason (R): In a VMOS the conducting channel is very narrow.

Answer: C
20. In monolithic ICs, all the components are fabricated by
A. diffusion process
B. oxidation
C. evaporation
D. none
Answer: A
21. Which one of the following is not a characteristic of a

ferroelectric material?
A. High dielectric constant

B. No hysteresis
C. Ferroelectric characteristic only above the curie point

D. Electric dipole moment
Answer: C
22. In the sale of diamonds the unit of weight is carat. One carat
is equal to
A. 100 mg
B. 150 mg
C. 200 mg
D. 500 mg
Answer: C
23. Assertion (A): A JFET can be used as a current source.
Reason (R): In beyond pinch off region the current in JFET is

nearly constant.

Answer: A
24. Permalloy is
A. a variety of stainless steel

B. a polymer
C. a conon-ferrous alloy used in aircraft industry
D. a nickel an iron alloy having high permeability
Answer: D
25. Which of the following could be the maximum current rating

of junction diode by 126?
A. 1 A
B. 10 A
C. 20 A
D. 100 A
Answer: A
ELECTRONIC DEVICES and CIRCUITS Questions and

Answers ::
26. Each cell of a static Random Access memory contains
A. 6 MOS transistor
B. 4 MOS transistor, 2 capacitor
C. 2 MOS transistor, 4 capacitor
D. 1 MOS transistor and 1 capacitor
Answer: A
27. An electron in the conduction band
A. has higher energy than the electron in the valence band

B. has lower energy than the electron in the valence band
C. loses its charge easily
D. jumps to the top of the crystal
Answer: A
28. The dynamic resistance of a forward biased p-n diode
A. varies inversely with current

B. varies directly with current
C. is constant
D. is either constant or varies directly with current
Answer: A
29. A thermistor is a
A. thermocouple
B. thermometer
C. miniature resistance
D. heat sensitive explosive
Answer: C
30. When diodes are connected in series to increase voltage

rating the peak inverse voltage per junction
A. should not exceed half the breakdown voltage

B. should not exceed the breakdown voltage
C. should not exceed one third the breakdown voltage
D. may be equal to or less than breakdown voltage
Answer: C
31. Hall effect is observed in a specimen when it is carrying

current and is placed in a magnetic field. The resultant electric
field inside the specimen is
A. normal to both current and magnetic field

B. in the direction of current
C. antiparallel to magnetic field
D. in arbitrary direction
Answer: A
32. In an ideal diode there is no breakdown, no __________

current, and no forward __________ drop.
A. reverse, voltage
B. forward, current
C. forward, voltage
D. reverse, current
Answer: A
33. Silicon is not suitable for fabrication of light emitting diodes

because it is
A. an indirect band gap semiconductor

B. direct band gap semiconductor
C. wideband gap semiconductor
D. narrowband gap semiconductor
Answer: A
34. MOSFET can be used as a
A. current controlled capacitor

B. voltage controlled capacitor
C. current controlled inductor
D. voltage controlled inductor
Answer: B
35. Power diodes are generally
A. silicon diodes
B. germanium diodes
C. either of the above
Answer: A
36. The depletion layer width of Junction
A. decreases with light doping

B. is independent of applied voltage
C. is increased under reverse bias
D. increases with heavy doping
Answer: C
37. Forbidden energy gap in germanium at 0 K is about
A. 10 eV
B. 5 eV
C. 2 eV
D. 0.78 eV
Answer: D
38. Light dependent resistors are
A. highly doped semiconductor

B. intrinsic semiconductor
C. lightly doped semiconductor
D. either (a) or (c)
Answer: C
39. Fermi level is the amount of energy in which
A. a hole can have at room temperature

B. an electron can have at room temperature
C. must be given to an electron move to conduction band
Answer: C
40. When avalanche breakdown occurs covalent bonds are not

affected.
A. True
B. False
Answer: B
41. An ideal Op-amp is an ideal
A. voltage controlled current source

B. voltage controlled voltage source
C. current controlled current source
D. current controlled voltage source
Answer: B
42. Free electrons exist in
A. first band
B. second band
C. third band
D. conduction band
Answer: D
43. As compared to bipolar junction transistor, a FET
A. is less noisy
B. has better thermal stability
C. has higher input resistance
D. all of the above
Answer: D
44. For a P-N diode, the number of minority carriers crossing

the junction depends on
A. forward bias voltage

B. potential barrier
C. rate of thermal generation of electron hole pairs
Answer: C
45. Which variety of copper has the best conductivity?
A. Pure annealed copper

