Experiment No.

02:
Title: Determination of the characteristic curve of a Diode.
Objective:
The volt–ampere characteristics of a diode give the variation of diode current with the
voltage. This characteristic curve is essential to understand the behavior of a diode when it is
connected to circuit.

Theory:
It is the simplest of semiconductor devices but plays a very vital role in electronic
systems, having characteristics that closely match those of a simple switch. The ideal diode is a
two-terminal device formed from a junction of n-type and p-type semiconductor material. The
lead connected to the p-type material is called the anode and the lead connected to the n-type
material is the cathode. In general, the cathode of a diode is marked by a solid line on the diode.
It has low (ideally zero) resistance to the flow of current in one direction, and high (ideally
infinite) resistance in the other direction.

A diode is made of a crystal of semiconductor, usually silicon, but germanium and

gallium arsenide are also used. Impurities are added to it to create a region on one side that
contains negative charge carriers (electrons), called an n-type semiconductor, and a region on the
other side that contains positive charge carriers (holes), called a p-type semiconductor. P-type of
semiconducting material is made by defusing impurity of trivalent type of material in the pure
form of semiconductor as shown below in Figure 2(b). N-type semiconducting material is made
by defusing impurity of pentavalent type of material in the pure form of semiconductor as shown
below in Figure 2(c).

(a) (b) (c)

Figure-2: (a) Covalent bonding Silicon atom; (b) P-type semiconductor (Boron as trivalent
impurity); (c) N-type semiconductor (Antimony used as pentavalent impurity).

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 When the n-type and p-type materials are attached together, a momentary flow of
electrons occur from the n to the p side resulting in a third region between the two where no
charge carriers are present. This region is called the depletion region because there are no charge
carriers (neither electrons nor holes) in it.

The diode's terminals are attached to the n-regions and p-regions. The boundary between
these two regions, called a p–n junction, is where the action of the diode takes place.
When the diode is forward biased, due to the negative terminal on the n-side, electrons from the
n-side are pushed towards the p-region. Similarly, due to positive voltage on the p-side of the
diode, Holes from the p-region are pushed towards n-side. Due to this the electrons will start
converting the positive ions in the p-region into neutral atoms and holes will start converting the
negative ions in the n-region to neutral atoms. Hence width of the depletion region starts
reducing due to reduction in the barrier potential. This keeps happening and at a certain point the
depletion region collapses and there is no opposition to the flow of current. Hence large number
of electrons and holes will cross the junction and make the current to flow from anode to
cathode. Hence, forward biased electrical resistance of diode is very small and hence there is a
small voltage drop (Practical condition, ideally there should be 0 forward resistance) across it. Its
value for silicon diode is about 0.7 V. Thus the p-n junction diode will allow a current to pass
through it only when it is forward biased.

When the diode is reversed biased the hole from the p-side will get attracted towards the
negative terminal of the supply and electrons from the n-side are attracted towards the positive
terminal. Hence the process of widening of the depletion region takes place and hence more and
more opposition to the flow of current takes place. Hence, ideally the reverse biased resistance of
the diode is infinite and no current flows from the diode when it is reversed biased. Due to large
reverse biased voltage, suddenly large current will flow through the reverse biased voltage. Due
to this large power gets dissipated in the diode which may damage it permanently. In zero bias
condition no voltage is applied and no current flows through the diode. So the diode remains in
the cut-off region. Operation of diode can be summarized in form of I-V diode characteristics
graph.

Figure 3: Forward and Reverse Bias Condition of Diode.

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 Figure-4: I-V characteristics curve of Diode.

Equipment List:
1. Diode
2. Resistance 10 k
3. Pot 100 k
4. Project board
5. DC power supply
6. Multi-meter.

Circuit Diagram:

Figure: Circuit Diagram of the experiment

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Experimental Procedure:
1. Measure the actual value of the 1K resistor.
2. Connect the components except the power supply as shown in the figure.
3. Connect the power supply in the circuit and turn it on.
4. Vary the supply voltage in a 0.5V step and measure the voltage across the Diode VD and
the voltage across the resistor and record the result in the table.
5. Calculate Id and fill up the table below [take 5 to 6 data].
6. Plot the VD vs Id characteristic curve for the diode.
7. Determine the “Threshold voltage”

Report Writing:
1. Plot the VD - ID characteristic curve for the diode and comment on the result.
2. What will happen if the supply voltage polarity is reversed for the case of using a diode
with 4.8V?
3. What is Semiconductor material? Write about the two types of semiconductor materials
that have been instructed in the class.

Discussion:
a) What has been taught in this experiment?
b) Discuss the causes of error.

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