2SK2648-01 FUJI POWER MOSFET

N-CHANNEL SILICON POWER MOSFET

FAP-2S Series Outline Drawings
TO-3P

Features
High speed switching
Low on-resistance
No secondary breadown
Low driving power
Avalanche-proof

Applications
Switching regulators
UPS (Uninterruptible Power Supply)
DC-DC converters

Maximum ratings and characteristicAbsolute maximum ratings

Equivalent circuit schematic
(Tc=25°C unless otherwise specified)
Item Symbol Ratings Unit
Drain(D)
Drain-source voltage V DS 800 V
Continuous drain current ID ±9 A
Pulsed drain current ID(puls] ±36 A
Gate-source voltage VGS ±35 V
Repetitive or non-repetitive IAR *2 9 A Gate(G)
Maximum Avalanche Energy EAS *1 241 mJ Source(S)
Max. power dissipation PD 150 W
Operating and storage Tch +150 °C
temperature range Tstg -55 to +150 °C
*1 L=5.46mH, Vcc=80V <
*2 Tch=150°C

Electrical characteristics (Tc =25°C unless otherwise specified)

Item Symbol Test Conditions Min. Typ. Max. Units
Drain-source breakdown voltaget V(BR)DSS ID=1mA VGS=0V 800 V
Gate threshold voltage VGS(th) ID=1mA VDS=VGS 3.5 4.0 4.5 V
VDS=800V Tch=25°C 10 500 µA
Zero gate voltage drain current IDSS
VGS=0V Tch=125°C 0.2 1.0 mA
Gate-source leakage current IGSS VGS=±35V VDS=0V 10 100 nA
Drain-source on-state resistance RDS(on) ID=4.5A VGS=10V 1.28 1.50 Ω
Forward transcondutance gfs ID=4.5A VDS=25V 3.0 6.0 S
Input capacitance Ciss VDS =25V 1200 1800 pF
Output capacitance Coss VGS=0V 180 270
Reverse transfer capacitance Crss f=1MHz 90 140
Turn-on time ton td(on) VCC=600V ID=9A 30 50 ns
tr VGS=10V 110 170
Turn-off time toff td(off) RGS=10 Ω 100 150
tf 65 100
Avalanche capability IAV L=100 µH Tch=25°C 9 A
Diode forward on-voltage V SD IF=2xIDR VGS=0V Tch=25°C 1.0 1.5 V
Reverse recovery time t rr IF=IDR VGS=0V 950 ns
Reverse recovery charge Qrr -di/dt=100A/µs Tch=25°C 12 µC

Thermalcharacteristics
Item Symbol Test Conditions Min. Typ. Max. Units
Rth(ch-c) channel to case 0.83 °C/W
Thermal resistance
Rth(ch-a) channel to ambient 35.0 °C/W

1
2SK2648-01 FUJI POWER MOSFET
Characteristics

Power Dissipation Safe operating area

PD=f(Tc) ID=f(VDS):D=0.01,Tc=25°C
200 10
2

150 t=0.01 µ s
1µs
1
10
DC 10 µ s
PD [W]

ID [A]
100
100 µ s

0
10 1ms
50 t
t
D=
T
10ms
T
100ms
-1
0 10
0 50 100 150 10
0
10
1
10
2
10
3

o
Tc [ C] VDS [V]

Typical output characteristics Typical transfer characteristic

ID=f(VDS):80µs Pulse test,Tch=25°C ID=f(VGS):80µs Pulse test,VDS=25V,Tch=25°C
20

VGS=20V
1
10V 10
15 8V
ID [A]

0
10
ID [A]

10

7V

-1
5 6.5V 10

6V

5.5V
0 5V 10
-2

0 5 10 15 20 25 30 35 0 1 2 3 4 5 6 7 8 9 10

VDS [V] VGS [V]

Typical forward transconductance Typical drain-source on-state resistance

gfs=f(ID):80µs Pulse test,VDS=25V,Tch=25°C RDS(on)=f(ID):80µs Pulse test, Tch=25°C
15

VGS=
5V 5.5V 6V 6.5V 7V

1
10
10
RDS(on) [ Ω ]
gfs [s]

0
10
5

8V 10V
20V

-1 0
10 -1 0 1
10 10 10 0 5 10 15 20
ID [A] ID [A]

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2SK2648-01 FUJI POWER MOSFET

Drain-source on-state resistance Gate threshold voltage

RDS(on)=f(Tch):ID=4.5A,VGS=10V VGS(th)=f(Tch):ID=1mA,VDS=VGS
6.0

5.0
4
max.
4.0
typ.

VGS(th) [V]
RDS(on) [ Ω ]

min.
3.0
max.

2
typ. 2.0

1.0

0 0.0
-50 0 50 100 150
-50 0 50 100 150 o
Tch [ C]
o
Tch [ C]

Typical gate charge characteristic Typical capacitances

VGS=f(Qg):ID=9A,Tch=25°C C=f(VDS):VGS=0V,f=1MHz
40 10n
800

700 0V 35
Vcc=640V 16
cc= V
V 400
600 0V 30
64 Ciss
1n
500 25
VDS [V]

VGS [V]

C [F]

400V
400 20

Coss
300 15
100p
Crss
200 160V 10

100 5

0 0 10p -2 -1 0 1 2
0 20 40 60 80 100 120 140 160 180 10 10 10 10 10
Qg [nC] VDS [V]

Forward characteristic of reverse of diode

IF=f(VSD):80µs Pulse test,VGS=0V

1
10
o
Tch=25 C typ.

0
IF [A]

10

-1
10

-2
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

VSD [V]

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2SK2648-01 FUJI POWER MOSFET

Transient thermal impedande

1
Zthch=f(t) parameter:D=t/T
10

0
10
Zthch-c [K/W]

D=0.5

0.2

-1 0.1
10
0.05 t
t
D=
0.02 T
T
0.01
0
-2
10
-5 -4 -3 -2 -1 0 1
10 10 10 10 10 10 10

t [s]