B. Hard drawn copper
C. Induction hardened copper
D. Copper containing traces of silicon
Answer: A
46. The output, V-I characteristics of an Enhancement type

MOSFET has
A. only an ohmic region

B. only a saturation region
C. an ohmic region at low voltage value followed by a saturation
region at higher voltages
D. an ohmic region at large voltage values preceded by a
saturation region at lower voltages
Answer: C
47. Piezoelectric quartz crystal resonators find application

where
A. signal amplification is required

B. rectification of the signal is required
C. signal frequency control is required
D. modulation of signal is required
Answer: B
48. The forbidden energy gap between the valence band and
conduction band will be least in case of
A. metals
B. semiconductors
C. insulators
D. all of the above
Answer: A
49. If too large current passes through the diode
A. all electrons will leave

B. all holes will freeze
C. excessive heat may damage the diode
D. diode will emit light
Answer: C
50. In a bipolar transistor, the emitter base junction has
A. forward bias
B. reverse bias
C. zero bias
D. zero or reverse bias
Answer: A
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AUGUST 29, 2017 AT 4:00 PM
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10/19/2017 100 TOP ELECTRONIC DEVICES and CIRCUITS Questions and Answers pdf ELECTRONIC DEVICES and CIRCUITS

Engineering interview questions,Mcqs,Objective Questions,Class Notes,Seminor

Home » ELECTRONIC DEVICES and CIRCUITS Questions »

DEVICES and CIRCUITS princetel.com

Questions and Answers pdf Buy IC In Stock

1 Download Free PDF 2 RF

Answer: B PDF DataSheet PDF

4. In which of these is reverse recovery time nearly zero? Engineering Questions

5. A transistor has a current gain of 0.99 in the CB mode. Its

C. 1.01 647 followers

Answer: A Recent Comments

Mohamed fathy on Steam

A. frequency of incident radiation Online Test – Multiple

8. Voltage series feedback (Also called series-shunt feedback) Manindra on 60 TOP

9. How many free electrons does a p type semiconductor has?

A. only those produced by thermal energy

10. Which of the following has highest resistivity?

11. Assertion (A): In p-n-p transistor collector current is termed

Reason (R): In p-n-p transistor holes are majority carriers.

A. Both A and R are true and R is correct explanation of A

12. The sensitivity of human eyes is maximum at

A. white portion of spectrum

13. In a bipolar transistor, the base collector junction has

14. An intrinsic silicon sample has 1 million free electrons at

A. the number of free electrons increases

16. In a semi-conductor diode, the barrier offers opposition to

A. holes in P-region only

17. In a half wave rectifier, the load current flows

A. only for the positive half cycle of the input signal

18. For a NPN bipolar transistor, what is the main stream of

Reason (R): In a VMOS the conducting channel is very narrow.

A. Both A and R are true and R is correct explanation of A

20. In monolithic ICs, all the components are fabricated by

21. Which one of the following is not a characteristic of a

A. High dielectric constant

C. Ferroelectric characteristic only above the curie point

23. Assertion (A): A JFET can be used as a current source.

Reason (R): In beyond pinch off region the current in JFET is

A. Both A and R are true and R is correct explanation of A

A. a variety of stainless steel

25. Which of the following could be the maximum current rating

ELECTRONIC DEVICES and CIRCUITS Questions and

27. An electron in the conduction band

A. has higher energy than the electron in the valence band

28. The dynamic resistance of a forward biased p-n diode

A. varies inversely with current

30. When diodes are connected in series to increase voltage

A. should not exceed half the breakdown voltage

31. Hall effect is observed in a specimen when it is carrying

A. normal to both current and magnetic field

32. In an ideal diode there is no breakdown, no __________

33. Silicon is not suitable for fabrication of light emitting diodes

A. an indirect band gap semiconductor

34. MOSFET can be used as a

A. current controlled capacitor

35. Power diodes are generally

36. The depletion layer width of Junction

A. decreases with light doping

37. Forbidden energy gap in germanium at 0 K is about

38. Light dependent resistors are

A. highly doped semiconductor

39. Fermi level is the amount of energy in which